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    S2A MOSFET Search Results

    S2A MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    S2A MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RFD14N05 spice

    Abstract: HUF76343 HRF3205 equivalent HUF75623P3 MOSFET S1A HRF3205 HUF76645P3 RF1K49093 RFP70N06 HRF3205S
    Text: Power MOSFET SPICE and Thermal Models Power MOSFET Products Features • • • • Sub Circuit Approach Full Operating Temperature Range Accurate Gate Charge Modeling BVDSS Modeling at Low and High Currents • • • Package Inductances Gate Source Resistance


    Original     		PDF HRF3205 HRF3205S HRFZ44N HUF75229P3 HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S RFD14N05 spice HUF76343 HRF3205 equivalent HUF75623P3 MOSFET S1A HRF3205 HUF76645P3 RF1K49093 RFP70N06 HRF3205S

    IRF540N

    Abstract: MOSFET IRF540n huf76639p3 HRF3205 equivalent HUF75623P3 ITF87056DQT huf75339 RF1K49093 HRF3205 HRFZ44N
    Text: Power MOSFET SPICE and Thermal Models TM Features • • • • • • • Sub Circuit Approach Full Operating Temperature Range Accurate Gate Charge Modeling BVDSS Modeling at Low and High Currents Package Inductances Gate Source Resistance Third Quadrant Diode Operation


    Original     		PDF HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 IRF540N MOSFET IRF540n huf76639p3 HRF3205 equivalent HUF75623P3 ITF87056DQT huf75339 RF1K49093 HRF3205 HRFZ44N

    toshiba smd marking

    Abstract: SA MARKING SMD mos DONG YANG MOTOR kec smd marking smd marking S3A lg ultra slim tpc6004 TPC6001 TPC6002 TPC6005
    Text: Power MOSFETs VS-6 Series PRODUCT GUIDE The four key features of the VS 4-1 Package 1 Ultra-thin package “ “ Toshiba have developed a new 6-pin SMD package for power MOSFETs known as the VS-6 . This package allows these devices to be used in compact, thin, lightweight, high-efficiency


    Original     		PDF

    IRF530

    Abstract: IRF530T IRF530 fairchild 929e1 980E3 IRF530 mosfet ON semiconductor N51 IRF530 application
    Text: IRF530 Data Sheet January 2002 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET Features Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE • Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER


    Original     		PDF IRF530 O-220AB IRF530 IRF530T IRF530 fairchild 929e1 980E3 IRF530 mosfet ON semiconductor N51 IRF530 application

    75332p

    Abstract: 75332S 75332 HUF75332P3 75332G huf75332 HUF75332G3 HUF75332S3S HUF75332S3ST TB334
    Text: HUF75332G3, HUF75332P3, HUF75332S3S Data Sheet June 1999 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75332G3, HUF75332P3, HUF75332S3S 75332p 75332S 75332 HUF75332P3 75332G huf75332 HUF75332G3 HUF75332S3S HUF75332S3ST TB334

    KP-69

    Abstract: mosfet 30V 18A TO 252 FDD24AN06LA0
    Text: FDD24AN06LA0_F085 N-Channel Logic Level PowerTrench MOSFET 60V, 36A, 24mΩ Features Applications • r DS ON = 20mΩ (Typ.), VGS = 5V, ID = 36A • Motor / Body Load Control • Qg(tot) = 16nC (Typ.), VGS = 5V • ABS Systems • Low Miller Charge • Powertrain Management


    Original     		PDF FDD24AN06LA0 O-252AA KP-69 mosfet 30V 18A TO 252

    75307D

    Abstract: 75307 transistor 75307D TA75307 AN9321 HUF75307D3 HUF75307D3S HUF75307D3ST HUF75307P3 TB334
    Text: HUF75307P3, HUF75307D3, HUF75307D3S Data Sheet June 1999 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75307P3, HUF75307D3, HUF75307D3S 43cts 75307D 75307 transistor 75307D TA75307 AN9321 HUF75307D3 HUF75307D3S HUF75307D3ST HUF75307P3 TB334

    75542P

    Abstract: AN9321 HUF75542P3 HUF75542S3S HUF75542S3ST TB334
    Text: HUF75542P3, HUF75542S3S Data Sheet December 2001 75A, 80V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE Features • Ultra Low On-Resistance - rDS ON = 0.014Ω, VGS = 10V GATE SOURCE DRAIN (FLANGE)


    Original     		PDF HUF75542P3, HUF75542S3S O-220AB O-263AB HUF75542P3 75542P 75542P AN9321 HUF75542P3 HUF75542S3S HUF75542S3ST TB334

    p-channel pspice model

    Abstract: AN9321 AN9322 MS-012AA RF1K49092 RF1K4909296
    Text: RF1K49092 S E M I C O N D U C T O R January 1997 3.5A/2.5A, 12V, Avalanche Rated, Logic Level, Complementary LittleFET Enhancement Mode Power MOSFET Features Description • 3.5A, 12V N-Channel 2.5A, 12V (P-Channel) • UIS Rating Curve The RF1K49092 complementary power MOSFET is


    Original     		PDF RF1K49092 RF1K49092 1e-30 61e-4 09e-6) 10e-3 99e-6) 82e-3 47e-7) p-channel pspice model AN9321 AN9322 MS-012AA RF1K4909296

    Untitled

    Abstract: No abstract text available
    Text: HUF75344G3, HUF75344P3, HUF75344S3S Semiconductor Data Sheet March 1999 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75344G3, HUF75344P3, HUF75344S3S 32e-3 52e-2 41e-1 13e-1 83e-2 HUF75344 15e-3

    MS-012AA

    Abstract: RF1K49224 RF1K4922496 TB334
    Text: RF1K49224 Data Sheet August 1999 File Number 3.5A/2.5A, 30V, 0.060/0.150 Ohms, Complementary LittleFET Power MOSFET Features The RF1K49224 complementary power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI


    Original     		PDF RF1K49224 RF1K49224 MS-012AA RF1K4922496 TB334

    AN9321

    Abstract: MS-012AA RF1K49092 RF1K4909296 TB334
    Text: RF1K49092 Data Sheet August 1999 File Number 3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET Power MOSFET Features This complementary power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits,


    Original     		PDF RF1K49092 AN9321 MS-012AA RF1K49092 RF1K4909296 TB334

    MOSFET S1A

    Abstract: datasheet RF3V49092 MO-169AB RF3S49092SM RF3S49092SM9A RF3V49092 AN9322
    Text: RF3V49092, RF3S49092SM Data Sheet 20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFET These complementary power MOSFETs are manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated


    Original     		PDF RF3V49092, RF3S49092SM 0A/10A, MOSFET S1A datasheet RF3V49092 MO-169AB RF3S49092SM RF3S49092SM9A RF3V49092 AN9322

    AN9321

    Abstract: AN9322 RF1S70N03SM RF1S70N03SM9A RFP70N03 TB334
    Text: RFP70N03, RF1S70N03SM Data Sheet 70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding


    Original     		PDF RFP70N03, RF1S70N03SM TA49025. AN9321 AN9322 RF1S70N03SM RF1S70N03SM9A RFP70N03 TB334

    65e9

    Abstract: irfp150n IRFP150N equivalent AN7254 AN7260 AN9321 AN9322 TB334
    Text: IRFP150N TM Data Sheet March 2000 File Number 4844 44A, 100V, 0.030 Ohm, N-Channel Power MOSFET Packaging Features JEDEC TO-247 SOURCE DRAIN GATE • Ultra Low On-Resistance - rDS ON = 0.030Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER


    Original     		PDF IRFP150N O-247 65e9 irfp150n IRFP150N equivalent AN7254 AN7260 AN9321 AN9322 TB334

    75339P

    Abstract: TA75339 75339G HUF75339G3 HUF75339P3 HUF75339S3S HUF75339S3ST TB334
    Text: HUF75339G3, HUF75339P3, HUF75339S3S Data Sheet June 1999 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75339G3, HUF75339P3, HUF75339S3S 43ucts 75339P TA75339 75339G HUF75339G3 HUF75339P3 HUF75339S3S HUF75339S3ST TB334

    75645p

    Abstract: mosfet 75645p 75645s AN9321 AN9322 HUF75645P3 HUF75645S3S HUF75645S3ST TB334
    Text: HUF75645P3, HUF75645S3S Data Sheet July 1999 File Number 4722.1 75A, 100V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs Packaging Features JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) • Ultra Low On-Resistance


    Original     		PDF HUF75645P3, HUF75645S3S O-220AB O-263AB HUF75645P3 75645P 75645p mosfet 75645p 75645s AN9321 AN9322 HUF75645P3 HUF75645S3S HUF75645S3ST TB334

    n20 n21 fet

    Abstract: 53E1 FDG6318PZ SC-70-6 SC70-6 dual transistors sc-70-6 N2 SC70 SC-70-6 zener 15v 27E4 55E-4
    Text: FDG6318PZ Dual P-Channel, Digital FET General Description Features These dual P-Channel logic level enhancement mode MOSFET are produced using Fairchild Semiconductor’s especially tailored to minimize on-state resistance. This device has been designed especially for bipolar digital


    Original     		PDF FDG6318PZ 1200m SC-70-6 n20 n21 fet 53E1 FDG6318PZ SC70-6 dual transistors sc-70-6 N2 SC70 SC-70-6 zener 15v 27E4 55E-4

    75329p

    Abstract: 75329G 75329S HUF75329G3 HUF75329P3 HUF75329S3S HUF75329S3ST TB334
    Text: HUF75329G3, HUF75329P3, HUF75329S3S Data Sheet January 2000 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75329G3, HUF75329P3, HUF75329S3S 75329p 75329G 75329S HUF75329G3 HUF75329P3 HUF75329S3S HUF75329S3ST TB334

    65e9

    Abstract: 75637s TB334 AN9321 AN9322 HUF75637P3 HUF75637S3S HUF75637S3ST 75637P 156E-9
    Text: HUF75637P3, HUF75637S3S Data Sheet October 1999 File Number 4721.1 44A, 100V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) • Ultra Low On-Resistance


    Original     		PDF HUF75637P3, HUF75637S3S O-220AB O-263AB HUF75637P3 75637P 65e9 75637s TB334 AN9321 AN9322 HUF75637P3 HUF75637S3S HUF75637S3ST 75637P 156E-9

    75337

    Abstract: 75337P HUF75337G3 HUF75337P3 HUF75337S3S HUF75337S3ST TB334 64e2
    Text: HUF75337G3, HUF75337P3, HUF75337S3S Data Sheet June 1999 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75337G3, HUF75337P3, HUF75337S3S 43ucts 75337 75337P HUF75337G3 HUF75337P3 HUF75337S3S HUF75337S3ST TB334 64e2

    75329D

    Abstract: AN7254 AN9321 AN9322 HUF75329D3 HUF75329D3S HUF75329D3ST TB334 RELAY TC1
    Text: HUF75329D3, HUF75329D3S Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75329D3, HUF75329D3S 75329D AN7254 AN9321 AN9322 HUF75329D3 HUF75329D3S HUF75329D3ST TB334 RELAY TC1

    14n05l

    Abstract: 14N05LSM RFD14N05L
    Text: is HARFRIS U U R F D 14N 0 5 L , R F D 14N 0 5 L S M , R F P 1 4 N 0 5 L. S E M I C O N D U C T O R 14A, 50V, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs D ece m b e r 1995 Packaging Features JE D EC TO-22QAB • 14A , 50V • ^DS{ON = 0.10012


    OCR Scan     		PDF O-22QAB -251A 89e-3 13e-5) 1e-30 18a-4 53e-6) 45e-3 14n05l 14N05LSM RFD14N05L

    LM 4088 relay

    Abstract: LM 17812
    Text: J lï H A R R IS UU RFD14N06L, RFD14N06LSM, RFP14N0ÔL S E M I C O N D U C T O R 14A, 60V, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs D ecem ber 19 9 5 Packaging Features JE D EC TO -220A B • 14A , 6 0 V • r DS ON = O - I O O tl


    OCR Scan     		PDF RFD14N06L, RFD14N06LSM, RFP14N0 -220A -251A RFP14N06L LM 4088 relay LM 17812