Untitled
Abstract: No abstract text available
Text: IRF530 TM Data Sheet February 2001 File Number 4843.1 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET Packaging Features JEDEC TO-220AB • Ultra Low On-Resistance - rDS ON = 0.064Ω, VGS = 10V SOURCE DRAIN GATE • Simulation Models - Temperature Compensated PSPICE and SABER
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IRF530
O-220AB
IRF530
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irf530
Abstract: 929E-10 IRF530 fairchild
Text: IRF530 Data Sheet February 2001 File Number 4843.1 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET [ /Title IRF53 0 /Subject (22A, 100V, 0.064 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil, semiconductor, 22A, 100V, 0.064 Ohm, NChannel Power
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IRF530
IRF53
O220AB
O-220AB
O-220AB
IRF530
929E-10
IRF530 fairchild
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IRF530
Abstract: IRF530T IRF530 fairchild 929e1 980E3 IRF530 mosfet ON semiconductor N51 IRF530 application
Text: IRF530 Data Sheet January 2002 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET Features Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE • Ultra Low On-Resistance - rDS(ON) = 0.064Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER
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Original
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IRF530
O-220AB
IRF530
IRF530T
IRF530 fairchild
929e1
980E3
IRF530 mosfet
ON semiconductor N51
IRF530 application
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