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    HRF3205 Price and Stock

    Rochester Electronics LLC HRF3205

    MOSFET N-CH 55V 100A TO220-3
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    DigiKey HRF3205 Bulk 190
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    onsemi HRF3205

    MOSFET N-CH 55V 100A TO220-3
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    DigiKey HRF3205 Reel
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    Newark HRF3205 Bulk 400
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    Rochester Electronics LLC HRF3205L

    100A 55V 0.008 OHM N-CHANNEL
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    DigiKey HRF3205L Bulk 314
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    Rochester Electronics LLC HRF3205_NL

    N-CHANNEL POWER MOSFET
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    DigiKey HRF3205_NL Bulk 275
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    Fairchild Semiconductor Corporation HRF3205ST

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    Bristol Electronics HRF3205ST 650
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    Quest Components HRF3205ST 520
    • 1 $4.65
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    • 100 $2.8675
    • 1000 $2.5575
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    Find more HRF3205 price and stock on Findchips.com

    HRF3205 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HRF3205 Fairchild Semiconductor 100A, 55V, 0.008 ?, N-Channel, Power MOSFETs Original PDF
    HRF3205 Fairchild Semiconductor 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFET Original PDF
    HRF3205 Intersil 100A, 55V, 0.008 ?, N-Channel, Power MOSFETs Features Original PDF
    HRF3205 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    HRF3205L Toshiba Power MOSFETs Cross Reference Guide Original PDF
    HRF3205_NL Fairchild Semiconductor 100A, 55V, 0.008 Ohm, N-Channel, PowerMOSFETs Original PDF
    HRF3205S Fairchild Semiconductor 100A, 55V, 0.008 ?, N-Channel, Power MOSFETs Original PDF
    HRF3205S Intersil 100A, 55V, 0.008 ?, N-Channel, Power MOSFETs Features Original PDF
    HRF3205ST Fairchild Semiconductor 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFET Original PDF
    HRF3205S/T Toshiba Power MOSFETs Cross Reference Guide Original PDF

    HRF3205 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    irf540n irf640

    Abstract: IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460
    Text: MOSFET Selection Trees Power MOSFET Products N-CHANNEL MOSFETs N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S


    Original     		BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 irf540n irf640 IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460 PDF

    HRF3205 equivalent

    Abstract: HRF3205 equivalent mosfet number DATASHEET hrf3205 HRF3205 data sheet mosfet HRF3205 HRF3205S HRF3205ST TB334
    Text: HRF3205, HRF3205S Data Sheet 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode


    Original     		HRF3205, HRF3205S HRF3205 equivalent HRF3205 equivalent mosfet number DATASHEET hrf3205 HRF3205 data sheet mosfet HRF3205 HRF3205S HRF3205ST TB334 PDF

    HRF3205 equivalent

    Abstract: HRF3205 equivalent mosfet number hrf3205 data sheet mosfet HRF3205 hrf3205 data hrf3205 datasheet HRF3205S HRF3205ST TB334 mosfet HRF3205
    Text: HRF3205, HRF3205S Data Sheet 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode


    Original     		HRF3205, HRF3205S HRF3205S HRF3205 53e-5 38e-3 00e-3 HRF3205 equivalent HRF3205 equivalent mosfet number hrf3205 data sheet mosfet HRF3205 hrf3205 data hrf3205 datasheet HRF3205ST TB334 mosfet HRF3205 PDF

    Untitled

    Abstract: No abstract text available
    Text: HRF3205, HRF3205S Data Sheet 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode


    Original     		HRF3205, HRF3205S PDF

    HRF3205 equivalent

    Abstract: HRF3205ST TB334 HRF3205 HRF3205S
    Text: HRF3205, HRF3205S Data Sheet 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode


    Original     		HRF3205, HRF3205S HRF3205 equivalent HRF3205ST TB334 HRF3205 HRF3205S PDF

    HRF3205L

    Abstract: mosfet HRF3205
    Text: HRF3205, HRF3205L, HRF3205S S E M I C O N D U C T O R 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs January 1998 Features Description • 100A Note 1 , 55V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		HRF3205, HRF3205L, HRF3205S 1-800-4-HARRIS HRF3205L mosfet HRF3205 PDF

    complementary of irf830

    Abstract: IRF630 complementary irf630 irf640 irf540n irf640 IRF640 irf510 IRFP150 Irfp250 irfp460 IRF640 IRFP150N IRF610 complementary
    Text: Power MOSFET Selection Trees TM N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S HUF75321P3 HUF75321S3S HUF75329D3


    Original     		BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 complementary of irf830 IRF630 complementary irf630 irf640 irf540n irf640 IRF640 irf510 IRFP150 Irfp250 irfp460 IRF640 IRFP150N IRF610 complementary PDF

    HRF3205 equivalent

    Abstract: data sheet mosfet HRF3205 HRF3205 equivalent mosfet number HRF3205 HRF3205S HRF3205ST TB334 mosfet HRF3205
    Text: HRF3205, HRF3205S Data Sheet 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode


    Original     		HRF3205, HRF3205S HRF3205 equivalent data sheet mosfet HRF3205 HRF3205 equivalent mosfet number HRF3205 HRF3205S HRF3205ST TB334 mosfet HRF3205 PDF

    h-bridge pwm schematics circuit

    Abstract: H-bridge speed control 12v 10a 10a h-bridge driver 12vdc motor forward reverse control diagram H-bridge motor drive source code h-bridge gate drive schematics circuit mosfet based h bridge TRANSISTORS BJT list Switching Power supply with HIP4080A HRF3205 equivalent
    Text: Column #52: Stamp-controlled High-power H-bridge Column #52, August 1999 by Lon Glazner: Stamp-Controlled High Power H-Bridge It seems like quite a few people are using BASIC Stamps as the brains in low-level robotics. Because of simplicity, ease of use, and versatility, it's no wonder that the


    Original     		PDF

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 PDF

    Complementary MOSFETs buz11

    Abstract: irfd120 Power MOSFET Selection Guide HRF3205 MOSFET Selection Guide IRFP440 BUZ71 IRFD120 HRF3205 equivalent IRF610 complementary IRFD110
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 Complementary MOSFETs buz11 irfd120 Power MOSFET Selection Guide HRF3205 MOSFET Selection Guide IRFP440 BUZ71 IRFD120 HRF3205 equivalent IRF610 complementary IRFD110 PDF

    IRFZ44N complementary

    Abstract: IRF3205 COMPLEMENTARY IRF3205 application a/surface mount IRFZ44N NBP6060 IRF3205 TO-220 philips 435-2 BUZ110S HRF3205 harris 4365
    Text: 39460.3 - UltraFET Cross LC 1/22/98 10:42 AM Page 1 55V UltraFET MOSFETs Competitive Cross Reference HARRIS RECOMMENDED PART NUMBER PART NUMBER PACKAGE COMPETITOR FILE NUMBER HARRIS RECOMMENDED PART NUMBER PART NUMBER PACKAGE COMPETITOR FILE NUMBER BUK7508-55


    Original     		BUK7508-55 BUK7514-55A BUK7524-55A BUK7530-55A BUK7570-55A BUZ100S BUZ102S BUZ110S BUZ111S IRF1010N IRFZ44N complementary IRF3205 COMPLEMENTARY IRF3205 application a/surface mount IRFZ44N NBP6060 IRF3205 TO-220 philips 435-2 HRF3205 harris 4365 PDF

    FDC6331

    Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
    Text: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3


    Original     		2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84 FDB045AN08A0 FDB2532 FDB3632 FDB3652 FDC6331 fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305 PDF

    12SnOFC

    Abstract: BQ37 PMC-90 PMC-90 leadframe material MKT-TO220B03 FDP3672 HRF3205 equivalent mosfet number Tamac4 a105 transistor HRF3205 equivalent
    Text: Date Created: 1/9/2004 Date Issued: 2/13/2004 PCN # 20040204 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will


    Original     		HUF75343P3 HUF75542P3 HUF75631P3 HUF75645P3 HUF75939P3 HUF76107P3 HUF76132P3 HUF76143P3 HUF76419P3 HUF76432P3 12SnOFC BQ37 PMC-90 PMC-90 leadframe material MKT-TO220B03 FDP3672 HRF3205 equivalent mosfet number Tamac4 a105 transistor HRF3205 equivalent PDF

    RFD14N05 spice

    Abstract: HUF76343 HRF3205 equivalent HUF75623P3 MOSFET S1A HRF3205 HUF76645P3 RF1K49093 RFP70N06 HRF3205S
    Text: Power MOSFET SPICE and Thermal Models Power MOSFET Products Features • • • • Sub Circuit Approach Full Operating Temperature Range Accurate Gate Charge Modeling BVDSS Modeling at Low and High Currents • • • Package Inductances Gate Source Resistance


    Original     		HRF3205 HRF3205S HRFZ44N HUF75229P3 HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S RFD14N05 spice HUF76343 HRF3205 equivalent HUF75623P3 MOSFET S1A HRF3205 HUF76645P3 RF1K49093 RFP70N06 HRF3205S PDF

    IGBT DRIVER ignition coil automotive

    Abstract: mosfet to ignition coil HGT1S14N40G3VLS HUF76639 N-channel MOSFET to-247 50a TO-252 N-channel power MOSFET HGTP14N45G3VL ignition IGBTS 60V 60A TO-252 N-CHANNEL 60V 60A TO-252
    Text: 107730 Auto Line Card_PW 8/24/00 7:48 PM Page 1 www.intersil.com Automotive Discrete Power Products UltraFET MOSFETs and IGBTs enhance the peak performance of automotive systems in the 21st century Intersil is proud to continue introducing exciting new families of


    Original     		HUF75639P3, HUF75639S3S HUF75637P3, HUF75637S3S HUF75631P3 HUF75623P3 FN4477 FN4721 FN4720 FN4804 IGBT DRIVER ignition coil automotive mosfet to ignition coil HGT1S14N40G3VLS HUF76639 N-channel MOSFET to-247 50a TO-252 N-channel power MOSFET HGTP14N45G3VL ignition IGBTS 60V 60A TO-252 N-CHANNEL 60V 60A TO-252 PDF

    rh-24v

    Abstract: JESD22-A105 a105 transistor HUF75309D3ST HRF3205 equivalent JESD22-A110 RFD3055LESM9A rfp70n06 transistor a105 100C
    Text: Date Created: 2/24/2004 Date Issued: 4/8/2004 PCN # 20040802 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will


    Original     		RFG70N06 RFP45N06 HRF3205 HUF75307D3ST HUF75309D3S HUF75309T3ST HUF75321D3ST HUF75321S3ST R4908 HUF75329D3ST rh-24v JESD22-A105 a105 transistor HUF75309D3ST HRF3205 equivalent JESD22-A110 RFD3055LESM9A rfp70n06 transistor a105 100C PDF

    HUF75309D3ST

    Abstract: HRF3205 equivalent RFD3055LESM9A RFP70N06 HUF75344P3 100C BUZ11 RFP50N06 RFD16N05LSM9A rfp50n06 reference
    Text: Date Created: 3/8/2004 Date Issued: 3/23/2004 PCN # 20041001 DESIGN/PROCESS CHANGE NOTIFICATION - FINAL Reference FCST PCN number 20030402-A. This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original     		0030402-A. ClinF75345P3 HUF75345S3ST RFD14N05 RFD14N05LSM9A RFD16N05 RFD16N05SM RFD3055LE RFD3055SM RFG70N06 HUF75309D3ST HRF3205 equivalent RFD3055LESM9A RFP70N06 HUF75344P3 100C BUZ11 RFP50N06 RFD16N05LSM9A rfp50n06 reference PDF

    irf 425

    Abstract: ICL8038CCPD HSMS-2820-BLK icl8038ccjd IRF 315 HSDL-1001-001 hsmp-3890 ICL232CPE HSMP 2820 ICM7211AMIPL
    Text: Semiconductor Directory Page 1.34 1.58 1.54 0.87 2.09 IRF INT IRF IRF IRF 815 824 815 Ñ 816 IRF9410 IRF9510 IRF9510S IRF9520 IRF9520 IRF9520N IRF9530 1.28 0.80 1.47 0.74 0.62 1.04 1.23 IRF IRF IRF IRF INT IRF INT 816 815 816 815 Ñ 814 824 Ñ 824 Ñ 816 815


    Original     		HIP4080AIP ICM7243BIPL IRF3515S IRF840 HIP4081AIP ICM7555CN IRF3710 HIP4082IP ICM7555IBA irf 425 ICL8038CCPD HSMS-2820-BLK icl8038ccjd IRF 315 HSDL-1001-001 hsmp-3890 ICL232CPE HSMP 2820 ICM7211AMIPL PDF

    Untitled

    Abstract: No abstract text available
    Text: HRF3205, HRF3205S Semiconductor June 1999 Data Sheet 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    OCR Scan     		HRF3205, HRF3205S HRF3205 53e-5 38e-3 00e-3 50e-2 33e-1 PDF

    f3205

    Abstract: No abstract text available
    Text: interrii HRF3205, HRF3205S D a ta S h e e t 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode


    OCR Scan     		HRF3205, HRF3205S f3205 PDF

    transistors 1UW 18

    Abstract: mosfet HRF3205 1AV Series
    Text: HRF3205, HRF3205L, HRF3205S HARRIS S E M I C O N D U C T O R 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs January 1998 Features Description • 1 00A Note 1 , 55V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan     		HRF3205, HRF3205L, HRF3205S 1-800-4-HARRIS transistors 1UW 18 mosfet HRF3205 1AV Series PDF

    f 0472 N-Channel MOSFET

    Abstract: hrf3205 mosfet HRF3205
    Text: HRF3205, HRF3205S in te ik il J u n e 1999 Data S h e e t 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    OCR Scan     		HRF3205, HRF3205S HRF3205S f 0472 N-Channel MOSFET hrf3205 mosfet HRF3205 PDF

    TRANSISTORS 132 GD

    Abstract: No abstract text available
    Text: HRF3205, HRF3205L, HRF3205S S em iconductor Data Sheet 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    OCR Scan     		HRF3205, HRF3205L, HRF3205S O-263AB O-263AB TRANSISTORS 132 GD PDF