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    HUF75339S3ST Search Results

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    HUF75339S3ST Price and Stock

    Rochester Electronics LLC HUF75339S3ST

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HUF75339S3ST Bulk 314
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.96
    • 10000 $0.96
    		Buy Now

    Fairchild Semiconductor Corporation HUF75339S3ST

    75A, 55V, 0.012ohm, N-Channel Power MOSFET, TO-263AB '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics HUF75339S3ST 1,450 1
    • 1 $0.9208
    • 10 $0.9208
    • 100 $0.8656
    • 1000 $0.7827
    • 10000 $0.7827
    		Buy Now

    Fairchild Semiconductor Corporation HUF75339S3S_TR4935

    HUF75339S3S - N-Channel UltraFET Power MOSFET 55V, 75A '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics HUF75339S3S_TR4935 123 1
    • 1 $0.7583
    • 10 $0.7583
    • 100 $0.7128
    • 1000 $0.6446
    • 10000 $0.6446
    		Buy Now

    HUF75339S3ST Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HUF75339S3ST Fairchild Semiconductor 75 A, 55 V, 0.012 ohm, N-Channel UltraFET Power MOSFET Original PDF
    HUF75339S3ST Intersil MOSFET, Enhancement, N Channel, 55V, TO-263, 3-Pin Original PDF
    HUF75339S3S/T Toshiba Power MOSFETs Cross Reference Guide Original PDF

    HUF75339S3ST Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: HUF75339G3, HUF75339P3, HUF75339S3S Data Sheet December 2001 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		HUF75339G3, HUF75339P3, HUF75339S3S PDF

    75339p

    Abstract: TA75339 504E3 75339G HUF75339G3 HUF75339P3 HUF75339S3S HUF75339S3ST TB334
    Text: HUF75339G3, HUF75339P3, HUF75339S3S Data Sheet December 2001 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		HUF75339G3, HUF75339P3, HUF75339S3S 97e-2 HUF75339 00e-3 90e-2 95e-3 95e-2 75339p TA75339 504E3 75339G HUF75339G3 HUF75339P3 HUF75339S3S HUF75339S3ST TB334 PDF

    HRF3205 equivalent

    Abstract: HUF75343S3 RFP70N06 100C BUZ11 HUF75344P3 HUF75329D3ST RFD16N05LSM9A
    Text: Date Created: 3/29/2004 Date Issued: 4/6/2004 PCN # 20041001-A DESIGN/PROCESS CHANGE NOTIFICATION - FINAL Reference FCST PCN number 20030402-A. This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original     		0041001-A 0030402-A. RFD14N05 RFD14N05LSM9A RFD16N05 RFD16N05SM RFD3055LE RFD3055SM RFG70N06 RFP45N06 HRF3205 equivalent HUF75343S3 RFP70N06 100C BUZ11 HUF75344P3 HUF75329D3ST RFD16N05LSM9A PDF

    75339P

    Abstract: 75339 HUF75339G3 35E-1 75339G HUF75339 HUF75339P3 HUF75339S3 HUF75339S3S HUF75339S3ST
    Text: HUF75339G3, HUF75339P3, HUF75339S3, HUF75339S3S S E M I C O N D U C T O R 70A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs August 1997 Features Description • 70A, 55V The HUF75339 N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced


    Original     		HUF75339G3, HUF75339P3, HUF75339S3, HUF75339S3S HUF75339 1-800-4-HARRIS 75339P 75339 HUF75339G3 35E-1 75339G HUF75339P3 HUF75339S3 HUF75339S3S HUF75339S3ST PDF

    rh-24v

    Abstract: JESD22-A105 a105 transistor HUF75309D3ST HRF3205 equivalent JESD22-A110 RFD3055LESM9A rfp70n06 transistor a105 100C
    Text: Date Created: 2/24/2004 Date Issued: 4/8/2004 PCN # 20040802 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will


    Original     		RFG70N06 RFP45N06 HRF3205 HUF75307D3ST HUF75309D3S HUF75309T3ST HUF75321D3ST HUF75321S3ST R4908 HUF75329D3ST rh-24v JESD22-A105 a105 transistor HUF75309D3ST HRF3205 equivalent JESD22-A110 RFD3055LESM9A rfp70n06 transistor a105 100C PDF

    HUF75309D3ST

    Abstract: HRF3205 equivalent RFD3055LESM9A RFP70N06 HUF75344P3 100C BUZ11 RFP50N06 RFD16N05LSM9A rfp50n06 reference
    Text: Date Created: 3/8/2004 Date Issued: 3/23/2004 PCN # 20041001 DESIGN/PROCESS CHANGE NOTIFICATION - FINAL Reference FCST PCN number 20030402-A. This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original     		0030402-A. ClinF75345P3 HUF75345S3ST RFD14N05 RFD14N05LSM9A RFD16N05 RFD16N05SM RFD3055LE RFD3055SM RFG70N06 HUF75309D3ST HRF3205 equivalent RFD3055LESM9A RFP70N06 HUF75344P3 100C BUZ11 RFP50N06 RFD16N05LSM9A rfp50n06 reference PDF

    16E-5

    Abstract: HUF75339G3 HUF75339P3 HUF75339S3 HUF75339S3S HUF75339S3ST TA75339 TB334 75339S3
    Text: HUF75339G3, HUF75339P3, HUF75339S3, HUF75339S3S S E M I C O N D U C T O R 70A, 55V, 0.012 Ohm, N-Channel, UltraFET Power MOSFETs March 1998 Features Description • 70A, 55V • Ultra Low On-Resistance, rDS ON = 0.012Ω • Diode Exhibits Both High Speed and Soft Recovery


    Original     		HUF75339G3, HUF75339P3, HUF75339S3, HUF75339S3S TB334, 1-800-4-HARRIS 16E-5 HUF75339G3 HUF75339P3 HUF75339S3 HUF75339S3S HUF75339S3ST TA75339 TB334 75339S3 PDF

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note PDF

    75339p

    Abstract: 75339g HUF75339P HUF75339G3 HUF75339P3 HUF75339S3S HUF75339S3ST TA75339 TB334
    Text: HUF75339G3, HUF75339P3, HUF75339S3S Data Sheet December 2001 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		HUF75339G3, HUF75339P3, HUF75339S3S 75339p 75339g HUF75339P HUF75339G3 HUF75339P3 HUF75339S3S HUF75339S3ST TA75339 TB334 PDF

    75339p

    Abstract: 75339G HUF75339G3 HUF75339P3 HUF75339S3S HUF75339S3ST TA75339 TB334 75339 HUF75339P
    Text: HUF75339G3, HUF75339P3, HUF75339S3S Data Sheet June 1999 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		HUF75339G3, HUF75339P3, HUF75339S3S 75339p 75339G HUF75339G3 HUF75339P3 HUF75339S3S HUF75339S3ST TA75339 TB334 75339 HUF75339P PDF

    75339P

    Abstract: TA75339 75339G HUF75339G3 HUF75339P3 HUF75339S3S HUF75339S3ST TB334
    Text: HUF75339G3, HUF75339P3, HUF75339S3S Data Sheet June 1999 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		HUF75339G3, HUF75339P3, HUF75339S3S 43ucts 75339P TA75339 75339G HUF75339G3 HUF75339P3 HUF75339S3S HUF75339S3ST TB334 PDF

    20e9

    Abstract: No abstract text available
    Text: HUF75339G3, HUF75339P3, HUF75339S3S Data Sheet December 2001 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		HUF75339G3, HUF75339P3, HUF75339S3S 20e9 PDF

    75339p

    Abstract: 75339g TA75339 263A tic 263a 75339S F75339P3
    Text: in te fsil HUF75339G3, HUF75339P3, HUF75339S3S D a ta S h e e t J u n e 1999 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		HUF75339G3, HUF75339P3, HUF75339S3S HUF7S339G3, HUF75339S3S AN7260. 75339p 75339g TA75339 263A tic 263a 75339S F75339P3 PDF

    75339P3

    Abstract: No abstract text available
    Text: HUF75339G3, HUF75339P3, HUF75339S3, HUF75339S3S Semiconductor Data Sheet 70A, 55V, 0.012 Ohm, N-Channel, UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		HUF75339G3, HUF75339P3, HUF75339S3, HUF75339S3S O-263AB O-263AB 75339P3 PDF

    75339p

    Abstract: 75339g TA75339 75339 HUF75339G3 HUF75339P3 HUF75339S3S HUF75339S3ST TB334 504E3
    Text: HUF75339G3, HUF75339P3, HUF75339S3S Semiconductor June 1999 Data Sheet 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		HUF75339G3, HUF75339P3, HUF75339S3S 54e-2 98e-1 99e-1 97e-2 HUF75339 00e-3 90e-2 75339p 75339g TA75339 75339 HUF75339G3 HUF75339P3 HUF75339S3S HUF75339S3ST TB334 504E3 PDF

    Untitled

    Abstract: No abstract text available
    Text: HUF75339G3, HUF75339P3, HUF75339S3S Semiconductor Data Sheet June 1999 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		HUF75339G3, HUF75339P3, HUF75339S3S 98e-1 99e-1 97e-2 HUF75339 00e-3 90e-2 95e-3 PDF