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    75329G Price and Stock

    onsemi HUF75329G3

    MOSFET N-CH 55V 49A TO247-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HUF75329G3 Tube 150
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.9558
    • 10000 $0.9558
    Buy Now

    Rochester Electronics LLC HUFA75329G3

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HUFA75329G3 Bulk 4
    • 1 -
    • 10 $98.22
    • 100 $98.22
    • 1000 $98.22
    • 10000 $98.22
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    Fairchild Semiconductor Corporation HUFA75329G3

    49A, 55V, 0.024ohm, N-Channel Power MOSFET, TO-247 '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics HUFA75329G3 2,700 1
    • 1 $94.44
    • 10 $94.44
    • 100 $88.77
    • 1000 $80.27
    • 10000 $80.27
    Buy Now

    75329G Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    75329G

    Abstract: 75329P 75329S HUF75329G3 HUF75329P3 HUF75329S3S HUF75329S3ST TB334
    Text: 75329G3, HUF75329P3, HUF75329S3S Data Sheet December 2001 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


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    HUF75329G3, HUF75329P3, HUF75329S3S 75329G 75329P 75329S HUF75329G3 HUF75329P3 HUF75329S3S HUF75329S3ST TB334 PDF

    75329p

    Abstract: 75329G HUF75329P3 HUF75329S3ST TB334 75329S HUF75329G3 HUF75329S3S 75329
    Text: 75329G3, HUF75329P3, HUF75329S3S Data Sheet January 2000 File Number 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology


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    HUF75329G3, HUF75329P3, HUF75329S3S 75329p 75329G HUF75329P3 HUF75329S3ST TB334 75329S HUF75329G3 HUF75329S3S 75329 PDF

    75329p

    Abstract: 75329G HUFA75329S3S TB334 75329S HUFA75329G3 HUFA75329P3 HUFA75329S3ST
    Text: 75329G3, HUFA75329P3, HUFA75329S3S Data Sheet June 2002 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


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    HUFA75329G3, HUFA75329P3, HUFA75329S3S 75329p 75329G HUFA75329S3S TB334 75329S HUFA75329G3 HUFA75329P3 HUFA75329S3ST PDF

    75329P

    Abstract: 75329s 75329G HUF75329G3 HUF75329P3 HUF75329S3 HUF75329S3S HUF75329S3ST EIA rs 481 286
    Text: 75329G3, HUF75329P3, HUF75329S3, HUF75329S3S S E M I C O N D U C T O R 42A, 55V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs August 1997 Features Description • 42A, 55V The HUF75329 N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced


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    HUF75329G3, HUF75329P3, HUF75329S3, HUF75329S3S HUF75329 1-800-4-HARRIS 75329P 75329s 75329G HUF75329G3 HUF75329P3 HUF75329S3 HUF75329S3S HUF75329S3ST EIA rs 481 286 PDF

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


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    1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note PDF

    75329P

    Abstract: 75329G 75329S HUF75329G3 HUF75329P3 HUF75329S3 HUF75329S3S TB334
    Text: 75329G3, HUF75329P3, HUF75329S3, HUF75329S3S S E M I C O N D U C T O R 42A, 55V, 0.025 Ohm, N-Channel, UltraFET Power MOSFETs February 1998 Features Description • 42A, 55V • Ultra Low On-Resistance, rDS ON = 0.025Ω • Diode Exhibits Both High Speed and Soft Recovery


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    HUF75329G3, HUF75329P3, HUF75329S3, HUF75329S3S TB334, HUF75329 1-800-4-HARRIS 75329P 75329G 75329S HUF75329G3 HUF75329P3 HUF75329S3 HUF75329S3S TB334 PDF

    75329p

    Abstract: 75329G 75329S HUF75329G3 HUF75329P3 HUF75329S3S HUF75329S3ST TB334
    Text: 75329G3, HUF75329P3, HUF75329S3S Data Sheet January 2000 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


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    HUF75329G3, HUF75329P3, HUF75329S3S 75329p 75329G 75329S HUF75329G3 HUF75329P3 HUF75329S3S HUF75329S3ST TB334 PDF

    Untitled

    Abstract: No abstract text available
    Text: 75329G3, HUFA75329P3, HUFA75329S3S TM Data Sheet November 2000 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    HUFA75329G3, HUFA75329P3, HUFA75329S3S PDF

    75329p

    Abstract: 75329G 37E4 75329S HUF75329G3 HUF75329P3 HUF75329S3S HUF75329S3ST TB334 TO220 NMOS
    Text: interrii 75329G3, HUF75329P3, HUF75329S3S January 2000 Data Sheet 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs -9 These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan
    HUF75329G3, HUF75329P3, HUF75329S3S 75329p 75329G 37E4 75329S HUF75329G3 HUF75329P3 HUF75329S3S HUF75329S3ST TB334 TO220 NMOS PDF

    75329p

    Abstract: 75329G HUF75329G3
    Text: in t e is il 75329G3, HUF75329P3, HUF75329S3S D a ta S h e e t J a n u a ry 2000 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology


    OCR Scan
    HUF75329G3, HUF75329P3, HUF75329S3S HUF7S329P3, HUF7S329S3S AN7254 AN7260. 75329p 75329G HUF75329G3 PDF

    75329s

    Abstract: HUF75329P3 19407
    Text: 75329G3, HUF75329P3, HUF75329S3, HUF75329S3S HARRIS S E M I C O N D U C T O R 42A, 55V, 0.025 Ohm, N-Channel, UltraFET Power MOSFETs February 1998 MM Features • 42A, 55V • Ultra Low On-Resistance, ros ON = 0.025(2 • Diode Exhibits Both High Speed and Soft Recovery


    OCR Scan
    HUF75329G3, HUF75329P3, HUF75329S3, HUF75329S3S TB334, HUF75329 1-800-4-HARRIS 75329s HUF75329P3 19407 PDF