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    75329S Price and Stock

    onsemi HUFA75329S3S

    MOSFET N-CH 55V 49A D2PAK
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    DigiKey HUFA75329S3S Tube 400
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    • 1000 $0.76243
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    Rochester Electronics LLC HUFA75329S3ST

    MOSFET N-CH 55V 49A D2PAK
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    DigiKey HUFA75329S3ST Bulk 683
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    • 1000 $0.44
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    onsemi HUFA75329S3ST

    MOSFET N-CH 55V 49A D2PAK
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    DigiKey HUFA75329S3ST Reel 800
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    • 1000 $0.73593
    • 10000 $0.615
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    Intersil Corporation HUF75329S3ST

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    Bristol Electronics HUF75329S3ST 1,799
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    Fairchild Semiconductor Corporation HUF75329S3

    HUF75329 - 42A, 55V, 0.025ohm, N-Channel Power MOSFET, TO-262AA '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics HUF75329S3 1 1
    • 1 $0.3467
    • 10 $0.3467
    • 100 $0.3259
    • 1000 $0.2947
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    75329S Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    75329G

    Abstract: 75329P 75329S HUF75329G3 HUF75329P3 HUF75329S3S HUF75329S3ST TB334
    Text: HUF75329G3, HUF75329P3, 75329S3S Data Sheet December 2001 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		HUF75329G3, HUF75329P3, HUF75329S3S 75329G 75329P 75329S HUF75329G3 HUF75329P3 HUF75329S3S HUF75329S3ST TB334 PDF

    75329p

    Abstract: 75329G HUF75329P3 HUF75329S3ST TB334 75329S HUF75329G3 HUF75329S3S 75329
    Text: HUF75329G3, HUF75329P3, 75329S3S Data Sheet January 2000 File Number 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology


    Original     		HUF75329G3, HUF75329P3, HUF75329S3S 75329p 75329G HUF75329P3 HUF75329S3ST TB334 75329S HUF75329G3 HUF75329S3S 75329 PDF

    75329p

    Abstract: 75329G HUFA75329S3S TB334 75329S HUFA75329G3 HUFA75329P3 HUFA75329S3ST
    Text: HUFA75329G3, HUFA75329P3, 75329S3S Data Sheet June 2002 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		HUFA75329G3, HUFA75329P3, HUFA75329S3S 75329p 75329G HUFA75329S3S TB334 75329S HUFA75329G3 HUFA75329P3 HUFA75329S3ST PDF

    75329P

    Abstract: 75329s 75329G HUF75329G3 HUF75329P3 HUF75329S3 HUF75329S3S HUF75329S3ST EIA rs 481 286
    Text: HUF75329G3, HUF75329P3, 75329S3, 75329S3S S E M I C O N D U C T O R 42A, 55V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs August 1997 Features Description • 42A, 55V The HUF75329 N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced


    Original     		HUF75329G3, HUF75329P3, HUF75329S3, HUF75329S3S HUF75329 1-800-4-HARRIS 75329P 75329s 75329G HUF75329G3 HUF75329P3 HUF75329S3 HUF75329S3S HUF75329S3ST EIA rs 481 286 PDF

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note PDF

    75329P

    Abstract: 75329G 75329S HUF75329G3 HUF75329P3 HUF75329S3 HUF75329S3S TB334
    Text: HUF75329G3, HUF75329P3, 75329S3, 75329S3S S E M I C O N D U C T O R 42A, 55V, 0.025 Ohm, N-Channel, UltraFET Power MOSFETs February 1998 Features Description • 42A, 55V • Ultra Low On-Resistance, rDS ON = 0.025Ω • Diode Exhibits Both High Speed and Soft Recovery


    Original     		HUF75329G3, HUF75329P3, HUF75329S3, HUF75329S3S TB334, HUF75329 1-800-4-HARRIS 75329P 75329G 75329S HUF75329G3 HUF75329P3 HUF75329S3 HUF75329S3S TB334 PDF

    75329p

    Abstract: 75329G 75329S HUF75329G3 HUF75329P3 HUF75329S3S HUF75329S3ST TB334
    Text: HUF75329G3, HUF75329P3, 75329S3S Data Sheet January 2000 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		HUF75329G3, HUF75329P3, HUF75329S3S 75329p 75329G 75329S HUF75329G3 HUF75329P3 HUF75329S3S HUF75329S3ST TB334 PDF

    Untitled

    Abstract: No abstract text available
    Text: HUFA75329G3, HUFA75329P3, 75329S3S TM Data Sheet November 2000 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		HUFA75329G3, HUFA75329P3, HUFA75329S3S PDF

    75329p

    Abstract: 75329G 37E4 75329S HUF75329G3 HUF75329P3 HUF75329S3S HUF75329S3ST TB334 TO220 NMOS
    Text: interrii HUF75329G3, HUF75329P3, 75329S3S January 2000 Data Sheet 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs -9 These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		HUF75329G3, HUF75329P3, HUF75329S3S 75329p 75329G 37E4 75329S HUF75329G3 HUF75329P3 HUF75329S3S HUF75329S3ST TB334 TO220 NMOS PDF

    75329p

    Abstract: 75329G HUF75329G3
    Text: in t e is il HUF75329G3, HUF75329P3, 75329S3S D a ta S h e e t J a n u a ry 2000 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology


    OCR Scan     		HUF75329G3, HUF75329P3, HUF75329S3S HUF7S329P3, HUF7S329S3S AN7254 AN7260. 75329p 75329G HUF75329G3 PDF

    75329s

    Abstract: HUF75329P3 19407
    Text: HUF75329G3, HUF75329P3, 75329S3, 75329S3S HARRIS S E M I C O N D U C T O R 42A, 55V, 0.025 Ohm, N-Channel, UltraFET Power MOSFETs February 1998 MM Features • 42A, 55V • Ultra Low On-Resistance, ros ON = 0.025(2 • Diode Exhibits Both High Speed and Soft Recovery


    OCR Scan     		HUF75329G3, HUF75329P3, HUF75329S3, HUF75329S3S TB334, HUF75329 1-800-4-HARRIS 75329s HUF75329P3 19407 PDF