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    S22160 Search Results

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    S22160 Price and Stock

    Newava Technology Inc S22160

    TRANSFORMER FOR CS 8401,2:8411
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    DigiKey S22160 Cut Tape 605 1
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    S22160 Reel 400 400
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    Component Electronics, Inc S22160 651
    • 1 $4.62
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    C&K PS221605FNS

    SWITCH PUSHBUTTON
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    KEMET Corporation USEQMSKS221600

    EVAL KIT SENSOR USEQMSEA221680
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    DigiKey USEQMSKS221600 Box 1
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    USEQMSKS221600 Bulk 1
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    Onlinecomponents.com USEQMSKS221600 1
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    Avnet Abacus USEQMSKS221600 12 Weeks 1
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    Hirschmann Electronics GmbH & Co Kg RS22-1600T1T1SPAEHF

    Rs22-1600T1T1Spaehfxx.x. |Hirschmann RS22-1600T1T1SPAEHF
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    Newark RS22-1600T1T1SPAEHF Bulk 1
    • 1 $6584.73
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    Hirschmann Electronics GmbH & Co Kg RS22-1600T1T1SPAPHF

    Rs22-1600T1T1Spaphfxx.x. |Hirschmann RS22-1600T1T1SPAPHF
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    Newark RS22-1600T1T1SPAPHF Bulk 1
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    S22160 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    S22160 Newava Technology Pulse Transformers, Transformers, TRANSFORMER FOR CS 8401,2:8411 Original PDF
    S2216-01 Unknown The Optical Devices Data Book (Japanese) Scan PDF
    S-2216-02 Unknown The Optical Devices Data Book (Japanese) Scan PDF

    S22160 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    S22160

    Abstract: VAC PULSE TRANSFORMER Pulse Transformer VAC 3 phase transformer 6 pin pulse transformer 8412 N pulse transformer Transformer 0.1V CS8401
    Text: SPECIFICATIONS: Max 0.65 N.T. YYWW S22160 . 1. INDUCTANCE: @ 10 kHz, 0.1 Vrms, 1 - 3 > 225 uHy 3 2. DCR: mOHMS MAX 1 - 3 = 0.1 4 - 6 = 0.1 0.385 Max 3. LEAKAGE INDUCTANCE: 1 - 3, 0.1V @ 100kHz SHORT 4 - 6 < 0.5 uHy 1 0.250 Max 0.200 4 6 0.100 4. INTERWINDING CAPACITANCE:


    Original     		S22160 100kHz CS8401 S22160 VAC PULSE TRANSFORMER Pulse Transformer VAC 3 phase transformer 6 pin pulse transformer 8412 N pulse transformer Transformer 0.1V PDF

    Untitled

    Abstract: No abstract text available
    Text: SPECIFICATIONS: Max 0.65 N.T. YYWW S22160 . 1. INDUCTANCE: @ 10 kHz, 0.1 Vrms, 1 - 3 > 225 uHy 3 2. DCR: mOHMS MAX 1 - 3 = 0.1 4 - 6 = 0.1 0.385 Max 3. LEAKAGE INDUCTANCE: 1 - 3, 0.1V @ 100kHz SHORT 4 - 6 < 0.5 uHy 1 0.250 Max 0.200 4 6 0.100 4. INTERWINDING CAPACITANCE:


    Original     		S22160 100kHz CS8401 PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


    Original     		AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx PDF

    Untitled

    Abstract: No abstract text available
    Text: 0003b2fi HSt HPKJ PIN Silicon Photodiodes 3 Range Peak Sensitivity Wavelength À A p (nm) (nm) Spectral Dimensional Type No. Outline Package (P.42,43) Active Area Effective Size Active Area (mm) ( m m 2) 2.77X2.77 7.7 S2506-02 • S2506-04 S4707-01 S5077


    OCR Scan     		0003b2fi 633nm 930nm S2506-04 S2973 S3321 S4707-01 S5573 KSPDA0061EA KSPDA0062EA PDF

    G1125-02

    Abstract: S2216 02 S1863 G1126-02
    Text: HAMAMATSU CORP ITE D • 422^0^ 00G2534 1 ■ GaAsP Photodiodes Photosensitive Surface Spectral Response Typical Radiant Sensitivity A/W Outlines Type No. Window Materials Characteristics (25°C) Package (mm) Size Effective Area Range Peak Wave­ length


    OCR Scan     		00G2534 254nm 560nm 633nm G1125-02 G1126-02 G1127-02 G2119 G1745 G1746 S2216 02 S1863 PDF

    hamamatsu S875

    Abstract: S1190-01 S1188-02 S2387-16R 900nm LED S2506 S1190 hamamatsu S1721 S2216 02 Hamamatsu S1133
    Text: HAMAMATSU CORP n E Silicon Photodiodes Type No. D • ‘JHST b G ' i 0 0 G S S 24 Visible Light to IR, for Precision Photometry Photosensitive Surface Spectral Response Out­ line Package (mm) «J Characteristics (25°C) Radian Sensitivity (A/W) Size


    OCR Scan     		560nm 633nm 930nm S2386 S2386-18K S1133-01, S1133-11, S1087-01, G1118, G1738 hamamatsu S875 S1190-01 S1188-02 S2387-16R 900nm LED S2506 S1190 hamamatsu S1721 S2216 02 Hamamatsu S1133 PDF

    C2719

    Abstract: S1190-01 s1223 pin photodiode S4160 equivalent s12271010b S4753 S3407-01 hamamatsu S1336 S4160 G1118
    Text: MHE'ìbCH 0 G03 b S l fi 3 T • HPKJ PHOTO ICs A photodiode and signal processing circuit are integrated. Photo ICs are intelligent light sensors consisting of a photodiode, signal processing circuit and signal output circuit. Molded in subminiature packages, these photo ICs are especially suited for


    OCR Scan     		S4282-11 S4285-40 S4810 KSPDA00060EA S2833 S2833-01 KSPDA0061EA KSPDA0062EA D003t G2711-01 C2719 S1190-01 s1223 pin photodiode S4160 equivalent s12271010b S4753 S3407-01 hamamatsu S1336 S4160 G1118 PDF

    AP 1100 R1

    Abstract: S1190 S1190-01 S1190-03 S2216-01 S2840
    Text: PIN Silicon Photodiodes 1 Type No. Dimensional Outline (P.38)/ Window M aterial*1 Package 0 /K 3-pin TO-18 S2840 S1190 O /K S1190-01 L S1190-03 0 /K S1190-13 O /L (p 0.8 0.5 320 to 1060 900 0.57 0.55 jS0.4 0.12 ji 0.8 0.5 320 to 1000 800 0.5 0.32 Effective


    OCR Scan     		633nm 930nm S2216-01 S2839 S2840 S1190 S1190-01 S1190-03 S1190-13 KPINB0049EA AP 1100 R1 PDF

    P873-G35-552

    Abstract: p1760-04 P873-13
    Text: Opto-semiconductors CONDENSED CATALOG 1987 Hamamatsu Photonics Solid State Division has devel­ oped a variety of opto-electronic semiconductor de­ vices. These competitively priced high quality products are designed to meet the requirements of general and


    OCR Scan     		S-114 DK-2000 JAN/87 P873-G35-552 p1760-04 P873-13 PDF

    S1190 hamamatsu

    Abstract: s1188 S1190-04 S2216-02 Q422 S2216 02 S1223-01 S1190-03 S-2216-02
    Text: HAMAMATSU Pin CORP AT silicon Hnotoûioaes Q4229ßDJ9 HAMAMATSU CORP DE 89D Ò20Ò2 F eatures Window Materials S1188-02 U ltra-high speed response Q / K S1188-06 S 2216-01 U ltra-high speed response, low bias type Q /K S1190 High-speed response O'/K S 1 190-01


    OCR Scan     		Q4229 633nm 930nm S1188-02 S1188-06 S2506-01 S2336 S2337 S1190 hamamatsu s1188 S1190-04 S2216-02 Q422 S2216 02 S1223-01 S1190-03 S-2216-02 PDF

    S1722-01

    Abstract: S1723-04 S1723-06 S1723-08 S-1721 S1721 S1863 G1117 si7202 S2164-01
    Text: HAMAMATSU CORP 11E D • 452=^0= Q G G 2 S 3 0 4 ■ T ^ m - 6 3 PIN Silicon Photodiodes Photosensitive Surface Spectral Response Characteristics at 25°C) Radiant Sensitivity Typ. (A/W) Outlines Type No. Features S1722 2.54mm dia. sensitive area, for visible to IR


    OCR Scan     		S1721 S1722 S1722-01 S1722-02 S1863 S1863-01 S1723-04 S1723-08 S1723-06 S1723-05 S-1721 G1117 si7202 S2164-01 PDF

    S3407

    Abstract: S4036 S5533
    Text: Dimensional Outlines Unit : m m O S1226-18BQ, etc. 0 S1190-01, etc. 0 S2386-18L # 5 4 -0 2 WI NDOW iy o *o¿ ^ 4 PS > 0 j o 0 S5531, S5532, S5533 0 S2216-01, etc. O S1190-13 2 ^ r> 4 t ü i- 4 fih ‘ :i i V* 4 6>cj • 0 1 : o -cP -l: • > *'<i Y", 5 K 1 y jtj ¡Inirosiln . it«- ijl.iss!


    OCR Scan     		S1226-18BQ, S2386-18L S1190-01, S1190-13 S2216-01, S5531, S5532, S5533 S2381, S2382, S3407 S4036 S5533 PDF

    S5532

    Abstract: No abstract text available
    Text: GGG3bEb bfl3 • HPKJ PIN Silicon Photodiodes 2 Dimensional Outline Type No. Package Window Material* S4280 O /K S5531 O /L 3-pin T O -1 8 with lens S4752 O /K 3-pin T O -1 8 S4753 ^ S5533 * Effective Size Active Area (mm) (mm!) ¿ 0 .8 0.5 Peak Spectral


    OCR Scan     		S4280 S5531 S4752 S5533 S4753 S4751 S5532 KSPDA0061EA KSPDA0062EA D003t S5532 PDF

    Untitled

    Abstract: No abstract text available
    Text: HAMAMATSU CÔRP ITE D • 452^01 0GG5532 A ■ GaAsP Photodiodes Photosensitive Surface Spectral Response Outlines Type No. Window Materials Package mm Size Effective Area Range Peak Wave­ length (mm) (mm2) (nm) (nm) Characteristics (25°C) Typical Radiant Sensitivity (A/W) Short Circuit Current


    OCR Scan     		0GG5532 560nm 633nm G1116 G1117 G1118 G1120 S1133, S1133-03, S1787 PDF

    S3407

    Abstract: No abstract text available
    Text: • 4 2 2 ^ 0 ^ 0DD31.22 T3A ■ HPKJ Silicon Photodiodes Visible/Visible to IR Range Dimensional CM ie Type No. (P.41-43V Window Material"1 S1087 Package Effective Area Size Active Area Spectral Response Photo Sensitivity S Typ. (A/W) Peak . Sensitivity


    OCR Scan     		0DD31 1-43V S1087 930nm 560nm 630nm S4011 S4160 S4160-01 S1133 S3407 PDF

    S2216 02

    Abstract: 54752 S1190-03
    Text: Replacement Devices For former devices not listed in this catalog, we recommend using the following replacement devices. These de­ vices are not 100 % compatible with the former devices in specifications including their package dimensions. Please consult us for more details.


    OCR Scan     		S2216-01 S2839 S2840 S1190 S1190-01 S1190-03 S4280 S4751 S5531 S5532 S2216 02 54752 PDF

    S1190-01

    Abstract: No abstract text available
    Text: MSaibtn G003b24 flOO • HPKJ PIN Silicon Photodiodes 1 Type No. Dimensional Outline (P.38)/ Window Material*1 S2216-01 S2839 /K Package O/K S1190-01 ® /L S1190-03 ® /K S1190-13 • /L ¿0.8 0.5 320 to 1060 900 0.57 0.55 ¿0.4 0.12 0.5 320 to 1000 800


    OCR Scan     		G003b24 S2839 S1190-01 S1190-13 S1190-03 S2840 S1190 S2216-01 633nm 930nm S1190-01 PDF

    vn10

    Abstract: 1X11 S2216-01
    Text: Si PIN Photodiodes 1 Type No. Dimensional Outline (P.40)/ W indow M ate ria l*' Package 0K 3-pin TO 18 ; ' h :h M 1'ID S 1 11 ?f J 111 O k K s i 1<jo n O /L Active Area Spectral Response Range (mm) (mm2) <fi 0.8 0.5 ip 0 .4 0.12 $ 0.8 0.5 (nm) Photo Sensitivity S (A/W) Typ. Short Circuit


    OCR Scan     		930nm 633nm S2216-01 Vn-10 S1190 vn10 1X11 PDF

    S3590-03

    Abstract: S1190-01 S4753 S1190-03 S4752 S4751 S2216-01 S2216 02 S2839 S5533
    Text: Replacement Devices For former devices not listed in this catalog, we recommend using the following replacement devices. These de­ vices are not 100 % compatible with the former devices in specifications including their package dimensions. Please consult us for more details.


    OCR Scan     		S2216-01 S2839 S2840 S1190 S1190-01 S1190-03 S4280 S4751 S4752 S4753 S3590-03 S2216 02 S5533 PDF

    S1190 hamamatsu

    Abstract: S1190-01 S1190-03 S2216-01 S2856 S1190 S1188-02 S2216-02 S2216 02 S2164-01
    Text: HAMAMATSU CORP 1TE D • 42STbGT OOGSSEfl L> PIN Silicon Photodiodes Photosensitive Surface Spectral Response Outlines Type No. Features Window Materials S1188-02 Ultra-high speed response Q /K S1188-06 S2216-01 Ultra-high speed response, low bias type O /K


    OCR Scan     		42STbGT S1188-02 S1188-06 S2216-01 S2216-02 S1190 S1190-01 S1190-03 S1190-04 S1223 S1190 hamamatsu S2856 S2216 02 S2164-01 PDF

    G1961-01

    Abstract: G1962-01 S1190 hamamatsu g1962 S1190-01 S1188-02 S2216 02 S2164 S2216-01 S1226-18BQ
    Text: HAMAMATSU liE CÔRP D • 422=^0=1 Q002S3ti S ■ T ^ 4 \ - S \ GaP Photodiodes Photosensitive surface Spectral Response Outline. Type No. Window Materials Package mm Size Effective Area Range Peak Wave­ length (mm) (mm2) (nm) (nm) 190-520 440+30 Characteristics (25°C)


    OCR Scan     		Q002S3ti 254nm 400nm G1961 G1962 G1963 G1961-01 G1962-01 S1087, S1087-03 S1190 hamamatsu S1190-01 S1188-02 S2216 02 S2164 S2216-01 S1226-18BQ PDF

    S2840

    Abstract: No abstract text available
    Text: • 4 2 2 ^ 0 "I 0003b5G TT2 ■ HPKJ Related Products PHOTOTRANSISTORS The phototransistor gives a large output current as compared to photodiodes. Hamamatsu supplies high-sensitivity phototransistors based on its long experience with opto-semiconductor technology.


    OCR Scan     		0003b5G S2829 S4404-01 S2041 S2042 KSPDA0061EA KSPDA0062EA D003t G2711-01 S2833-04, S2840 PDF

    Untitled

    Abstract: No abstract text available
    Text: 452'ïbGT 0G03b 30 004 HPK J PIN Silicon Photodiodes 4 Type No. S1223 Dimensional Outline (P.38-41)/ Window Material*1 Package /K TO-5 Active Area Size (mm) S1223-01 Short Photo Sensitivity S (A/W) Typ. Peak Spectral Circuit Response Sensitivity Current Isc


    OCR Scan     		0G03b S1223 660nm 780nm 830nm S1223-01 S3071 S1863-01 14mmTO-8 S3883 PDF