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    S1190 Search Results

    S1190 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    S1190 Bothhand Enterprise T1/CEPT/ISDN-PRI TRANSFORMER Original PDF
    S1190 Unknown The Optical Devices Data Book (Japanese) Scan PDF
    S1190-01 Unknown The Optical Devices Data Book (Japanese) Scan PDF
    S1190-03 Unknown The Optical Devices Data Book (Japanese) Scan PDF
    S1190-04 Unknown The Optical Devices Data Book (Japanese) Scan PDF
    S1190CS021 Pervasive Displays Development Boards, Kits, Programmers - Evaluation and Demonstration Boards and Kits - DEVELOPMENT KIT AURORA Original PDF

    S1190 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    diode s1 77

    Abstract: S124 diode s1 diode s1 74 socket s1 S1-100 S1-128
    Text: P1 TTL0 P1 D3 A1 TTL3 A2 TTL6 A3 TTL9 A4 D2 D1 D0 S1-118 S1-110 S1-103 S1-100 TTL1 TTL8 C3 B4 TTL11 C4 TTL13 C5 TTL15 C6 TTL16 C7 TTL17 C8 TTL19 C9 AGND C10 PVCC C11 TTL20 C12 TTL21 C13 TTL22 C14 TTL23 C15 TTL24 C16 TTL25 C17 PVCC C18 TTL26 C19 PVPP C20 TTL28


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    PDF S1-118 S1-110 S1-103 S1-100 S1-122 S1-127 TTL11 TTL13 TTL15 TTL16 diode s1 77 S124 diode s1 diode s1 74 socket s1 S1-100 S1-128

    D1650

    Abstract: data transistor d1650 d1650 transistor D1760 D1740 d1680 D1720 D1750 d1780 d1640
    Text: DEVICE STATE MACHINES HIPPI BiCMOS PECL CLOCKDEVICE GENERATOR S2020/S2021 SOURCE STATE MACHINES HIPPI APPLICATION NOTE S2020/S2021 SOURCE S2020 HIPPI SOURCE CONNECT CONTROL The S2020 Source Device meets the signalling protocol for the Hippi-Source as determined by ANSI X3.1831991 HiPPI-PH Mechanical Electrical and Signalling


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    PDF S2020/S2021 S2020 LLRC03 LLRC47 LLRC813 LLRC1419 D1650 data transistor d1650 d1650 transistor D1760 D1740 d1680 D1720 D1750 d1780 d1640

    HX8369

    Abstract: S1129 Himax 23 PIN TFT MOBILE DISPLAY HX5186-A
    Text: DOC No. HX8369-A00-DS HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver Version 02 October, 2010 HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver List of Contents October, 2010


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    PDF HX8369-A00-DS HX8369-A00 480RGB 285October, HX8369 S1129 Himax 23 PIN TFT MOBILE DISPLAY HX5186-A

    AP 1100 R1

    Abstract: S1190 S1190-01 S1190-03 S2216-01 S2840
    Text: PIN Silicon Photodiodes 1 Type No. Dimensional Outline (P.38)/ Window M aterial*1 Package 0 /K 3-pin TO-18 S2840 S1190 O /K S1190-01 L S1190-03 0 /K S1190-13 O /L (p 0.8 0.5 320 to 1060 900 0.57 0.55 jS0.4 0.12 ji 0.8 0.5 320 to 1000 800 0.5 0.32 Effective


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    PDF 633nm 930nm S2216-01 S2839 S2840 S1190 S1190-01 S1190-03 S1190-13 KPINB0049EA AP 1100 R1

    S1190 hamamatsu

    Abstract: s1188 S1190-04 S2216-02 Q422 S2216 02 S1223-01 S1190-03 S-2216-02
    Text: HAMAMATSU Pin CORP AT silicon Hnotoûioaes Q4229ßDJ9 HAMAMATSU CORP DE 89D Ò20Ò2 F eatures Window Materials S1188-02 U ltra-high speed response Q / K S1188-06 S 2216-01 U ltra-high speed response, low bias type Q /K S1190 High-speed response O'/K S 1 190-01


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    PDF Q4229 633nm 930nm S1188-02 S1188-06 S2506-01 S2336 S2337 S1190 hamamatsu s1188 S1190-04 S2216-02 Q422 S2216 02 S1223-01 S1190-03 S-2216-02

    S3407

    Abstract: S4036 S5533
    Text: Dimensional Outlines Unit : m m O S1226-18BQ, etc. 0 S1190-01, etc. 0 S2386-18L # 5 4 -0 2 WI NDOW iy o *o¿ ^ 4 PS > 0 j o 0 S5531, S5532, S5533 0 S2216-01, etc. O S1190-13 2 ^ r> 4 t ü i- 4 fih ‘ :i i V* 4 6>cj • 0 1 : o -cP -l: • > *'<i Y", 5 K 1 y jtj ¡Inirosiln . it«- ijl.iss!


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    PDF S1226-18BQ, S2386-18L S1190-01, S1190-13 S2216-01, S5531, S5532, S5533 S2381, S2382, S3407 S4036 S5533

    S1190-01

    Abstract: No abstract text available
    Text: MSaibtn G003b24 flOO • HPKJ PIN Silicon Photodiodes 1 Type No. Dimensional Outline (P.38)/ Window Material*1 S2216-01 S2839 /K Package O/K S1190-01 ® /L S1190-03 ® /K S1190-13 • /L ¿0.8 0.5 320 to 1060 900 0.57 0.55 ¿0.4 0.12 0.5 320 to 1000 800


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    PDF G003b24 S2839 S1190-01 S1190-13 S1190-03 S2840 S1190 S2216-01 633nm 930nm S1190-01

    S1337-33BR

    Abstract: s4160 S3407 S1227-66BQ S5107 8S02
    Text: Dimensional Outlines Unit : mm O S1226-18BQ etc. S2386-18L S1190-01 etc. COMMON TO CASE COMMON T O C AS E KSPDA0047EA O S1190-13 f ¿ 2 .5 + 0 .2 f 2.5 4 ± 0 .2 The w in dow protrudes 0.2m m Max. above the rim. K type borosilicale glass win dow protrudes 0.2mm Max.


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    PDF S1226-18BQ S2386-18L S1190-01 KSPDA0047EA S1190-13 S1226 G1116, G1736 S2386 S1336 S1337-33BR s4160 S3407 S1227-66BQ S5107 8S02

    S2858

    Abstract: S2551-01 S1190-03 S1723-06 14 pin photodiode s1188 S1190-04 AT82 S1723-04
    Text: PIN Silicon Photodiodes Type No. S1188-02 S1188-06 S 2216-01 S 2216-02 S2839 S2840 S1190 S1190-Q1 S1190-03 S1190-04 S1223 S1223-01 Package Effective Sensitive Area mm (mm) 3-pin TO-18 3-pin TO-18 3-pin TO-18 Radiant Sensitivity Peak Spectral Bp Wavelength


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    PDF S1188-02 S1188-06 S2839 S2840 S1190 S1190-Q1 S1190-03 S1190-04 S1223 S1223-01 S2858 S2551-01 S1723-06 14 pin photodiode s1188 AT82 S1723-04

    Untitled

    Abstract: No abstract text available
    Text: 0003b2fi HSt HPKJ PIN Silicon Photodiodes 3 Range Peak Sensitivity Wavelength À A p (nm) (nm) Spectral Dimensional Type No. Outline Package (P.42,43) Active Area Effective Size Active Area (mm) ( m m 2) 2.77X2.77 7.7 S2506-02 S2506-04 S4707-01 S5077


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    PDF 0003b2fi 633nm 930nm S2506-04 S2973 S3321 S4707-01 S5573 KSPDA0061EA KSPDA0062EA

    G1125-02

    Abstract: S2216 02 S1863 G1126-02
    Text: HAMAMATSU CORP ITE D • 422^0^ 00G2534 1 ■ GaAsP Photodiodes Photosensitive Surface Spectral Response Typical Radiant Sensitivity A/W Outlines Type No. Window Materials Characteristics (25°C) Package (mm) Size Effective Area Range Peak Wave­ length


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    PDF 00G2534 254nm 560nm 633nm G1125-02 G1126-02 G1127-02 G2119 G1745 G1746 S2216 02 S1863

    hamamatsu S875

    Abstract: S1190-01 S1188-02 S2387-16R 900nm LED S2506 S1190 hamamatsu S1721 S2216 02 Hamamatsu S1133
    Text: HAMAMATSU CORP n E Silicon Photodiodes Type No. D • ‘JHST b G ' i 0 0 G S S 24 Visible Light to IR, for Precision Photometry Photosensitive Surface Spectral Response Out­ line Package (mm) «J Characteristics (25°C) Radian Sensitivity (A/W) Size


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    PDF 560nm 633nm 930nm S2386 S2386-18K S1133-01, S1133-11, S1087-01, G1118, G1738 hamamatsu S875 S1190-01 S1188-02 S2387-16R 900nm LED S2506 S1190 hamamatsu S1721 S2216 02 Hamamatsu S1133

    C2719

    Abstract: S1190-01 s1223 pin photodiode S4160 equivalent s12271010b S4753 S3407-01 hamamatsu S1336 S4160 G1118
    Text: MHE'ìbCH 0 G03 b S l fi 3 T • HPKJ PHOTO ICs A photodiode and signal processing circuit are integrated. Photo ICs are intelligent light sensors consisting of a photodiode, signal processing circuit and signal output circuit. Molded in subminiature packages, these photo ICs are especially suited for


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    PDF S4282-11 S4285-40 S4810 KSPDA00060EA S2833 S2833-01 KSPDA0061EA KSPDA0062EA D003t G2711-01 C2719 S1190-01 s1223 pin photodiode S4160 equivalent s12271010b S4753 S3407-01 hamamatsu S1336 S4160 G1118

    P873-G35-552

    Abstract: p1760-04 P873-13
    Text: Opto-semiconductors CONDENSED CATALOG 1987 Hamamatsu Photonics Solid State Division has devel­ oped a variety of opto-electronic semiconductor de­ vices. These competitively priced high quality products are designed to meet the requirements of general and


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    PDF S-114 DK-2000 JAN/87 P873-G35-552 p1760-04 P873-13

    S5532

    Abstract: No abstract text available
    Text: GGG3bEb bfl3 • HPKJ PIN Silicon Photodiodes 2 Dimensional Outline Type No. Package Window Material* S4280 O /K S5531 O /L 3-pin T O -1 8 with lens S4752 O /K 3-pin T O -1 8 S4753 ^ S5533 * Effective Size Active Area (mm) (mm!) ¿ 0 .8 0.5 Peak Spectral


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    PDF S4280 S5531 S4752 S5533 S4753 S4751 S5532 KSPDA0061EA KSPDA0062EA D003t S5532

    S1723-06

    Abstract: S1722-01 S1190-01 PD46 BZZ16 S1223-01 s1188 S1723 S1723-04 S1723-08
    Text: - 260- m & i± 7t % II min \ ßA E mW cm2 IE % • ± ^ Bi -fit 1i Ei Üx5 vK v: ln max inA; Vk !V; iß ft 14 j. ly typ (nmi 'T„ = 25'C) i r „ = 25*C' t, typ i/£S) ft- öi 3% 7 Ra fsj n R,. iß! Vk iV; Cr typ ;pF' VK iV': VK (V) T., ff; i* T O -18


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    PDF S1188 S1188-06 PD-95 S2216-01 bzz16-02 TQ-18 S1190 S1190-01 S1723-06 S1722-01 S1190-01 PD46 BZZ16 S1223-01 S1723 S1723-04 S1723-08

    diode marking L5 sot363

    Abstract: VISHAY diode MARKING er VISHAY SOT LOT CODE marking L5 sot363 sot363 ON Marking DS vishay siliconix code marking
    Text: _ SM906DL Vishay Siliconix New Product N-Channel 20-V D-S MOSFET PRODUCT SUMMARY r DS<on) (Œ ) lD (mA) 2.0 9 V q s = 4.5 V 250 2.5 V GS = 2.5 V 150 V DS(V) 20 SOT-363 S C-70 (6*Leads) Marking Code XX £ Lot Traceability


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    PDF SM906DL OT-363 S-01885-- 28-Aug-00 S11906DL diode marking L5 sot363 VISHAY diode MARKING er VISHAY SOT LOT CODE marking L5 sot363 sot363 ON Marking DS vishay siliconix code marking

    15 1e75

    Abstract: 1E75 S1190-01 photocell
    Text: _~ "V229609 HAMAMATSU XQftP %: , > il D E ^ E S T t^ Q 0D 1E75 I Ham am atsu H1941 and H1940 are opto-hybrid ICs specially designed for transm ission or reflection-m ode photoelectric relays using infrared LEDs and PIN silicon photocells. The H1941 is a light-em itting hybrid


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    PDF V229609 H1941/H1940 H1941 H1940 L1915-01 T83-6-15 15 1e75 1E75 S1190-01 photocell

    Untitled

    Abstract: No abstract text available
    Text: HAMAMATSU CÔRP ITE D • 452^01 0GG5532 A ■ GaAsP Photodiodes Photosensitive Surface Spectral Response Outlines Type No. Window Materials Package mm Size Effective Area Range Peak Wave­ length (mm) (mm2) (nm) (nm) Characteristics (25°C) Typical Radiant Sensitivity (A/W) Short Circuit Current


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    PDF 0GG5532 560nm 633nm G1116 G1117 G1118 G1120 S1133, S1133-03, S1787

    S3407

    Abstract: No abstract text available
    Text: • 4 2 2 ^ 0 ^ 0DD31.22 T3A ■ HPKJ Silicon Photodiodes Visible/Visible to IR Range Dimensional CM ie Type No. (P.41-43V Window Material"1 S1087 Package Effective Area Size Active Area Spectral Response Photo Sensitivity S Typ. (A/W) Peak . Sensitivity


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    PDF 0DD31 1-43V S1087 930nm 560nm 630nm S4011 S4160 S4160-01 S1133 S3407

    S2216 02

    Abstract: 54752 S1190-03
    Text: Replacement Devices For former devices not listed in this catalog, we recommend using the following replacement devices. These de­ vices are not 100 % compatible with the former devices in specifications including their package dimensions. Please consult us for more details.


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    PDF S2216-01 S2839 S2840 S1190 S1190-01 S1190-03 S4280 S4751 S5531 S5532 S2216 02 54752

    vn10

    Abstract: 1X11 S2216-01
    Text: Si PIN Photodiodes 1 Type No. Dimensional Outline (P.40)/ W indow M ate ria l*' Package 0K 3-pin TO 18 ; ' h :h M 1'ID S 1 11 ?f J 111 O k K s i 1<jo n O /L Active Area Spectral Response Range (mm) (mm2) <fi 0.8 0.5 ip 0 .4 0.12 $ 0.8 0.5 (nm) Photo Sensitivity S (A/W) Typ. Short Circuit


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    PDF 930nm 633nm S2216-01 Vn-10 S1190 vn10 1X11

    S3590-03

    Abstract: S1190-01 S4753 S1190-03 S4752 S4751 S2216-01 S2216 02 S2839 S5533
    Text: Replacement Devices For former devices not listed in this catalog, we recommend using the following replacement devices. These de­ vices are not 100 % compatible with the former devices in specifications including their package dimensions. Please consult us for more details.


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    PDF S2216-01 S2839 S2840 S1190 S1190-01 S1190-03 S4280 S4751 S4752 S4753 S3590-03 S2216 02 S5533

    S1190 hamamatsu

    Abstract: S1190-01 S1190-03 S2216-01 S2856 S1190 S1188-02 S2216-02 S2216 02 S2164-01
    Text: HAMAMATSU CORP 1TE D • 42STbGT OOGSSEfl L> PIN Silicon Photodiodes Photosensitive Surface Spectral Response Outlines Type No. Features Window Materials S1188-02 Ultra-high speed response Q /K S1188-06 S2216-01 Ultra-high speed response, low bias type O /K


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    PDF 42STbGT S1188-02 S1188-06 S2216-01 S2216-02 S1190 S1190-01 S1190-03 S1190-04 S1223 S1190 hamamatsu S2856 S2216 02 S2164-01