s1409
Abstract: murata REEL label lot number SKY65050-372LF
Text: DATA SHEET SKY65050-372LF: 0.45-6.0 GHz Low Noise Transistor Applications • Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations • Test instrumentation • LNA for GPS receivers • Satellite receivers Figure 1. SKY65050-372LF Block Diagram
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SKY65050-372LF:
SC-70
J-STD-020)
SKY65050-372LF
200967D
s1409
murata REEL label lot number
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiS413DN www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C
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SiS413DN
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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SKY65050-372LF
Abstract: S1408 S1410 VT47 S1417
Text: DATA SHEET SKY65050-372LF: 0.45-6.0 GHz Low Noise Transistor Applications x Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations x Test instrumentation x LNA for GPS receivers x Satellite receivers Figure 1. SKY65050-372LF Block Diagram
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SKY65050-372LF:
SKY65050-372LF
200967E
S1408
S1410
VT47
S1417
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G 1754 diode
Abstract: No abstract text available
Text: SPICE Device Model Si4434DY www.vishay.com Vishay Siliconix N-Channel 250 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C
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Original
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Si4434DY
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
G 1754 diode
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HX8369
Abstract: S1129 Himax 23 PIN TFT MOBILE DISPLAY HX5186-A
Text: DOC No. HX8369-A00-DS HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver Version 02 October, 2010 HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver List of Contents October, 2010
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HX8369-A00-DS
HX8369-A00
480RGB
285October,
HX8369
S1129
Himax
23 PIN TFT MOBILE DISPLAY
HX5186-A
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PDF
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Untitled
Abstract: No abstract text available
Text: SiC620, SiC620A www.vishay.com Vishay Siliconix 60 A VRPower Integrated Power Stage DESCRIPTION FEATURES The SiC620 and SiC620A are integrated power stage solutions optimized for synchronous buck applications to offer high current, high efficiency, and high power density
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SiC620,
SiC620A
SiC620
MLP55-31L
2002/95/EC.
2002/95/EC
2011/65/EU.
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SKY65052-372LF
Abstract: S1509 VT47 GRM015 S1408 S1511 S1417 GRM01
Text: PRELIMINARY DATA SHEET SKY65052-372LF: 0.45-6.0 GHz Low Noise Transistor Applications • Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations • Test instrumentation • LNA for GPS receivers • Satellite receivers Figure 1. SKY65052-372LF Block Diagram
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Original
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SKY65052-372LF:
SKY65052-372LF
01088A
S1509
VT47
GRM015
S1408
S1511
S1417
GRM01
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schematic diagram receiver satellite
Abstract: SKY65050-372LF murata REEL label RF TRANSISTOR 2.5 GHZ s parameter S1410 sc-70 package pcb layout schematics power supply satellite receiver VT47 S1408 transistor c9
Text: DATA SHEET SKY65050-372LF: 0.45-6.0 GHz Low Noise Transistor Applications x Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations x Test instrumentation x LNA for GPS receivers x Satellite receivers Figure 1. SKY65050-372LF Block Diagram
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Original
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SKY65050-372LF:
SKY65050-372LF
200967F
schematic diagram receiver satellite
murata REEL label
RF TRANSISTOR 2.5 GHZ s parameter
S1410
sc-70 package pcb layout
schematics power supply satellite receiver
VT47
S1408
transistor c9
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SUP53P06-20 www.vishay.com Vishay Siliconix P-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C
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Original
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SUP53P06-20
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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MDM 6600
Abstract: mt 1389 de 2061 D nikko AR9344 bosch AL 1115 CV denso alternator 7805/3A bosch al 1450 dv CATERPILLAR 207-1560 ba 4918
Text: No. 9800-OERF-007 Replaces • Remplace • Substituye No. 9800-OERF-005 Dixie Electric Ltd. OEM CROSS REFERENCE GUIDE DE RÉFÉRENCE GUÍA DE REFERENCIA 2007 Index • Índice AGCO .1
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9800-OERF-007
9800-OERF-005
MDM 6600
mt 1389 de
2061 D nikko
AR9344
bosch AL 1115 CV
denso alternator
7805/3A
bosch al 1450 dv
CATERPILLAR 207-1560
ba 4918
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Untitled
Abstract: No abstract text available
Text: SiP32101, SiP32102 www.vishay.com Vishay Siliconix 6.5 mΩ, Bi-Directional Battery Switch in Compact WCSP DESCRIPTION FEATURES The SiP32101 and SiP32102 bidirectional switches feature reverse blocking capability to isolate the battery from the system. The internal switch has an ultra-low 6.5 mΩ
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SiP32101
SiP32102
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SUP90P06-09L www.vishay.com Vishay Siliconix P-Channel 60 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C
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Original
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SUP90P06-09L
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SUP90N04-3m3P www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C
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SUP90N04-3m3P
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si7846DP www.vishay.com Vishay Siliconix N-Channel 150 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C
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Si7846DP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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SKY65050-372LF
Abstract: No abstract text available
Text: DATA SHEET SKY65050-372LF: 0.45-6.0 GHz Low Noise Transistor Applications • Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations Test instrumentation LNA for GPS receivers Satellite receivers Figure 1. SKY65050-372LF Block Diagram
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Original
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SKY65050-372LF:
SC-70
J-STD-020)
SKY65050-372LF
200967E
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PDF
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SUD20N10-66L www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C
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Original
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SUD20N10-66L
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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NL-4823
Abstract: semelec CHEROKEE INTERNATIONAL sunbank corp pr ste 1205 G Samsung Praha SRI Rev 1_0
Text: Fairchild Semiconductor World Wide Sales Offices AMERICAS MEXICO Fairchild Semiconductor Av. Vallarta #6503 Flr. 14 Col. Cd Granjas Zapopan Jalisco 45010 Mexico Tel: 52-3-1100017 Fax: 52-3-1101878 TEXAS Customer Response Center Fairchild Semiconductor 222 West Las Colinas Blvd., Ste. 380
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1-04-00A
NL-4823
semelec
CHEROKEE INTERNATIONAL
sunbank corp
pr ste 1205 G
Samsung Praha SRI Rev 1_0
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lm 8446
Abstract: FIN-02231 IR-58001 mt 6680 76S722333
Text: SAMSUNG SEMICONDUCTOR SALES OFFICE-U.SA Northwest North Central Northeast 3655 North First Street San Jose, CA 95134 TEL: 408-544-4000 FAX : 408-544-4934 1111 Ptaza Drive, Suite 100 Schaumburg, IL 60173 TEL : 847-969-9515 FAX : 847-969-9509 238 Littleton Road. Suite 201
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1258Kurobon-Dong
lm 8446
FIN-02231
IR-58001
mt 6680
76S722333
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W157
Abstract: mn 6912 bc 5578 Nanjing Micro One Electronics
Text: SAMSUNG SEMICONDUCTOR SALES OFFICE-U.SA Northwest North Central Northeast 3655 North First Street San Jose, CA 95134 TEL : 408-954-7000 FAX : 408-954-7883 300 Park Boulevard, Suite #210 Itasca, IL 60143-2636 TEL : 630-775-1050 FAX : 630-775-1058 238 Littleton Rd. Suite 201
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026135
Abstract: eltron Nanjing Micro One Electronics
Text: SAMSUNG SEMICONDUCTOR SALES OFFICE-U.S.A. Northwest North Central Northeast 3655 North First Street San Jose, CA95134 TEL : 408-544-4000 FAX : 408-544-4934 1111 Plaza Drive, Suite 100 Schaumburg, IL 60173 TEL: 847-969-9515 FAX : 847-969-9509 238 Littleton Road. Suite 201
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CA95134
026135
eltron
Nanjing Micro One Electronics
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PDF
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STR 6765
Abstract: kona 132 ir58 a1876 elmwood 3100 CA92123 Viking Tech Corporation b2800 CZ-186-00
Text: SAMSUNG SEMICONDUCTOR SALES OFFICE-U.S.A. Northwest North Central Northeast 3655 North First Street San Jose, CA 95134 TEL : 408-954-7000 FAX : 408-954-7883 300 Park Boulevard, Suite #210 Itasca, IL 60143-2636 TEL: 630-775-1050 FAX : 630-775-1058 238 Littleton Rd. Suite 201
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S8534-5
STR 6765
kona 132
ir58
a1876
elmwood 3100
CA92123
Viking Tech Corporation
b2800
CZ-186-00
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PDF
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Nanjing Micro One Electronics
Abstract: 186642
Text: SAMSUNG SEMICONDUCTOR SALES OFFICE-U.S.A. Northwest North Central Northeast 3655 North First Street San Jose, CA 95134 TEL: 408-544-4000 FAX : 408-544-4934 1111 Ptaza Drive, Suite 100 Schaumburg, IL 60173 TEL: 847-969-9515 FAX: 847-969-9509 238 Littleton Road. Suite 201
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OCR Scan
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ta 8446 cp
Abstract: OVERLAND IC 741 cn utah g 12 r
Text: SAMSUNG SEMICONDUCTOR SALES OFFICE-U.S.A. Northwest North Central Northeast 3655 North First Street San Jose, CA 95134 TEL : 408-544-4000 FAX : 408-544-4934 1111 Plaza Drive, Suite 100 Schaumburg, IL 60173 TEL: 847-969-9515 FAX: 847-969-9509 238 Littleton Road. Suite 201
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35TEL
ta 8446 cp
OVERLAND
IC 741 cn
utah g 12 r
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PDF
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STR 6765
Abstract: 44202 TEL 721 TEL721
Text: SAMSUNG SEMICONDUCTOR SALES OFFICE-U.S.A. Northwest North Central Northeast 3655 North First Street San Jose, CA95134 TEL : 408-954-7000 FAX : 408-954-7883 300 Park Boulevard, Suite #210 Itasca, IL 60143-2636 TEL: 630-775-1050 FAX: 630-775-1058 238 Littleton Fid. Suite 201
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OCR Scan
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CA95134
Su34-5
STR 6765
44202
TEL 721
TEL721
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PDF
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