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    SIS413DN Price and Stock

    Vishay Siliconix SIS413DN-T1-GE3

    MOSFET P-CH 30V 18A PPAK 1212-8
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    DigiKey SIS413DN-T1-GE3 Digi-Reel 22,823 1
    • 1 $0.95
    • 10 $0.594
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    • 1000 $0.26866
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    SIS413DN-T1-GE3 Cut Tape 22,823 1
    • 1 $0.95
    • 10 $0.594
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    • 1000 $0.26866
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    SIS413DN-T1-GE3 Reel 21,000 3,000
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    RS SIS413DN-T1-GE3 Bulk 3,000
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    Vishay Intertechnologies SIS413DN-T1-GE3

    Transistor MOSFET P-CH 30V 18A 8-Pin PowerPAK 1212 - Tape and Reel (Alt: SIS413DN-T1-GE3)
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    Avnet Americas SIS413DN-T1-GE3 Reel 120,000 8 Weeks 3,000
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    Mouser Electronics SIS413DN-T1-GE3 60,099
    • 1 $0.63
    • 10 $0.447
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    Verical SIS413DN-T1-GE3 18,000 3,000
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    SIS413DN-T1-GE3 3,000 3,000
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    Arrow Electronics SIS413DN-T1-GE3 18,000 8 Weeks 3,000
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    SIS413DN-T1-GE3 3,000 8 Weeks 3,000
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    Newark SIS413DN-T1-GE3 Reel 168,000 3,000
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    SIS413DN-T1-GE3 Reel 3,000
    • 1 $0.264
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    • 10000 $0.239
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    SIS413DN-T1-GE3 Cut Tape 3,000
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    Bristol Electronics SIS413DN-T1-GE3 18,220
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    TME SIS413DN-T1-GE3 2,602 1
    • 1 $0.515
    • 10 $0.453
    • 100 $0.309
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    Chip 1 Exchange SIS413DN-T1-GE3 3,900
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    Avnet Asia SIS413DN-T1-GE3 10 Weeks 3,000
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    EBV Elektronik SIS413DN-T1-GE3 9 Weeks 3,000
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    Wuhan P&S SIS413DN-T1-GE3 3,000 1
    • 1 $2.58
    • 10 $2.58
    • 100 $0.86
    • 1000 $0.78
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    Vishay Huntington SIS413DN-T1-GE3

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    NexGen Digital SIS413DN-T1-GE3 21,000
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    Win Source Electronics SIS413DN-T1-GE3 33,300
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    SIS413DN Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIS413DN-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 18A PPAK 1212-8 Original PDF

    SIS413DN Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiS413DN www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		SiS413DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiS413DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.0094 at VGS = - 10 V - 18d 0.0132 at VGS = - 4.5 V - 18d • TrenchFET Power MOSFET • 100% Rg and UIS Tested • Material categorization:


    Original     		SiS413DN SiS413DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiS413DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.0094 at VGS = - 10 V - 18d 0.0132 at VGS = - 4.5 V - 18d • TrenchFET Power MOSFET • 100% Rg and UIS Tested • Material categorization:


    Original     		SiS413DN SiS413DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF