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    SI4434DY Search Results

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    SI4434DY Price and Stock

    Vishay Siliconix SI4434DY-T1-GE3

    MOSFET N-CH 250V 2.1A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4434DY-T1-GE3 Reel 15,000 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.25091
    		Buy Now
    SI4434DY-T1-GE3 Cut Tape 2,002 1
    • 1 $2.88
    • 10 $2.394
    • 100 $1.9057
    • 1000 $1.36819
    • 10000 $1.36819
    		Buy Now
    SI4434DY-T1-GE3 Digi-Reel 1
    • 1 $2.88
    • 10 $2.394
    • 100 $1.9057
    • 1000 $1.36819
    • 10000 $1.36819
    		Buy Now
    New Advantage Corporation SI4434DY-T1-GE3 10,000 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.29
    		Buy Now

    Vishay Siliconix SI4434DY-T1-E3

    MOSFET N-CH 250V 2.1A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4434DY-T1-E3 Reel 7,500 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.25091
    		Buy Now
    SI4434DY-T1-E3 Cut Tape 1,310 1
    • 1 $2.88
    • 10 $2.394
    • 100 $1.9057
    • 1000 $1.36819
    • 10000 $1.36819
    		Buy Now
    SI4434DY-T1-E3 Digi-Reel 1
    • 1 $2.88
    • 10 $2.394
    • 100 $1.9057
    • 1000 $1.36819
    • 10000 $1.36819
    		Buy Now

    Vishay Intertechnologies SI4434DY-T1-GE3

    Trans MOSFET N-CH 250V 2.1A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4434DY-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI4434DY-T1-GE3 Reel 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.70868
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    TTI SI4434DY-T1-GE3 Reel 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.07
    		Buy Now
    EBV Elektronik SI4434DY-T1-GE3 10 Weeks 2,500
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    Vishay Intertechnologies SI4434DY-T1-E3

    Trans MOSFET N-CH 250V 2.1A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4434DY-T1-E3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI4434DY-T1-E3 Reel 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.553
    		Buy Now
    SI4434DY-T1-E3 Reel 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.553
    		Buy Now
    Bristol Electronics SI4434DY-T1-E3 1,039
    • 1 -
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    TTI SI4434DY-T1-E3 Reel 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.39
    		Buy Now
    Chip1Stop SI4434DY-T1-E3 Cut Tape 500
    • 1 $1.17
    • 10 $1.16
    • 100 $1.15
    • 1000 $1.15
    • 10000 $1.15
    		Buy Now
    EBV Elektronik SI4434DY-T1-E3 10 Weeks 2,500
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    SI4434DY Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI4434DY Vishay Siliconix N-Channel 250-V (D-S) MOSFET Original PDF
    Si4434DY-E3 Vishay Siliconix N-Channel 250-V (D-S) MOSFET Original PDF
    SI4434DY-RC Vishay Siliconix R-C Thermal Model Parameters Original PDF
    Si4434DY SPICE Device Model Vishay N-Channel 250-V (D-S) MOSFET Original PDF
    Si4434DY-T1-E3 Vishay Siliconix N-Channel 250-V (D-S) MOSFET Original PDF
    SI4434DY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 2.1A 8-SOIC Original PDF
    SI4434DY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 2.1A 8-SOIC Original PDF

    SI4434DY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4434DY Vishay Siliconix N-Channel 250-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 250 ID (A) 0.155 at VGS = 10 V 3.0 0.162 at VGS = 6.0 V 2.9 • PWM-Optimized TrenchFET Power MOSFET • 100 % Rg Tested • Avalanche Tested


    Original     		PDF Si4434DY Si4434DY-T1-E3 18-Jul-08

    Si4434DY

    Abstract: Si4434DY-T1-E3 Si4434DY-T1-GE3
    Text: Si4434DY Vishay Siliconix N-Channel 250-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RrDS(on) (Ω) 250 ID (A) 0.155 at VGS = 10 V 3.0 0.162 at VGS = 6.0 V 2.9 • Halogen-free According to IEC 61249-2-21 Definition • PWM-Optimized TrenchFET Power MOSFET


    Original     		PDF Si4434DY Si4434DY-T1-E3 Si4434DY-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si4434DY Vishay Siliconix N-Channel 250-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RrDS(on) (Ω) 250 ID (A) 0.155 at VGS = 10 V 3.0 0.162 at VGS = 6.0 V 2.9 • Halogen-free According to IEC 61249-2-21 Definition • PWM-Optimized TrenchFET Power MOSFET


    Original     		PDF Si4434DY Si4434DY-T1-E3 Si4434DY-T1-GE3 11-Mar-11

    72562

    Abstract: No abstract text available
    Text: Si4434DY Vishay Siliconix New Product N-Channel 250-V D-S MOSFET FEATURES D PWM-OptimizedTrenchFETr Power MOSFET D 100% Rg Tested D Avalanche Tested PRODUCT SUMMARY VDS (V) 250 rDS(on) (W) ID (A) 0.155 @ VGS = 10 V 3.0 0.162 @ VGS = 6.0 V 2.9 APPLICATIONS


    Original     		PDF Si4434DY Si4434DY-T1 S-32407--Rev. 24-Nov-03 72562

    G 1754 diode

    Abstract: No abstract text available
    Text: SPICE Device Model Si4434DY www.vishay.com Vishay Siliconix N-Channel 250 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF Si4434DY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 G 1754 diode

    Si4434DY

    Abstract: Si4434DY-T1 72562
    Text: Si4434DY Vishay Siliconix New Product N-Channel 250-V D-S MOSFET FEATURES D PWM-OptimizedTrenchFETr Power MOSFET D 100% Rg Tested D Avalanche Tested PRODUCT SUMMARY VDS (V) 250 rDS(on) (W) ID (A) 0.155 @ VGS = 10 V 3.0 0.162 @ VGS = 6.0 V 2.9 APPLICATIONS


    Original     		PDF Si4434DY Si4434DY--E3 Si4434DY-T1--E3 S-32556--Rev. 15-Dec-03 Si4434DY-T1 72562

    Untitled

    Abstract: No abstract text available
    Text: Si4434DY Vishay Siliconix N-Channel 250-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RrDS(on) (Ω) 250 ID (A) 0.155 at VGS = 10 V 3.0 0.162 at VGS = 6.0 V 2.9 • Halogen-free According to IEC 61249-2-21 Definition • PWM-Optimized TrenchFET Power MOSFET


    Original     		PDF Si4434DY Si4434DY-T1-E3 Si4434DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si4434DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4434DY Vishay Siliconix N-Channel 250-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4434DY S-51095Rev. 13-Jun-05

    Untitled

    Abstract: No abstract text available
    Text: Si4434DY Vishay Siliconix N-Channel 250-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RrDS(on) (Ω) 250 ID (A) 0.155 at VGS = 10 V 3.0 0.162 at VGS = 6.0 V 2.9 • Halogen-free According to IEC 61249-2-21 Definition • PWM-Optimized TrenchFET Power MOSFET


    Original     		PDF Si4434DY Si4434DY-T1-E3 Si4434DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si4434DY_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF Si4434DY AN609, 0287m 0825m 8943m 5330m 7938m 9560m 8193m 15-Aug-14

    74096

    Abstract: AN609 Si4434DY
    Text: Si4434DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4434DY AN609 31-Aug-05 74096

    Untitled

    Abstract: No abstract text available
    Text: Si4434DY Vishay Siliconix N-Channel 250-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RrDS(on) (Ω) 250 ID (A) 0.155 at VGS = 10 V 3.0 0.162 at VGS = 6.0 V 2.9 • Halogen-free According to IEC 61249-2-21 Definition • PWM-Optimized TrenchFET Power MOSFET


    Original     		PDF Si4434DY Si4434DY-T1-E3 Si4434DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si4434DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4434DY Vishay Siliconix N-Channel 250-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4434DY 0-to-10V 29-Oct-03

    Untitled

    Abstract: No abstract text available
    Text: Si4434DY Vishay Siliconix New Product N-Channel 250-V D-S MOSFET FEATURES D PWM-OptimizedTrenchFETr Power MOSFET D 100% Rg Tested D Avalanche Tested PRODUCT SUMMARY VDS (V) 250 rDS(on) (W) ID (A) 0.155 @ VGS = 10 V 3.0 0.162 @ VGS = 6.0 V 2.9 APPLICATIONS


    Original     		PDF Si4434DY Si4434DY--E3 Si4434DY-T1--E3 08-Apr-05

    Si4434DY

    Abstract: Si4434DY-T1-E3 V1506
    Text: New Product Si4434DY Vishay Siliconix N-Channel 250-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 250 ID (A) 0.155 at VGS = 10 V 3.0 0.162 at VGS = 6.0 V 2.9 • PWM-Optimized TrenchFET Power MOSFET • 100 % Rg Tested • Avalanche Tested


    Original     		PDF Si4434DY Si4434DY-T1-E3 08-Apr-05 V1506

    BS250KL-TR1-E3

    Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
    Text: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8


    Original     		PDF SI3865BDV-T1-E3CT-ND SI4720CY-T1-E3CT-ND SI6924AEDQ-T1-E3CT-ND SI1040X-T1-E3TR-ND SI1865DL-T1-E3TR-ND SI1869DH-T1-E3TR-ND SI3861BDV-T1-E3TR-ND SI3865BDV-T1-E3TR-ND SI4720CY-T1-E3TR-ND SI6924AEDQ-T1-E3TR-ND BS250KL-TR1-E3 si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    q406 transistor

    Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
    Text: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original     		PDF SiP41109 SiP41110 SiP41111 75/2A q406 transistor SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


    Original     		PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477

    gs 069

    Abstract: PowerPACK 1212-8 Si4946BEY Si2314EDS SI4430BDY tsop6 marking 345 TN2404K 1206-8 chipfet layout Si4630DY SUM110N04-04
    Text: N-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original     		PDF SC-75 SC-75A SC-89 gs 069 PowerPACK 1212-8 Si4946BEY Si2314EDS SI4430BDY tsop6 marking 345 TN2404K 1206-8 chipfet layout Si4630DY SUM110N04-04