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    7C4096

    Abstract: AS7C34096 AS7C4096 5hbs AA344
    Text: H igh Perform ance S12KX8 CMOS SRAM AS7C4096 A S7C 34096 1 5 1 2 K X 8 C M O S SR A M P relim inary inform ation SRAM Features • O rg a n iz a tio n : 5 2 4 ,2 8 8 w o rd s x 8 bits • H ig h sp e ed Easy m e m o ry e x p a n s io n w ith CE, OE in p u ts


    OCR Scan     		PDF 512KX8 AS7C4096 AS7C34096 36-pin AS7C4096 AS7C4096-20JC AS7C34096-20JC 7C4096 AS7C34096 5hbs AA344

    Untitled

    Abstract: No abstract text available
    Text: H igh Perform ance S12KX8 SV CMOS Flash EEPROM « A S29F040 II II 512K X 8 CMOS Flash EEPROM Preliminary information Features • Low power consumption • Organization: 512Kx8 • Sector architecture - 30 mA m axim um read current - 60 mA m ax im u m program current


    OCR Scan     		PDF S12KX8 S29F040 512Kx8 32-pin 29F040-70L AS29F040-70L 29F040-90L S29F040-120L AS29F040

    KM684000BLP-71

    Abstract: KM684000BLG-5L KM6840006LP-5 A13Q KM684000BLG-7L km684000blt KM684000BLP5L
    Text: KM684000B Family CMOS SRAM S12Kx8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION • • • • • . The KM684000B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family supports various operating temperature ranges and various package


    OCR Scan     		PDF KM684000B S12Kx8 32-DIP-600 32-SOP-52S, 32-TSOP2-400F/R KM684000BL KM684000BL-L KM684000BLI KM684000BLP-71 KM684000BLG-5L KM6840006LP-5 A13Q KM684000BLG-7L km684000blt KM684000BLP5L

    ed18f8512

    Abstract: ED18F8512C7066C
    Text: ^EDI EDI8F8512C S12Kx8 Static Ram ELECTRONIC QESKSN& MC 512Kx8 Static RAM CMOS, Module Features 512Kx8 bit CMOS Static Random Access Memory • Access Times 20 thru 100ns • Data Retention Function EDI8F8512LP • TTL Compatible Inputs and Outputs • Fully Static, No Clocks


    OCR Scan     		PDF EDI8F8512C S12Kx8 512Kx8 100ns EDI8F8512LP) 70-100ns) 20-35ns) 4096K ed18f8512 ED18F8512C7066C

    CC650

    Abstract: H1-200-5
    Text: EDI68512C ZEDi 4 Megabit 512Kx8 UV Erasable CMOS EPROM aECTOONC Dessus. NC. Advanced 4 Megabit(512Kx8) UVErasable CMOS EEPROM Features Fast Read Access Time - 70ns The EDI68512C chip is a low-power, high performance, 4,194,304-bit ultraviolet erasable programmable read


    OCR Scan     		PDF 200mA 100ns/byte EDI68512C 512Kx8) EDI68512C 304-bit 512Kx8 EDI68612rature EDI68512C70LI CC650 H1-200-5

    dram zip 256kx16

    Abstract: No abstract text available
    Text: INDEX GENERAL PRO D U CT INFORM ATION Dense-Pac Memory Module and Monolithic . 4 Emerging Technology / P r o d u c t s . 5


    OCR Scan     		PDF DPS1MS16P/XP 150ns, DPS512S8H4 DPS512S8P/Pt/PLL DPS512S8Ü DPS256X24P DPS256S32W DPS256X32L/W 512Kx16, 256Kx32 dram zip 256kx16

    KM736V789T-60

    Abstract: 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L
    Text: MEMORY tCs FUNCTION GUIDE 1. SRAM PRODUCT TREE 1.1.1. Low Power 5.0V Operation SRAM 256Kb» 32KX8 KM62256CI-5/5L KM622S6CL-7/7L KM62256CLE -7/71 KM62256CLI-7/7L KM62256DL-5/5L KM62256DL-7/7L KM62256DLI-7/7L 512Kb» KM68512AL-5/5L 64Kx8 KM88512AL-7/7L KM68S»2ALf-7/7L


    OCR Scan     		PDF 256Kb» 32KX8 KM62256CI-5/5L KM62256CLE KM62256CLI-7/7L KM62256DL-5/5L KM62256DLI-7/7L 512Kb» 64Kx8 KM68512AL-5/5L KM736V789T-60 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L

    MT8088

    Abstract: No abstract text available
    Text: PRELIMINARY M ir ^ n O M * MT8D88C132VH/432VH S , MT16D88C232VH/832VH (S) 4MB, 8MB, 16MB, 32MB DRAM CARDS DRAM MINICARD 4,8,16,32 m e g a b y t e s 1 MEG, 2 MEG, 4 MEG, 8 MEG x 32; 3.3V FAST PAGE MODE, OPTIONAL SELF REFRESH • • • • • • • •


    OCR Scan     		PDF MT8D88C132VH/432VH MT16D88C232VH/832VH 88-pin MT16D88C232VH/832VH MT8D8SC132VH 432VH WT16088C23 VH832VH MT8088

    Untitled

    Abstract: No abstract text available
    Text: ! 4x512Kx32 5V FLASH SIM M PRELIMINARY* FEATURES • ■ ■ 100,000 Erase/Program Cycles A cce ss Time of 90ns Packaging: ■ Organized a s four banks of 512Kx32 • 80-pin S I M M ■ Commercial Temperature Range • The module is manufactured w ith sixteen 512Kx8 C M O S


    OCR Scan     		PDF 4x512Kx32 80-pin 512Kx32 29F040 512Kx8

    SRAM 64KX8 5V

    Abstract: No abstract text available
    Text: A Product Guide "641 Ali densities is bits TÎÎT 256K- —I.8V /2.S V /3.3V — 64KX16 ! -3.3V 32ÏX 8 asynchronous asynchronous in x: 8Kx8 I 32KX8 64KX8 32KX16 128KX8 I j!28gxl6| 64KX16 64KX8 128KX8 64KXJ6 32XX16 -3.3V 32KX32 synchronous Memories- -ED O


    OCR Scan     		PDF 256K- 128KX8 64KX16 64KX8 32KX16 32KX8 128KX8 28gxl6| SRAM 64KX8 5V

    AS4C1M16FS

    Abstract: 1Mx16 flash 3.3v 1Mx8 SRAM
    Text: Product number AS29F002 256Kx8 5V boot sector Flash. 433 AS7C181024LL 128Kx8 1,8V Intelliwatt SRAM. 129 j4S29F03 0 128KX8 SV equal sector Flash. 423


    OCR Scan     		PDF AS29F002 j4S29F03 AS29F040 AS29F080 AS29F200 AS29F400 AS291X008 AS29LL800 AS29LV002 AS29LV008 AS4C1M16FS 1Mx16 flash 3.3v 1Mx8 SRAM

    Untitled

    Abstract: No abstract text available
    Text: 512K X 32 FLASH MODULE molate PUMA 2F16000-15/20/25 Issue 1.0 : March 1992 ADVANCE PRODUCT INFORMATION S e m ic o n d u c t o r In c . 16,777,216 bit CMOS FLASH Memory Module Pin Definition Features User Configurable as 32 /1 6 / 8 bit wide. Operating Power


    OCR Scan     		PDF 2F16000-15/20/25 10fis MIL-STD883 16Mbit,

    ebe switches

    Abstract: 34-PIN DS1647 DS1647-12
    Text: D S 1647/D S1647LPM P R E L IM IN A R Y DALLAS SEMICONDUCTOR DS1647/DS1647LPM Nonvolatile Timekeeping RAM FEATURES PIN ASSIGNMENT A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND • Integrated NV SRAM, real time clock, crystal, power­ fu l control circuit and lithium energy source


    OCR Scan     		PDF DS1647/DS1647LPM 68-pin 2blH13D DS1647LPM 34-PIN 34P-SMT-3 ebe switches DS1647 DS1647-12

    Untitled

    Abstract: No abstract text available
    Text: EDI88512C ^aecTROac E œseN& D NC I 512Kx8 Static Ram 512Kx8 Static RAM CMOS, Monolithic Features 512Kx8 bit CMOS Static Random Access Memory • Access Times: 55,70,85 and 100ns • Data Retention Function LP version • TTL Compatible Inputs and Outputs


    OCR Scan     		PDF 512Kx8 EDI88512C 100ns EDI88512C EDI8M8512C. EDI88128C. EDI88512C100CB

    trc 9500

    Abstract: No abstract text available
    Text: EDI8F8513C m o I, ELÉC1R0MC DE9CNS. H C 512KxSStatic Ram 512Kx8StaticRAM CMOS, Module F e a tu r e s The EDI8F8513C is a 4096K bit CMOS Static RAM based on four 128Kx8 or Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate. Functional equivalence to the monolithic four megabit Static


    OCR Scan     		PDF EDI8F8513C 512KxSStatic 512Kx8StaticRAM 512Kx8 EDI8F8513C 4096K 128Kx8 the128Kx8 EDI8F8513B25M6C EDI8F8513B35M6C trc 9500