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    29F040 Price and Stock

    ARCOTEK MX29F040QC-90

    FLASH NOR 4MB 5V 32-PINPLCC 90ns
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    DigiKey MX29F040QC-90 Tube 40,996 480
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    Macronix International Co Ltd MX29F040CTI-70G

    IC FLASH 4MBIT PARALLEL 32TSOP
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    DigiKey MX29F040CTI-70G Tray 3,471 1
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    Avnet Americas MX29F040CTI-70G Reel 12 Weeks 1,500
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    MX29F040CTI-70G Tray 12 Weeks 1,560
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    New Advantage Corporation MX29F040CTI-70G 13,104 1
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    Micron Technology Inc M29F040B90N1

    IC FLASH 4MBIT PARALLEL 32TSOP
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    Micron Technology Inc M29F040B90N6

    IC FLASH 4MBIT PARALLEL 32TSOP
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    DigiKey M29F040B90N6 Tray
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    Micron Technology Inc M29F040B70K1

    IC FLASH 4MBIT PARALLEL 32PLCC
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    29F040 Datasheets (23)

    Part ECAD Model Manufacturer Description Curated Type PDF
    29F040 Advanced Micro Devices 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory Original PDF
    29F040 STMicroelectronics 4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory Original PDF
    29F040 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
    29F040 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
    29F040-12AC Winbond Electronics 4 MEGABIT (512K x 8) 5 VOLT SECTOR ERASE CMOS FLASH MEMORY Original PDF
    29F040-12AI Winbond Electronics 4 MEGABIT (512K x 8) 5 VOLT SECTOR ERASE CMOS FLASH MEMORY Original PDF
    29F040-12NC Winbond Electronics 4 MEGABIT (512K x 8) 5 VOLT SECTOR ERASE CMOS FLASH MEMORY Original PDF
    29F040-12NI Winbond Electronics 4 MEGABIT (512K x 8) 5 VOLT SECTOR ERASE CMOS FLASH MEMORY Original PDF
    29F040-12TC Winbond Electronics 4 MEGABIT (512K x 8) 5 VOLT SECTOR ERASE CMOS FLASH MEMORY Original PDF
    29F040-12TI Winbond Electronics 4 MEGABIT (512K x 8) 5 VOLT SECTOR ERASE CMOS FLASH MEMORY Original PDF
    29F0408 Maxwell Technologies 32 Megabit (4M x 8-Bit) Flash Memory Original PDF
    29F0408RP Maxwell Technologies FLASH MEMORY Original PDF
    29F0408RPFB Maxwell Technologies 32 Megabit (4M x 8-bit) flash memory Original PDF
    29F0408RPFE Maxwell Technologies 32 Megabit (4M x 8-bit) flash memory Original PDF
    29F0408RPFI Maxwell Technologies 32 Megabit (4M x 8-bit) flash memory Original PDF
    29F0408RPFP Maxwell Technologies Flash, 32 Mbit High Performance Flash Memory Original PDF
    29F0408RPFS Maxwell Technologies 32 Megabit (4M x 8-bit) flash memory Original PDF
    29F040-90AC Winbond Electronics 4 MEGABIT (512K x 8) 5 VOLT SECTOR ERASE CMOS FLASH MEMORY Original PDF
    29F040-90AI Winbond Electronics 4 MEGABIT (512K x 8) 5 VOLT SECTOR ERASE CMOS FLASH MEMORY Original PDF
    29F040-90NC Winbond Electronics 4 MEGABIT (512K x 8) 5 VOLT SECTOR ERASE CMOS FLASH MEMORY Original PDF

    29F040 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    flash hamming ecc

    Abstract: 29F0408RP radiation solid state recorder
    Text: SPACE ELECTRONICS INC. FLASH MEMORY S PACE PRODUCTS 29F0408RP DESCRIPTION: • Single 5.0V supply • Organization: - Memory cell array: 4M + 128k bit x 8bit - Data register: (512 + 16)bit x 8bit • Automatic program and erase - Page program: (512 + 16)Byte


    Original     		PDF 29F0408RP 528-Byte 00Rev1 flash hamming ecc 29F0408RP radiation solid state recorder

    Untitled

    Abstract: No abstract text available
    Text: -Preliminary- 29F0408RP FLASH MEMORY RADIATION HARDENED FEATURES: DESCRIPTION: • Single 5.0 volt Supply • Organization - Memory Cell Array: 4M + 128K bit x 8bit - Data Register: (512 + 16)bit x8bit • Automatic Program and Erase - Page Program: (512 + 16)Byte


    Original     		PDF 29F0408RP 528-Byte 98Rev1

    sample code read the flash memory manufacture id

    Abstract: 29F0408
    Text: PRELIMINARY 29F0408 32 Megabit 4M x 8-Bit Flash Memory FEATURES: DESCRIPTION: • Single 5.0 V supply • Excellent Single Event Effect • - SELTH: > 60 MeV/mg/cm2 Maxwell Technologies’ 29F0408 high-performance flash memory. The 29F0408 is a 4M (4,194,304) x 8-bit NAND Flash


    Original     		PDF 29F0408 29F0408 528-byte sample code read the flash memory manufacture id

    atmel 718

    Abstract: 28SF040 sst flash memory amd 29f040 29C040 29F040 SST28SF040
    Text: SST28SF040–Compatibility Considerations Between 4 Megabit Flash Products Application Note INTRODUCTION The SST 28SF040, Atmel 29C040 and AMD 29F040 are not 100% Program and Erase compatible for several reasons. 1. SST and AMD devices require a separate Erase


    Original     		PDF SST28SF040 28SF040, 29C040 29F040 28SF040 29C040 atmel 718 sst flash memory amd 29f040

    29F0408

    Abstract: No abstract text available
    Text: 29F0408 32 Megabit 4M x 8-Bit Flash Memory FEATURES: DESCRIPTION: • Single 5.0 V supply • Excellent Single Event Effect • - SELTH: > 60 MeV/mg/cm2 Maxwell Technologies’ 29F0408 high-performance flash memory. The 29F0408 is a 4M (4,194,304) x 8-bit NAND Flash


    Original     		PDF 29F0408 29F0408 528-byte

    27C32

    Abstract: 24c04 Atmel 27c301 atmel 24c02 39SF040 24C08 ATMEL dataman s4 27C101 Xicor 28256 eeprom 2864a
    Text: Dataman S4 Programmer Device Support List Library Version 2.84 May 2001 8 Bit EPROMS, EEPROMS & Flash ROMS AMD 27010 2716B 2732B 27C010 27C100 27C512L 27HB010 28C256 28F256 29F002NBB 29F040 9716 9864-25 27128 27256 27512 27C020 27C128 27C64 2817A 28F010 28F512


    Original     		PDF 2716B 2732B 27C010 27C100 27C512L 27HB010 28C256 28F256 29F002NBB 29F040 27C32 24c04 Atmel 27c301 atmel 24c02 39SF040 24C08 ATMEL dataman s4 27C101 Xicor 28256 eeprom 2864a

    Untitled

    Abstract: No abstract text available
    Text: 29F0408 32 Megabit 4M x 8-Bit Flash Memory FEATURES: DESCRIPTION: • Single 5.0 V supply • Excellent Single Event Effect • - SELTH: > 60 MeV/mg/cm2 Maxwell Technologies’ 29F0408 high-performance flash memory. The 29F0408 is a 4M (4,194,304) x 8-bit NAND Flash


    Original     		PDF 29F0408 528-Byte 29F0408

    Untitled

    Abstract: No abstract text available
    Text: 29F0408 32 Megabit 4M x 8-Bit Flash Memory FEATURES: DESCRIPTION: • Single 5.0 V supply • Excellent Single Event Effect • - SELTH: > 60 MeV/mg/cm2 Maxwell Technologies’ 29F0408 high-performance flash memory. The 29F0408 is a 4M (4,194,304) x 8-bit NAND Flash


    Original     		PDF 29F0408 29F0408 528-byte 29F0408cement

    29f040b

    Abstract: C167 flash programming programming 29F400 amd 29F010 flash memory C167 flash program flash 29f400 ROM. In-system programming c167 programming c166 TC75074 MCB167-NET
    Text: Application Note Use External Flash ROM on the MCB167-NET APNT_169 OVERVIEW The Keil MCB167-NET board may be equipped with two 29F040B Flash devices that provide 1MB ROM. In-system programming is possible via the COM interface of the MCB167-NET. This application notes comes with an example project and shows you how to program such Flash


    Original     		PDF MCB167-NET MCB167-NET 29F040B MCB167-NET. Vision2/C166 29F010, 29F040, C167 flash programming programming 29F400 amd 29F010 flash memory C167 flash program flash 29f400 ROM. In-system programming c167 programming c166 TC75074

    Untitled

    Abstract: No abstract text available
    Text: 29F0408 32 Megabit 4M x 8-Bit Flash Memory FEATURES: DESCRIPTION: • Single 5.0 V supply • Excellent Single Event Effect • - SELTH: > 60 MeV/mg/cm2 Maxwell Technologies’ 29F0408 high-performance flash memory. The 29F0408 is a 4M (4,194,304) x 8-bit NAND Flash


    Original     		PDF 29F0408 29F0408 528-byte 29F0408â

    CompactCellTM Static RAM

    Abstract: No abstract text available
    Text: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS


    Original     		PDF Am45DL6408G 16-Bit) 8-Bit/512 73-Ball limitation02 CompactCellTM Static RAM

    80c42

    Abstract: 82C42 siemens J146 80c42c 82c42 via cga to vga converter circuits siemens s35 lcd smd 39a diode zener B34AB amd elan sc300
    Text: Module Élan386_3 FORTH-SYSTEME GmbH Postfach 11 03 Küferstr. 8 l D-79200 Breisach a. Rhein l D-79206 Breisach a. Rhein 07667 908-0lFax ( Module Élan386_3 (C) Copyright 1998: FS FORTH-SYSTEME GmbH Postfach 1103


    Original     		PDF lan386 D-79200 D-79206 908-0lFax 908-200lsales lanTMSC300 80c42 82C42 siemens J146 80c42c 82c42 via cga to vga converter circuits siemens s35 lcd smd 39a diode zener B34AB amd elan sc300

    29LV800

    Abstract: 29f016 29f400 29F040
    Text: Common Flash Interface Version 1.4 Vendor Specific Extensions Application Note Introduction This application note provides an overview of the changes implemented between versions 1.3 and 1.4 of the SpansionTM Flash memory Common Flash Interface CFI implementation.


    Original     		PDF

    Am29F040

    Abstract: No abstract text available
    Text: Data Sheet 124376 FlashLite Byte-W ide M em ory C a rd — A M D A M 29F040 JUNE 95 REV A Product Features • Thin Profile— PCMCIA Type I Package, 3.3 mm Thick ■ Memory Capacity of 512 KByte, based on AMD 29F040 Flash Technology ■ Eight Equal Size Sectors of 64 KBytes each


    OCR Scan     		PDF 29F040 AM29F040 nonvolati8-6606

    29VF040

    Abstract: 29VF040-15 29VF040-12 29VF040-10
    Text: TMS29LF040, TMS29VF040 524288 BY 8-BIT FLASH MEMORIES SMJSB25C - SEPTEMBER 199S - REVISED NOVEMBER \m Single Power Supply 3.3 V ± 0.3 V - '29LF040 2.7 V to 3.6 V - ’29VF040 5 V ± 10% - See 29F040 Data sheet Literature Number SMJS820 Organization. . . 524288 By 8 Bits


    OCR Scan     		PDF SMJSB25C TMS29LF040, TMS29VF040 29LF040 29VF040 29F040 SMJS820) SMJ3825C 1985-REVISED 29VF040-15 29VF040-12 29VF040-10

    00JJ

    Abstract: M29F040 PLCC32 TSOP32 31AY
    Text: SGS-THOMSON OMDGKMDI[LI uTS IRQDOS M 29F040 4 Mb 512K x 8, Block Erase SING LE SUPPLY FLASH M EM O RY • 5V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 10jxs typical ■ ERASE TIME


    OCR Scan     		PDF M29F040 10jxs 12MHz) TSOP32 00JJ M29F040 PLCC32 31AY

    Untitled

    Abstract: No abstract text available
    Text: /S T *7 # S G S -T H O M S O N ^Q g®(Q [I[L[i TO®KilO(gi M 29F040 SINGLE SUPPLY 4 Megabit (512Kx 8, Sector Erase) FLASH MEMORY • FAST ACCESS TIME: 70ns ■ 5V ± 10% SUPPLY VOLTAGE for PROGRAM and ERASE OPERATIONS ■ 5 V ± 10% SUPPLY VOLTAGE in READ


    OCR Scan     		PDF 29F040 512Kx TSOP32 DQ71212

    17113e

    Abstract: No abstract text available
    Text: FINAL AMDB Am 29F040 4 M e g a b i t 5 2 4 , 2 8 8 x 8-Bit C M O S 5.0 Volt-only, S e c t o r E r a s e Flash M e m o r y DISTINCTIVE C HA R A C TER ISTIC S • 5. 0 V ± 1 0 % f or r e a d a n d w r i t e o p e r a t i o n s ■ — Minimizes system level power requirements


    OCR Scan     		PDF 29F040 Am29F040 17113e

    29f040b

    Abstract: No abstract text available
    Text: ?'RE ! AM DB A m 29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory Distinctive Characteristics H 5.0 V ± 10% for read and write operations — Minimizes system level power requirements • Manufactured on 0.35 Jim process technology


    OCR Scan     		PDF 29F040B Am29F040 Am29F040B

    s29f

    Abstract: No abstract text available
    Text: 29F040 4194304-BIT FLASH MEMORY S M J S 8 2 0 A - A P R IL 1 9 9 6 - R E V IS E D J A N U A R Y 1 9 9 7 I * Single Power Supply 5 V ± 10% FM PACKAGE T O P V IE W cm lo co co O r~. < < < < > I5 < i— i l — i l — il— i l — i l — il— i 4 '


    OCR Scan     		PDF TMS29F040 4194304-BIT 29LF040/ 29VF040 ComJS820A R-PDSO-G32) s29f

    Untitled

    Abstract: No abstract text available
    Text: 29F040 524288 BY 8-BIT FLASH MEMORY SMJS820B - APRIL 1996- REVISED NOVEMBER 1987 • • • • • • • • • • Single Power Supply 5 V± 10% - 3.3 V ± 0.3 V - See ’29LF040/’29VF040 Data Sheet Literature Number SMJS825 - 2.7 V to 3.6 V - See ’29LF040/’29VF040


    OCR Scan     		PDF SMJS820B TMS29F040 29LF040/ 29VF040 SMJS825) A18A17

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE INFORM ATIO N AMD£I Am29LV033C 32 Megabit 4 M x 8-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES SOFTWARE FEATURES • Zero Power Operation ■ — Sophisticated power management circuits reduce


    OCR Scan     		PDF Am29LV033C 63-ball 40-pin

    T1A16

    Abstract: 29LV116
    Text: A M D ÎI Am29LV116B 16 Megabit 2 M x 8-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications — Regulated voltage range: 3.0 to 3.6 volt read and


    OCR Scan     		PDF Am29LV116B ar116B T1A16 29LV116

    29LV033C

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION AMD£I Am29LV033C 32 Megabit 4 M x 8-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES SOFTWARE FEATURES • Zero Power Operation ■ — Sophisticated power management circuits reduce


    OCR Scan     		PDF Am29LV033C 63-ball 40-pin 29LV033C