Untitled
Abstract: No abstract text available
Text: Si7846DP Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 150 0.050 at VGS = 10 V 6.7 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V DC/DC • Industrial and 42 V Automotive
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Si7846DP
Si7846DP-T1-E3
Si7846DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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si4916
Abstract: No abstract text available
Text: Si4916DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.018 at VGS = 10 V 10 0.023 at VGS = 4.5 V 8.5 0.018 at VGS = 10 V 10.5 0.022 at VGS = 4.5 V
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Si4916DY
Si4916DY-T1-E3
Si4916DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si4916
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Untitled
Abstract: No abstract text available
Text: New Product Si7137DP Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) 0.00195 at VGS = - 10 V 0.0025 at VGS = - 4.5 V 0.0039 at VGS = - 2.5 V ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III P-Channel Power MOSFET
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Si7137DP
2002/95/EC
Si7137DP-T1-GE3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: E-Series Surface Mount Mixer 1600 - 2300 MHz EMRS-1800 V3.00 Features ● ● ● SM-24 LO Power +17 dBm Up to +14 dBm RF Surface Mount Specifications @ 25°C Frequency Range RF LO IF 1600 - 2300 MHz 1600 - 2300 MHz 10 - 200 MHz Conversion Loss dB 1600 - 2300 MHz
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EMRS-1800
SM-24
EMRS-1800
EMRS-1800TR
S0905
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DG2727
Abstract: DG2728 DG2747 DG2748 JESD78 Vishay S2 Marking
Text: DG2727, DG2728, DG2729 Vishay Siliconix 0.65-Ω, Low Voltage, Negative Swing Capable, Dual SPST Analog Switch DESCRIPTION FEATURES The DG2727, DG2728, and DG2729 are 0.6 Ω dual SPST analog switches. When Sx are used as signal input, these devices support AC-coupled audio signals with single rail
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DG2727,
DG2728,
DG2729
DG2729
DG2747/2748/2749
11-Mar-11
DG2727
DG2728
DG2747
DG2748
JESD78
Vishay S2 Marking
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DIODE 0536
Abstract: Si7738 Si7738DP Si7738DP-T1-E3
Text: New Product Si7738DP Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) 150 0.038 at VGS = 10 V 30 35 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % UIS Tested
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Si7738DP
Si7738DP-T1-E3
Si7738DP-T1-GE3
11-Mar-11
DIODE 0536
Si7738
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IRFIB7N50A
Abstract: SiHFIB7N50A IRFB11N50A SiHFB11N50A SiHFIB7N50A-E3 transistor irfib7n50a
Text: IRFIB7N50A, SiHFIB7N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 500 RDS(on) (Ω) VGS = 10 V 0.52 Qg (Max.) (nC) 52 Qgs (nC) 13 Qgd (nC) 18 Configuration Single Available RoHS* COMPLIANT APPLICATIONS D TO-220 FULLPAK • Low Gate Charge Qg Results in Simple Drive
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IRFIB7N50A,
SiHFIB7N50A
O-220
2002/95/EC
18-Jul-08
IRFIB7N50A
IRFB11N50A
SiHFB11N50A
SiHFIB7N50A-E3
transistor irfib7n50a
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Untitled
Abstract: No abstract text available
Text: Si4866BDY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0053 at VGS = 4.5 V 21.5 VDS (V) 0.006 at VGS = 2.5 V 20.2 0.0074 at VGS = 1.8 V 18.2 12 Qg (Typ.) 29.5 nC • Halogen-free According to IEC 61249-2-21 Available
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Si4866BDY
Si4866BDY-T1-E3
Si4866BDY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si4840BDY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.009 at VGS = 10 V 19 0.012 at VGS = 4.5 V 16 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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Si4840BDY
2002/95/EC
Si4840BDY-T1-E3
Si4840BDY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si4904DY Vishay Siliconix Dual N-Channel 40-V MOSFET FEATURES PRODUCT SUMMARY VDS V 40 RDS(on) (Ω) ID (A) 0.016 at VGS = 10 V 8 0.019 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested
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Si4904DY
Si4904DY-T1-E3
Si4904DY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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eaton el 198
Abstract: ITE circuit breakers "cross reference" WESTINGHOUSE motor life line westinghouse ITE circuit breakers wiring diagram STAR DELTA motor sequential starter Project Report of smoke alarm using IC 555 doc ITE/Gould relay j13 MTBF fit IGBT 1200 UNITROL 1000
Text: Electrical Sector Solutions Volume 3 Power Distribution and Control Assemblies Volume 3: Power Distribution and Control Assemblies Eaton Corporation Electrical Sector 1111 Superior Ave. Cleveland, OH 44114 United States 877-ETN-CARE 877-386-2273 Eaton.com
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877-ETN-CARE
CA08100004E
V3-T2-65
V3-T2-42â
V3-T2-52
V3-T2-39â
V3-T2-41
V3-T9-254
V3-T7-17
CA08100004Eâ
eaton el 198
ITE circuit breakers "cross reference"
WESTINGHOUSE motor life line
westinghouse
ITE circuit breakers
wiring diagram STAR DELTA motor sequential starter
Project Report of smoke alarm using IC 555 doc
ITE/Gould relay j13
MTBF fit IGBT 1200
UNITROL 1000
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Untitled
Abstract: No abstract text available
Text: Si4908DY Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A)a 0.060 at VGS = 10 V 5.0 0.070 at VGS = 4.5 V 4.7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested
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Si4908DY
Si4908DY-T1-E3
Si4908DY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si4900DY Vishay Siliconix Dual N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.058 at VGS = 10 V 5.3 0.072 at VGS = 4.5 V 4.7 VDS (V) 60 Qg (Typ.) 13 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Si4900DY
Si4900DY-T1-E3
Si4900DY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Si2305ADS
Abstract: Si2305ADS-T1-E3 SI2305ADS-T1-GE3
Text: New Product Si2305ADS Vishay Siliconix P-Channel 8-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 4.1 -8 0.060 at VGS = - 2.5 V - 3.4 0.088 at VGS = - 1.8 V - 2.0 • Halogen-free According to IEC 61249-2-21 Definition
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Si2305ADS
O-236
OT-23)
Si2305ADS-T1-E3
Si2305ADS-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si4894BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.011 at VGS = 10 V 12 0.016 at VGS = 4.5 V 9.8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested
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Si4894BDY
Si4894BDY-T1-E3
Si4894BDY-T1-GE3
11-Mar-11
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DG2728
Abstract: No abstract text available
Text: DG2727, DG2728, DG2729 Vishay Siliconix 0.65-Ω, Low Voltage, Negative Swing Capable, Dual SPST Analog Switch DESCRIPTION FEATURES The DG2727, DG2728, and DG2729 are 0.6 Ω dual SPST analog switches. When Sx are used as signal input, these devices support AC-coupled audio signals with single rail
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DG2727,
DG2728,
DG2729
DG2729
DG2747/2748/2749
11-Mar-11
DG2728
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si4840
Abstract: SI4840BDY-T1-E3 si4840bdy
Text: Si4840BDY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.009 at VGS = 10 V 19 0.012 at VGS = 4.5 V 16 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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Si4840BDY
2002/95/EC
Si4840BDY-T1-E3
Si4840BDY-T1-GE3
18-Jul-08
si4840
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Si4916DY-T1-E3
Abstract: TB 9A DIOD
Text: Si4916DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.018 at VGS = 10 V 10 0.023 at VGS = 4.5 V 8.5 0.018 at VGS = 10 V 10.5 0.022 at VGS = 4.5 V
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Si4916DY
18-Jul-08
Si4916DY-T1-E3
TB 9A DIOD
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64895
Abstract: No abstract text available
Text: SPICE Device Model SiR404DP Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiR404DP
18-Jul-08
64895
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Si1473DH
Abstract: No abstract text available
Text: New Product Si1473DH Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)c 0.100 at VGS = - 10 V - 2.7 0.145 at VGS = - 4.5 V - 2.7 VDS (V) - 30 Qg (Typ.) • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC
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Si1473DH
2002/95/EC
OT-363
SC-70
Si2307CDS-T1-E3
18-Jul-08
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8670s
Abstract: No abstract text available
Text: SPICE Device Model SJ800DP Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SJ800DP
18-Jul-08
8670s
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Si4906DY-T1-E3
Abstract: Si4906DY-T1-GE3 SI4906DY
Text: Si4906DY Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 40 RDS(on) (Ω) ID (A)a 0.039 at VGS = 10 V 6.6 0.050 at VGS = 4.5 V 5.8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Si4906DY
Si4906DY-T1-E3
Si4906DY-T1-GE3
18-Jul-08
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micro SD Card connector
Abstract: S0905043
Text: REV. 1 Z ECN.NO. MODIFY.CONTENT DATE S0905043 In itia l release S0907005 Chang* The Sw iioh P in *09 7/01*09 5 /8 0 11.95 5.975 U55±0.13 1 1 « Amphenol 2.40±o.i5 CD Switch IZ Z t I -Hi ~n 2-0.85±o.ts 8 - 0 . 3 0 ± o.05 7-1.10±o.io 7.70 ±o.w Card, Center-
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S0905043
S0907005
micro SD Card connector
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114-008
Abstract: No abstract text available
Text: 5 REV. ECN.NO. S0905043 11.95 No.8 of 11.10 7/01'09 2 h WITT g DATE S /2 0 '09 2.40 ±0.15 5 .975 I55±0.t3 MODIFY.CONTENT In itia l teleast Chang* Tht Suriich P in -Ab./ O o -H C5 O 11.10±0.10 r o f 11.95 J B & z a .l j r i —_B B ——H I-C ard C e n i e r - ^ -
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S0905043
114-008
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