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    SI4840BDY Price and Stock

    Vishay Siliconix SI4840BDY-T1-E3

    MOSFET N-CH 40V 19A 8SO
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    DigiKey SI4840BDY-T1-E3 Reel 37,500 2,500
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    SI4840BDY-T1-E3 Cut Tape 1,250 1
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    • 10 $1.309
    • 100 $1.0181
    • 1000 $0.70296
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    SI4840BDY-T1-E3 Digi-Reel 1
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    Vishay Siliconix SI4840BDY-T1-GE3

    MOSFET N-CH 40V 19A 8SO
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    DigiKey SI4840BDY-T1-GE3 Cut Tape 4,695 1
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    • 10 $1.309
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    SI4840BDY-T1-GE3 Reel 2,500 2,500
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    SI4840BDY-T1-GE3 Digi-Reel 1
    • 1 $1.6
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    Vishay Intertechnologies SI4840BDY-T1-E3

    Trans MOSFET N-CH 40V 12.4A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4840BDY-T1-E3)
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    Avnet Americas SI4840BDY-T1-E3 Reel 17,500 16 Weeks 2,500
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    SI4840BDY-T1-E3 Reel 2,500
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    Mouser Electronics SI4840BDY-T1-E3 13,917
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    • 10 $1.22
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    Verical SI4840BDY-T1-E3 2,500 2,500
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    SI4840BDY-T1-E3 27 10
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    Arrow Electronics SI4840BDY-T1-E3 Cut Strips 27 6 Weeks 1
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    Bristol Electronics SI4840BDY-T1-E3 250
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    TTI SI4840BDY-T1-E3 Reel 5,000 2,500
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    TME SI4840BDY-T1-E3 2,356 1
    • 1 $1.074
    • 10 $0.78
    • 100 $0.642
    • 1000 $0.596
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    Avnet Asia SI4840BDY-T1-E3 14 Weeks 2,500
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    New Advantage Corporation SI4840BDY-T1-E3 42,500 1
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    Vishay Intertechnologies SI4840BDY-T1-GE3

    Trans MOSFET N-CH 40V 12.4A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4840BDY-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI4840BDY-T1-GE3 Reel 7,500 16 Weeks 2,500
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    SI4840BDY-T1-GE3 Ammo Pack 17 Weeks, 4 Days 1
    • 1 $1.67
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    • 100 $1.11
    • 1000 $1.11
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    Mouser Electronics SI4840BDY-T1-GE3 10,095
    • 1 $1.24
    • 10 $1.07
    • 100 $0.916
    • 1000 $0.678
    • 10000 $0.586
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    Verical SI4840BDY-T1-GE3 2,500 2,500
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    Arrow Electronics SI4840BDY-T1-GE3 2,500 16 Weeks 2,500
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    SI4840BDY-T1-GE3 Cut Strips 6 16 Weeks 1
    • 1 $0.5989
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    Bristol Electronics SI4840BDY-T1-GE3 5
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    Quest Components SI4840BDY-T1-GE3 1,769
    • 1 $2.376
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    • 100 $2.376
    • 1000 $0.9801
    • 10000 $0.891
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    TTI SI4840BDY-T1-GE3 Reel 37,500 2,500
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    SI4840BDY-T1-GE3 Cut Tape 2,000 10
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    Avnet Asia SI4840BDY-T1-GE3 14 Weeks 2,500
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    New Advantage Corporation SI4840BDY-T1-GE3 5,000 1
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    Vishay Intertechnologies SI4840BDYT1E3

    Small Signal Field-Effect Transistor, 19A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
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    ComSIT USA SI4840BDYT1E3 1,665
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    SI4840BDY Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI4840BDY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 19A 8SOIC Original PDF
    SI4840BDY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 19A 8SOIC Original PDF

    SI4840BDY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si4840BDY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.009 at VGS = 10 V 19 0.012 at VGS = 4.5 V 16 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original
    PDF Si4840BDY 2002/95/EC Si4840BDY-T1-E3 Si4840BDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    si4840

    Abstract: SI4840BDY-T1-E3 si4840bdy
    Text: Si4840BDY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.009 at VGS = 10 V 19 0.012 at VGS = 4.5 V 16 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original
    PDF Si4840BDY 2002/95/EC Si4840BDY-T1-E3 Si4840BDY-T1-GE3 18-Jul-08 si4840

    AN609

    Abstract: Si4840BDY
    Text: Si4840BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    PDF Si4840BDY AN609 19-Dec-07

    Untitled

    Abstract: No abstract text available
    Text: Si4840BDY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.009 at VGS = 10 V 19 0.012 at VGS = 4.5 V 16 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original
    PDF Si4840BDY 2002/95/EC Si4840BDY-T1-E3 Si4840BDY-T1-GE3 11-Mar-11

    Si4840BDY

    Abstract: Si4840BDY-T1-E3 A3350
    Text: New Product Si4840BDY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)d 0.009 at VGS = 10 V 19 0.012 at VGS = 4.5 V 16 VDS (V) 40 • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.) 15 nC


    Original
    PDF Si4840BDY Si4840BDY-T1-E3 08-Apr-05 A3350

    SI4840BDYT1GE3

    Abstract: SI4840B
    Text: Specification Comparison www.vishay.com Vishay Siliconix Si4840BDY vs. Si4840DY Description: N-Channel, 40 V D-S MOSFET Package: SO-8 Pin Out: Identical  Part Number Replacements: Si4840BDY-T1-GE3 replaces Si4840DY-T1-GE3 Si4840BDY-T1-E3 replaces Si4840DY-T1-E3


    Original
    PDF Si4840BDY Si4840DY Si4840BDY-T1-GE3 Si4840DY-T1-GE3 Si4840BDY-T1-E3 Si4840DY-T1-E3 SI4840BDYT1GE3 SI4840B

    Untitled

    Abstract: No abstract text available
    Text: Si4840BDY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.009 at VGS = 10 V 19 0.012 at VGS = 4.5 V 16 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original
    PDF Si4840BDY 2002/95/EC Si4840BDY-T1-E3 Si4840BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    si4840

    Abstract: Si4840BDY S-80740
    Text: SPICE Device Model Si4840BDY Vishay Siliconix Dual N-Channel 40V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si4840BDY 18-Jul-08 si4840 S-80740

    Si4840BDY

    Abstract: Si4840BDY-T1-E3
    Text: Si4840BDY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.009 at VGS = 10 V 19 0.012 at VGS = 4.5 V 16 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original
    PDF Si4840BDY 2002/95/EC Si4840BDY-T1-E3 Si4840BDY-T1-GE3 11-Mar-11

    si4840bdy

    Abstract: No abstract text available
    Text: Si4840BDY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.009 at VGS = 10 V 19 0.012 at VGS = 4.5 V 16 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested


    Original
    PDF Si4840BDY Si4840BDY-T1-E3 Si4840BDY-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4840BDY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)d 0.009 at VGS = 10 V 19 0.012 at VGS = 4.5 V 16 VDS (V) 40 • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.) 15 nC


    Original
    PDF Si4840BDY Si4840BDY-T1-E3 18-Jul-08

    si4840bdy

    Abstract: SI4840BDY-T1-E3 si4840 Si4840DY si4840dyt1e3 "Package SO-8" Si4840DY-T1 Si4840DY-T1-E3
    Text: Specification Comparison Vishay Siliconix Si4840BDY vs. Si4840DY Description: Package: Pin Out: N-Channel, 30-V D-S MOSFET SO-8 Identical Part Number Replacements: Si4840BDY-T1-E3 replaces Si4840DY-T1-E3 Si4840BDY-T1-E3 replaces Si4840DY-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original
    PDF Si4840BDY Si4840DY Si4840BDY-T1-E3 Si4840DY-T1-E3 Si4840DY-T1 si4840 si4840dyt1e3 "Package SO-8"

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4840BDY www.vishay.com Vishay Siliconix Dual N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    PDF Si4840BDY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si4840BDY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.009 at VGS = 10 V 19 0.012 at VGS = 4.5 V 16 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original
    PDF Si4840BDY 2002/95/EC Si4840BDY-T1-E3 Si4840BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: LT3795 110V LED Controller with Spread Spectrum Frequency Modulation Features n n n n n n n n n n n n n n n n Description 3000:1 True Color PWM Dimming Wide Input Voltage Range: 4.5V to 110V Input and Output Current Reporting PMOS Switch Driver for PWM and Output Disconnect


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    PDF LT3795 100kHz QFN-16 LT3474/ LT3474-1 TSSOP-16E LT3475/ LT3475-1 TSSOP-20E com/LT3795

    LT3757AHMSE

    Abstract: pic optocoupler driver mosfet LT3757 LT3799-1 D0712 Voltage to Current Converter circuit 4-20mA 50SQ04FN lggr LTDYX
    Text: LT3757/LT3757A Boost, Flyback, SEPIC and Inverting Controller Features Description Wide Input Voltage Range: 2.9V to 40V n Positive or Negative Output Voltage Programming with a Single Feedback Pin n Current Mode Control Provides Excellent Transient Response


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    PDF LT3757/LT3757A 100kHz 10-Lead 10-Pin 3757/LT3757A MSOP-12E 240mA/420mA MSOP-16 LT3757AHMSE pic optocoupler driver mosfet LT3757 LT3799-1 D0712 Voltage to Current Converter circuit 4-20mA 50SQ04FN lggr LTDYX

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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    PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    Untitled

    Abstract: No abstract text available
    Text: LT3795 110V LED Controller with Spread Spectrum Frequency Modulation Features n n n n n n n n n n n n n n n n Description 3000:1 True Color PWM Dimming Wide Input Voltage Range: 4.5V to 110V Input and Output Current Reporting PMOS Switch Driver for PWM and Output Disconnect


    Original
    PDF LT3795 100kHz QFN-16 LT3474/LT3474-1 TSSOP-16E LT3475/LT3475-1 TSSOP-20E com/LT3795 3795fb

    LTC3789

    Abstract: LTC3789EGN CKT DIAGRAM OF TRIM POT SiR484OY LTC3780 Si4840BDY dimension LTC3789EUFD LTC3789GN BG1 LED LTC3789E
    Text: LTC3789 High Efficiency, Synchronous, 4-Switch Buck-Boost Controller FEATURES DESCRIPTION Single Inductor Architecture Allows VIN Above, Below or Equal to Regulated VOUT n Programmable Input or Output Current Feedback Loop n Wide V Range: 4V to 38V IN n 1% Output Voltage Accuracy: 0.8V < V


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    PDF LTC3789 200kHz 600kHz 28-Lead 3LTM4605 LTM4607 LTM4609 LTC3533 DFN-14 LTC3789 LTC3789EGN CKT DIAGRAM OF TRIM POT SiR484OY LTC3780 Si4840BDY dimension LTC3789EUFD LTC3789GN BG1 LED LTC3789E

    Si4840BDP

    Abstract: Transformer sepic LT3757IMSE VP1-0076 ERIE 75-25 sepic converter 550khz A9 SOT-23 dc dc sepic 24V converter A2 SOT-23 mosfet LTC1871-1
    Text: LT3757 Boost, Flyback, SEPIC and Inverting Controller FEATURES n n n n n n n n n n n DESCRIPTION Wide Input Voltage Range: 2.9V to 40V Positive or Negative Output Voltage Programming with a Single Feedback Pin Current Mode Control Provides Excellent Transient


    Original
    PDF LT3757 100kHz-1MHz) 10-Lead 10-Pin 550kHz LT3845 LTC3862/LTC3862-1 LTC3872 OT-23 3757fa Si4840BDP Transformer sepic LT3757IMSE VP1-0076 ERIE 75-25 sepic converter 550khz A9 SOT-23 dc dc sepic 24V converter A2 SOT-23 mosfet LTC1871-1

    beyond Be not charger

    Abstract: LTC3789 c3789
    Text: LTC3789 High Efficiency, Synchronous, 4-Switch Buck-Boost Controller Features Description Single Inductor Architecture Allows VIN Above, Below or Equal to the Regulated VOUT n Programmable Input or Output Current n Wide V Range: 4V to 38V IN n 1% Output Voltage Accuracy: 0.8V < V


    Original
    PDF LTC3789 200kHz 600kHz 28-Lead QFN-32 SSOP-24 QFN-24 DFN-16 TSSOP-20 beyond Be not charger c3789

    LTC3789

    Abstract: No abstract text available
    Text: LTC3789 High Efficiency, Synchronous, 4-Switch Buck-Boost Controller FEATURES n n n n n n n n n n n n n n DESCRIPTION The LTC 3789 is a high performance buck-boost switching regulator controller that operates from input voltages above, below or equal to the output voltage. The


    Original
    PDF LTC3789 600kHz, LTC3789 LTM4609 LTC3112 DFN-16 TSSOP-20 LTC3533 DFN-14 3789fa

    Si4840BDP

    Abstract: LTDYX toroid transformer LT3757 12v 6A variable convertor diagram flyback converter 2A 15V MBRS340T3G snubber capacitor 68NF LT3757EDD LT3757IMSE
    Text: LT3757 Boost, Flyback, SEPIC and Inverting Controller Features Description Wide Input Voltage Range: 2.9V to 40V n Positive or Negative Output Voltage Programming with a Single Feedback Pin n Current Mode Control Provides Excellent Transient Response n Programmable Operating Frequency 100kHz to


    Original
    PDF LT3757 100kHz 10-Lead 10-Pin LT3825 LTC3803/LTC38033/ LTC3803-5 200kHz LTC3805/LTC3805-5 70kHz Si4840BDP LTDYX toroid transformer LT3757 12v 6A variable convertor diagram flyback converter 2A 15V MBRS340T3G snubber capacitor 68NF LT3757EDD LT3757IMSE

    3 watt 70v zener diode

    Abstract: inkjet print head interface K784P
    Text: Inkjet Printer Table of Contents ACCESS SENSORS, Door Sensor. 3 CONTROL BOARD, DSP


    Original
    PDF 00V-600V; DO-220AA V-540V; V-440V DO-204AL DO-41) DO-204AC DO-15) 3 watt 70v zener diode inkjet print head interface K784P