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    SIR404DP Price and Stock

    Vishay Siliconix SIR404DP-T1-GE3

    MOSFET N-CH 20V 60A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIR404DP-T1-GE3 Reel 21,000 3,000
    • 1 -
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    • 1000 -
    • 10000 $0.8125
    		Buy Now
    SIR404DP-T1-GE3 Cut Tape 2,892 1
    • 1 $1.36
    • 10 $1.131
    • 100 $0.8999
    • 1000 $0.8125
    • 10000 $0.8125
    		Buy Now
    SIR404DP-T1-GE3 Digi-Reel 1
    • 1 $1.36
    • 10 $1.131
    • 100 $0.8999
    • 1000 $0.8125
    • 10000 $0.8125
    		Buy Now

    Vishay Intertechnologies SIR404DP-T1-GE3

    N-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SIR404DP-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIR404DP-T1-GE3 Reel 17 Weeks 3,000
    • 1 -
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    • 10000 $0.9035
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    Mouser Electronics SIR404DP-T1-GE3 5,353
    • 1 $1.93
    • 10 $1.6
    • 100 $1.28
    • 1000 $0.929
    • 10000 $0.929
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    Verical SIR404DP-T1-GE3 3,000 3,000
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    • 10000 $0.9695
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    Newark SIR404DP-T1-GE3 Cut Tape 3,122 1
    • 1 $1.54
    • 10 $1.41
    • 100 $1.33
    • 1000 $1.33
    • 10000 $1.33
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    SIR404DP-T1-GE3 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.832
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    TTI SIR404DP-T1-GE3 Reel 3,000 3,000
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    • 10000 $0.81
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    TME SIR404DP-T1-GE3 3,000
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    • 1000 -
    • 10000 $1.37
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    Component Electronics, Inc SIR404DP-T1-GE3 772
    • 1 $2.31
    • 10 $2.31
    • 100 $1.73
    • 1000 $1.5
    • 10000 $1.5
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    EBV Elektronik SIR404DP-T1-GE3 19 Weeks 3,000
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    SIR404DP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SIR404DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 60A 8-SOIC Original PDF

    SIR404DP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    64895

    Abstract: No abstract text available
    Text: SPICE Device Model SiR404DP Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiR404DP 18-Jul-08 64895

    TB-17

    Abstract: No abstract text available
    Text: New Product SiR404DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.00160 at VGS = 10 V 60 0.00175 at VGS = 4.5 V 60 0.00225 at VGS = 2.5 V 60 VDS (V) 20 Qg (Typ.) 64.5 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS


    Original     		PDF SiR404DP 2002/95/EC SiR404DP-T1-GE3 18-Jul-08 TB-17

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR404DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.00160 at VGS = 10 V 60 0.00175 at VGS = 4.5 V 60 0.00225 at VGS = 2.5 V 60 VDS (V) 20 Qg (Typ.) 64.5 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS


    Original     		PDF SiR404DP 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR404DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.00160 at VGS = 10 V 60 0.00175 at VGS = 4.5 V 60 0.00225 at VGS = 2.5 V 60 VDS (V) 20 Qg (Typ.) 64.5 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS


    Original     		PDF SiR404DP 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR404DP www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiR404DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR404DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.00160 at VGS = 10 V 60 0.00175 at VGS = 4.5 V 60 0.00225 at VGS = 2.5 V 60 VDS (V) 20 Qg (Typ.) 64.5 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS


    Original     		PDF SiR404DP 2002/95/EC SiR404DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR404DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 20 0.00160 at VGS = 10 V 60 0.00175 at VGS = 4.5 V 60 0.00225 at VGS = 2.5 V 60 Qg (Typ.) 64.5 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS


    Original     		PDF SiR404DP 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR404DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.00160 at VGS = 10 V 60 0.00175 at VGS = 4.5 V 60 0.00225 at VGS = 2.5 V 60 VDS (V) 20 Qg (Typ.) 64.5 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS


    Original     		PDF SiR404DP 2002/95/EC SiR404DP-T1-GE3 11-Mar-11

    mosfet 0018

    Abstract: transistor c 6073 AN609
    Text: SiR404DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF SiR404DP AN609, 02-Apr-09 mosfet 0018 transistor c 6073 AN609

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n tertec h n olo g y, I n c . Power MOSFETs M O S F ET s Tre nchFET G e n III Key features and Benefits Low conduction and switching losses enable increased efficiency and reduced power consumption • Record-breaking maximum on-resistance at VGS = 4.5 V rating


    Original     		PDF VMN-PT0105-1007

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477