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    S 122 TRANSISTOR Search Results

    S 122 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    S 122 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BS870 DMOS Transistors N-Channel D SOT-23 G .122 (3.1) .110 (2.8) .016 (0.4) S Top View Mounting Pad Layout SOT-23 .056 (1.43) .052 (1.33) 3 1 .007 (0.175) .005 (0.125) .016 (0.4) 0.079 (2.0) .045 (1.15) .037 (0.95) max. .004 (0.1) 2 .037(0.95) .037(0.95)


    Original     		PDF BS870 OT-23 OT-23

    Untitled

    Abstract: No abstract text available
    Text: 2N7002 DMOS Transistors N-Channel D SOT-23 G .122 (3.1) .110 (2.8) .016 (0.4) Top View S .056 (1.43) .052 (1.33) 3 1 2 0.037 (0.95) .007 (0.175) .005 (0.125) 0.037 (0.95) .016 (0.4) 0.079 (2.0) .045 (1.15) .037 (0.95) max. .004 (0.1) .037(0.95) .037(0.95)


    Original     		PDF 2N7002 OT-23 OT-23

    Untitled

    Abstract: No abstract text available
    Text: BS850 DMOS Transistors P-Channel D G SOT-23 .122 (3.1) .110 (2.8) .016 (0.4) S Top View Mounting Pad Layout SOT-23 .056 (1.43) .052 (1.33) 3 1 .007 (0.175) .005 (0.125) .016 (0.4) 0.079 (2.0) .045 (1.15) .037 (0.95) max. .004 (0.1) 2 .037(0.95) .037(0.95)


    Original     		PDF BS850 OT-23 OT-23

    Untitled

    Abstract: No abstract text available
    Text: N AUER P H I L I P S / D I S C R E T E m bt.S3T31 Q O O T S H S 4 H fl?D D ^ 2 f ]-Q ~ LSD TRANSISTORS ip fn H ; Vj t p ' Vs t- J* fA * ' ^ NF (dB) Outline Drawing 3 2.5 — TO-122 TO-122 TO-122 TO-122 TO-122 TO-122 (MHz) eb (PP) Outline Drawing 200 200


    OCR Scan     		PDF S3T31 O-122 2NL930

    TIC 122 Transistor

    Abstract: bc 147 B transistor FOR TRANSISTOR BC 149 B BC 148 TRANSISTOR transistor 45 f 122 NPN transistor bc 148 transistor bc 146 BC 148 L transistor bc 148 transistor BC 157
    Text: .2 5 C D • 023SbO S NPN Silicon Transistors GQGMCH? *? MSIEG ■ _ W ~/l SIEMENS A K T IE N G E S E L L S C H A F C 1 2 1 1 ! B C 122 ! - B C 123 Î BC 121, BC 122, and BC 123 are miniature epitaxial NPN silicon planar transistors in U 32


    OCR Scan     		PDF 023SbO BC-121 blu122, BC123 0235bOS QQQ41Q3 BC121. BC122, TIC 122 Transistor bc 147 B transistor FOR TRANSISTOR BC 149 B BC 148 TRANSISTOR transistor 45 f 122 NPN transistor bc 148 transistor bc 146 BC 148 L transistor bc 148 transistor BC 157

    BFS17

    Abstract: BFS17W
    Text: • bb53^31 0a252bb 122 ■ APX P h ilip s S e m icon d u inary sp ecification NPN 1 GHz wideband transistor BFS17W N AUER PHILIPS/ DIS CRETE DESCRIPTION b7E PINNING Silicon NPN transistor in a plastic


    OCR Scan     		PDF 0a252bb BFS17W OT323 BFS17W BFS17. MBC670 OT323. BFS17

    JD127

    Abstract: MJ012 6AI diode mj01
    Text: rz S 7 “ 7# G S - T H O M S O M JD 122 M JD 127 N 6ai»igS lLlliSTI*§iMBeS COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • SGS-THOMSON PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS < INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE . SURFACE-MOUNTING TO-252 DPAK


    OCR Scan     		PDF O-252 TIP122 TIP127 MJD122 MJD127 JD127 MJ012 6AI diode mj01

    fr91a

    Abstract: philips bfq FQ235a t122 25 3 FQ262a fr90a 122e BFR134 t122 25 10 t122 25 72
    Text: 22 Small Signal Leaded Devices Wideband Transistors cont. h FE R a tin g s Type P ackage v CEO V S O T -103 S O T -103 S O T -103 S O T -103 S O T -173 S O T -173 S O T -173 S O T -173 S O T -173 S O T -173 TO -72 S O T -173 S O T -122 S O T-37 TO -72 TO -72


    OCR Scan     		PDF BFG96 BFP96 BFP505 BFP520 BFP540 BFQ33C BFQ63 BFQ65 BFQ66 BFQ161 fr91a philips bfq FQ235a t122 25 3 FQ262a fr90a 122e BFR134 t122 25 10 t122 25 72

    IP122

    Abstract: transistor darlington TIP-120 tip122c TIP120
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP120/121/122 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Complement to TIP125/126/127 ABSOLUTE MAXIMUM RATINGS Ta = 25°C Characteristic Symbol C o lle c to r-B a s e V o lta g e : TIP120 : TIP121 : TIP122


    OCR Scan     		PDF TIP120/121/122 TIP125/126/127 TIP120 TIP121 TIP122 IP122 transistor darlington TIP-120 tip122c TIP120

    Untitled

    Abstract: No abstract text available
    Text: ! HARRIS SEMICON] SECTOR File Number 2332 SbE D • 4302571 0D4G5fl7 122 H H A S 2N6547 7=35 - / 9 15-Ampere Power-Switching Transistor Feature*: TERM INAL DESIGNATION ■ 700% High temperature tested for 100° C parameters ■Fast switching speed ■High voltage rating V'c e x = 450V


    OCR Scan     		PDF 2N6547 15-Ampere 2N6547 LI3Q2271

    TIP 122 transistor

    Abstract: transistor tip 122 tip 120 tip 122 transistor darlington TIP-120 IP122 TIP 21 transistor
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR T IP I 20/121/122 MEDIUM POWER LINEAR SWITCHING APPLICATIONS • C o m p le m e n t lo T IP I 25/126/127 ABSOLUTE MAXIMUM RATINGS i C haracteristic S ym bol C o lle c to r-B a s e V o lta g e : TIP120 R ating 60


    OCR Scan     		PDF TIP120 TIP121 TIP120/121/122 TIP 122 transistor transistor tip 122 tip 120 tip 122 transistor darlington TIP-120 IP122 TIP 21 transistor

    02n60

    Abstract: JD127
    Text: motorola sc x s t r s /r 12E D • I b3b7E54 GOflSSb? t f | 'T 1 3 3 - / 2 ? 7”-33-3/ MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN M JD 122 PNP M JD 127 Com plem entary Darlington Pow er Transistors DPAK For Surface M ount A pplications Designed for general purpose am plifier and low speed switching applications.


    OCR Scan     		PDF b3b7E54 120-TIP TIP125-T1P127 b3b72S4 MJD122 MJD127 02n60 JD127

    TDA 5331

    Abstract: tda 2222 t06 sot 23 TDA 7283 capacitor 224 BLV33 0049543 SOT147
    Text: N AMER P H I L I P S / D I S C R E T E bTE D m bbSBIBl QDBñTñS 122 BLV33 IAPX V.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended for use in linear v .h .f. amplifiers for television transmitters and transposers. Diffused emitter ballasting resistors and the application of gold sandwich


    OCR Scan     		PDF bb53131 BLV33 7ZB3786 7Z83785 7Z83784 TDA 5331 tda 2222 t06 sot 23 TDA 7283 capacitor 224 BLV33 0049543 SOT147

    CNY 17-2 optocoupler

    Abstract: GE cny17 CNY 17-1 siemens opto coupler siemens n23f GE opto detector siemens CNY17-2
    Text: SIEMENS CMPN TS t OPTO MME 1 • fl23b32b 0004177 S BI SI EX SIEM EN S CNY17 SER IES SINGLE CHANNEL PHOTOTRANSISTOR OPTOCOUPLER - H l- 2 3 Pa cka ge D im e nsions in In ch es mm xrniti ■343(17) .*»(»«) .1 #(3J) .130(33) 1 T~ r \ " o- rSS .122(3.1) 3


    OCR Scan     		PDF fl23b32b CNY17 CNY17-2 NY17-4 CNY 17-2 optocoupler GE cny17 CNY 17-1 siemens opto coupler siemens n23f GE opto detector siemens CNY17-2

    IRFD121

    Abstract: TA17401 IRFD120 IRFD122 IRFD123 TB334 ES36 rfd12 RFD120
    Text: tyvvys S IRFD120, IRFD121, IRFD 122, IRFD 123 S e m ico n d ucto r y y 1.3A and 1.1 A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 1.3A and 1.1 A, 80V and 100V • Linear Transfer Characteristics These are advanced power MOSFETs designed, tested, and


    OCR Scan     		PDF IRFD121, TB334 IRFD121 TA17401 IRFD120 IRFD122 IRFD123 TB334 ES36 rfd12 RFD120

    diode sy 710

    Abstract: sy 710 diode FN121 ufn120 V01T
    Text: POWER MOSFET TRANSISTORS UFN120 100 Volt, 0.3 Ohm N-Channel 122 U F N 123 UFN FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • N o Second Breakdown • Excellent T em perature Stability D ESCRIPT IO N The Unitrode power M O S F E T design utilizes the m ost advanced technology available.


    OCR Scan     		PDF UFN120 UFN121 UFN122 UFN123 diode sy 710 sy 710 diode FN121 ufn120 V01T

    DIODE ITT 310

    Abstract: OC70P2 transistor 1p3
    Text: c*o OPTOELECTRONICS |* _ PH O TO TR A N SISTO R O P T IC A L IN T E R R U P T E R S W IT C H ES •Q £ h* .312 7.83 .j (- 1 2 4 (3 151 J-.1P3 ¡2.6) NOM .122(3.10) I T1 C ia p Ù o e r îiii'e Pai s W itt! ' ■/JniU' M u m b i; tm in . ._££>/S e iì a s .,


    OCR Scan     		PDF H21A1 C70P1 C70P2 DIODE ITT 310 OC70P2 transistor 1p3

    transistor s0014

    Abstract: S0014
    Text: SIEMENS AKTIENGESEL LSCH AF ISIEG fl23SbOS 00272flb b 47E D SFH 601G SERIES SIEM EN S PHOTOTRANSiSTOR OPTOCOUPLER -=^-6 3 Package Dimensions in Inches mm 1 343ÍB71 3»(BS) 138(3.5) 130(33) - Ï - (0 5) f Ita 142(36) 122(3 I) 1 E Œ E 11 H " ( 2 $4) Spaong


    OCR Scan     		PDF fl23SbOS 00272flb CATH00E transistor s0014 S0014

    Untitled

    Abstract: No abstract text available
    Text: [ s O OPTOELECTRONICS I— PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCHES ? D EÌ ? + ►j T£4- : 3 15- r 103 :2 6 NCM 122 2 l 0 1 1 t 28-J 17 A p ertu re Test M ax W id th C o n d itio n s ’ c (ONI (m A b v ceo W id th (V) R a tin g Num ber (m m ) L E D /S en so r


    OCR Scan     		PDF H21A1 M0C70P) M0C70P:

    1RFD123

    Abstract: IRFD 123R fd120 IRFD 120 IRFD 123
    Text: IRFD120/121/122/123 IRFD 12OR/121R/122R/123R HARRIS N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Package Features 4 -P IN DIP TOP VIEW • 1.3A and 1.1A, 80V - 100V • rDS on = 0 .3 0 ii and 0 .4 0 fi • Single Pulse Avalanche Energy Rated*


    OCR Scan     		PDF IRFD120/121/122/123 12OR/121R/122R/123R IRFD120, IRFD121, IRFD122, IRFD123 IRFD120R, IRFD121R, IRFD122R, IRFD123R 1RFD123 IRFD 123R fd120 IRFD 120 IRFD 123

    LM322N

    Abstract: transistor t128 LM2905 LM3905 Dearborn Electronics 28V relay LIMING relay H10C LM122 LM122H
    Text: LM122/LM322/ LM3905 N a t i o n a l S e m i c o n d u c t o r LM 122/LM322/LM3905 Precision Timers General Description The LM122 series are precision timers that offer great ver­ satility with high accuracy. They operate with unregulated supplies from 4.5V to 40V while maintaining constant timing


    OCR Scan     		PDF LM122/LM322/LM3905 LM122 TL/H/7768-30 tl/h/7768-31 TL/H/7768-32 TL/H/7768-33 bSG1124 LM322N transistor t128 LM2905 LM3905 Dearborn Electronics 28V relay LIMING relay H10C LM122H

    BC 148 transistor

    Abstract: transistor BC 147 NPN transistor bc 148 bc 147 transistor of transistor bc 148 bc 148 npn transistor S1000 Siemens 8C121 transistor bc 148 bc 149 transistor
    Text: .25C D • MSIEG ■ _ 023SbOS GQGMCH? *? W ~/l NPN Silicon Transistors SIEMENS AKTIENGESELLSCHAF C121 i B C 122 ! - B C 123 Î BC 121, BC 122, and BC 123 are miniature epitaxial NPN silicon planar transistors in U 32


    OCR Scan     		PDF 023SbOS BC1211) BC-121 Q60203-Q60203-Q60203-Q60203-Q60203-Q60203 Q60203-Q60203 Q60203 bc121. bc122, bc123 BC 148 transistor transistor BC 147 NPN transistor bc 148 bc 147 transistor of transistor bc 148 bc 148 npn transistor S1000 Siemens 8C121 transistor bc 148 bc 149 transistor

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


    OCR Scan     		PDF

    MC1112

    Abstract: LTED MD1122 MD11 MD1120 MD1120F MD1121 MD1127 MQ1120
    Text: MDI 120, MDI 120F SILICON MDI121 MDI 122 MQ1120 MULTIPLE SILICON ANNULAR TRANSISTORS NPN SILICON MULTIPLE TRANSISTORS . . . designed fo r use as d iffe r e n tia l a m p lifie rs , dua l general-purpose a m p lifie rs, f r o n t end d e te c to rs and te m p e ra tu re com pensa tion


    OCR Scan     		PDF MD1120, MD1120F MD1121 MD1122 MQ1120 MD1120 MD1120F MDT121 MD1122) MC1112 LTED MD11 MD1127 MQ1120