Power MOSFET in a HEXDIP package
Abstract: TA17401 IRFD120 TB334
Text: IRFD120 Data Sheet July 1999 1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET • 1.3A, 100V • rDS ON = 0.300Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics
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IRFD120
TB334
TA17401.
Power MOSFET in a HEXDIP package
TA17401
IRFD120
TB334
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BUZ72A
Abstract: TA17401 TB334
Text: BUZ72A Data Sheet December 2001 9A, 100V, 0.250 Ohm, N-Channel Power MOSFET Features • 9A, 100V This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,
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BUZ72A
TA17401.
O-220Aopment.
BUZ72A
TA17401
TB334
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irfd120
Abstract: No abstract text available
Text: IRFD120 Data Sheet Title FD 0 bt 3A, 0V, 00 m, an- 1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET Features This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are
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IRFD120
TB334
irfd120
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BUZ72A
Abstract: TA17401 TB334
Text: BUZ72A Data Sheet June 1999 9A, 100V, 0.250 Ohm, N-Channel Power MOSFET Features This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching
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BUZ72A
TA17401.
BUZ72A
TA17401
TB334
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IRFD120
Abstract: TA17401 TB334
Text: IRFD120 Data Sheet January 2002 1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET Features • 1.3A, 100V This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are
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IRFD120
IRFD120
TA17401
TB334
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-INTERSIL
MS-012AA
MO-153AA
RF1K49090
RF1K49093
RF1K49092
ITF87056DQT
ITF87072DK8T
ITF87008DQT
RF1K49223
65e9 transistor
transistor 75307D
Transistor 65e8
SD MOSFET DRIVE DATASHEET 4468 8 PIN
G40N60
RHR15120 equivalent
10n120bnd
76107d
transistor 76121D
emerson three phase dc motor driver service note
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IRFD123
Abstract: IRFD120 HARRIS IRFD120 IRFD121 IRFD122 TA17401 TB334
Text: IRFD120, IRFD121, IRFD122, IRFD123 Semiconductor 1.3A and 1.1A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 1.3A and 1.1A, 80V and 100V • Linear Transfer Characteristics These are advanced power MOSFETs designed, tested, and
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IRFD120,
IRFD121,
IRFD122,
IRFD123
IRFD123
IRFD120 HARRIS
IRFD120
IRFD121
IRFD122
TA17401
TB334
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BUZ72A
Abstract: mosfet .5a 100v
Text: BUZ72A Data Sheet [ /Title BUZ7 2A /Subject (9A, 100V, 0.250 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark June 1999 9A, 100V, 0.250 Ohm, N-Channel Power MOSFET Features
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BUZ72A
O220AB
TA17401.
BUZ72A
mosfet .5a 100v
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BU272A
Abstract: BUZ72A
Text: interrii BUZ72A Data Sheet June 1999 9A, 100V, 0.250 Ohm, N-Channel Power MOSFET PART NUMBER BU272A PACKAGE TO-220AB BRAND BUZ72A NOTE: When ordering, use the entire part number. 2262.2 Features • 9A, 100 V This is an N-Channel enhancement mode silicon gate power
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BUZ72A
TA17401.
BU272A
O-220AB
BUZ72A
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Untitled
Abstract: No abstract text available
Text: IR FD 120 S e m iconductor Data Sheet July 1999 1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET • 1.3A, 100V • • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature
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TB334
TA17401.
IRFD120
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Untitled
Abstract: No abstract text available
Text: BUZ72A Semiconductor Data Sheet June 1999 9A, 100 V, 0.250 Ohm, N-Channel Power MOSFET File Number 2262.2 Features • 9A, 100V This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,
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PDF
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BUZ72A
TA17401.
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IRFD121
Abstract: TA17401 IRFD120 IRFD122 IRFD123 TB334 ES36 rfd12 RFD120
Text: tyvvys S IRFD120, IRFD121, IRFD 122, IRFD 123 S e m ico n d ucto r y y 1.3A and 1.1 A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 1.3A and 1.1 A, 80V and 100V • Linear Transfer Characteristics These are advanced power MOSFETs designed, tested, and
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IRFD121,
TB334
IRFD121
TA17401
IRFD120
IRFD122
IRFD123
TB334
ES36
rfd12
RFD120
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