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    Untitled

    Abstract: No abstract text available
    Text: SIEMENS AKTIENGESELLSCHAF LOE ]> • 023SbOS G D S m ? S M7D I1SIE6 SIEMENS Transistoren Transistors AIGaAs/GaAs HEMTs AIGaAs/GaAs HEMTs Characteristics TA = 25° C Maximum Ratings E mW 9m mS 70 180 40 ¿> P o Type 70 180 40 -3.0.0 60 180 50 70 200 40


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    PDF 023SbOS CGY50 OT-143 CGY40 CLY10 CGY52

    transistor Siemens 14 S S 92

    Abstract: transistor 115 47e
    Text: I 023SbOS 0020014 3 El SIEG SIEMENS AKTIENGESELLSCHAF 47E » T-21-Z5 BS 107 SIPMOS Small-Signal Transistor Vos /„ = 200 V =0.13 A flbs o n = 26 Q • N channel • Enhancement mode • Package: TO-92') "type Ordering code for version on tape Ordering code


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    PDF 023SbOS T-21-Z5 Q67000-S078 Q67000-S060 chap60 235b05 transistor Siemens 14 S S 92 transistor 115 47e

    SBV566

    Abstract: hall generator K2488 Hall Siemens sbv 566 siemens hall ferrite P Ferrite Siemens Siemens Hall siemens hall generator
    Text: D • 023SbOS Q01L373 1 ISIE6 Ferrite Mounted Hall Generator SBV 566 SIEMENS AKTIEN6ESELLSCHAF - Features _LL • Compact size • High sensitivity J= = Q □2.WW»7.S- Typical ap p licatio n s • Current sensing • Position sensing - 12.1


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    PDF 023SbOS Q01L373 20Rem SBV566 hall generator K2488 Hall Siemens sbv 566 siemens hall ferrite P Ferrite Siemens Siemens Hall siemens hall generator

    BC 179

    Abstract: transistor af 178 BC179 BC178B Q62702-C685 TI-5045 BC179E C154 TRANSISTOR BC 177 transistor
    Text: 2SC ì> • 023SbOS O D Q m iS 7 H S I E 6 ¿pc xj*tLL^ —- jO D '*y* <Ky PNP Silicon Transistors * " BC 177 -S IE M E N S AKTIENGESELLSCHAF -BC179 BC 177, BC 178, and BC 179 are epitaxial PNP silicon planar transistors in TO 18 case


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    PDF 023SbOS --------------------------------BC179 62702-C Q62702-C141 62702-C142 Q62702-C685 62702-C153 62702-C154 62702-C686 BC 179 transistor af 178 BC179 BC178B TI-5045 BC179E C154 TRANSISTOR BC 177 transistor

    TMT Isolator

    Abstract: BR306 dioda switching photo transistor til 78 SFH609 F4183
    Text: SIEMENS AKTIENGESELLSCHAF M7E D • 023SbOS D D 2 7 2 m S ■ SIEG 1=41-83 SIEMENS SFH609 SERIES HIGH RELIABILITY PHOTOTRANSISTOR OPTOCOUPLER Package D im ensions in Inches m m 307(7 6) .291 {7 4) 35616 Sì 248(6 3) E Œ E 3 3 3 ANOCE [T k CATHODE [ Ï NCH


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    PDF fi23SbDS D027214 F41-83 SFH609 Vceo90V E52744 TMT Isolator BR306 dioda switching photo transistor til 78 F4183

    SFH401-2

    Abstract: SFH401-4 sfh 910 2SC300 SFH401-3 SFH401 T018 marking s15 diode 0DE7371 sfh4012
    Text: SIEMENS AKTIENGESELLSCHAF 47E D • 023SbOS S IE M E N S DDE7371 ñ «ISIE6 SFH 401 SERIES GaAs INFRARED EMITTER -r-m-u Package Dimensions in Inches mm *“ .117(4 75) .181 (4.6) ~\ 1 - f i) A S .A ^ / 0.10 (254) t 216(5.» ¿11 (5.35) Cathode FEATURES Maximum Ratings


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    PDF 235bOS 0DE7371 SFH401 SFH401-2 SFH401-4 sfh 910 2SC300 SFH401-3 SFH401 T018 marking s15 diode sfh4012

    DIN 50014 STANDARD

    Abstract: C67078-A1610-A2 DIN 50014 BUZ67 BV EI 301 siemens T bv
    Text: ÔÔD D • 88D 023SbOS 0014714 2 « S I E G 14714 D 'T~''37~J3 BUZ67 ^SIEMENS AKTIEN6ESELLSCHAF_ Main ratings N-Channel Drain-source voltage Continuous drain current Draln-source on-reslstance Description Case - 400 V = 9,6 A h ^DS OH = 0,4 S i


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    PDF 23sb0s 00147m BUZ67 SBUZ67 C67078-A1610-A2 fl235bG5 00147n DIN 50014 STANDARD C67078-A1610-A2 DIN 50014 BUZ67 BV EI 301 siemens T bv

    Untitled

    Abstract: No abstract text available
    Text: bOE D • 023SbOS D04bSSE 4D5 m s i E G SIEMENS SFH 4212 IRED T 0 1 8 PACKAGE rillc SIEMENS AKTIENGESELLSCHAF P a cka g e D im e n sio n s in mm FEATURES M a xim u m R atings * In G a A s P /ln P -IR E D 60 mA Forward Current DC lF .


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    PDF 023SbOS D04bSSE

    Untitled

    Abstract: No abstract text available
    Text: bOE ]> m 023SbOS 004b221 CHb • SIEÛ SIEMENS LB 5410-HO Blue TVA 5 mm LED Lamp SIEMENS AKTIENGESELLSCHAF LED Lamps Package Dimensions in inches (mm) Maximum Ratings FEATURES • Pure Blue Light (480 nm) • Clear T r /* (5 mm) Plastic Package • 1" Minimum Lead Length


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    PDF 023SbOS 004b221 5410-HO

    S498

    Abstract: BSS97 BSS95 BSS125 siemens 230 92 BSS 130 BSS 97 s484 S458 BSS components
    Text: <IENENS AKTIEN6ESELLSCHAF 03E D • 023SbOS 001Sb37 4 BISIE6 T^£7~2S' Kleinsignaltransistoren Small-Signal Transistors N-Kanal Anreicherungstypen N channel enhancem ent types K S max) V ti(max) rriA ft P,ot mW G ehäuse P ackage SBS SCS Bestellnummer Ordering co d e


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    PDF 023SbOS lSb37 Q62702- BSS981' BSS1381Â OT-23 BSS3951Â O-202 BSS100 BSS123 S498 BSS97 BSS95 BSS125 siemens 230 92 BSS 130 BSS 97 s484 S458 BSS components

    Hall Siemens sbv 525

    Abstract: K2487 Hall Siemens hall generator siemens hall generator siemens hall probe siemens sbv
    Text: 2^ T> • 023SbOS Q01b3?l ô H S I E 6 Field Probe for Measurements in Small Gaps S B V 525 SIEMENS AKTIENGESELLSCHAF - The S B V 525 is a hall generator of InAs semiconductor material designed for measuring magnetic fields in small gaps. S B V 5 25


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    PDF 023SbOS Q01b3 4099-V TCV20 Hall Siemens sbv 525 K2487 Hall Siemens hall generator siemens hall generator siemens hall probe siemens sbv

    BD 862

    Abstract: No abstract text available
    Text: " 2SC D • 023SbOS 0004417 1 « S I E 6 r T-33“31. PNP Silicon Darlington Transistors j BD 862 BD 864 SIEMENS AKTIENGESELLSCHAF ° 80866 E p ib ase p o w e r d a rlin g to n tra n sisto rs 15 W BD 862, BD 864, and BD 866 are monolithic silicon PN P epibase power darlington transistors


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    PDF 023SbOS F--03 DQG4420 BD 862

    DIODE 3LU

    Abstract: D959 Q62702-D961 Q62702-D959 3lu diode BD 862 Diode 864
    Text: " 2SC D • 023SbOS 0004417 1mSIEG r T-33“31. ; PNP Silicon Darlington Transistors SIEMENS Epibase BD 862 AKTIENGESELLSCHAF ° - ! p o w e r d arlin g to n transistors 1 5 W | BD 8 6 2 , BD 8 6 4 , and BD 8 6 6 are monolithic silicon PNP epibase power darlington transistors


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    PDF 023SbOS -50V- Tmm1S25Â DQG4420 DIODE 3LU D959 Q62702-D961 Q62702-D959 3lu diode BD 862 Diode 864

    101F

    Abstract: ACY23 ACY23V ACY32 ACY32V Q60103-Y23-E Q60103-Y23-F Q60103-Y32-E Q60103-Y32-F Q62901-B1
    Text: 2SC D • 023SbOS 0004041 4 PNP Transistors for AF Input Stages SIEMENS AKTIENGESELLSCHAF ISIE6 1 5C 04041 D ACY23 ACY32 ACY 23 and ACY 32 are alloyed germanium PNP transistors in 1 A 3 DIN 41871 case similar to T0-1 . All leads are electrically insulated from the case. The collector terminal


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    PDF 00QMQ41 ACY23 ACY32 Q60103-Y23-E Q60103-Y23-F Q60103-Y32-E Q60103-Y32-F Q62901-B1 fl23SbQS 000404b 101F ACY23V ACY32V Q62901-B1

    k 942

    Abstract: K942 N 2904 ic 2904 N2905 2904 d 2905 2N2904 2N2904A Q62702-F65
    Text: 2SC ]> • 023SbOS 00040=52 'î H S I E 6 ‘ *7_ / " i/ * / 7 PNP Silicon Planar Transistors 2 N 2904 2 N 2905 - SIEMENS AKTIENGESELLSCHAF -2 N 2904 and 2 N 2905 are epitaxial PNP silicon planar transistors in TO 39 case 5 C 3 DIN 41873 . The collector is electrically connected to the case. The transistors are


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    PDF Q62702-F65 Q62702-F66 C-30V 103mA lfE-20 053SbOS -2N2904A k 942 K942 N 2904 ic 2904 N2905 2904 d 2905 2N2904 2N2904A Q62702-F65

    BC 148 transistor

    Abstract: transistor BC 147 NPN transistor bc 148 bc 147 transistor of transistor bc 148 bc 148 npn transistor S1000 Siemens 8C121 transistor bc 148 bc 149 transistor
    Text: .25C D • MSIEG ■ _ 023SbOS GQGMCH? *? W ~/l NPN Silicon Transistors SIEMENS AKTIENGESELLSCHAF C121 i B C 122 ! - B C 123 Î BC 121, BC 122, and BC 123 are miniature epitaxial NPN silicon planar transistors in U 32


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    PDF 023SbOS BC1211) BC-121 Q60203-Q60203-Q60203-Q60203-Q60203-Q60203 Q60203-Q60203 Q60203 bc121. bc122, bc123 BC 148 transistor transistor BC 147 NPN transistor bc 148 bc 147 transistor of transistor bc 148 bc 148 npn transistor S1000 Siemens 8C121 transistor bc 148 bc 149 transistor

    1072B

    Abstract: 1072
    Text: -L¡\ SIEMENS AKTIEN6ESELLSCHAF 47E D • 023SbOS 0027=107 1 « S I E G B 1060 Features: • TO metal-glass housing • type 60 material • high permissible power dissipation Application: • automatic street lamp switching • burner controls B 1072 Features:


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    PDF 023SbOS 1072B 1072

    ic 2904

    Abstract: N2905
    Text: 2SC T> m 023SbOS 00040=52 'î « S I E G “ _ / ~ + 7 *'/7 2 N 2904 2 N 2905 PNP Silicon Planar Transistors - SIEMENS AKTIENGESELLSCHAF - 2 N 2 9 0 4 and 2 N 2 9 0 5 are epitaxial PNP silicon planar transistors in TO 39 case 5 C 3 DIN 41 8 7 3 . The collector is electrically connected to the case. The transistors are


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    PDF 023SbOS ic 2904 N2905

    AF4505

    Abstract: transistor BF 502 Q U 31U transistor s250
    Text: ESC D • 023SbOS ÛQQ45GS T BISIEG ; 7^-5/' 2 / NPN Silicon RF Transistor SIEMENS BF502 A K T I E N G E S E L L S C H A F >4505 0 - | BF 5 0 2 is an NPN silicon planar RF transistor in TO 9 2 plastic package 1 0 A 3 D I N 4 1 86 8 .


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    PDF 023SbOS QQ45GS BF502 AF4505 transistor BF 502 Q U 31U transistor s250

    Germanium power

    Abstract: gpb19
    Text: 2SC D Bi 023SbOS DÜQ4QÖ3 ^ M S I Z G PNP Germanium UHF Transistor A F2 8 9 _ SIEMENS AKTIENGESELLSCHAF - ~ f-3 l-D 7 AF 2 8 9 is a germanium PNP UHF Planartransistor with passivated surface in low-capacitance 5 0 B 3 DIN 4 1 8 6 7 plastic package similar to T 0 119. This transistor is particularly intended


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    PDF 023SbOS Germanium power gpb19

    smd transistor WF

    Abstract: transistor smd wf TRANSISTOR SMD a43 SMD transistor JD va5 smd 4E smd diode transistor t5c smd t5c
    Text: SIEMENS A K T I EN G E S E LL S C H AF 4?E D • 023SbOS S IE M E N S QD27317 2 *SIE6 SFH6106 2.8 kV TRIOS* OPTOCOUPLERS HIGH RELIABILITY Package Dimensions mm D E S C R IP T IO N * Isolation Test Voltage: 2800 V * High Current Transfer Ratios at 10 mA: 40-320%


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    PDF GGP7317 35max- smd transistor WF transistor smd wf TRANSISTOR SMD a43 SMD transistor JD va5 smd 4E smd diode transistor t5c smd t5c

    transistor k 975

    Abstract: c 879 transistor afe 1000 BD880 darlington bd 876 BD876 d966 transistor bd 975 transistor BD878 BD 875
    Text: 2SC » • 023SbOS 0QGH421 3 ■ S I E 6 - ' NPN Silicon Planar Darlington Transistors SIEMENS AKTIEN6ESELLSCHAF 21 T-33-29 BD 875 BD 877 BD 879 ° BD 875, BD 877, and BD 879 are epitaxial NPN silicon planar darlington transistors in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . These darlington transistors


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    PDF 023SbOS T-33-29 Q62702-D902 Q62702-D903 Q62702-D904 Q62902-B63 Q62902-B62 25imi BD977 transistor k 975 c 879 transistor afe 1000 BD880 darlington bd 876 BD876 d966 transistor bd 975 transistor BD878 BD 875

    Untitled

    Abstract: No abstract text available
    Text: 47E D • 023SbOSG3425&#39;ì 7 ■ S I E G SIEM ENS SIEMENS AKTIENGESELLSCHAF 'T - '- n - t n - c n 5 V-Modulator TDA 5664 Preliminary Data Bipolar 1C Function Monolitic integrated circuit for use as a modulator in the 30 to 860 MHz range. Application Video recorders, cable converters, cable TV head stations,


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    PDF 023SbOS G3425' fl53StiDS DD3424S flS3Sb05 00345Mb B535b05 11MHz

    TIC 122 Transistor

    Abstract: bc 147 B transistor FOR TRANSISTOR BC 149 B BC 148 TRANSISTOR transistor 45 f 122 NPN transistor bc 148 transistor bc 146 BC 148 L transistor bc 148 transistor BC 157
    Text: .2 5 C D • 023SbO S NPN Silicon Transistors GQGMCH? *? MSIEG ■ _ W ~/l SIEMENS A K T IE N G E S E L L S C H A F C 1 2 1 1 ! B C 122 ! - B C 123 Î BC 121, BC 122, and BC 123 are miniature epitaxial NPN silicon planar transistors in U 32


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    PDF 023SbO BC-121 blu122, BC123 0235bOS QQQ41Q3 BC121. BC122, TIC 122 Transistor bc 147 B transistor FOR TRANSISTOR BC 149 B BC 148 TRANSISTOR transistor 45 f 122 NPN transistor bc 148 transistor bc 146 BC 148 L transistor bc 148 transistor BC 157