02n60
Abstract: JD127
Text: motorola sc x s t r s /r 12E D • I b3b7E54 GOflSSb? t f | 'T 1 3 3 - / 2 ? 7”-33-3/ MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN M JD 122 PNP M JD 127 Com plem entary Darlington Pow er Transistors DPAK For Surface M ount A pplications Designed for general purpose am plifier and low speed switching applications.
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b3b7E54
120-TIP
TIP125-T1P127
b3b72S4
MJD122
MJD127
02n60
JD127
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5105 GE
Abstract: BD510 Motorola 506 uniwatt BD507 BD505 BD506 transistor f 506 transistor BD 135 BD506-5
Text: "ib MOTOROLA SC iXSTRS/R F> 6367254 MOTOROLA SC dF | b3b7E54 DGflDtDl 96D CXSTRS/.R F 80601 7 '- J 3 - / 7 BD506 BD508 BD510 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP SILICON AUDIO TRANSISTORS PNP SILICON ANNULAR* 20 - 3 0 - 4 0 VO LTS 10 W ATTS TRANSISTORS
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b3b7E54
BD505.
BD507,
BD509
BD506
BD508
BD510
BDS06.
BD506-1,
5105 GE
Motorola 506
uniwatt
BD507
BD505
transistor f 506
transistor BD 135
BD506-5
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B0508
Abstract: transistor f 506 506-BD 506bd BD506 BD507 uniwatt BD510 80509 BD505
Text: MOTOROLA SC iXST R S/R 6367254 f dF > MOTOROLA SC | b3b7E54 96D CXSTRS/.R F O Gö O t i Ol 80601 D BD506 BD508 BD510 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP SILICON AU DIO TRANSISTORS 20 - 30 - 40 V O LTS PNP SILICON A N N U LA R * 10 W A T T S TRANSISTORS
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b3b7E54
BD505.
BD507,
BD509
BD506.
BD506
506-BD
B0508
transistor f 506
506bd
BD507
uniwatt
BD510
80509
BD505
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MMBT404A
Abstract: No abstract text available
Text: ]>F|b3b7E54 MO TO RO LA SC ÍXSTRS/R F> 6367254 M OT O RO L A SC XSTRS/R □ D flEO E? fi 96D 8 2 0 2 7 . F D t M A XIM U M RATINGS *- 37~ 2 3 Value Sym bol 404 404A Unit Collector-Emitter Voltage VCEO 24 35 Vdc Collector-Base Voltage v CBO 25 40 Vdc Emitter-Base Voltage
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b3b7E54
MMBT404
MMBT404A
OT-23
O-236AA/AB)
MMBT404A
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2N2222A 331
Abstract: 2n2222 -331 2N2222A motorola 2n2222 -331 transistors 2n2222 a 331 2n2222 331 transistors 2n2222 h 331 transistors 2n2222 h 331 2n2222 - 331 2n2222 331
Text: MOTOROLA SC XSTRS/R 12E F 2N2218A 2N2219A 2N2221A 2N2222A 2N5581 2N55S2 Unît 40 40 Vdc Vdc Sym bol 2N2218 2N2219 2N2221 2N2222 Collector-Emitter Voltage v CEO 30 Collector-Base Voltage VCBO 60 75 75 Emrtter*Base Voltage Ve b o 5.0 6.0 6.0 Vdc 'c 800 800 800
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b3b7E54
2N2218
2N2219
2N2221
2N2222
2N2218A
2N2219A
2N2221A
2N2222A
2N2218,
2N2222A 331
2n2222 -331
2N2222A motorola
2n2222 -331 transistors
2n2222 a 331
2n2222 331 transistors
2n2222 h 331 transistors
2n2222 h 331
2n2222 - 331
2n2222 331
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2N3792 MOTOROLA
Abstract: 2N3789 2N3791 MOTOROLA 2N3713 MOTOROLA motorola 2n3789 GG04 2n3792 2N3790 MOTOROLA N3790 2N3790+MOTOROLA
Text: MOTOROLA SC XSTRS/R F 12E D | tj3fe.7aSM GGÖMSG1 T | "7 ^ 3 3 -2 3 2N3789. MOTOROLA SEMICONDUCTOR thru TECHNICAL DATA 2N3792 S IL IC O N PNP POW ER T R A N S IS T O R S 10 A M P E R E . . designed for medium-speed switching and amplifier applications. These devices feature:
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2N3789.
2N3792
2N3789
2N3790)
2N3791,
2N3792)
2N3713
2N3716
2N3701
2N3792 MOTOROLA
2N3791 MOTOROLA
2N3713 MOTOROLA
motorola 2n3789
GG04
2n3792
2N3790 MOTOROLA
N3790
2N3790+MOTOROLA
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MJ16016
Abstract: J160 MJ16014 npn 3778
Text: I : MOTOROLA SC XSTRS/R F 12E 0 | OGaSEM MOTOROLA T | MJ16014 MJ16016 SEMICONDUCTOR TECHNICAL DATA D e s i g n e r ’s D a t a S h e e t 20 A M P E R E NPN SILICON POWER T R A N SISTO R S SW ITCHM ODE III SERIES NPN SILICON POWER TRANSISTORS 4 5 0 V O LT S
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MJ16014
MJ16016
MJ16016
MJ16014for
P-6042
J160
npn 3778
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MRF544
Abstract: No abstract text available
Text: M OT OR OL A SC XSTRS/R F 4bE D b3h7ES4 GQTMTMM fl « f l O T b MOTOROLA • I SEMICONDUCTOR I TECHNICAL DATA M R F544 M RFC 544 The RF Line NPN Silicon H ig h Frequency T ra n sisto rs |q = 4 0 0 m A . . . d e s ig n e d f o r h ig h - fr e q u e n c y a n d m e d iu m a n d h ig h r e s o lu tio n c o lo r v id e o
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mtp2p45
Abstract: TP2P45 45MTP 314B03 HF 1932
Text: MOT OROL A SC XSTRS/R b3b7254 F GDTñbHH 224 • MOTOROLA ■ SEM ICO NDUCTOR TECHNICAL DATA M TP 2P 45 M TP 2P 50 Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r P-Channel Enhancement-Mode Silicon Gate TT These TMOS Power FETs are designed fo r medium voltage,
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b3b7254
MTP2P50
21A-06
O-220AB)
Y145M
221D-02
O-220
Y145M,
AND-02
314B03
mtp2p45
TP2P45
45MTP
HF 1932
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2N4014
Abstract: No abstract text available
Text: 2N4014 MAXIMUM RATINGS Rating Symbol 2N4014 Unit Collector-Emitter Voltage v CEO 40 Vdc Collector-Base Voltage v CBO 80 Vdc Emitter-Base Voltage v EBO 6.0 Vdc Collector Current — Continuous — Peak 'C 1.0 2.0 Ade Total Device Dissipation @ Ta = 25°C Derate above 25°C
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2N4014
2N4014
O-206AA)
b3b7E54
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MJ13080
Abstract: MJ13081 AN-222 DOA107A
Text: Tb MOTOROLA SC -CXSTRS/R F> f 6 3 8 7 2 5 4 M O J O R O L A SÇ DE |b3t.75SM 000107b 5 96D 8 1 0 7 6 X S T R S / R F D T-33-/3 MOTOROLA MJ13080 MJ13081 SEM ICONDUCTOR TECHNICAL DATA ' " ^ É S D e s i g n e r ’ s 'O ì a t a ^ S h e e t á g f c s s * '-
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p6367254
000107b
-T-33-/3
j13080
mj13081
MJ13080
MJ1308T
MJ13081
AN-222
DOA107A
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MTP8N20
Abstract: MTM8N20 221A-06 25CC
Text: MOTOROLA SC XSTRS/R F bflE ]> • b3b7254 GDTflSbfi ÔÔ7 ■ M O T b MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA MTM 8N20 MTP8N20 Designer's Data Sheet P o w e r Field E ffe c t T ran s is to r IM-Channel Enhancem ent-Mode S ilico n Gate T These TMOS Power FETs are designed fo r medium voltage,
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bBb72S4
MTM8N20
MTP8N20
b3b7B54
MTP8N20
221A-06
25CC
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TP8N20
Abstract: 8n20 314B03 MTP8N20
Text: MOTOROLA SC XSTRS/R F MOTOROLA bflE D • b B b V E S 1! GDTflSbfi ÔÔ7 ■ M O T b ■ SEM ICO NDUCTOR TECHNICAL DATA _ M TM 8N20 M T P 8N 2 0 Designer's Data Sheet P o w e r F ie ld E f f e c t T r a n s is to r IM-Channel Enhancement-Mode Silicon Gate
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21A-06
O-220AB)
Y145M
221D-02
O-220
Y145M,
AND-02
314B03
O-220)
TP8N20
8n20
MTP8N20
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s2525
Abstract: No abstract text available
Text: MAXIMUM RATINGS Rating Symbol Value Unit Vdc Collector-Emitter Voltage VCEO 25 Collector-Base Voltage VCBO 25 Vdc Emitter-Base Voltage v EBO 5.0 Vdc Collector Current — Continuous !C 500 mAdc Total Device Dissipation @ T ^ = 25°C Derate above 2 5 T Pd 625
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MPS6560
MPS6562
O-226AA)
b3b7E54
01G3bSQ
s2525
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motorola 6820
Abstract: motorola 7852 motorola 8026 motorola ST 1076 trw 7730 6840 1 motorola ic 8279
Text: MOTOROLA SC 1EE D I b3t.7ESM GGfifiMGl 3 | XSTRS/R F MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA TRW 53001 Se rie s The RF Line M ic r o w a v e Linear P o w e r T ra n sisto rs 7.5 TO 8.5 dB 1 TO 3 GHz 0.8 W ATT M ICRO W AVE LINEAR POWER T R A N SIST O R S
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TW-200
TRW53001
TRW53001
JUNCT10N
motorola 6820
motorola 7852
motorola 8026
motorola ST 1076
trw 7730
6840 1 motorola
ic 8279
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8D438
Abstract: 8D442 8D436 D442 SD436 TRANSISTOR BD 437 BD transistor BD 35 transistor BD434 BD436 MOTOROLA
Text: MOTOROLA SC -CXSTRS/R “Tb FÏ 6 3 6 7 2 5 4 M O T O R O L A SC X S T R S / R F 96 D 80 596 TECHNICAL DATA D 7 r'i3-'/f 4 AMPERE POWER TRANSISTOR PNP SILICON PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR . . . for amplifier and switching applications Complementary
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b3b7E54
BD434,
BD436
BD438,
BD440
BD442
BD433/435/437/439/441.
8D438
8D442
8D436
D442
SD436
TRANSISTOR BD 437
BD transistor
BD 35 transistor
BD434
BD436 MOTOROLA
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motorola 2N2270
Abstract: 2N3947 2N956 MOTOROLA JAN 2N2896 transistor motorola 2n3053 motorola 2N2270 to-18 mm3904 motorola 2N2219 2N4028 MM6427
Text: MOTOROLA SC {XSTRS/ R F> ”ao DE~| h3b7ES4 007b70H 1 T-'*?- / General-Purpose Amplifiers Complementary transistors designed for dc to VHF amplifier and general-purpose switching applications, listed in decreasing order ° f v BR CEO within each package group.
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h3b7E54
007b70E
2N2896
2N3700#
2N2895
2N956
2N2897
2N718
2N2221A#
2N2222AI
motorola 2N2270
2N3947
2N956 MOTOROLA
JAN 2N2896
transistor motorola 2n3053
motorola 2N2270 to-18
mm3904
motorola 2N2219
2N4028
MM6427
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MTP10N15
Abstract: 221A-06 25CC AN569
Text: MO T O R O L A SC XSTRS/R F bôE D fe3b7254 GG'ifl72ti IT T MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet P o w e r Field E ffe c t T ran sisto r IU-Channel Enhancement-Mode Silicon Gate T This TMOS Power FET is designed fo r medium voltage, high
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fe3b7254
MTP10N15
C085-Crss
MTP10N15
221A-06
25CC
AN569
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NS 8002 1151
Abstract: MQ3251A
Text: MOTOROLA SC XSTRS/R F 4bE D • L,3b7254 00=12431 T ■ M O TbTH VZS MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1 DM0 Discrete M ilitary Products PIMP Silicon Dual Quad Sm all-Signal Transistors M D 3251A M D 3251A F (Duals) M H Q 3251A M Q 3251A m in t (Quads)
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3b7254
MIL-S-19500/323
O-116)
NS 8002 1151
MQ3251A
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marking H3t sot23
Abstract: sot-23 marking 7z H3T TIME UNIT MMBFJ310 MMBT404 MMBT918 MMBT404A MOTOROLA 2N marking LG sot-23 7Z SOT23
Text: r DE | t , 3 t , 7 S S 4 sc -c x s t r s / r F} 6367254 MOTOROLA SCCXSTRS/R motorola F 96D 8 2 0 1 2 . i D GflED ia D T ^ ï- â 5 M A X IM U M RA TIN G S Symbol Value Unit Drain-Source Voltage Vos 25 Vdc Gate-Source Voltage Vg S 25 Vdc >G 10 mAdc Rating
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0flE03D
MMBT918
T-31-15
marking H3t sot23
sot-23 marking 7z
H3T TIME UNIT
MMBFJ310
MMBT404
MMBT918
MMBT404A
MOTOROLA 2N
marking LG sot-23
7Z SOT23
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B755
Abstract: MPS911
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR911LT1 MPS911 NPN Silicon High-Frequency Transistors Designed for low noise, wide dynamic range fron t-e nd amplifiers and low-noise VCO's. Available in a surface-mountable plastic package, as well as the popular TO-226AA TO-92 package. This Motorola series of small-signal
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O-226AA
A/500
MMBR911LT1
MPS911
b3b7E54
B755
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PDF
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d5383
Abstract: No abstract text available
Text: - 6 3 6 7 2 5 4 MOTOROLA S C X S T R S / R F MOTOROLA D T-33-35 69D 79944 Order this data sheet by MJ50BX120/D t3t7asl< °D7',‘1l" ) 7 T SEMICONDUCTOR TECHNICAL DATA C MJ50BX120 N P N Silico n Pow er Transistor M odule Energy M anagem ent Series DUAL
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T-33-35
MJ50BX120/D
MJ50BX120
MK145BP,
D5-3833
d5383
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PDF
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Transistor D 799
Abstract: transistor BD 522 transistor motorola 114-8 bd799 TRANSISTOR bd 147 B0801 motorola s 114-8 transistor BD 800 Transistor K 799 1961 30 TRANSISTOR
Text: MOTOROLA sc XSTRS/R F 1SE D I fe,3b?aS4 0 D Ö4 75 7 G | MOTOROLA BD795 BD797 SEMICONDUCTOR TECHNICAL DATA BD799 BD801 PLASTIC HIGH POWER SILICON NPN TRANSISTOR 8 AMPERE POWER TRANSISTOR . . . designed for use up to 3 0 W att audio amplifiers utilizing complementary or quasi complementary circuits.
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BD795
BD797
BD799
BD801
BD797
B0801
BD796
BD801
Transistor D 799
transistor BD 522
transistor motorola 114-8
TRANSISTOR bd 147
motorola s 114-8
transistor BD 800
Transistor K 799
1961 30 TRANSISTOR
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motorola rf device
Abstract: motorola rf Power Transistor vk200-20 MRF224 vk200 VK200 rfc RF POWER TRANSISTOR NPN npn transistor 70 volt RF POWER TRANSISTOR NPN vhf RF POWER TRANSISTOR NPN, motorola
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . . designed for 12.5 Volt VHF large-signal power amplifier applications required in commercial and industrial equipment operating to VHF frequencies. • Specified 12.5 Volt, 175 MHz Characteristics —
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VK200-20/4B,
3b7554
MRF224
b3b7E54
motorola rf device
motorola rf Power Transistor
vk200-20
vk200
VK200 rfc
RF POWER TRANSISTOR NPN
npn transistor 70 volt
RF POWER TRANSISTOR NPN vhf
RF POWER TRANSISTOR NPN, motorola
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