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    IRFD Search Results

    IRFD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ISL9011AIRFDZ Renesas Electronics Corporation Dual LDO with Low Noise, Low IQ, and High PSRR Visit Renesas Electronics Corporation
    ISL9014AIRFDZ-T Renesas Electronics Corporation Dual LDO with Low Noise, Low IQ, and High PSRR Visit Renesas Electronics Corporation
    ISL9014AIRFDZ Renesas Electronics Corporation Dual LDO with Low Noise, Low IQ, and High PSRR Visit Renesas Electronics Corporation
    ISL9000AIRFDZ Renesas Electronics Corporation Dual LDO with Low Noise, Very High PSRR, and Low IQ Visit Renesas Electronics Corporation
    ISL9012IRFDZ-T Renesas Electronics Corporation Dual LDO with Low Noise, Low IQ, and High PSRR Visit Renesas Electronics Corporation
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    IRFD Price and Stock

    Vishay Siliconix IRFD9120PBF

    MOSFET P-CH 100V 1A 4DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFD9120PBF Tube 12,419 2,500
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    • 10000 $0.6572
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    Vishay Siliconix IRFDC20PBF

    MOSFET N-CH 600V 320MA 4DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFDC20PBF Tube 5,543 1
    • 1 $2.99
    • 10 $1.94
    • 100 $2.99
    • 1000 $1.00163
    • 10000 $0.9125
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    Vishay Siliconix IRFD020PBF

    MOSFET N-CH 50V 2.4A 4DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFD020PBF Bulk 5,191 1
    • 1 $2.32
    • 10 $1.487
    • 100 $2.32
    • 1000 $0.7445
    • 10000 $0.64338
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    Vishay Siliconix IRFD210PBF

    MOSFET N-CH 200V 600MA 4DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFD210PBF Bulk 4,751 1
    • 1 $1.93
    • 10 $1.23
    • 100 $1.93
    • 1000 $0.60233
    • 10000 $0.54256
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    RS IRFD210PBF Bulk 2,500
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    • 10000 $0.93
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    Bristol Electronics IRFD210PBF 1,350
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    ComSIT USA IRFD210PBF 4,050
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    New Advantage Corporation IRFD210PBF 1,500 1
    • 1 -
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    • 100 $0.6431
    • 1000 $0.6431
    • 10000 $0.6431
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    Vishay Siliconix IRFD9210PBF

    MOSFET P-CH 200V 400MA 4DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFD9210PBF Bulk 3,202 1
    • 1 $2.43
    • 10 $1.564
    • 100 $2.43
    • 1000 $0.78742
    • 10000 $0.71359
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    Find more IRFD price and stock on Findchips.com

    IRFD Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFD010 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 50V 1.7A 4-DIP Original PDF
    IRFD010 International Rectifier N-Channel HEXDIP, 50 Volt, 0.20 Ohm, 1 Watt Scan PDF
    IRFD010 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFD010 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFD010 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFD010 Unknown FET Data Book Scan PDF
    IRFD010PBF Vishay Semiconductors MOSFET N-CH 50V 1.7A 4-DIP Original PDF
    IRFD010PBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 50V 1.7A 4-DIP Original PDF
    IRFD012 International Rectifier N-Channel HEXDIP, 50 Volt, 0.20 Ohm, 1 Watt Scan PDF
    IRFD012 Unknown FET Data Book Scan PDF
    IRFD012 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFD012 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFD014 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFD014 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 1.7A 4-DIP Original PDF
    IRFD014 International Rectifier Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=1.7A) Scan PDF
    IRFD014 International Rectifier Plastic Package HEXFETs Scan PDF
    IRFD014 International Rectifier HEXFET Power MOSFETs Scan PDF
    IRFD014 International Rectifier HEXFET Power MOSFET Scan PDF
    IRFD014 International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 60V, 1.7A, Pkg Style HEXDIP Scan PDF
    IRFD014 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    ...

    IRFD Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFD014_RC, SiHFD014_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		IRFD014 SiHFD014 AN609, CONFIGURA5-Oct-10 3009m 0416u 6348m 9120m PDF

    IRFD9024

    Abstract: No abstract text available
    Text: IRFD9024, SiHFD9024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V - 60 RDS(on) () • Repetitive Avalanche Rated VGS = - 10 V 0.28 Qg (Max.) (nC) 19 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • For Automatic Insertion


    Original     		IRFD9024, SiHFD9024 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFD9024 PDF

    IRFD9120

    Abstract: No abstract text available
    Text: IRFD9120, SiHFD9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 100 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 18 • For Automatic Insertion Qgs (nC) 3.0 • End Stackable 9.0 • P-Channel Qgd (nC) Configuration


    Original     		IRFD9120, SiHFD9120 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFD9120 PDF

    part marking information vishay irfd110pbf

    Abstract: IRFD120
    Text: PD- 95927 IRFD110PbF • Lead-Free Document Number: 91127 10/27/04 www.vishay.com 1 IRFD110PbF Document Number: 91127 www.vishay.com 2 IRFD110PbF Document Number: 91127 www.vishay.com 3 IRFD110PbF Document Number: 91127 www.vishay.com 4 IRFD110PbF Document Number: 91127


    Original     		IRFD110PbF 12-Mar-07 part marking information vishay irfd110pbf IRFD120 PDF

    part marking information vishay irfd110pbf

    Abstract: No abstract text available
    Text: PD- 95927 IRFD110PbF • Lead-Free Document Number: 91127 10/27/04 www.vishay.com 1 IRFD110PbF Document Number: 91127 www.vishay.com 2 IRFD110PbF Document Number: 91127 www.vishay.com 3 IRFD110PbF Document Number: 91127 www.vishay.com 4 IRFD110PbF Document Number: 91127


    Original     		IRFD110PbF 08-Mar-07 part marking information vishay irfd110pbf PDF

    Untitled

    Abstract: No abstract text available
    Text: PD -9.1272 IRFD224 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements VDSS = 250V RDS on = 1.1Ω ID = 0.63A Description Third Generation HEXFETs from International Rectifier provide the designer


    Original     		IRFD224 08-Mar-07 PDF

    IRFD9210

    Abstract: No abstract text available
    Text: IRFD9210, SiHFD9210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 8.9 Qgs (nC) 2.1 Qgd (nC) 3.9 Configuration • Repetitive Avalanche Rated 3.0 RoHS* • For Automatic Insertion


    Original     		IRFD9210, SiHFD9210 2002/95/EC 18-Jul-08 IRFD9210 PDF

    IRFD310

    Abstract: No abstract text available
    Text: PD -9.1225 IRFD310 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements VDSS = 400V RDS on = 3.6Ω ID = 0.35A Description Third Generation HEXFETs from International Rectifier provide the designer


    Original     		IRFD310 RFD310 IRFD310 PDF

    IRFD210

    Abstract: TB334
    Text: IRFD210 Data Sheet July 1999 0.6A, 200V, 1.500 Ohm, N-Channel Power MOSFET • 0.6A, 200V • rDS ON = 1.500Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics


    Original     		IRFD210 TB334 TA17442. IRFD210 TB334 PDF

    Power MOSFET in a HEXDIP package

    Abstract: TA17401 IRFD120 TB334
    Text: IRFD120 Data Sheet July 1999 1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET • 1.3A, 100V • rDS ON = 0.300Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics


    Original     		IRFD120 TB334 TA17401. Power MOSFET in a HEXDIP package TA17401 IRFD120 TB334 PDF

    IRFD320

    Abstract: TA17404 TB334
    Text: IRFD320 Data Sheet January 2002 0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET Features • 0.5A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		IRFD320 IRFD320 TA17404 TB334 PDF

    IRFD9220

    Abstract: No abstract text available
    Text: IRFD9220 Data Sheet January 2002 0.6A, 200V, 1.500 Ohm, P-Channel Power MOSFET Features • 0.6A, 200V This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		IRFD9220 IRFD9220 PDF

    IRFD210

    Abstract: No abstract text available
    Text: IRFD210 Data Sheet Title FD 0 bt 6A, 0V, 00 m, an- 0.6A, 200V, 1.500 Ohm, N-Channel Power MOSFET Features This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are


    Original     		IRFD210 TB334 IRFD210 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFD220 Data Sheet Title FD 0 bt 8A, 0V, 00 m, July 1999 0.8A, 200V, 0.800 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		IRFD220 TB334 PDF

    IRFD214

    Abstract: n mosfet low vgs
    Text: IRFD214, SiHFD214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration • Repetitive Avalanche Rated 2.0 RoHS* • End Stackable COMPLIANT


    Original     		IRFD214, SiHFD214 2002/95/EC 18-Jul-08 IRFD214 n mosfet low vgs PDF

    s0918

    Abstract: IRFD9220
    Text: IRFD9220, SiHFD9220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V - 200 RDS(on) (Ω) 1.5 Qg (Max.) (nC) 15 Qgs (nC) 3.2 Qgd (nC) 8.4 Configuration RoHS* • For Automatic Insertion COMPLIANT • End Stackable • P-Channel


    Original     		IRFD9220, SiHFD9220 2002/95/EC 18-Jul-08 s0918 IRFD9220 PDF

    IRFD220

    Abstract: SiHFD220-E3 IRFD220PBF
    Text: IRFD220, SiHFD220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.80 Qg (Max.) (nC) 14 Qgs (nC) 3.0 Qgd (nC) 7.9 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		IRFD220, SiHFD220 2002/95/EC 18-Jul-08 IRFD220 SiHFD220-E3 IRFD220PBF PDF

    IRFD 110

    Abstract: IRFD 640
    Text: Tem ic IRFDllO N-Channel Enhancement-Mode Transistor Product Summaiy V BR DSS (V) r DS(on) (Œ ) 100 0.60 4-P in D IP G Œ s tr Id (A) 1.0 U a <Jt Top View Ô s N -C hannel M O S F E T Absolute Maximum Ratings (T^ = 25°C Unless Otherwise Noted)


    OCR Scan     		P-36735-- IRFD 110 IRFD 640 PDF

    irfd9120

    Abstract: IRFD9123 IRFD9123 Siliconix
    Text: Tem ic IRFD9120/9123 Siliconix P-Channel Enhancement-Mode Transistors Product Summary P a rt N um ber V BR DSS (V) r DS(on) ( ß ) I d (A) IRFD9120 -100 0.60 - 1 .0 IRFD9123 -6 0 0.80 -0.8 S o 4-Pin DIP G 0 - 1|— HE • u Top View D D P-C hannel M O S F E T


    OCR Scan     		IRFD9120/9123 IRFD9120 IRFD9123 IRFD9120 F-36852-- 1100M P-36852-- IRFD9123 IRFD9123 Siliconix PDF

    IRFD9110

    Abstract: IRFD9112
    Text: MOTOROLA SC XSTRS/R F 12E D | t3b7SSM OOflbti? 7 | IRFD9110 IRFD9112 FET DIP C A S E 370 01, ST YLE 1 M AXIM UM RATINGS Symbol Rating IRFD9112 IRFD9110 Unit Drain-Source Voltage Voss -1 0 0 Vdc Drain-Gate Voltage Rq s = 20 ^ Vd g r -1 0 0 Vdc 20 Vdc Gate-Source Voltage


    OCR Scan     		IRFD9110 IRFD9112 IRFD911Q IRFD9112 PDF

    385H

    Abstract: IRFD120 dual mosfet marking 506
    Text: International S Rectifier PD-9.385H IRFD120 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable 175°C Operating Temperature Fast Switching Ease of Paralleling VDSS= 100V R DS on =


    OCR Scan     		IRFD120 385H IRFD120 dual mosfet marking 506 PDF

    IRFD220

    Abstract: Transistors c-3229 C 3229 IRFD221 D220 IRFD222 IRFD223
    Text: - Standard Power MOSFETs File Number IRFD220, IRFD221, IRFD222, IRFD223 23117 Power MOS Field-Effect Transistors N -C H A N N EL ENHAN C EM EN T MODE


    OCR Scan     		IRFD220, IRFD221, IRFD222, IRFD223 92CS-3374I IIRFD221, IRFD223 IRFD220 Transistors c-3229 C 3229 IRFD221 D220 IRFD222 PDF

    marking B33 diode

    Abstract: MOSFET IRFd9120 IRFD9120
    Text: IINR 4ÔSSMS2 OOlSObH b33 International i«R Rectifier PD-9.3311 IRFD9120 HEXFET Power M O S F E T bSE D INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable P-Channel 175°C Operating Temperature


    OCR Scan     		IRFD9120 l50Ktl marking B33 diode MOSFET IRFd9120 IRFD9120 PDF

    IRFD110

    Abstract: irfd113 328h IRFD11Q k 3525 MOSFET S402 FD113 fd110 IRFD110/111/112/113
    Text: HE D | 4055452 QQOaBbfl S | Dgta Sheet N q p D.g 328H INTERNATIONAL R E C T IF IE R T-35-25 IN T E R N A T IO N A L R E C T IF IE R llO R l HEXFET TRANSISTORS IRFD11Q N-CHANNEL IRFD113 HEXDIP 1-WATT RATED POWER MOSFETs 4 PIN, DUAL-IN-LINE PLASTIC PACKAGE


    OCR Scan     		T-35-25 IRFD11Q IRFD113 C-121 IRFD110, FD113 T-35-25 IRFD110 328h k 3525 MOSFET S402 fd110 IRFD110/111/112/113 PDF