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    BFP520 Price and Stock

    Rochester Electronics LLC BFP520FH6327XTSA1

    BFP520 - LOW-NOISE SI TRANSISTOR
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    DigiKey BFP520FH6327XTSA1 Bulk 386,000 1,854
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    Rochester Electronics LLC BFP520FE6327

    LOW-NOISE SI TRANSISTOR
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    DigiKey BFP520FE6327 Bulk 7,112 1,888
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    Infineon Technologies AG BFP520H6327XTSA1

    RF TRANS NPN 3.5V 45GHZ SOT343-4
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    DigiKey BFP520H6327XTSA1 Cut Tape 6,003 1
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    BFP520H6327XTSA1 Digi-Reel 6,003 1
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    BFP520H6327XTSA1 Reel 6,000 3,000
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    Avnet Americas BFP520H6327XTSA1 Reel 8 Weeks 6,000
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    Mouser Electronics BFP520H6327XTSA1 7,858
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    Verical BFP520H6327XTSA1 8,704 62
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    BFP520H6327XTSA1 5,735 214
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    Arrow Electronics BFP520H6327XTSA1 8,704 1
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    Newark BFP520H6327XTSA1 Cut Tape 5
    • 1 $0.397
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    Rochester Electronics BFP520H6327XTSA1 3,895 1
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    TME BFP520H6327XTSA1 2,261 1
    • 1 $0.453
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    Chip1Stop BFP520H6327XTSA1 Cut Tape 5,735
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    EBV Elektronik BFP520H6327XTSA1 9 Weeks 3,000
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    Infineon Technologies AG BFP-520F-E6327

    RF TRANS NPN 3.5V 45GHZ 4TSFP
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    DigiKey BFP-520F-E6327 Digi-Reel 1
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    BFP-520F-E6327 Reel
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    Infineon Technologies AG BFP520E6327BTSA1

    RF TRANS NPN 3.5V 45GHZ SOT343-4
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BFP520E6327BTSA1 Reel 6,000
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    Find more BFP520 price and stock on Findchips.com

    BFP520 Datasheets (21)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BFP520 Infineon Technologies Si, SiGe RF Transistors, fT = 24 to 70 GHz; Package: PG-SOT343-4; VCEO (max): 2.5 V; IC(max): 40.0 mA; Ptot (max): 100.0 mW; fT (typ): 45.0 GHz; F (typ): 0.95 dB; Original PDF
    BFP520 Infineon Technologies NPN Silicon RF transistor for low noise, highest gain amplifiers Original PDF
    BFP520 Infineon Technologies NPN SILICON RF TRANSISTOR Original PDF
    BFP520 Philips Semiconductors NPN 9 GHz Wideband Transistor Original PDF
    BFP520 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BFP520 Siemens NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V) Original PDF
    BFP520 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BFP520 Unitra Cemi Transistor Scan PDF
    BFP520E6327 Infineon Technologies TRANS GP BJT NPN 2.5V 0.04A 4 Original PDF
    BFP520E6327BTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANS NPN RF 2.5V SOT-343 Original PDF
    BFP520E6825 Infineon Technologies TRANS GP BJT NPN 2.5V 0.04A 4 Original PDF
    BFP520F Infineon Technologies Si, SiGe RF Transistors, fT = 24 to 70 GHz; Package: PG-TSFP-4; VCEO (max): 2.5 V; IC(max): 40.0 mA; Ptot (max): 100.0 mW; fT (typ): 45.0 GHz; F (typ): 0.95 dB; Original PDF
    BFP520F Infineon Technologies NPN Silicon RF Transistor Original PDF
    BFP520F Infineon Technologies NPN Silicon RF transistor for low noise, highest gain amplifiers in NEW thin small flatlead package TSFP-4 Original PDF
    BFP520FE6327 Infineon Technologies TRANS GP BJT NPN 2.5V 0.04 Original PDF
    BFP 520F E6327 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR RF NPN 2.5V TSFP-4 Original PDF
    BFP520FE6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR RF NPN 2.5V TSFP-4 Original PDF
    BFP520FH6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANS RF NPN 3.5V 40MA 4TSFP Original PDF
    BFP520FH6327XTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANS RF NPN 3.5V 40MA 4TSFP Original PDF
    BFP520H6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANS RF NPN 3.5V 40MA SOT343 Original PDF

    BFP520 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BFP520F

    Abstract: BFP420F TSFP-4 transistor BF 235
    Text: BFP520F NPN Silicon RF Transistor* • For highest gain low noise amplifier 3 at 1.8 GHz and 2 mA / 2 V 2 4 1 Outstanding Gms = 23 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz • Transition frequency f T = 45 GHz • Gold metallisation for high reliability


    Original     		PDF BFP520F BFP520F BFP420F TSFP-4 transistor BF 235

    IC 7481 pin configuration

    Abstract: IC 7481 ev 2816 01177 ic rom 2816 BFP520 BFP520 application notes k 3683 transistor
    Text: SIEGET 45 BFP520 NPN Silicon RF Transistor 3  For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Gms = 23 dB Noise Figure F = 0.95 dB  For oscillators up to 15 GHz 2  Transition frequency fT = 45 GHz 1 VPS05605  Gold metallization for high reliability


    Original     		PDF BFP520 VPS05605 OT343 50Ohm 45GHz -j100 Sep-26-2001 IC 7481 pin configuration IC 7481 ev 2816 01177 ic rom 2816 BFP520 BFP520 application notes k 3683 transistor

    AN051A

    Abstract: transistor cross ref BFP520 application notes AN051 BFP520 2500G Ghz dB transistor N051 amplifier TRANSISTOR 12 GHZ amplifier TRANSISTOR 14 GHZ
    Text: A pp l ic a t io n N o t e, R e v . 2. 0 , J a n. 2 00 7 A p p li c a t i o n N o t e N o . 0 5 1 SIEGET45 - Low Noise Amplifier with BFP520 T r a n s i s t o r a t 1 .9 G H z R F & P r o t e c ti o n D e v i c e s Edition 2007-01-08 Published by Infineon Technologies AG


    Original     		PDF SIEGET45 BFP520 AN051A transistor cross ref BFP520 application notes AN051 BFP520 2500G Ghz dB transistor N051 amplifier TRANSISTOR 12 GHZ amplifier TRANSISTOR 14 GHZ

    BFP520F

    Abstract: No abstract text available
    Text: SIEGET 45 BFP520F NPN Silicon RF Transistor Preliminary data XYs  For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V 3 Outstanding Gms = 23 dB 2 4 Noise Figure F = 0.95 dB 1  For oscillators up to 15 GHz  Transition frequency fT = 45 GHz TSFP-4


    Original     		PDF BFP520F Aug-10-2001 BFP520F

    BFP520

    Abstract: VPS05605
    Text: SIEGET 45 BFP520 NPN Silicon RF Transistor 3  For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Gms = 23 dB Noise Figure F = 0.95 dB  For oscillators up to 15 GHz 2  Transition frequency fT = 45 GHz 1 VPS05605  Gold metallization for high reliability


    Original     		PDF BFP520 VPS05605 OT343 50Ohm 45GHz -j100 Aug-09-2001 BFP520 VPS05605

    Untitled

    Abstract: No abstract text available
    Text: BFP520F Low Noise Silicon Bipolar RF Transistor • For highest gain and low noise amplifier 3 Outstanding Gms = 22.5 dB at 1.8 GHz 2 4 1 Minimum noise figure NFmin = 0.95 dB at 1.8 GHz • For oscillators up to 15 GHz • Transition frequency fT = 45 GHz


    Original     		PDF BFP520F AEC-Q101

    BFP520F

    Abstract: No abstract text available
    Text: SIEGET 45 BFP520F NPN Silicon RF Transistor Preliminary data XYs  For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V 3 Outstanding Gms = 23 dB 2 4 Noise Figure F = 0.95 dB 1  For oscillators up to 15 GHz  Transition frequency fT = 45 GHz TSFP-4


    Original     		PDF BFP520F Dec-07-2001 BFP520F

    Untitled

    Abstract: No abstract text available
    Text: SIEGET 45 BFP520F NPN Silicon RF Transistor Preliminary data XYs  For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V 3 Outstanding Gms = 23 dB 2 4 Noise Figure F = 0.95 dB 1  For oscillators up to 15 GHz  Transition frequency fT = 45 GHz TSFP-4


    Original     		PDF BFP520F

    Untitled

    Abstract: No abstract text available
    Text: SIEGET 45 BFP520F NPN Silicon RF Transistor Preliminary data XYs  For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V 3 Outstanding Gms = 23 dB 2 4 Noise Figure F = 0.95 dB 1  For oscillators up to 15 GHz  Transition frequency fT = 45 GHz TSFP-4


    Original     		PDF BFP520F

    Untitled

    Abstract: No abstract text available
    Text: BFP520 Low Noise Silicon Bipolar RF Transistor • Low noise amplifier designed for low voltage 3 applications, ideal for 1.2 V or 1.8 V supply 2 4 voltage. Supports Vcc = 2.9 V with enough 1 external collector resistance. • High gain and low noise at high frequencies


    Original     		PDF BFP520 AEC-Q101 OT343

    BFP520 application notes

    Abstract: SIEGET 45
    Text: SIEGET 45 BFP520 NPN Silicon RF Transistor 3  For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Gms = 23 dB Noise Figure F = 0.95 dB  For oscillators up to 15 GHz 2  Transition frequency fT = 45 GHz 1 VPS05605  Gold metallization for high reliability


    Original     		PDF BFP520 VPS05605 OT343 BFP520 application notes SIEGET 45

    Untitled

    Abstract: No abstract text available
    Text: BFP520F NPN Silicon RF Transistor* • For highest gain low noise amplifier 3 at 1.8 GHz and 2 mA / 2 V 2 4 1 Outstanding Gms = 23 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz • Transition frequency f T = 45 GHz • Gold metallisation for high reliability


    Original     		PDF BFP520F

    BFP520

    Abstract: 702 Z TRANSISTOR SIEMENS BFP520
    Text: Application Note No. 051 Discrete & RF Semiconductors R. Sedlmaier, HL HF AT SIEGET45 - Low Noise Amplifier with BFP520 Transistor at 1.9 GHz This application note describes an example of a Low Noise Amplifier with the BFP520 5th Generation, SOT343 SIEGET 45-Line. Improved performance in Gain


    Original     		PDF BFP520 OT343) 45-Line. 15dBm) BFP520 702 Z TRANSISTOR SIEMENS BFP520

    BFP520

    Abstract: BGA420
    Text: BFP520 NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz and 2 mA / 2 V 2 4 Outstanding Gms = 23.5 dB 1 Noise Figure F = 0.95 dB • For oscillators up to 15 GHz • Transition frequency f T = 45 GHz • Gold metallisation for high reliability


    Original     		PDF BFP520 OT343 BFP520 BGA420

    bfp520

    Abstract: BFP520 application notes AN077 BGA420 spice gummel
    Text: BFP520 NPN Silicon RF Transistor • Low noise amplifier designed for low voltage 3 applications, ideal for 1.2 V or 1.8 V supply 2 4 voltage. Supports 2.9 V V cc with enough external 1 collector resistance. • High gain and low noise at high frequencies


    Original     		PDF BFP520 OT343 bfp520 BFP520 application notes AN077 BGA420 spice gummel

    transistor B 540

    Abstract: TRANSISTOR 1221 sot173 SOT-173 wideband transistor sot173 transistor 541 SOT173 RF transistor
    Text: O bjective specification P h ilip s S em icon du ctors T ^ 3 /-2 NPN 9 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES SbE / BFP520 7110fl2b 0045303 7T3 H P H IN PINNING DESCRIPTION PIN • High power gain • Low noise figure 1 collector • High transition frequency


    OCR Scan     		PDF BFP520 OT173X) BFP520 OT173 OT173X 7110fl2b MBC860 OT173. transistor B 540 TRANSISTOR 1221 sot173 SOT-173 wideband transistor sot173 transistor 541 SOT173 RF transistor

    SOT173

    Abstract: BFP520 MBB866 mbc860 wideband transistor sot173
    Text: Philips Semiconductors Hi bbS3T31 GOBIMTM ITÒ APX Objective specification NPN 9 GHz wideband transistor ^ _ FEATURES PINNING BFP520 N AnER PHILIPS/DISCRETE DESCRIPTION • High power gain PIN • Low noise figure 1 collector • High transition frequency


    OCR Scan     		PDF BFP520 OT173X) BFP520 OT173 OT173X MBC860 OT173. OT173X. 900MHz. SOT173 MBB866 mbc860 wideband transistor sot173

    Untitled

    Abstract: No abstract text available
    Text: • I P h ilip s S em iconductors ^ 5 3 ^ 3 1 DO Sm ^M n fl M APX O bje ctive sp e c ific a tio n NPN 9 GHz wideband transistor ^ ^ FEATURES BFP520 N a HER PHILIPS/DISCRETE PINNING • High power gain PIN • Low noise figure 1 O’ n DESCRIPTION collector


    OCR Scan     		PDF BFP520 OT173X) BFP520 bbS3T31

    Untitled

    Abstract: No abstract text available
    Text: bbSBTBl 003221b A23 Philips Semiconductors Product specification W A P X NPN 9 GHz wideband transistor crystal X3A-BFR520 . . N AMER PHILIPS/DISCRETE DESCRIPTION b'lE D MECHANICAL DATA NPN crystal used in BFR520 SOT23 , BFG520 (SOT143) and BFP520 (SOT173). Crystals are supplied


    OCR Scan     		PDF 003221b X3A-BFR520 BFR520 BFG520 OT143) BFP520 OT173)

    BFG520

    Abstract: X3A-BFR520 SOT173 BFP520 BFR520 SOT-173
    Text: P h ilip s S em icon du ctors Produ ct specification •T'3 1-9-0 NPN 9 GHz wideband transistor crystal X3A-BFR520 StE » PHILIPS INTERNATIONAL DESCRIPTION 711DfiEb DDMblOb 2b5 M E C H A N IC A L DATA NPN crystal used in BFR520 SOT23 , BFG520 (SOT143) and BFP520 (SOT173). Crystals are supplied


    OCR Scan     		PDF X3A-BFR520 BFR520 BFG520 OT143) BFP520 OT173) X3A-BFR520 711DfiEb RV-3-5-52/733 BFG520 SOT173 BFP520 BFR520 SOT-173

    BFP521V

    Abstract: BFP519 BFP520 tranzystor BFP521 T018 Scans-0015604 tranzystory TEWA
    Text: T R A N Z Y S T O R Y n-p-n BFP519, BFP520 i BFP521 23-74/2 SWW 1156-213 Typ BFP519 BFP520 B F P 52J Napiqcie kolektor-baza Napi^cie kolektor-em iter Napi^cie em iter-baza Prqd kolektora P rg d szczytowy kolektora P r^d bazy Moc kolektora T em peratura zl^cza


    OCR Scan     		PDF BFP519, BFP520 BFP521 wsp61czynnika BFP521V BFP519 tranzystor BFP521 T018 Scans-0015604 tranzystory TEWA

    SOT-173

    Abstract: sot173 BFP96 BFQ32C
    Text: 55 RF/Microwave Devices RF W ideband Transistors cont. Type No. BFG198 BFG505 BFG505/X BFG505/XR BFG520 BFG520/X BFG520/XR BFG540 BFG540/X BFG540/XR BFG541 BFG590 BFG590/X BFG590/XR BFG591 BFG621 BFG741 BFP90A BFP91A BFP96 BFP505 BFP520 BFP540 BFQ17 BFQ18A


    OCR Scan     		PDF BFG198 BFG505 BFG505/X BFG505/XR BFG520 BFG520/X BFG520/XR BFG540 BFG540/X BFG540/XR SOT-173 sot173 BFP96 BFQ32C

    SOT173

    Abstract: BFR520 transistor BFG520 BFP520 BFR520 X3A-BFR520
    Text: bbSBTBl 0G3221b ÔE3 W A P X Philips Semiconductors Product specification NPN 9 GHz wideband transistor crystal X3A-BFR520 N AMER PHILIP S/D ISCRETE DESCRIPTION b'IE D MECHANICAL DATA NPN crystal used in BFR520 SOT23 , BFG520 (SOT143) and BFP520 (SOT173). Crystals are supplied


    OCR Scan     		PDF 0G32Slb X3A-BFR520 BFR520 BFG520 OT143) BFP520 OT173) X3A-BFR520 URV-3-5-52/733 SOT173 BFR520 transistor BFG520 BFP520 BFR520

    SOT173

    Abstract: BFP520 BFP520 application notes sot-173 NPN planar RF transistor SOT173 RF transistor
    Text: Objective specification Philips Semiconductors T^ 3/-Z / NPN 9 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES SbE D BFP520 7110fl2b 0045303 7T3 H P H IN PINNING DESCRIPTION PIN • High power gain • Low noise figure 1 collector • High transition frequency


    OCR Scan     		PDF BFP520 OT173X) BFP520 OT173 OT173X 711002b MBCB60 OT173. OT173X. MBB867 SOT173 BFP520 application notes sot-173 NPN planar RF transistor SOT173 RF transistor