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    RT DUROID 5880 Search Results

    RT DUROID 5880 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    5962-9858802QPA Texas Instruments Dual 2.7-V High-Slew-Rate Rail-to-Rail Output Operational Amplifier 8-CDIP -55 to 125 Visit Texas Instruments Buy
    PUCC5880QDFCQ1 Texas Instruments Automotive, 20-A, isolated real-time variable IGBT/SiC MOSFET gate driver with advanced protection 32-SSOP -40 to 125 Visit Texas Instruments
    5962-9758801QDA Texas Instruments Quadruple 2-Input Positive-OR Gates 14-CFP -55 to 125 Visit Texas Instruments Buy
    5962-9758801QCA Texas Instruments Quadruple 2-Input Positive-OR Gates 14-CDIP -55 to 125 Visit Texas Instruments Buy
    5962-9758801Q2A Texas Instruments Quadruple 2-Input Positive-OR Gates 20-LCCC -55 to 125 Visit Texas Instruments Buy
    NA5880- Coilcraft Inc Power inductor, dual-wound, 20% tol, SMT, RoHS, halogen-free Visit Coilcraft Inc

    RT DUROID 5880 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RO4403

    Abstract: Rogers RO4003 rt/duroid 5880 RO4450F rogers 5880 RO3006 RO4350B rogers laminate materials RO4450B RO3210
    Text: Ordering Information: Standard Thickness, Tolerance and Panel Size Rogers’ high frequency laminates can be purchased by contacting a Rogers Customer Service Representative at 480 961-1382 or one of our international offices listed below. To ensure that you receive the material for your application, please include order information for each of the


    Original     		PDF 6010LM, RO3003 RO3035 RO3203 RO3006 RO3206 RO3010 RO3210 RO4003C RO4350B RO4403 Rogers RO4003 rt/duroid 5880 RO4450F rogers 5880 RO3006 rogers laminate materials RO4450B RO3210

    RF331

    Abstract: RT DUROID 5880 RF3311
    Text: BROADBAND HIGH REPEATABILITY TO-5 RELAY SPDT DC–8 GHz SERIES DESIGNATION RF311 RF331 RELAY TYPE RF311 SPDT RF TO-5 relay RF331 Sensitive, SPDT RF TO-5 relay INTERNAL CONSTRUCTION UNI-FRAME SERIES PERFORMANCE FEATURES UPPER STATIONARY CONTACT MOVING CONTACT


    Original     		PDF RF311 RF331 RF331 HP8722D RF311/RF331 RT DUROID 5880 RF3311

    RF311

    Abstract: No abstract text available
    Text: BROADBAND HIGH REPEATABILITY TO-5 RELAY SPDT DC–8 GHz SERIES DESIGNATION RF311 SPDT RF TO-5 relay Sensitive, SPDT RF TO-5 relay INTERNAL CONSTRUCTION PERFORMANCE FEATURES UPPER STATIONARY CONTACT MOVING CONTACT ARMATURE LOWER STATIONARY CONTACT ENVIRONMENTAL AND


    Original     		PDF RF311 RF311 RF331 HP8722D RF311/RF331 RF311RF331\022007\Q1

    rogers 5880

    Abstract: RT DUROID 5880 rt/duroid 5880
    Text: BROADBAND HIGH REPEATABILITY TO-5 RELAY SPDT DC–8 GHz SERIES DESIGNATION RF311 RF331 RELAY TYPE RF311 SPDT RF TO-5 relay RF331 Sensitive, SPDT RF TO-5 relay INTERNAL CONSTRUCTION UNI-FRAME SERIES PERFORMANCE FEATURES UPPER STATIONARY CONTACT MOVING CONTACT


    Original     		PDF RF311 RF331 RF331 HP8722D RF311/RF331 rogers 5880 RT DUROID 5880 rt/duroid 5880

    ATF13136

    Abstract: AN-A002 transistor atf TVRO stub tuner matching 5091-9055E ATF-13136
    Text: ATF-13X36 Demonstration Amplifier Application Note G001 Although the following information covers the ATF-13136, the ATF-13336 and the ATF-13736 could be substituted, with some degradation in noise performance. Introduction This Application Note describes a one stage low noise amplifier


    Original     		PDF ATF-13X36 ATF-13136, ATF-13336 ATF-13736 ATF-13136. ATF-13136 5091-9055E 5967-5487E ATF13136 AN-A002 transistor atf TVRO stub tuner matching

    rf311

    Abstract: RF311RF331 J412 to-5 RELAY-SPDT RF300 motor RT DUROID 5880 er116c
    Text: BROADBAND HIGH REPEATABILITY TO-5 RELAY SPDT DC–8 GHz SERIES DESIGNATION RF311 RF331 RELAY TYPE RF311 SPDT RF TO-5 relay RF331 Sensitive, SPDT RF TO-5 relay INTERNAL CONSTRUCTION UNI-FRAME SERIES PERFORMANCE FEATURES UPPER STATIONARY CONTACT MOVING CONTACT


    Original     		PDF RF311 RF331 RF311 RF331 ER116C ER136C RF311RF331 J412 to-5 RELAY-SPDT RF300 motor RT DUROID 5880

    gold detector circuit free

    Abstract: coil gold detector microstrip directional coupler yig oscillator rt/duroid 5880 hfss directional coupler sampling gate stripline directional couplers 20ghz vco ghz coupler
    Text: Novel Design for Microwave Source Author: Saddique Mohammed Published in: Microwave Engineering Europe Date: October 1998 BACKGROUND As in all other fields of electronics, the microwave subsystem is undergoing a period of miniaturisation. The drive from microwave component purchasers who want to pack as much


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: BROADBAND HIGH REPEATABILITY TO-5 RELAY SPDT DC–8 GHz SERIES DESIGNATION RF311 RF331 RELAY TYPE RF311 SPDT RF TO-5 relay RF331 Sensitive, SPDT RF TO-5 relay INTERNAL CONSTRUCTION UNI-FRAME SERIES PERFORMANCE FEATURES UPPER STATIONARY CONTACT MOVING CONTACT


    Original     		PDF RF311 RF331 RF311 RF331 ER116C ER136C

    NE3517S03

    Abstract: rt/duroid 5880 RT DUROID 5880 NE3517S03-A marking t1c rogers 5880 HS350 NE3517S03-T1D-A NE3517S03-T1C rt duroid
    Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3517S03 K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET FEATURES • Super low noise figure, high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • K-band Micro-X plastic S03 package APPLICATIONS


    Original     		PDF NE3517S03 NE3517S03-T1C NE3517S03-T1C-A NE3517S03-T1D NE3517S03-T1D-A NE3517S03 rt/duroid 5880 RT DUROID 5880 NE3517S03-A marking t1c rogers 5880 HS350 NE3517S03-T1D-A NE3517S03-T1C rt duroid

    NE3514S02

    Abstract: NE3514 NE3514S02-A transistor "micro-x" "marking" 3 RT DUROID 5880 NE3514S02-T1D NE3514S02-T1C-A ir260 N-CHANNEL HJ-FET NE3514S02-T1D-A
    Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3514S02 K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.75 dB TYP., Ga = 10 dB TYP. @ f = 20 GHz • Micro-X plastic S02 package APPLICATIONS


    Original     		PDF NE3514S02 NE3514S02-T1C NE3514S02-T1D NE3514S02-T1C-A NE3514S02-T1D-A NE3514S02-A 25Cted, PG10593EJ01V0DS NE3514S02 NE3514 NE3514S02-A transistor "micro-x" "marking" 3 RT DUROID 5880 ir260 N-CHANNEL HJ-FET

    NE3517S03-A

    Abstract: NE3517S03-T1C NE3517S03 HS350
    Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3517S03 K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET FEATURES • Super low noise figure, high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • K-band Micro-X plastic S03 package APPLICATIONS


    Original     		PDF NE3517S03 NE3517S03-T1C NE3517S03-T1D NE3517S03-T1C-A NE3517S03-T1D-A NE3517S03-A PG10787EJ01V0DS NE3517S03-A NE3517S03 HS350

    RT DUROID 5880

    Abstract: NE3512 NE3512S02-T1D-A PG10592EJ01V0DS HS350
    Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3512S02 C TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.35 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz • Micro-X plastic S02 package APPLICATIONS


    Original     		PDF NE3512S02 NE3512S02-T1C NE3512S02-T1D NE3512S02-T1C-A NE3512S02-T1D-A NE3512S02-A PG10592EJ01V0DS RT DUROID 5880 NE3512 PG10592EJ01V0DS HS350

    NE3515S02

    Abstract: transistor "micro-x" "marking" 3 NE3515S02-T1C-A ne3515 NE3515S02-T1D-A duroid 5880 RT DUROID 5880 X KU-BAND GAAS HS350 ir260
    Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3515S02 X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure, high associated gain and middle output power NF = 0.3 dB TYP., Ga = 12.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA


    Original     		PDF NE3515S02 NE3515S02-T1C NE3515S02-T1D NE3515S02-T1C-A NE3515S02-T1D-A PG10708EJ01V0DS NE3515S02 transistor "micro-x" "marking" 3 ne3515 duroid 5880 RT DUROID 5880 X KU-BAND GAAS HS350 ir260

    AD8313-EVAL

    Abstract: AD8313 EVAL-AD8313EB sma 906 SMA pcb footprint Connector
    Text: AD8313 Evaluation Board EVAL-AD8313EB BOARD DESCRIPTION Schematic and Layout Figure 5 shows the schematic of the evaluation board that was used to characterize the AD8313. Note that uninstalled components are drawn in as dashed. This is a 3-layer board signal, ground, and power , with a Duroid


    Original     		PDF AD8313 EVAL-AD8313EB AD8313. 680pF AD8313 C03325 AD8313-EVAL EVAL-AD8313EB sma 906 SMA pcb footprint Connector

    ne3514s02

    Abstract: NE3514 NE3514S02-T1C s2p marking t1c rogers 5880 HS350 k-band amplifier
    Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3514S02 K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.75 dB TYP., Ga = 10 dB TYP. @ f = 20 GHz • Micro-X plastic S02 package APPLICATIONS


    Original     		PDF NE3514S02 NE3514S02-T1C NE3514S02-T1C-A NE3514S02-T1D NE3514S02-T1D-A NE3514S0anty ne3514s02 NE3514 NE3514S02-T1C s2p marking t1c rogers 5880 HS350 k-band amplifier

    NE350184C

    Abstract: NE350184C-T1A-A rogers 5880 rt/duroid 5880 17802A GA-13 HS350 NE350184C-T1 NE350184C-T1A k-band amplifier
    Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE350184C K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • Micro-X ceramic 84C package APPLICATIONS


    Original     		PDF NE350184C NE350184C-T1 NE350184C-T1-A NE350184C-T1A NE350184C-T1A-A NE350anty NE350184C NE350184C-T1A-A rogers 5880 rt/duroid 5880 17802A GA-13 HS350 NE350184C-T1 NE350184C-T1A k-band amplifier

    NE3514

    Abstract: NE3514S02 HS350 PG10593EJ01V0DS
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3514S02 K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.75 dB TYP., Ga = 10 dB TYP. @ f = 20 GHz • Micro-X plastic S02 package APPLICATIONS


    Original     		PDF NE3514S02 NE3514S02-T1C NE3514S02-T1C-A NE3514S02-T1D NE3514S02-T1D-A NE3514 NE3514S02 HS350 PG10593EJ01V0DS

    ne3511s02 s2p

    Abstract: NE3511S02 NE3511S02-T1D rt/duroid 5880 HS350 NE3511S02-T1C NE3511S02-T1C-A lnb ku-band rogers 5880
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3511S02 X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.30 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz • Micro-X plastic S02 package


    Original     		PDF NE3511S02 NE3511S02-T1C NE3511S02-T1C-A NE3511S02-T1D NE3511S02-T1D-A ne3511s02 s2p NE3511S02 NE3511S02-T1D rt/duroid 5880 HS350 NE3511S02-T1C NE3511S02-T1C-A lnb ku-band rogers 5880

    GPS05121

    Abstract: PMB2331
    Text: ICs for Communications MIXER PMB 2331 Version 1.2 Preliminary Data Sheet 02.96 T2331-XV12-P1-7600 PMB 2331 Revision History: Previous Version: Page in Version Page (in new Version) Current Version: 02.96 none Subjects (major changes since last revision)


    Original     		PDF T2331-XV12-P1-7600 GPS05121 GPS05121 PMB2331

    SMTO-8

    Abstract: WATKINS-JOHNSON CO WATKINS-JOHNSON CO SMTO-8 IN5880
    Text: A Revolutionary RF/Microwave "Surface-Mount" Product Line by: Louis M. Seieroe, Kenneth S. Ledford, Timothy J. Bianey and Louis Hsiao Watkins-Johnson Company Palo Alto, CA The emphasis on improving system per­ formance by adding new features, while at the same time reducing overall system


    OCR Scan     		PDF 96-hour SMTO-8 WATKINS-JOHNSON CO WATKINS-JOHNSON CO SMTO-8 IN5880

    AN-A002

    Abstract: AN-G002 testing amplifier circuit ATF-10136 TF-10136 low noise design ATF 10136 stub tuner matching 10136 stub tuner waveguide AM Noise Reduction System
    Text: W hpfiM %PH AE CWKLAERT DT mL' AN-G 002 A TF-10136 Dem onstration Am plifier Novem ber, 1990 Introduction This Applications Bulletin describes a one stage low noise am plifier designed using the HP ATF-10136 G aAs FET transistor. This amplifier demonstrates the capabilities of this


    OCR Scan     		PDF TF-10136 ATF-10136 ATF-10136. ATF10136 5091-4863E AN-A002 AN-G002 testing amplifier circuit low noise design ATF 10136 stub tuner matching 10136 stub tuner waveguide AM Noise Reduction System

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS ICs for Communications LNA/MIXER P M B 2332 Version 1.2 Preliminary Specification 06.96 T2332-XV12-P2-7600 053SbO S 0 C H flb 4 3 7bfc> E d itio n 06 .96 A u s g a b e 06 .9 6 P u b lis h e d b y S ie m e n s A G , B e re ic h H a lb le ite r, M a rk e tin g K o m m u n ik a tio n , B ala n s tra B e 73,


    OCR Scan     		PDF T2332-XV12-P2-7600 053SbO fl235b05

    Untitled

    Abstract: No abstract text available
    Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER FEATURES_ • HIGH DYNAMIC RANGE • LOW IM DISTORTION: -40 dBc • HIGH OUTPUT POWER : 27.5 dBm at TYP • LOW NOISE: 1.5 dB TYP at 500 MHz


    OCR Scan     		PDF NE46100 NE46134 NE46134 NE461 7100D IS12I J52lL IS12S21I

    MJ 15007 transistor

    Abstract: MJ 15007 NE41634 transistor XM SOT-89 Transistor 33735 low noise transistor bc 179 NE46134 equivalent
    Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER FEATURES_ • HIGH DYNAMIC RANGE • LOW IM DISTORTION: -40 dBc • HIGH OUTPUT POWER : 27.5 dBm at TYP • LOW NOISE: 1.5 dB TYP at 500 MHz


    OCR Scan     		PDF NE46100 NE46134 NE46134 NE461 b427525 b5L37 OT-89) MJ 15007 transistor MJ 15007 NE41634 transistor XM SOT-89 Transistor 33735 low noise transistor bc 179 NE46134 equivalent