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    NE41634

    Abstract: NE46134 2SC4536 AN-1001 NE46100 S21E 7100D
    Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER f = 1.0 GHz, IC = 100 mA FEATURES • HIGH DYNAMIC RANGE 30.0 • HIGH OUTPUT POWER : 27.5 dBm at TYP 28.0 • LOW NOISE: 1.5 dB TYP at 500 MHz • LOW COST


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    PDF NE46100 NE46134 NE461 24-Hour NE41634 NE46134 2SC4536 AN-1001 NE46100 S21E 7100D

    NE46134

    Abstract: NE46134-T1 NE46100 nec k 813 2SC4536 AN-1001 S21E transistor nec cel
    Text: NEC's NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER f = 1.0 GHz, IC = 100 mA FEATURES • HIGH DYNAMIC RANGE 30.0 • HIGH OUTPUT POWER : 27.5 dBm at TYP 28.0 • LOW NOISE: 1.5 dB TYP at 500 MHz • LOW COST


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    PDF NE46100 NE46134 NE461 NE46134-T1 NE46134 NE46134-T1 NE46100 nec k 813 2SC4536 AN-1001 S21E transistor nec cel

    NE46134-T1

    Abstract: No abstract text available
    Text: NE46100 / NE46134 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER f = 1.0 GHz, IC = 100 mA • HIGH DYNAMIC RANGE • LOW IM DISTORTION: -40 dBc • LOW NOISE: 1.5 dB TYP at 500 MHz • LOW COST DESCRIPTION The NE461 series of NPN silicon epitaxial bipolar transistors is designed for medium power applications requiring high


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    PDF NE46100 NE46134 NE46134 NE461 NE46100, OT-89) NE46134-T1

    NE46100

    Abstract: NE46134-T1-AZ NE46134 2SC4536 AN-1001 S21E transistor at 1438 6206 SOT-89 0821 p4tl3-010
    Text: NEC's NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER f = 1.0 GHz, IC = 100 mA FEATURES • HIGH DYNAMIC RANGE 30.0 • HIGH OUTPUT POWER : 27.5 dBm at TYP 28.0 • LOW NOISE: 1.5 dB TYP at 500 MHz • LOW COST


    Original
    PDF NE46100 NE46134 NE461 NE46100 NE46134-T1-AZ NE46134 2SC4536 AN-1001 S21E transistor at 1438 6206 SOT-89 0821 p4tl3-010

    NE46134

    Abstract: FRO 021 0027 2SC4536 AN-1001 NE46100 S21E
    Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER f = 1.0 GHz, IC = 100 mA FEATURES • HIGH DYNAMIC RANGE 30.0 • HIGH OUTPUT POWER : 27.5 dBm at TYP 28.0 • LOW NOISE: 1.5 dB TYP at 500 MHz • LOW COST


    Original
    PDF NE46100 NE46134 NE461 NE46134 FRO 021 0027 2SC4536 AN-1001 NE46100 S21E

    Untitled

    Abstract: No abstract text available
    Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER FEATURES • HIGH DYNAMIC RANGE • LOW IM DISTORTION: -40 dBc • HIGH OUTPUT POWER : 27.5 dBm at TYP • LOW NOISE: 1.5 dB TYP at 500 MHz • LOW COST ID O


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    PDF NE46100 NE46134 NE46134 NE461 OT-89) 160jj NE46134-T1 24-Hour

    MJ 15007 transistor

    Abstract: MJ 15007 NE41634 transistor XM SOT-89 Transistor 33735 low noise transistor bc 179 NE46134 equivalent
    Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER FEATURES_ • HIGH DYNAMIC RANGE • LOW IM DISTORTION: -40 dBc • HIGH OUTPUT POWER : 27.5 dBm at TYP • LOW NOISE: 1.5 dB TYP at 500 MHz


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    PDF NE46100 NE46134 NE46134 NE461 b427525 b5L37 OT-89) MJ 15007 transistor MJ 15007 NE41634 transistor XM SOT-89 Transistor 33735 low noise transistor bc 179 NE46134 equivalent

    ne46134

    Abstract: NE46134 equivalent ne461
    Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER FEATURES_ • HIGH DYNAMIC RANGE . LOW IM DISTORTION: -40 dBc • HIGH OUTPUT POWER : 27.5 dBm at TYP . LOW NOISE: 1.5 dB TYP at 500 MHz


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    PDF NE46100 NE46134 NE46134 NE461 7100D -12S2L OT-89) NE46134 equivalent

    Untitled

    Abstract: No abstract text available
    Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER FEATURES_ • HIGH DYNAMIC RANGE • LOW IM DISTORTION: -40 dBc • HIGH OUTPUT POWER : 27.5 dBm at TYP • LOW NOISE: 1.5 dB TYP at 500 MHz


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    PDF NE46100 NE46134 NE46134 NE461 7100D IS12I J52lL IS12S21I

    Untitled

    Abstract: No abstract text available
    Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER FEATURES_ • HIGH DYNAMIC RANGE • LOW IM DISTORTION: -4 0 dBc • HIGH OUTPUT POWER : 2 7 .5 dBm at T Y P • LOW NOISE: 1.5 dB T Y P at 5 0 0 M H z


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    PDF NE46100 NE46134 NE46134 sur208 NE46100, OT-89) NE46134-T1