C10535E
Abstract: NE4210M01 NE4210M01-T1 NEC Ga FET marking A 119 069
Text: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE4210M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE4210M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.
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NE4210M01
NE4210M01
NE4210M01-T1
C10535E
NE4210M01-T1
NEC Ga FET marking A
119 069
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atf-41435
Abstract: 99250 schematic diagram receiver data circuit satellite ATF-10235 5091-8823E
Text: Design of a 4 GHz LNA for a TVRO System Application Note A002 Introduction With the advent of low cost GaAs FETs, the consumer home entered a new phase in communications: the era of satellite television reception. A typical Television Receive Only TVRO system for this market is
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5091-8823E
5968-3244E
atf-41435
99250
schematic diagram receiver data circuit satellite
ATF-10235
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Untitled
Abstract: No abstract text available
Text: HMC203 v01.0801 MICROWAVE CORPORATION GaAs MMIC DOUBLE-BALANCED MIXER, 14 - 23 GHz Typical Applications Features The HMC203 is ideal for: Conversion Loss: 10 dB • 18 GHz TVRO LO / RF Isolation: 38 dB • 23 GHz Telecom Radios Passive: No DC Bias Required
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HMC203
HMC203
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d1557
Abstract: d472 TRANSISTOR TRANSISTOR d1557 transistor d472 D1162 D1790 D1557 transistor D1866 Nec d862 transistor D442
Text: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE428M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE428M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.
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NE428M01
NE428M01
200Pm
NE428M01-T1
d1557
d472 TRANSISTOR
TRANSISTOR d1557
transistor d472
D1162
D1790
D1557 transistor
D1866
Nec d862
transistor D442
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transistor marking v72
Abstract: transistor k 2628 NEC Ga FET marking C C10535E NE429M01 NE429M01-T1 VP15-00-3 hjfet NEC Ga FET marking A
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE429M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.
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NE429M01
NE429M01
NE429M01-T1
transistor marking v72
transistor k 2628
NEC Ga FET marking C
C10535E
NE429M01-T1
VP15-00-3
hjfet
NEC Ga FET marking A
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Untitled
Abstract: No abstract text available
Text: HMC203 v02.0506 MIXERS - CHIP 3 GaAs MMIC DOUBLE-BALANCED MIXER, 14 - 23 GHz Typical Applications Features The HMC203 is ideal for: Conversion Loss: 10 dB • 18 GHz TVRO LO / RF Isolation: 38 dB • 23 GHz Telecom Radios Passive: No DC Bias Required • Military Systems
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HMC203
HMC203
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Untitled
Abstract: No abstract text available
Text: HMC203 v01.0801 MICROWAVE CORPORATION GaAs MMIC DOUBLE-BALANCED MIXER, 14 - 23 GHz Typical Applications Features The HMC203 is ideal for: Conversion Loss: 10 dB • 18 GHz TVRO LO / RF Isolation: 38 dB • 23 GHz Telecom Radios Passive: No DC Bias Required
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HMC203
HMC203
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10015a
Abstract: 10901A POWER SUPPLY 10308A 10028a 1137002 10408A TVRO 10016A 10209C 10108A
Text: Data Sheet, Rev. 1 October 2001 System 10000 TVRO L-Band and C-Band Fiber-Optic Links Description Features • 950 MHz—2050 MHz, 3.625 GHz—4.2 GHz ■ Coax cable replacement up to 40 km ■ Plug-ins, 19 in. rack-mount chassis ■ C/L band version combines two polarizations on
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Hz--2050
0008A,
0028A,
0015A,
0035A,
DS00-301OPTO-1
DS00-301OPTO)
10015a
10901A POWER SUPPLY
10308A
10028a
1137002
10408A
TVRO
10016A
10209C
10108A
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HMC203
Abstract: No abstract text available
Text: MICROWAVE CORPORATION HMC203 v01.0801 GaAs MMIC DOUBLE-BALANCED MIXER, 14 - 23 GHz Typical Applications Features The HMC203 is ideal for: Conversion Loss: 10 dB • 18 GHz TVRO LO / RF Isolation: 38 dB • 23 GHz Telecom Radios Passive: No DC Bias Required
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HMC203
HMC203
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Untitled
Abstract: No abstract text available
Text: HMC203 v01.0801 GaAs MMIC DOUBLE-BALANCED MIXER, 14 - 23 GHz Typical Applications Features The HMC203 is ideal for: Conversion Loss: 10 dB • 18 GHz TVRO LO / RF Isolation: 38 dB • 23 GHz Telecom Radios Passive: No DC Bias Required • Military Systems
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HMC203
HMC203
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atf-41435
Abstract: schematic diagram receiver satellite S2PB schematic diagram receiver data circuit satellite ATF-10235 AN-A002 tvro system in low power transmitter 2N2907 PNP Transistor to 92 2N2907 ATF10236
Text: Design of a 4 GHz LNA for a TVRO System Application Note AN A002 Introduction With the advent of low cost GaAs FETs, the consumer home entered a new phase in communications: the era of satellite television reception. A typical Television Receive Only TVRO system for this market is shown in
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ABA-31563
Abstract: agilent RF Marking 07 A004R ABA-31563-BLKG ABA-31563-TR1G ABA-31563-TR2G marking .576 sot363
Text: Agilent ABA-31563 3.5 GHz Broadband Silicon RFIC Amplifier Data Sheet Features • Operating Frequency DC ~ 3.5GHz • 21.5 dB Gain • VSWR < 2.0 throughout operating frequency • 2.2 dBm Output P1dB Description Agilent’s ABA-31563 is an economical, easy-to-use, internally 50Ω matched, silicon
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ABA-31563
ABA-31563
OT-363
OT-143
5989-0755EN
5989-1968EN
agilent RF Marking 07
A004R
ABA-31563-BLKG
ABA-31563-TR1G
ABA-31563-TR2G
marking .576 sot363
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5967-5769E
Abstract: class D power amplifier 6.78 MHz a006 INA-32063 INA-32063-BLK NF50 marking 320 SOT-363
Text: 3.0 GHz Wideband Silicon RFIC Amplifier Technical Data INA-32063 Features • 17 dB Gain at 1.9 GHz Surface Mount SOT-363 SC-70 Package • +3 dBm P1 dB at 1.9 GHz • Single +3V Supply • Unconditionally Stable Applications Pin Connections and Package Marking
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INA-32063
OT-363
SC-70)
INA-32063
5965-8921E
5967-5769E
5967-5769E
class D power amplifier 6.78 MHz
a006
INA-32063-BLK
NF50
marking 320 SOT-363
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B-696
Abstract: B680 B694 siemens b615 B635 SIEMENS SAW siemens saw filters B686 B692 B621
Text: SIEMENS Components Overview SAW Filters for DBS/TVRO Applications Survey Center Frequency MHz 3 dB Bandwidth MHz Shunt Resistors 1* Package Type 402,78 27,0 + 31,0 no TO 39 B609 403,18 26,9 + 32,1 31,3 yes, no TO 39 TO 39 B629 B682 479,50 27,0 27,0 27,0 21,5
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC BIPOLAR DIGITAL INTEGRATED CIRCUIT /¿PB588G 2.5 GHz INPUT PRESCALER DIVIDED BY 128,64 DESCRIPTION The /xPB588 is a silicon bipolar prescaler ICoperating up to 2.5 GHz anddivided by 128,64. Due to 2.5 GHz operation and high division, this IC can contribute toproduce TVRO/DBS IDU andtele-communication systems with
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uPB588G
/xPB588
uPB588G-E1
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NEC Ga FET marking L
Abstract: ap 2761 l transistor NEC D 822 P nec gaas fet marking nec 2761 NEC 426 NEC Ga FET low noise FET NEC U
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE434S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET D ES C R IP TIO N The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO
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NE434S01
NE434S01
NEC Ga FET marking L
ap 2761 l transistor
NEC D 822 P
nec gaas fet marking
nec 2761
NEC 426
NEC Ga FET
low noise FET NEC U
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NEC Ga FET marking L
Abstract: No abstract text available
Text: DATA SH E E T HETERO JUNCTION FIELD EFFECT TRANSISTOR NE429M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.
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NE429M01
NE429M01
200pm
NEC Ga FET marking L
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S080-1506
Abstract: Avantek mixer
Text: AVANTEK Q I NC 5 GE D l l t n t t 0007527 TVRO Varactor-Tuned Oscillator avantek 3 S080-1506 — T-50 -2.1 FEATURES • Low Cost • • • • • • • Low Frequency Drift Low FM/Phase Noise Excellent Load Isolation +13 dBm Typical Output Power ±1.5 dB Typical Output Flatness
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S080-1506
S080-1506
Avantek mixer
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Untitled
Abstract: No abstract text available
Text: DA TA SH EET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE429M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.
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NE429M01
NE429M01
NE429M01-T1
Fin/50
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UMX-4220
Abstract: 5053F
Text: Q UMX-4220 Double Balanced Mixer 3700 to 4200 MHz avantek FEATURES APPLICATIONS • 1.5:1 VSWR • 4.5 dB Conversion Loss/Noise Figure • Low Cost • Low Cost, High Performance • 3.7 to 4.2 GHz Downconverter in TVRO Applications • Instrumentation and Test
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UMX-4220
5053F
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Untitled
Abstract: No abstract text available
Text: AVANTEK INC 44E D 0 « w n K H im n b b 3700 to 4200 MHz APPLICATIONS • 1.5:1 VSWR • 4,5 dB Conversion Loss/Noise Figure • Low Cost • Low Cost, High Performance • 3,7 to 4.2 GHz Downconverter in TVRO Applications • Instrumentation and Test Equipment
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REGULATOR IC 7804
Abstract: AN-A007 AVANTEK MSA-0885 7804 regulator AVANTEK AN-A001 AN-A002 Avantek a08 S parameters for ATF 10136 Avantek aft avantek
Text: M HEW LETT AN-A007: PACKARD 4 g h z Television Receive Only LNB Design Introduction This note describes the design of a modern LNB low noise block converter for the C band (3.7-4.2 GHz) TVRO market. The block converter consists of a low noise amplifier (LNA), a
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AN-A007:
ATF-10236
ATF-10736
AN-A001:
AN-S005:
5091-8825E
REGULATOR IC 7804
AN-A007
AVANTEK MSA-0885
7804 regulator
AVANTEK AN-A001
AN-A002
Avantek a08
S parameters for ATF 10136
Avantek aft
avantek
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spd 3465-18
Abstract: SPD3510-XX comb generator SPD3465 step recovery diode SPD-3472-12 SPD-3465-04 Sampling Phase Detectors ALPHA INDUSTRIES
Text: E0Alpha Sampling Phase Detectors SPD3465, SPD3471, SPD3472 Series Features • Low Cost Design for Phase Lock ■ Rugged, Modular, Hybrid Construction ■ Phase Locks VCO and DROs up to 20 GHz ■ Wide Frequency Range ■ Available for Oscillator Signal Levels from
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SPD3465,
SPD3471,
SPD3472
spd 3465-18
SPD3510-XX
comb generator
SPD3465
step recovery diode
SPD-3472-12
SPD-3465-04
Sampling Phase Detectors
ALPHA INDUSTRIES
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Untitled
Abstract: No abstract text available
Text: m HMC203 * MICROWAVE CORPORATION GaAsMMIC DOUBLE-BALANCED MIXER 14-23 GHz F E B R U A R Y 1998 Features General Description CONVERSION LOSS: 8 to 10 dB The HMC203 chip is a miniature double balanced mixer which can be used as an LO/RF ISOLATION: 30 to 55 dB
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HMC203
HMC203
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