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California Eastern Laboratories (CEL) NE3515S02-A RF MOSFET GAAS HJ-FET 2V S02
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DigiKey	NE3515S02-A	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
California Eastern Laboratories (CEL) NE3515S02-T1C-A RF MOSFET HFET 2V 4MICROX
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DigiKey	NE3515S02-T1C-A	Reel			2,000	1 - 10 - 100 - 1000 - 10000 $1.6	Buy Now
	NE3515S02-T1C-A	Reel			2,000	1 - 10 - 100 - 1000 - 10000 $1.30573	Buy Now
California Eastern Laboratories (CEL) NE3515S02-T1D-A RF MOSFET GAAS HJ-FET 2V S02
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DigiKey	NE3515S02-T1D-A	Reel			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics LLC NE3515S02-T1D-A RF MOSFET HFET 2V S02
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DigiKey	NE3515S02-T1D-A	Bulk			417	1 - 10 - 100 - 1000 $0.72 10000 $0.72	Buy Now
Renesas Electronics Corporation NE3515S02-T1D-A NE3515S02 - RF Small Signal Field-Effect Transistor, KU Band, N-Channel, Hetero-junction FET '
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Rochester Electronics	NE3515S02-T1D-A		632,266		1	1 $0.6933 10 $0.6933 100 $0.6517 1000 $0.5893 10000 $0.5893	Buy Now

NE3515S02 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NE3515S02-A		California Eastern Laboratories	RF FETs, Discrete Semiconductor Products, FET RF HFET 12GHZ 2V 10MA S02		Original	PDF
NE3515S02-T1C-A		California Eastern Laboratories	RF FETs, Discrete Semiconductor Products, FET RF HFET 12GHZ 2V 10MA S02		Original	PDF
NE3515S02-T1D-A		CEL	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - FET RF HFET 12GHZ 2V 10MA S02		Original	PDF

NE3515S02 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
NE3515S02 Abstract: transistor "micro-x" "marking" 3 NE3515S02-T1C-A ne3515 NE3515S02-T1D-A duroid 5880 RT DUROID 5880 X KU-BAND GAAS HS350 ir260 Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3515S02 X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure, high associated gain and middle output power NF = 0.3 dB TYP., Ga = 12.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA	Original	NE3515S02 NE3515S02-T1C NE3515S02-T1D NE3515S02-T1C-A NE3515S02-T1D-A PG10708EJ01V0DS NE3515S02 transistor "micro-x" "marking" 3 ne3515 duroid 5880 RT DUROID 5880 X KU-BAND GAAS HS350 ir260	PDF
NE3515S02 Abstract: NEC Ga FET marking L NE3515S02-T1C-A maximum gain s2p gaas fet micro-X NEC L lnb ku-band NE3515S02-T1C gaas fet micro-X Package marking GaAs S2p NE3515S02 NE3515S02-T1D-A Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3515S02 X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure, high associated gain and middle output power NF = 0.3 dB TYP., Ga = 12.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA	Original	NE3515S02 NE3515S02-T1C NE3515S02-T1C-A NE3515S02-T1D NE3515S02-T1D-A NE3515S02 NEC Ga FET marking L NE3515S02-T1C-A maximum gain s2p gaas fet micro-X NEC L lnb ku-band NE3515S02-T1C gaas fet micro-X Package marking GaAs S2p NE3515S02 NE3515S02-T1D-A	PDF
NE3515S02 Abstract: NE3515S02-T1C-A NE3515S02-T1D-A HS350 NE3515S02-T1C lnb ku-band GaAs S2p NE3515S02 Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3515S02 X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure, high associated gain and middle output power NF = 0.3 dB TYP., Ga = 12.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA	Original	NE3515S02 NE3515S02-T1C NE3515S02-T1C-A NE3515S02-T1D NE3515S02-T1D-A NE3515S02 NE3515S02-T1C-A NE3515S02-T1D-A HS350 NE3515S02-T1C lnb ku-band GaAs S2p NE3515S02	PDF
mobile phone basic block diagram Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .	Original	G0706 PX10020EJ41V0PF mobile phone basic block diagram PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT	PDF
FET marking code g5d Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .	Original	R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic	PDF
nec mosfet marked v75 Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77 Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77	PDF
2SK2500 Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861 Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose	Original		PDF
SMD M05 sot23 Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404 Text: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly	Original	2013/4M SMD M05 sot23 NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404	PDF
NE3515S02 Abstract: NE3515S02-T1C-A NE3515S02-T1C ROHS GA-08 HS350 NE3515S02-T1D-A RT DUROID 5880 Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	NE3515S02 NE3515S02-T1C NE3515S02-T1C-A NE35om PG10708JJ01V0DS IR260 HS350 NE3515S02 NE3515S02-T1C-A NE3515S02-T1C ROHS GA-08 HS350 NE3515S02-T1D-A RT DUROID 5880	PDF
ic isl 887 Abstract: 2SC5508 NE3514 SW SPDT NE3515S02 NE5510279A NESG2031M05 PG2179 NE3509M04 NE3517S03 Text: RF & マイクロ波デバイスシステムブロック www.renesas.com 2010.04 目次 1. はじめに •··········································································································································· 3	Original	PA86x PG2158T5K PC3218T5Y NES1823M-45, NES1823M-180, NES1823M-240, NES1823S-45, NES1823S-90 R09CA0001JJ0100 PX10020JJ42V0PF ic isl 887 2SC5508 NE3514 SW SPDT NE3515S02 NE5510279A NESG2031M05 PG2179 NE3509M04 NE3517S03	PDF
SMD transistor M05 Abstract: smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR Text: NEC XXXXXXXXXX RF & Wireless Semiconductors 2010 2 P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories serves designers, OEMs and contract manufacturers in the RF & Wireless, Mobilecomm, Multimedia, Broadband Communications, Industrial Control, and Automated Test Equipment ATE	Original	10/2M SMD transistor M05 smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR	PDF
mc10087f1 Abstract: mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059 Text: 1／89 Lead-free Semiconductor Product Conditions Renesas Electronics Lead-free Semiconductor Product Conditions August 17, 2010 1.Please inquire of Renesas Electronics sales person about lead-free product status while is not listed in the following table.	Original	IR260/WS260/HS350 IR260/HS350 mc10087f1 mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059	PDF
UPC8236 Abstract: 2SC5508 NE3512S02 digital tv tuner hjfet NESG240033 SW SPDT NE5510279A antenna for microwave CATV materials ANTENNA parabolic Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − April 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .	Original	G0706 PX10020EJ39V0PF UPC8236 2SC5508 NE3512S02 digital tv tuner hjfet NESG240033 SW SPDT NE5510279A antenna for microwave CATV materials ANTENNA parabolic	PDF
UPC8236 Abstract: 2SC5508 2SC3357/NE85634 CATV MODULATOR NE5510279A upg2406t6r Microwave GaAs FET catalogue NE3515S02 NE662M04 NE3514S02 Text: RF AND MICROWAVE DEVICES SYSTEM BLOCK DIAGRAMS www.renesas.com 2010.04 CONTENTS 1. INTRODUCTION . 3 1-1. Basic RF Blocks . 4	Original	R09CA0001EJ0100 PX10020EJ42V0PF UPC8236 2SC5508 2SC3357/NE85634 CATV MODULATOR NE5510279A upg2406t6r Microwave GaAs FET catalogue NE3515S02 NE662M04 NE3514S02	PDF

2SC5508 Abstract: UPC3243 UPC8236 NE3509 NE3517S03 transistor 20107 800 Mhz Cordless Phone circuit diagram NESG270034 2SC4226 APPLICATION NOTES NE5510279A Text: RF AND MICROWAVE DEVICES SYSTEM BLOCK DIAGRAMS www.renesas.com 2010.10 CONTENTS 1. INTRODUCTION . 3 1-1. Basic RF Blocks . 4	Original	R09CA0001EJ0300 2SC5508 UPC3243 UPC8236 NE3509 NE3517S03 transistor 20107 800 Mhz Cordless Phone circuit diagram NESG270034 2SC4226 APPLICATION NOTES NE5510279A	PDF