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    RF1S50N06 Search Results

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    RF1S50N06 Price and Stock

    Rochester Electronics LLC RF1S50N06

    50A, 60V, 0.022 OHM, N-CHANNEL
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    DigiKey RF1S50N06 Bulk 290
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    Rochester Electronics LLC RF1S50N06LE

    N-CHANNEL POWER MOSFET
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    DigiKey RF1S50N06LE Bulk 281
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    Rochester Electronics LLC RF1S50N06LESM

    N-CHANNEL POWER MOSFET
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    DigiKey RF1S50N06LESM Bulk 307
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    Rochester Electronics LLC RF1S50N06SM9A

    N-CHANNEL POWER MOSFET
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    DigiKey RF1S50N06SM9A Bulk 317
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    Rochester Electronics LLC RF1S50N06SM9AS2551

    MOSFET 60V 50A
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    DigiKey RF1S50N06SM9AS2551 Bulk 293
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    Find more RF1S50N06 price and stock on Findchips.com

    RF1S50N06 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RF1S50N06 Harris Semiconductor 50A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs Original PDF
    RF1S50N06 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    RF1S50N06LE Harris Semiconductor 50A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs Original PDF
    RF1S50N06LE Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    RF1S50N06LESM Harris Semiconductor 50A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs Original PDF
    RF1S50N06LESM Harris Semiconductor Power MOSFET Product Matrix Original PDF
    RF1S50N06LESM Intersil 50A, 60V, 0.022 ?, Logic Level N-Channel Power MOSFETs Original PDF
    RF1S50N06LESM Toshiba Power MOSFETs Cross Reference Guide Original PDF
    RF1S50N06LESM Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    RF1S50N06LESM9A Intersil 50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs Original PDF
    RF1S50N06LESM9A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    RF1S50N06SM Fairchild Semiconductor 50 A, 60 V, 0.022 ohm, N-Channel Power MOSFET Original PDF
    RF1S50N06SM Harris Semiconductor Power MOSFET Product Matrix Original PDF
    RF1S50N06SM Intersil 50A, 60V, 0.022 ?, N-Channel Power MOSFETs Original PDF
    RF1S50N06SM Toshiba Power MOSFETs Cross Reference Guide Original PDF
    RF1S50N06SM Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    RF1S50N06SM9A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    RF1S50N06 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    fp50n06

    Abstract: F50N06LE FP50N06L FG50N06L RF1S50N06LE RF1S50N06LESM RF1S50N06LESM9A RFG50N06LE RFP50N06LE
    Text: RFG50N06LE, RFP50N06LE, RF1S50N06LE, RF1S50N06LESM S E M I C O N D U C T O R 50A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs July 1996 Features • • • • • • • Packages JEDEC STYLE TO-247 50A, 60V rDS ON = 0.022Ω


    Original     		PDF RFG50N06LE, RFP50N06LE, RF1S50N06LE, RF1S50N06LESM O-247 175oC RF1S50N06LESM fp50n06 F50N06LE FP50N06L FG50N06L RF1S50N06LE RF1S50N06LESM9A RFG50N06LE RFP50N06LE

    RFP50N06

    Abstract: No abstract text available
    Text: RFG50N06, RFP50N06, RF1S50N06SM Data Sheet January 2002 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    Original     		PDF RFG50N06, RFP50N06, RF1S50N06SM 175oC RFP50N06

    F1S50N06

    Abstract: RFP50N06 RF1S50N06SM9A RF1S50N06 RF1S50N06SM RFG50N06 TB334 TA49018 50A60V rfp50n0
    Text: RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM Semiconductor 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature


    Original     		PDF RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM 175oC 98e-1 35E-4 83e-6) 42e-9 1e-30 F1S50N06 RFP50N06 RF1S50N06SM9A RF1S50N06 RF1S50N06SM RFG50N06 TB334 TA49018 50A60V rfp50n0

    fp50n06

    Abstract: c 4072 TA49164 F50N06LE FG50N06L FP50N06L RF1S50N06LESM RF1S50N06LESM9A RFG50N06LE RFP50N06LE
    Text: RFG50N06LE, RFP50N06LE, RF1S50N06LESM Data Sheet October 1999 50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs File Number 4072.3 Features • 50A, 60V These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process


    Original     		PDF RFG50N06LE, RFP50N06LE, RF1S50N06LESM fp50n06 c 4072 TA49164 F50N06LE FG50N06L FP50N06L RF1S50N06LESM RF1S50N06LESM9A RFG50N06LE RFP50N06LE

    fp50n06

    Abstract: 50n06l 50N06LE F50N06LE FG50N06L FP50N06L RF1S50N06LESM RF1S50N06LESM9A RFG50N06LE RFP50N06LE
    Text: RFG50N06LE, RFP50N06LE, RF1S50N06LESM Data Sheet Title FG5 06L P50 6LE 1S5 06L M bt A, V, 22 m, gic vel anwer OSTs) utho October 1999 50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs Features These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process


    Original     		PDF RFG50N06LE, RFP50N06LE, RF1S50N06LESM fp50n06 50n06l 50N06LE F50N06LE FG50N06L FP50N06L RF1S50N06LESM RF1S50N06LESM9A RFG50N06LE RFP50N06LE

    fairchild 9322

    Abstract: 4V251 f1s50n06 fairchild APPLICATION NOTE AN 9322
    Text: RFG50N06, RFP50N06, RF1S50N06SM Data Sheet Title FG5 06, P50 6, 1S5 06S bt A, V, 22 m, anwer OSTs utho eyrds ter- July 1999 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature


    Original     		PDF RFG50N06, RFP50N06, RF1S50N06SM TA49018. fairchild 9322 4V251 f1s50n06 fairchild APPLICATION NOTE AN 9322

    F1S50N06

    Abstract: rfp50n06 equivalent AN7254 AN7260 RF1S50N06SM RF1S50N06SM9A RFG50N06 RFP50N06
    Text: RFG50N06, RFP50N06, RF1S50N06SM Data Sheet July 1999 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs File Number 3575.4 Features • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    Original     		PDF RFG50N06, RFP50N06, RF1S50N06SM 175oC F1S50N06 rfp50n06 equivalent AN7254 AN7260 RF1S50N06SM RF1S50N06SM9A RFG50N06 RFP50N06

    rfp50n06

    Abstract: F1S50N06 fairchild 9322 fairchild APPLICATION NOTE AN 9321 fairchild APPLICATION NOTE AN 9322 rfp50n06 equivalent TA49018 RF1S50N06SM9A AN7254 AN7260
    Text: RFG50N06, RFP50N06, RF1S50N06SM Data Sheet January 2002 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs Features • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    Original     		PDF RFG50N06, RFP50N06, RF1S50N06SM 175oC rfp50n06 F1S50N06 fairchild 9322 fairchild APPLICATION NOTE AN 9321 fairchild APPLICATION NOTE AN 9322 rfp50n06 equivalent TA49018 RF1S50N06SM9A AN7254 AN7260

    RFP50N06

    Abstract: F1S50N06 AN7254 AN7260 RF1S50N06 RF1S50N06SM RF1S50N06SM9A RFG50N06 50A60V
    Text: RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM S E M I C O N D U C T O R 50A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features • • • • • • Packages JEDEC STYLE TO-247 50A, 60V rDS ON = 0.022Ω Temperature Compensating PSPICE Model


    Original     		PDF RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM O-247 175oC RF1S50N06SM RFP50N06 F1S50N06 AN7254 AN7260 RF1S50N06 RF1S50N06SM9A RFG50N06 50A60V

    50n06l

    Abstract: No abstract text available
    Text: RFG50N06LE, RFP50N06LE, RF1S50N06LESM Semiconductor Data Sheet April 1999 50A, 60V, 0.022 Ohm, ESD Rated, Logic Level N-Channel Power MOSFETs 4072.2 Features • 50A, 60V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature


    Original     		PDF RFG50N06LE, RFP50N06LE, RF1S50N06LESM TA49164. Cu94e-5) 50e-4 53e-6) 54e-3 21e-6) 50n06l

    F1S50N06

    Abstract: 123E-3
    Text: RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM S E M I C O N D U C T O R 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature


    Original     		PDF RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM TA49018. 98e-1 35E-4 83e-6) 42e-9 1e-30 F1S50N06 123E-3

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original     		PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    Complementary MOSFETs buz11

    Abstract: irfd120 Power MOSFET Selection Guide HRF3205 MOSFET Selection Guide IRFP440 BUZ71 IRFD120 HRF3205 equivalent IRF610 complementary IRFD110
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 Complementary MOSFETs buz11 irfd120 Power MOSFET Selection Guide HRF3205 MOSFET Selection Guide IRFP440 BUZ71 IRFD120 HRF3205 equivalent IRF610 complementary IRFD110

    std2n52

    Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
    Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232


    Original     		PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent

    50N06LE

    Abstract: No abstract text available
    Text: J W S S em icon du cto r RFG50N06LE, RFP50N06LE, RF1S50N06LESM I April 1999 Data Sheet 50A, 60V, 0.022 Ohm, ESD Rated, Logic Level N-Channel Power MOSFETs Features • 50A,60V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature


    OCR Scan     		PDF RFG50N06LE, RFP50N06LE, RF1S50N06LESM TA49164. 022i2 50e-4 53e-6) 54e-3 21e-6) 50N06LE

    TA49018

    Abstract: RFP50N06 50A60V f1s50n06
    Text: RFG50N06, RFP50N06, RF1S50N06SM in te rd i J u ly 1999 D nta S h e e t F ile N u m b e r Features 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature


    OCR Scan     		PDF RFG50N06, RFP50N06, RF1S50N06SM TA49018. RF1S50N06SM AN7254 AN7260. TA49018 RFP50N06 50A60V f1s50n06

    F1S50N06

    Abstract: RFP50N06 N-channel MOSFET to-247 50a 50A60V tc2516 TA49018 1S50N
    Text: l i H A R R RFG50N06, RFP50N06, RF1S50N06SM IS r f 1S50N06, s e m i c o n d u c t o r 50A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC STYLE TO-247 • 50A, 60V • r D S O N = SOURCE 0.022S1 • Temperature Compensating PSPICE Model


    OCR Scan     		PDF 1S50N06, RFG50N06, RFP50N06, RF1S50N06SM O-247 022S1 RF1S50N06, RF1S50N06SM F1S50N06 RFP50N06 N-channel MOSFET to-247 50a 50A60V tc2516 TA49018 1S50N

    fp50n06

    Abstract: F50N06LE 50N06LE rfp50n06 T0-262AA
    Text: U A D D ic RFG50N06LE. RFP50N06LE, RF1S50N06LE, RF1S50N06LESM 50A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs juiy 1996 Features Packages JEDEC STYLE TO-247 • 50A,60V • rDS ON =0.022i2 • • • • • SOURCE


    OCR Scan     		PDF RFG50N06LE. RFP50N06LE, RF1S50N06LE, RF1S50N06LESM O-247 022i2 RFG50N06LE, RF1S50N06LESM fp50n06 F50N06LE 50N06LE rfp50n06 T0-262AA

    RFPS0N06

    Abstract: TA49018 RFP50N06
    Text: RFG50N06, RFP50N06, RF1S50N06SM in te ik il D a ta S h e e t J u ly 1 9 9 9 50A, BOV, 0.022 Ohm, N-Channel Power MOSFETs F ile N u m b e r 3 5 7 5 .4 Features • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature


    OCR Scan     		PDF RFG50N06, RFP50N06, RF1S50N06SM TA49018. AN7254 AN7260. RFPS0N06 TA49018 RFP50N06

    TA49018

    Abstract: RF1S50N06 F1S50N06 123E-3
    Text: RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM HARRIS S E M I C O N D U C T O R 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature


    OCR Scan     		PDF RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM TA49018. 0-022i2 07e-3 51e-7 05e-9 33e-8) TA49018 RF1S50N06 F1S50N06 123E-3

    FP50N06L

    Abstract: fp50n06 F50N06LE FG50N06L F50n06l RFPS0N06
    Text: RFG50N06LE, RFP50N06LE, RF1S50N06LESM interrii D ata S heet O cto b er 1999 File N u m b e r 4 0 7 2 .3 Features 50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs • 5 0 A ,6 0 V These N-Channel enhancem ent mode power M O S F E Ts are manufactured using the latest manufacturing process


    OCR Scan     		PDF RFG50N06LE, RFP50N06LE, RF1S50N06LESM TA49164. RF1S50N06LESM AN7254 AN7260. FP50N06L fp50n06 F50N06LE FG50N06L F50n06l RFPS0N06

    Untitled

    Abstract: No abstract text available
    Text: RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM HARRIS S E M I C O N D U C T O R 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature


    OCR Scan     		PDF RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM 07e-3 51e-7 05e-9 33e-8) 98e-1 35E-4

    RF1S42N03L

    Abstract: No abstract text available
    Text: HARRI S DI S CRE TE P O W E R MOS F E T LINE T O - 2 5 2 PACKAGE STANDARD GATE DEVICES V dss V r DS(ON) 1 (A ) T O -2 5 2 A A CHANNEL 20V 0.0250 20A RFD20N02SM N 50V 0.3000 8A RFD8P05SM P 0.0470 16A RFD16N05SM N 0.100Q 14A RFD14N05SM N 0.1500 15A RFD15P05SM


    OCR Scan     		PDF RFD20N02SM RFD8P05SM RFD16N05SM RFD14N05SM RFD15P05SM RFD16N06SM RFD14N06SM RFD15P06SM RFD8P06ESM RFD3055SM RF1S42N03L