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    50N06L Search Results

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    50N06L Price and Stock

    Goford Semiconductor G050N06LL

    N60V, 5A,RD<45M@10V,VTH1.0V~2.5V
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    DigiKey G050N06LL Cut Tape 11,800 1
    • 1 $0.55
    • 10 $0.341
    • 100 $0.55
    • 1000 $0.14611
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    G050N06LL Digi-Reel 11,800 1
    • 1 $0.55
    • 10 $0.341
    • 100 $0.55
    • 1000 $0.14611
    • 10000 $0.14611
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    G050N06LL Reel 9,000 3,000
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    G050N06LL Reel 3,000
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    Infineon Technologies AG IPD350N06LGBTMA1

    MOSFET N-CH 60V 29A TO252-3
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    DigiKey IPD350N06LGBTMA1 Cut Tape 3,805 1
    • 1 $1.39
    • 10 $0.875
    • 100 $1.39
    • 1000 $0.41378
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    IPD350N06LGBTMA1 Digi-Reel 3,805 1
    • 1 $1.39
    • 10 $0.875
    • 100 $1.39
    • 1000 $0.41378
    • 10000 $0.41378
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    IPD350N06LGBTMA1 Reel 2,500 2,500
    • 1 -
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    • 10000 $0.36976
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    Newark IPD350N06LGBTMA1 Cut Tape 1
    • 1 $1.45
    • 10 $0.91
    • 100 $0.603
    • 1000 $0.43
    • 10000 $0.43
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    Rochester Electronics IPD350N06LGBTMA1 2,449 1
    • 1 $0.3118
    • 10 $0.3118
    • 100 $0.2931
    • 1000 $0.265
    • 10000 $0.265
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    TME IPD350N06LGBTMA1 2,195 1
    • 1 $0.779
    • 10 $0.492
    • 100 $0.379
    • 1000 $0.353
    • 10000 $0.353
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    EBV Elektronik IPD350N06LGBTMA1 15 Weeks 2,500
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    onsemi FQP50N06L

    MOSFET N-CH 60V 52.4A TO220-3
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    DigiKey FQP50N06L Tube
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    Newark FQP50N06L Bulk 1,000
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    Bristol Electronics FQP50N06L 30
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    onsemi FQPF50N06L

    MOSFET N-CH 60V 32.6A TO220F
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    DigiKey FQPF50N06L Tube
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    Rochester Electronics LLC FQI50N06LTU

    MOSFET N-CH 60V 52.4A I2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FQI50N06LTU Tube 211
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    • 1000 $1.42
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    Find more 50N06L price and stock on Findchips.com

    50N06L Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    50N06LE Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    50N06LE Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    50N06L-X-TA3-T Unisonic Technologies 50 Amps, 60 Volts N-CHANNEL POWER MOSFET Original PDF

    50N06L Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    50N60

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 1  DESCRIPTION TO-263 The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max


    Original     		50N06 O-263 50N06 O-220 O-251 O-220F QW-R502-088 50N60 PDF

    fp50n06

    Abstract: F50N06LE FP50N06L FG50N06L RF1S50N06LE RF1S50N06LESM RF1S50N06LESM9A RFG50N06LE RFP50N06LE
    Text: 50N06LE, 50N06LE, 50N06LE, 50N06LESM S E M I C O N D U C T O R 50A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs July 1996 Features • • • • • • • Packages JEDEC STYLE TO-247 50A, 60V rDS ON = 0.022Ω


    Original     		RFG50N06LE, RFP50N06LE, RF1S50N06LE, RF1S50N06LESM O-247 175oC RF1S50N06LESM fp50n06 F50N06LE FP50N06L FG50N06L RF1S50N06LE RF1S50N06LESM9A RFG50N06LE RFP50N06LE PDF

    mosfet 50a 25v to 252

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 TO-263  DESCRIPTION The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max


    Original     		50N06 O-263 50N06 O-251 O-220 O-220F QW-R502-088 mosfet 50a 25v to 252 PDF

    50N06 to 252

    Abstract: MOSFET 50N06 50n06l 50N06 50N06 E 50N60L-TM3-T 50n06 to-252 50N06L-TF3-T 50N60G-TM3-T power MOSFET 50n06
    Text: UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max


    Original     		50N06 O-252 50N06 O-251 O-220 O-220F QW-R502-088 50N06 to 252 MOSFET 50N06 50n06l 50N06 E 50N60L-TM3-T 50n06 to-252 50N06L-TF3-T 50N60G-TM3-T power MOSFET 50n06 PDF

    50n06

    Abstract: MOSFET 50N06 50N06 to 252
    Text: UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 1  DESCRIPTION TO-263 The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max


    Original     		50N06 O-263 50N06 O-220 O-220F O-220F3 O-251 O-252 O-252D QW-R502-088 MOSFET 50N06 50N06 to 252 PDF

    50n06

    Abstract: MOSFET 50N06 Equivalent 50N06 50N06 DATASHEET p 50n06 power MOSFET 50n06 50N06-TF3-T 50N06LT TO-220 50n06 25V 1A power MOSFET TO-220
    Text: UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max


    Original     		50N06 50N06 50N06L QW-R502-088 MOSFET 50N06 Equivalent 50N06 50N06 DATASHEET p 50n06 power MOSFET 50n06 50N06-TF3-T 50N06LT TO-220 50n06 25V 1A power MOSFET TO-220 PDF

    fp50n06

    Abstract: c 4072 TA49164 F50N06LE FG50N06L FP50N06L RF1S50N06LESM RF1S50N06LESM9A RFG50N06LE RFP50N06LE
    Text: 50N06LE, 50N06LE, 50N06LESM Data Sheet October 1999 50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs File Number 4072.3 Features • 50A, 60V These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process


    Original     		RFG50N06LE, RFP50N06LE, RF1S50N06LESM fp50n06 c 4072 TA49164 F50N06LE FG50N06L FP50N06L RF1S50N06LESM RF1S50N06LESM9A RFG50N06LE RFP50N06LE PDF

    fp50n06

    Abstract: 50n06l 50N06LE F50N06LE FG50N06L FP50N06L RF1S50N06LESM RF1S50N06LESM9A RFG50N06LE RFP50N06LE
    Text: 50N06LE, 50N06LE, 50N06LESM Data Sheet Title FG5 06L P50 6LE 1S5 06L M bt A, V, 22 m, gic vel anwer OSTs) utho October 1999 50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs Features These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process


    Original     		RFG50N06LE, RFP50N06LE, RF1S50N06LESM fp50n06 50n06l 50N06LE F50N06LE FG50N06L FP50N06L RF1S50N06LESM RF1S50N06LESM9A RFG50N06LE RFP50N06LE PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 50N06-F Preliminary Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 50N06-F is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max


    Original     		50N06-F 50N06-F 50N06L-TN3-R 50N06G-TNat QW-R502-A83 PDF

    a50n06

    Abstract: 50n06 MOSFET 50N06 50N06LT Equivalent 50N06 50N06 DATASHEET 50N06L power MOSFET 50n06 50N06-TF3-T p 50n06
    Text: UNISONIC TECHNOLOGIES CO., LTD 50N06 MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max


    Original     		50N06 O-220 50N06 O-220F 50N06L QW-R502-088 a50n06 MOSFET 50N06 50N06LT Equivalent 50N06 50N06 DATASHEET 50N06L power MOSFET 50n06 50N06-TF3-T p 50n06 PDF

    50n06l

    Abstract: No abstract text available
    Text: 50N06LE, 50N06LE, 50N06LESM Semiconductor Data Sheet April 1999 50A, 60V, 0.022 Ohm, ESD Rated, Logic Level N-Channel Power MOSFETs 4072.2 Features • 50A, 60V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature


    Original     		RFG50N06LE, RFP50N06LE, RF1S50N06LESM TA49164. Cu94e-5) 50e-4 53e-6) 54e-3 21e-6) 50n06l PDF

    Equivalent 50N06

    Abstract: MOSFET 50N06 50n06 TO-252 50n06 50N06L 60V 2A MOSFET N-channel 50N06LT 50N06 DATASHEET mosfet driver L038
    Text: UNISONIC TECHNOLOGIES CO., LTD 50N06 Power MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max


    Original     		50N06 50N06 QW-R502-088 Equivalent 50N06 MOSFET 50N06 TO-252 50n06 50N06L 60V 2A MOSFET N-channel 50N06LT 50N06 DATASHEET mosfet driver L038 PDF

    50N06LE

    Abstract: No abstract text available
    Text: J W S S em icon du cto r 50N06LE, 50N06LE, 50N06LESM I April 1999 Data Sheet 50A, 60V, 0.022 Ohm, ESD Rated, Logic Level N-Channel Power MOSFETs Features • 50A,60V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature


    OCR Scan     		RFG50N06LE, RFP50N06LE, RF1S50N06LESM TA49164. 022i2 50e-4 53e-6) 54e-3 21e-6) 50N06LE PDF

    fp50n06

    Abstract: F50N06LE 50N06LE rfp50n06 T0-262AA
    Text: U A D D ic 50N06LE. 50N06LE, 50N06LE, 50N06LESM 50A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs juiy 1996 Features Packages JEDEC STYLE TO-247 • 50A,60V • rDS ON =0.022i2 • • • • • SOURCE


    OCR Scan     		RFG50N06LE. RFP50N06LE, RF1S50N06LE, RF1S50N06LESM O-247 022i2 RFG50N06LE, RF1S50N06LESM fp50n06 F50N06LE 50N06LE rfp50n06 T0-262AA PDF