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    RF1S50N06SM9A Price and Stock

    Rochester Electronics LLC RF1S50N06SM9A

    N-CHANNEL POWER MOSFET
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    DigiKey RF1S50N06SM9A Bulk 9,898 317
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    Rochester Electronics LLC RF1S50N06SM9AS2551

    MOSFET 60V 50A
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    DigiKey RF1S50N06SM9AS2551 Bulk 653 293
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    onsemi RF1S50N06SM9A

    MOSFET - Bulk (Alt: RF1S50N06SM9A)
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    Avnet Americas RF1S50N06SM9A Bulk 4 Weeks 382
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    Renesas Electronics Corporation RF1S50N06SM9AS2551

    - Bulk (Alt: RF1S50N06SM9AS2551)
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    Avnet Americas RF1S50N06SM9AS2551 Bulk 4 Weeks 353
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    Fairchild Semiconductor Corporation RF1S50N06SM9A

    50A, 60V, N-Channel Power MOSFET, TO-263AB '
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    Rochester Electronics RF1S50N06SM9A 9,898 1
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    Find more RF1S50N06SM9A price and stock on Findchips.com

    RF1S50N06SM9A Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RF1S50N06SM9A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    RF1S50N06SM9A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RFP50N06

    Abstract: No abstract text available
    Text: RFG50N06, RFP50N06, RF1S50N06SM Data Sheet January 2002 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    Original     		PDF RFG50N06, RFP50N06, RF1S50N06SM 175oC RFP50N06

    F1S50N06

    Abstract: RFP50N06 RF1S50N06SM9A RF1S50N06 RF1S50N06SM RFG50N06 TB334 TA49018 50A60V rfp50n0
    Text: RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM Semiconductor 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature


    Original     		PDF RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM 175oC 98e-1 35E-4 83e-6) 42e-9 1e-30 F1S50N06 RFP50N06 RF1S50N06SM9A RF1S50N06 RF1S50N06SM RFG50N06 TB334 TA49018 50A60V rfp50n0

    12SnOFC

    Abstract: PMC-90 PMC-90 leadframe material 92.5Pb5Sn2.5Ag Tamac4 MKT-TO263A02 pmc90 PMC-90 to-263 RF1S640SM9A FDB2532
    Text: Date Created: 12/30/2003 Date Issued: 1/15/2004 PCN # 20040002 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will


    Original     		PDF fairchildF76143S3S HUF76145S3S HUF76419S3ST HUF76432S3S HUF76439S3S HUF76445S3ST HUF76639S3S HUF76645S3ST ISL9N303AS3 ISL9N306AS3ST 12SnOFC PMC-90 PMC-90 leadframe material 92.5Pb5Sn2.5Ag Tamac4 MKT-TO263A02 pmc90 PMC-90 to-263 RF1S640SM9A FDB2532

    fairchild 9322

    Abstract: 4V251 f1s50n06 fairchild APPLICATION NOTE AN 9322
    Text: RFG50N06, RFP50N06, RF1S50N06SM Data Sheet Title FG5 06, P50 6, 1S5 06S bt A, V, 22 m, anwer OSTs utho eyrds ter- July 1999 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature


    Original     		PDF RFG50N06, RFP50N06, RF1S50N06SM TA49018. fairchild 9322 4V251 f1s50n06 fairchild APPLICATION NOTE AN 9322

    F1S50N06

    Abstract: rfp50n06 equivalent AN7254 AN7260 RF1S50N06SM RF1S50N06SM9A RFG50N06 RFP50N06
    Text: RFG50N06, RFP50N06, RF1S50N06SM Data Sheet July 1999 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs File Number 3575.4 Features • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    Original     		PDF RFG50N06, RFP50N06, RF1S50N06SM 175oC F1S50N06 rfp50n06 equivalent AN7254 AN7260 RF1S50N06SM RF1S50N06SM9A RFG50N06 RFP50N06

    rfp50n06

    Abstract: F1S50N06 fairchild 9322 fairchild APPLICATION NOTE AN 9321 fairchild APPLICATION NOTE AN 9322 rfp50n06 equivalent TA49018 RF1S50N06SM9A AN7254 AN7260
    Text: RFG50N06, RFP50N06, RF1S50N06SM Data Sheet January 2002 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs Features • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    Original     		PDF RFG50N06, RFP50N06, RF1S50N06SM 175oC rfp50n06 F1S50N06 fairchild 9322 fairchild APPLICATION NOTE AN 9321 fairchild APPLICATION NOTE AN 9322 rfp50n06 equivalent TA49018 RF1S50N06SM9A AN7254 AN7260

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    F1S50N06

    Abstract: 123E-3
    Text: RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM S E M I C O N D U C T O R 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature


    Original     		PDF RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM TA49018. 98e-1 35E-4 83e-6) 42e-9 1e-30 F1S50N06 123E-3

    TA49018

    Abstract: RFP50N06 50A60V f1s50n06
    Text: RFG50N06, RFP50N06, RF1S50N06SM in te rd i J u ly 1999 D nta S h e e t F ile N u m b e r Features 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature


    OCR Scan     		PDF RFG50N06, RFP50N06, RF1S50N06SM TA49018. RF1S50N06SM AN7254 AN7260. TA49018 RFP50N06 50A60V f1s50n06

    F1S50N06

    Abstract: RFP50N06 N-channel MOSFET to-247 50a 50A60V tc2516 TA49018 1S50N
    Text: l i H A R R RFG50N06, RFP50N06, RF1S50N06SM IS r f 1S50N06, s e m i c o n d u c t o r 50A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC STYLE TO-247 • 50A, 60V • r D S O N = SOURCE 0.022S1 • Temperature Compensating PSPICE Model


    OCR Scan     		PDF 1S50N06, RFG50N06, RFP50N06, RF1S50N06SM O-247 022S1 RF1S50N06, RF1S50N06SM F1S50N06 RFP50N06 N-channel MOSFET to-247 50a 50A60V tc2516 TA49018 1S50N

    RFPS0N06

    Abstract: TA49018 RFP50N06
    Text: RFG50N06, RFP50N06, RF1S50N06SM in te ik il D a ta S h e e t J u ly 1 9 9 9 50A, BOV, 0.022 Ohm, N-Channel Power MOSFETs F ile N u m b e r 3 5 7 5 .4 Features • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature


    OCR Scan     		PDF RFG50N06, RFP50N06, RF1S50N06SM TA49018. AN7254 AN7260. RFPS0N06 TA49018 RFP50N06

    TA49018

    Abstract: RF1S50N06 F1S50N06 123E-3
    Text: RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM HARRIS S E M I C O N D U C T O R 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature


    OCR Scan     		PDF RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM TA49018. 0-022i2 07e-3 51e-7 05e-9 33e-8) TA49018 RF1S50N06 F1S50N06 123E-3

    Untitled

    Abstract: No abstract text available
    Text: RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM HARRIS S E M I C O N D U C T O R 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature


    OCR Scan     		PDF RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM 07e-3 51e-7 05e-9 33e-8) 98e-1 35E-4