88E3082
Abstract: Marvell prestera 88E3083 Prestera 88 Marvell Marvell prestera 98 Marvell PHY register map Marvell prestera-ex MARVELL 88 98MX620
Text: Marvell Technology Restricted Document Do Not Reproduce Pre-release Draft This is the html version of the file . G o o g l e automatically generates html versions of documents as we crawl the web.
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98MX610
98MX620
98MX630
98mx610
98MX610/620/630
48-Port
88E3082
Marvell prestera
88E3083
Prestera
88 Marvell
Marvell prestera 98
Marvell PHY register map
Marvell prestera-ex
MARVELL 88
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presto II
Abstract: M27C405 M27V405 PLCC32 TSOP32 1N914
Text: M27V405 4 Mbit 512Kb x 8 Low Voltage OTP EPROM LOW VOLTAGE READ OPERATION: 3V to 3.6V FAST ACCESS TIME: 120ns LOW POWER CONSUMPTION: – Active Current 15mA at 5MHz – Standby Current 20µA PROGRAMMING VOLTAGE: 12.75V ± 0.25V PROGRAMMING TIMES: – Typical 48sec. (PRESTO II Algorithm)
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M27V405
512Kb
120ns
48sec.
27sec.
M27V405
presto II
M27C405
PLCC32
TSOP32
1N914
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1N914
Abstract: M28F256 PDIP32 PLCC32 memory write protect m28f512
Text: M28F256 256K 32K x 8, Chip Erase FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE IN 1s RANGE
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M28F256
PLCC32
PDIP32
M28F256
1N914
PDIP32
PLCC32
memory write protect m28f512
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1N914
Abstract: M28F512 PDIP32 PLCC32
Text: M28F512 512K 64K x 8, Chip Erase FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE in 1s RANGE
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M28F512
M28F512
1N914
PDIP32
PLCC32
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PDF
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Untitled
Abstract: No abstract text available
Text: M27V405 4 Mbit 512Kb x 8 Low Voltage OTP EPROM DATA BRIEFING LOW VOLTAGE READ OPERATION: 3V to 3.6V FAST ACCESS TIME: 120ns LOW POWER CONSUMPTION: – Active Current 15mA – Standby Current 20µA PROGRAMMING VOLTAGE: 12.75V ± 0.25V PROGRAMMING TIMES: – Typical 48sec. (PRESTO II Algorithm)
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M27V405
512Kb
120ns
48sec.
27sec.
M27V405
150ns
180ns
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PDF
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1N914
Abstract: M28F256 PDIP32 PLCC32 BP-DIP32
Text: M28F256 256K 32K x 8, Chip Erase FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE IN 1s RANGE
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M28F256
PLCC32
PDIP32
M28F256
1N914
PDIP32
PLCC32
BP-DIP32
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M28F101
Abstract: PDIP32 PLCC32 TSOP32
Text: M28F101 1 Megabit 128K x 8, Chip Erase FLASH MEMORY FAST ACCESS TIME: 70ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE in 1s RANGE
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M28F101
PLCC32
PDIP32
TSOP32
M28F101
PDIP32
PLCC32
TSOP32
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PDF
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plcc32 pinout
Abstract: 1N914 PLCC32 TSOP32
Text: M28W201 2 Mbit 256Kb x8, Bulk Low Voltage Flash Memory PRELIMINARY DATA 2.7V to 3.6V SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 100ns BYTE PROGRAMMING TIME: 10µs typical (PRESTO F Algorithm) ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION
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M28W201
256Kb
100ns
M28W201
plcc32 pinout
1N914
PLCC32
TSOP32
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M28F101
Abstract: PDIP32 PLCC32 TSOP32
Text: M28F101 1 Megabit 128K x 8, Chip Erase FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE in 1s RANGE
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M28F101
PLCC32
PDIP32
TSOP32
M28F101
PDIP32
PLCC32
TSOP32
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M28F512-25
Abstract: 1N914 M28F512 PDIP32 PLCC32
Text: M28F512 512K 64K x 8, Chip Erase FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE in 1s RANGE
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M28F512
M28F512
M28F512-25
1N914
PDIP32
PLCC32
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M28F102
Abstract: PLCC44
Text: M28F102 1 Megabit 64K x 16, Chip Erase FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE in 1s RANGE
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M28F102
PLCC44
TSOP40
M28F102
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1N914
Abstract: M28F512 PDIP32 PLCC32
Text: M28F512 512K 64K x 8, Chip Erase FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE in 1s RANGE
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M28F512
M28F512
1N914
PDIP32
PLCC32
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M28F101
Abstract: PDIP32 PLCC32 TSOP32
Text: M28F101 1 Megabit 128K x 8, Chip Erase FLASH MEMORY FAST ACCESS TIME: 70ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE in 1s RANGE
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M28F101
PLCC32
PDIP32
TSOP32
M28F101
PDIP32
PLCC32
TSOP32
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1N914
Abstract: M28F256 PDIP32 PLCC32
Text: M28F256 256K 32K x 8, Chip Erase FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE IN 1s RANGE
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M28F256
PLCC32
PDIP32
M28F256
1N914
PDIP32
PLCC32
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M28F102
Abstract: PLCC44
Text: M28F102 1 Megabit 64K x 16, Chip Erase FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE in 1s RANGE
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M28F102
PLCC44
TSOP40
PLCC44
M28F102
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1N914
Abstract: M28F256 PDIP32 PLCC32 memory write protect m28f512
Text: M28F256 256K 32K x 8, Chip Erase FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE IN 1s RANGE
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M28F256
PLCC32
PDIP32
M28F256
1N914
PDIP32
PLCC32
memory write protect m28f512
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ding dong
Abstract: MO chip Transistor bt8031 melody ding dong Elise BT8031-XX BT803
Text: TECHNICAL DATA BT8031-XX FEATURES FUNCTIONS • 127-note ROM memory • 2.0V to 5.0V power supply and low power consumption • RC oscillator on chip • One shot or level hold mode mask option • Sound range: 2.5 octaves, 2 series • Tempo: 16 kinds (presto-largo)
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BT8031-XX
127-note
BT8031-XX
001BA)
ding dong
MO chip Transistor
bt8031
melody ding dong
Elise
BT803
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ding dong
Abstract: MO chip Transistor Elise F r Elise KK8031-XX 127-note
Text: TECHNICAL DATA KK8031-XX FEATURES FUNCTIONS • 127-note ROM memory • 2.0V to 5.0V power supply and low power consumption • RC oscillator on chip • One shot or level hold mode mask option • Sound range: 2.5 octaves, 2 series • Tempo: 16 kinds (presto-largo)
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KK8031-XX
127-note
KK8031-XX
001BA)
ding dong
MO chip Transistor
Elise
F r Elise
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2SF256
Abstract: M28F256A
Text: rz7 SCS-THOMSON M28F256A CMOS 256K 32K x 8 FLASH MEMORY * FAST ACCESS TIME: 100ns • LOW POWER CONSUMPTION - Standby Current: 200|iA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMING TIME 10jas (PRESTO F ALGORITHM)
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OCR Scan
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M28F256A
100ns
10jas
M28F256A
PDIP32
PLCC32
2SF256
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PDF
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON M28W201 IIIIM J ì ILIì M W IIÈ Ì 2 Mb 256K x 8, Chip Erase LOW VOLTAGE FLASH MEMORY PRELIMINARY DATA 2.7V to 3.6V SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 100ns BYTE PROGRAMMING TIME: 10|is typical (PRESTO F Algorithm) ELECTRICAL CHIP ERASE in 1s RANGE
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OCR Scan
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M28W201
100ns
M28W201
TSOP32
TSOP32
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PDF
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1N914
Abstract: M28F201 PDIP32 PLCC32 VA00644
Text: 5 7 , SGS-THOMSON M28F201 CMOS 2 Megabit 256K x 8 FLASH MEMORY ADVANCE DATA FAST ACC ESS TIM E: 100ns LOW POWER CONSUMPTION - Standby Current: 10O^A Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMM ING VOLTAGE TYPICAL BYTE PROGRAMM ING TIME 10(is (PRESTO F ALGORITHM)
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OCR Scan
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M28F201
100ns
M28F201
PDIP32
PLCC32
PTS032
1N914
VA00644
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PDF
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ah rzj
Abstract: 1N914 M28F256 Scans-005192 A0-A14
Text: M28F256 256K 32K x 8, Chip Erase FLASH MEMORY • FAST ACCESS TIME: 90ns • LOW POWER CONSUMPTION - Standby Current: 100pA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMMING TIME 10us (PRESTO F ALGORITHM) ■ ELECTRICAL CHIP ERASE IN 1s RANGE
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OCR Scan
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M28F256
100pA
M28F256
su18/20
PLCC32
PLCC32
ah rzj
1N914
Scans-005192
A0-A14
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PDF
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BT66T-19L
Abstract: BT66T pin configuration NPN transistor c945 NPN BT66T-02L SImple Melody Generator SImple Melody Generator bt66t12l BT66T19L bt66 melody generator SImple Melody Generator bt66t19l
Text: BT66T SIMPLE MELODY GENERATOR FEATURES * One shot or level hold mode * Plays a melody consisting of 64 note * RC oscillator on chip * 64-note ROM memory * Sound range : 2 octaves * Tempo : 15 kinds presto-largo * Direct piezo drive * Solution of automatic stop or repeat of the melody
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OCR Scan
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BT66T
64-note
BT66T-19L
BT66T-02L
BT66T-08L
BT66T-12L
BT66T-68L
1500X1000
110X110
BT66T
pin configuration NPN transistor c945 NPN
SImple Melody Generator
SImple Melody Generator bt66t12l
BT66T19L
bt66
melody generator
SImple Melody Generator bt66t19l
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28F256 CMOS FLASH
Abstract: No abstract text available
Text: SGS-THOMSON M28F256 1ILG 256K 32 x 8 CMOS FLASH MEMORY ADVANCE DATA • FLASH ELECTRICAL CHIP ERASE IN 1 SEC OND RANGE. ■ PRESTO F PROGRAMMING TYPICAL BYTE PROGRAM TIME : 100 jus. ■ 12 V VPP SUPPLY. ■ 100 TO 10.000 ERASE/PROGRAM CYCLES. ■ VERY FAST ACCESS TIME : 100 ns.
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OCR Scan
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M28F256
SPEED/10
28F256 CMOS FLASH
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