1N914
Abstract: M28F201 PDIP32 PLCC32 VA00644
Text: 5 7 , SGS-THOMSON M28F201 CMOS 2 Megabit 256K x 8 FLASH MEMORY ADVANCE DATA FAST ACC ESS TIM E: 100ns LOW POWER CONSUMPTION - Standby Current: 10O^A Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMM ING VOLTAGE TYPICAL BYTE PROGRAMM ING TIME 10(is (PRESTO F ALGORITHM)
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M28F201
100ns
M28F201
PDIP32
PLCC32
PTS032
1N914
VA00644
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Untitled
Abstract: No abstract text available
Text: Æ 7 SCS-THOMSON ^ 7 # M28F201 [iD ê œ iL K g ^ O iQ ig i CMOS 2 Megabit 256K x 8 FLASH MEMORY ADVANCE DATA • FAST ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION - Standby Current: 100p.A Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE
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M28F201
100ns
M28F201
PDIP32
PLCC32
PTS032
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Untitled
Abstract: No abstract text available
Text: 52E D 7 ^ 2 3 7 G03777Ô b ô3 ISGTH T ~ K -\i -2 £ S G S -1 H 0 M S 0 N M28F101 io S f, S - T H O M S O N CMOS 1 Megabit 128K x 8 FLASH MEMORY ADVANCE DATA FAST ACCESS TIME: 100ns LOW POWER CONSUMPTION - Standby Current: 10OpA Max 10,000 ERASE/PROGRAM CYCLES
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G03777Ô
M28F101
100ns
10OpA
M28F101
D037713
PDIP32
PLCC32
PTS032
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Untitled
Abstract: No abstract text available
Text: 52E D • 7 q g q 5 37 0037610 ATT ■ SGTH T~H¿-1 3 -Z i S C S -T H O M S O N “ s 6 s - thohson M ilL iO T R O O i M 28F 201 CMOS 2 Megabit 256K x 8 FLASH MEMORY ADVANCE DATA FAST ACCESS TIME: 100ns LOW POWER CONSUMPTION - Standby Current: 100|iA Max
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100ns
M28F201
M28F201
DD37A55
PDIP32
PLCC32
PTS032
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