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    M28F102 Search Results

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    M28F102 Price and Stock

    STMicroelectronics M28F102-150XK3

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    Bristol Electronics M28F102-150XK3 962
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    STMicroelectronics M28F102-150XK3CT

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    Bristol Electronics M28F102-150XK3CT 375 4
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    • 10 $1.4625
    • 100 $0.5484
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    Quest Components M28F102-150XK3CT 300
    • 1 $1.95
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    • 100 $0.585
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    STMicroelectronics M28F102-120K1

    NOR Flash, 64K x 16, 44 Pin, Plastic, PLCC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components M28F102-120K1 1,868
    • 1 $2.25
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    M28F102 Datasheets (122)

    Part ECAD Model Manufacturer Description Curated Type PDF
    M28F102 STMicroelectronics 1 Megabit (64K x 16, Chip Erase) FLASH MEMORY Original PDF
    M28F102 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    M28F102-100K1 SGS-Thomson EEPROM Parallel Async Original PDF
    M28F102-100K1TR STMicroelectronics 1 Megabit (64K x 16, Chip Erase) FLASH MEMORY Original PDF
    M28F102-100K3 sgS-Thomson EEPROM Parallel Async Original PDF
    M28F102-100K3TR STMicroelectronics 1 Megabit (64K x 16, Chip Erase) FLASH MEMORY Original PDF
    M28F102-100K6 sgS-Thomson EEPROM Parallel Async Original PDF
    M28F102-100K6TR STMicroelectronics 1 Megabit (64K x 16, Chip Erase) FLASH MEMORY Original PDF
    M28F102-100N1 SGS-Thomson EEPROM Parallel Async Original PDF
    M28F102-100N1TR STMicroelectronics 1 Megabit (64K x 16, Chip Erase) FLASH MEMORY Original PDF
    M28F102-100N3 SGS-Thomson EEPROM Parallel Async Original PDF
    M28F102-100N3TR STMicroelectronics 1 Megabit (64K x 16, Chip Erase) FLASH MEMORY Original PDF
    M28F102-100N6 sgS-Thomson EEPROM Parallel Async Original PDF
    M28F102-100N6TR STMicroelectronics 1 Megabit (64K x 16, Chip Erase) FLASH MEMORY Original PDF
    M28F102-100XK1 SGS-Thomson EEPROM Parallel Async Original PDF
    M28F102-100XK1TR STMicroelectronics 1 Megabit (64K x 16, Chip Erase) FLASH MEMORY Original PDF
    M28F102-100XK3 SGS-Thomson EEPROM Parallel Async Original PDF
    M28F102-100XK3TR STMicroelectronics 1 Megabit (64K x 16, Chip Erase) FLASH MEMORY Original PDF
    M28F102-100XK6 SGS-Thomson EEPROM Parallel Async Original PDF
    M28F102-100XK6TR STMicroelectronics 1 Megabit (64K x 16, Chip Erase) FLASH MEMORY Original PDF
    ...

    M28F102 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M28F102

    Abstract: PLCC44
    Text: M28F102 1 Mbit 64Kb x16, Bulk Flash Memory 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 5µA typical 10,000 ERASE/PROGRAM CYCLES


    Original     		PDF M28F102 0020h 0050h M28F102 PLCC44

    Untitled

    Abstract: No abstract text available
    Text: QUALIFICATION REPORT M28F102 1 Megabit 64K x 16 CMOS T5 FLASH MEMORY in TSOP40 INTRODUCTION The M28F102 is a 1 Megabit FLASH MEMORY organised as 64K x 16 bits. It is manufactured in the SGS-THOMSON Advanced CMOS 0.8 micron T5 process which has been especially


    Original     		PDF M28F102 TSOP40 120ns

    M28F102

    Abstract: PLCC44 QRFL9810 PLCC44 package
    Text: QRFL9810 QUALIFICATION REPORT M28F102 T5-U20: 1 Mbit x16 Dual Supply Flash Memory INTRODUCTION The M28F102 is a 1 Mbit Dual Supply (5V/12V) Flash memory organized as 64 KByte of 16 bits each. It is offered in TSOP40 and PLCC44 packages. The M28F102 is manufactured with the STMicroelectronics advanced CMOS 0.8 micron T5-U20 (-20%


    Original     		PDF QRFL9810 M28F102 T5-U20: V/12V) TSOP40 PLCC44 T5-U20 QRFL9810 PLCC44 package

    PLCC44 pinout

    Abstract: PLCC44 M28F102 A534
    Text: M28F102 1 Mbit 64Kb x16, Bulk Erase Flash Memory DATA BRIEFING 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 5µA typical


    Original     		PDF M28F102 0020h 0050h M28F102 120ns 150ns AI00629D PLCC44 TSOP40 PLCC44 pinout PLCC44 A534

    M28F102

    Abstract: PLCC44
    Text: M28F102 1 Mb 64K x 16, Bulk Erase FLASH MEMORY DATA BRIEFING 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 100ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 100µA max


    Original     		PDF M28F102 100ns 0020h 0050h M28F102 interface100ns 120ns 150ns AI00629D PLCC44 PLCC44

    M28F102

    Abstract: No abstract text available
    Text: M28F102 1 Megabit 64K x 16, Chip Erase FLASH MEMORY DATA BRIEFING FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE in 1s RANGE


    Original     		PDF M28F102 PLCC44 TSOP40 PLCC44 TSOP40 M28F102 micr11 100ns 120ns

    QR107

    Abstract: TSOP40 Flash M28F101 M28F102 PLCC44
    Text: QUALIFICATION REPORT M28F102 1 Megabit 64K x 16 CMOS T5-U20 FLASH MEMORY in TSOP40 and PLCC44 INTRODUCTION The M28F102 is a 1 Megabit FLASH Memory organised as 64K x 16 bits. It is manufactured in the SGS-THOMSON Advanced CMOS 0.8 micron T5-U20 (-20% upgrade) process which has been expecially


    Original     		PDF M28F102 T5-U20 TSOP40 PLCC44 T5-U20 100ns TSOP40 PLCC44 QR107 TSOP40 Flash M28F101

    Untitled

    Abstract: No abstract text available
    Text: QUALIFICATION REPORT M28F102 1 Megabit 64K x 16 CMOS T5-U20 FLASH MEMORY in TSOP40 and PLCC44 INTRODUCTION The M28F102 is a 1 Megabit FLASH Memory organised as 64K x 16 bits. It is manufactured in the SGS-THOMSON Advanced CMOS 0.8 micron T5-U20 (-20% upgrade) process which has been expecially


    Original     		PDF M28F102 T5-U20 TSOP40 PLCC44 T5-U20 100ns TSOP40 PLCC44

    M28F102

    Abstract: PLCC44
    Text: M28F102 1 Megabit 64K x 16, Chip Erase FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE in 1s RANGE


    Original     		PDF M28F102 PLCC44 TSOP40 M28F102

    CDIP32

    Abstract: 0795 M28F102 QR121
    Text: QUALIFICATION REPORT M28F102 T5-U20: 1 Mb x16 FLASH MEMORY in TSOP40, AGRATE F8 DIFFUSION LINE INTRODUCTION The M28F102 is a 1 Mb Dual Supply (5/12V) Flash memory organised as 64K bytes x 16 bits. It is manufactured in the SGS-THOMSON Advanced CMOS 0.8 micron T5-U20 (-20% upgrade) process which


    Original     		PDF M28F102 T5-U20: TSOP40, 5/12V) T5-U20 100ns MPG/NV/7006. CDIP32 0795 QR121

    TSOP40 Flash

    Abstract: M28F102 QR105
    Text: QUALIFICATION REPORT M28F102 1 Megabit 64K x 16 CMOS T5 FLASH MEMORY in TSOP40 INTRODUCTION The M28F102 is a 1 Megabit FLASH MEMORY organised as 64K x 16 bits. It is manufactured in the SGS-THOMSON Advanced CMOS 0.8 micron T5 process which has been especially


    Original     		PDF M28F102 TSOP40 M28F102 120ns TSOP40 Flash QR105

    M28F102

    Abstract: PLCC44
    Text: M28F102 1 Megabit 64K x 16, Chip Erase FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE in 1s RANGE


    Original     		PDF M28F102 PLCC44 TSOP40 PLCC44 M28F102

    AN1252

    Abstract: st m29F102bb DATASHEET AN1167 M28F102 M29F102BB PLCC44 st m29F102bb
    Text: AN1252 APPLICATION NOTE Replacing the M28F102 with the M29F102BB Flash Memory CONTENTS • INTRODUCTION ■ HARDWARE COMPATIBILITY ■ SOFTWARE UPGRADE ■ OTHER CONSIDERATIONS ■ CONCLUSION INTRODUCTION This application note will help you to replace the M28F102 in


    Original     		PDF AN1252 M28F102 M29F102BB M29F102BB. AN1252 st m29F102bb DATASHEET AN1167 PLCC44 st m29F102bb

    AN1167

    Abstract: AN1252 M28F102 M29F102BB PLCC44 st m29F102bb
    Text: AN1252 APPLICATION NOTE Replacing the M28F102 with the M29F102BB Flash Memory CONTENTS • INTRODUCTION ■ HARDWARE COMPATIBILITY ■ SOFTWARE UPGRADE ■ OTHER CONSIDERATIONS ■ CONCLUSION INTRODUCTION This application note will help you to replace the M28F102 in


    Original     		PDF AN1252 M28F102 M29F102BB M29F102BB. AN1167 AN1252 PLCC44 st m29F102bb

    Untitled

    Abstract: No abstract text available
    Text: 5 M28F102 Ï. 1 Mbit 64Kb x16, Bulk Flash Memory 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMMING TIME: 1O^is typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION - Stand-by Current: 5 ^A typical 10,000 ERASE/PROGRAM CYCLES


    OCR Scan     		PDF M28F102 0020h 0050h PLCC44 M28F102

    M28F102

    Abstract: PLCC44 A1006
    Text: /T 7 S G S -T H O M S O N M28F102 ^7m» ! ÆD gfâ(S!ËiLl5(@Î.rl}3(Q)lfSDÊi 1 Megabit (64K x 16, Chip Erase) FLASH MEMORY • FAST ACCESS TIME: 90ns - LOW POWER CONSUMPTION - Standby Current: 100jiA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE


    OCR Scan     		PDF M28F102 100jiA PLCC44 TSOP40 M28F102 TSOP40 7t12I1237 A1006

    m5m28f102j

    Abstract: No abstract text available
    Text: PRELIMINARY M5 M28F102P,FP,J,VP,RV-10,S-U12S-i 5S'S 1048576-BIT 65536-WORD B Y 16-BIT C M O S F L A S H M EM Q R V DESCRIPTION PIN CONFIGURATION (TOP VIEW The M itsubishi M 5 M 2 8 F 1 0 2 P ,F P J,V P JIV are high-speed


    OCR Scan     		PDF M28F102P RV-10 12S-i 1048576-BIT 65536-WORD 16-BIT 44pin ------1202CW------ m5m28f102j

    a14ct

    Abstract: 28f102 M28F102 A10CZ
    Text: SGS-THOMSON M28F102 1 Mb 64K x 16, Bulk Erase FLASH MEMORY DATA B RIEFING • ■ ■ • ■ « • ■ ■ ■ 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 100ns BYTE PROGRAMMING TIME: 10^s typical ELECTRICAL CHIP ERASE In 1s RANGE


    OCR Scan     		PDF M28F102 100ns 0020h 0050h PLCC44 M28F102 PLCC44 A10CZ A12CZ A13CZ a14ct 28f102

    Untitled

    Abstract: No abstract text available
    Text: /= # ^7# S G S -T H O M S O N ^□ ^®iLi©lT[E©K50 gi M28F102 CMOS 1 Megabit (64K x 16, Chip Erase FLASH MEMORY ADVANCE DATA • FAST ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION - Standby Current: 100liA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE


    OCR Scan     		PDF M28F102 100ns 100liA M28F102 PDIP40 PLCC44

    Untitled

    Abstract: No abstract text available
    Text: SEE ]> • ? q g q g 37 00377^ S C S -T H O M S O N I1WMDÊI fl5 b ■ S G T H s r s - thohson M28F102 CMOS 1 Megabit 64K x 16 FLASH MEMORY ADVANCE DATA FAST ACCESS TIME: 100ns LOW POWER CONSUMPTION - Standby Current: 100uA Max 10,000 ERASE/PROGRAM CYCLES


    OCR Scan     		PDF M28F102 100ns 100uA M28F102 M28F102----- PDIP40 PLCC44

    Untitled

    Abstract: No abstract text available
    Text: M28F102 1 Mbit 64Kb x16, Bulk Erase Flash Memory • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMMING TIME: 10jjs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION


    OCR Scan     		PDF M28F102 10jjs 0020h 0050h PLCC44 TSOP40 M28F102

    1N914

    Abstract: M28F102 PDIP40 PLCC44
    Text: SGS-THOMSON *7 Æ * M28F102 [M ]D g ^ (Q E [L E ¥^ (Q )R O D © ï CMOS 1 Megabit (64K x 16) FLASH MEMORY ADVANCE DATA • FAST ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION - Standby Current: 10O^A Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE


    OCR Scan     		PDF M28F102 100ns PDIP40 PLCC44 M28F102 PDIP40 PLCC44 1N914

    Untitled

    Abstract: No abstract text available
    Text: /= 7 ^7 # « S G S -T H O M S O N 5iD i@iLi©T Q MD(gi M28F102 CMOS 1 Megabit (64K x 16) FLASH MEMORY ADVANCE DATA • FAST ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION - Standby Current: 100(iA Max ■\ ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE


    OCR Scan     		PDF M28F102 100ns PDIP40 PLCC44 M28F102 PDIP40

    Untitled

    Abstract: No abstract text available
    Text: M29F102BB 1 Mbit 64Kb x16, Boot Block Single Supply Flash Memory PRELIMINARY DATA • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 35ns ■ FAST PROGRAMMING TIME: 8^s typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.) - Program Word-by-Word


    OCR Scan     		PDF M29F102BB M28F102