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    M28F201 Price and Stock

    STMicroelectronics M28F201-120K1

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    Bristol Electronics M28F201-120K1 188
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    Quest Components M28F201-120K1 1,280
    • 1 $11.64
    • 10 $11.64
    • 100 $11.64
    • 1000 $5.82
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    M28F201-120K1 818
    • 1 $11.64
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    • 1000 $4.074
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    M28F201-120K1 153
    • 1 $11.64
    • 10 $11.64
    • 100 $7.178
    • 1000 $6.402
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    M28F201-120K1 150
    • 1 $11.64
    • 10 $11.64
    • 100 $7.178
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    M28F201-120K1 25
    • 1 $11.64
    • 10 $7.76
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    SGS Thomson M28F201-120K1

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    Bristol Electronics M28F201-120K1 96
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    STMicroelectronics M28F201-150K1

    IC,EEPROM,NOR FLASH,256KX8,CMOS,LDCC,32PIN,PLASTIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components M28F201-150K1 54
    • 1 $10.5
    • 10 $5.25
    • 100 $4.55
    • 1000 $4.55
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    STMicroelectronics M28F201-70K1

    INSTOCK
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    Chip 1 Exchange M28F201-70K1 34
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    Others M28F201-70K1

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    Chip 1 Exchange M28F201-70K1 5
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    M28F201 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    M28F201 STMicroelectronics 2 Mb 256K x 8, Chip Erase FLASH MEMORY Original PDF
    M28F201-100K1 STMicroelectronics CMOS 2 Megabit (256K x 8) Flash Memory Scan PDF
    M28F201-100K6 STMicroelectronics CMOS 2 Megabit (256K x 8) Flash Memory Scan PDF
    M28F201-100N1 STMicroelectronics CMOS 2 Megabit (256K x 8) Flash Memory Scan PDF
    M28F201-100N1R STMicroelectronics CMOS 2 Megabit (256K x 8) Flash Memory Scan PDF
    M28F201-100N6 STMicroelectronics CMOS 2 Megabit (256K x 8) Flash Memory Scan PDF
    M28F201-100N6R STMicroelectronics CMOS 2 Megabit (256K x 8) Flash Memory Scan PDF
    M28F201-100P1 STMicroelectronics CMOS 2 Megabit (256K x 8) Flash Memory Scan PDF
    M28F201-100P6 STMicroelectronics CMOS 2 Megabit (256K x 8) Flash Memory Scan PDF
    M28F201-120K1 STMicroelectronics Memory configuration 256K x 8 Memory type Flash Memory size 2 M-bit 2Mb (256K8) FLASH memory - 120ns Access (PLCC) Original PDF
    M28F201-120K1 STMicroelectronics 2 Megabit (256K x 8, Chip Erase) FLASH MEMORY Scan PDF
    M28F201-120K1R STMicroelectronics 2 Mb 256K x 8, Chip Erase FLASH MEMORY Original PDF
    M28F201-120K1R STMicroelectronics 2 Megabit (256K x 8, Chip Erase) FLASH MEMORY Scan PDF
    M28F201-120K1TR STMicroelectronics 2 Mb 256K x 8, Chip Erase FLASH MEMORY Original PDF
    M28F201-120K1TR STMicroelectronics 2 Megabit (256K x 8, Chip Erase) FLASH MEMORY Scan PDF
    M28F201-120K3 STMicroelectronics 2 Megabit (256K x 8, Chip Erase) FLASH MEMORY Scan PDF
    M28F201-120K3R STMicroelectronics 2 Mb 256K x 8, Chip Erase FLASH MEMORY Original PDF
    M28F201-120K3R STMicroelectronics 2 Megabit (256K x 8, Chip Erase) FLASH MEMORY Scan PDF
    M28F201-120K3TR STMicroelectronics 2 Mb 256K x 8, Chip Erase FLASH MEMORY Original PDF
    M28F201-120K3TR STMicroelectronics 2 Megabit (256K x 8, Chip Erase) FLASH MEMORY Scan PDF
    ...

    M28F201 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    M28F201

    Abstract: PLCC32 TSOP32
    Text: M28F201 2 Mbit 256Kb x8, Bulk Erase Flash Memory 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Active Current: 15mA typical – Stand-by Current: 5µA typical


    Original     		M28F201 256Kb M28F201 PLCC32 TSOP32 PDF

    M28F201

    Abstract: AN1253 AN1193 M29F002B M29F002BB M29F002BT PLCC32 TSOP32
    Text: AN1253 APPLICATION NOTE Replacing the M28F201 with the M29F002B Flash Memory CONTENTS • INTRODUCTION ■ HARDWARE COMPATIBILITY ■ SOFTWARE UPGRADE ■ OTHER CONSIDERATIONS ■ CONCLUSION INTRODUCTION This application note will help you to replace the M28F201 in


    Original     		AN1253 M28F201 M29F002B M29F002B. M28F201: M29F002BB M29F002BT AN1253 AN1193 M29F002BT PLCC32 TSOP32 PDF

    1N914

    Abstract: M28F201 PLCC32 TSOP32
    Text: M28F201 2 Megabit 256K x 8, Chip Erase FLASH MEMORY PRELIMINARY DATA FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Active Current: 15mA Typ. – Standby Current: 10µA Typ. 10,000 PROGRAM/ERASE CYCLES 12V PROGRAMMING VOLTAGE 5V ± 10% SUPPLY VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs


    Original     		M28F201 M28F201 1N914 PLCC32 TSOP32 PDF

    M28F201

    Abstract: TSOP32 Package PLCC32 TSOP32
    Text: M28F201 REVISION HISTORY - cont’d Date Description Stand-by Current from 10uA typ. to 5uA typ. November ’97 AC Test Circuit and Waveforms - modified PLCC mechanical data and diagram - modified TSOP mechanical data - modified August ’98 New ST Logo and Disclaimer - added


    Original     		M28F201 256Kb PLCC32 TSOP32 AI00639C AI00640D M28F201 TSOP32 Package PLCC32 TSOP32 PDF

    plcc32 pinout

    Abstract: M28F201 PDIP32 PLCC32 TSOP32
    Text: M28F201 M28V201 2 Megabit 256K x 8, Chip Erase FLASH MEMORY PRODUCT PREVIEW FAST ACCESS TIMES – 60ns for M28F201 version – 150ns for M28V201 version LOW POWER CONSUMPTION – Standby Current: 100µA Max 32 10,000 PROGRAM/ERASE CYCLES 12V PROGRAMMING VOLTAGE


    Original     		M28F201 M28V201 M28F201 150ns M28V201 PLCC32 PDIP32 TSOP32 plcc32 pinout PDIP32 PLCC32 TSOP32 PDF

    M28F201

    Abstract: No abstract text available
    Text: M28F201 2 Megabit 256K x 8, Chip Erase FLASH MEMORY PRELIMINARY DATA FAST ACCESS TIME: 70ns LOW POWER CONSUMPTION – Active Current: 15mA Typ. – Standby Current: 10µA Typ. 10,000 PROGRAM/ERASE CYCLES 12V PROGRAMMING VOLTAGE 5V ± 10% SUPPLY VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs


    Original     		M28F201 M28F201 PDF

    M28F201

    Abstract: M29F002BB AN1193 AN1253 M29F002B M29F002BT PLCC32 TSOP32
    Text: AN1253 APPLICATION NOTE Replacing the M28F201 with the M29F002B Flash Memory CONTENTS • INTRODUCTION ■ HARDWARE COMPATIBILITY ■ SOFTWARE UPGRADE ■ OTHER CONSIDERATIONS ■ CONCLUSION INTRODUCTION This application note will help you to replace the M28F201 in


    Original     		AN1253 M28F201 M29F002B M29F002B. M28F201: M29F002BB M29F002BT AN1193 AN1253 M29F002BT PLCC32 TSOP32 PDF

    1N914

    Abstract: M28F201 PLCC32 TSOP32
    Text: M28F201 2 Mb 256K x 8, Chip Erase FLASH MEMORY 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Active Current: 15mA typical – Stand-by Current: 10µA typical


    Original     		M28F201 M28F201 1N914 PLCC32 TSOP32 PDF

    M28F201

    Abstract: No abstract text available
    Text: M28F201 2 Megabit 256K x 8, Chip Erase FLASH MEMORY DATA BRIEFING FAST ACCESS TIME: 70ns LOW POWER CONSUMPTION – Active Current: 15mA Typ. – Standby Current: 10µA Typ. 10,000 PROGRAM/ERASE CYCLES 12V PROGRAMMING VOLTAGE 5V ± 10% SUPPLY VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs


    Original     		M28F201 M28F201 120ns 150ns AI00638C PLCC32 TSOP32 PDF

    M28F201

    Abstract: PLCC32 TSOP32
    Text: M28F201 2 Mb 256K x 8, Bulk Erase FLASH MEMORY DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Active Current: 15mA typical


    Original     		M28F201 M28F201 PLCC32 TSOP32 AI00639C AI00640D PLCC32 TSOP32 PDF

    plcc32 pinout

    Abstract: M28F201 PLCC32 TSOP32
    Text: M28F201 2 Mb 256K x 8, Chip Erase FLASH MEMORY 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Active Current: 15mA typical – Stand-by Current: 10µA typical


    Original     		M28F201 M28F201 plcc32 pinout PLCC32 TSOP32 PDF

    Untitled

    Abstract: No abstract text available
    Text: £yj SGS-THOMSON DWIllLI DW!lll©i M28F201 2 Mb 256K x 8, Chip Erase FLASH MEMORY • 5V ± 10% SUPPLY VOLTAGE ■ 12V PROGRAMMING VOLTAGE ■ ■ ■ ■ FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 1Ojas typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION


    OCR Scan     		M28F201 PLCC32 TSOP32 M28F201 TSOP32 PDF

    Untitled

    Abstract: No abstract text available
    Text: 5 7 . S G S -1 H 0 M S 0 N M28F201 M g [ M l[ L I( ^ [ il( g § 2 Megabit (256K x 8, Chip Erase FLASH MEMORY PRELIMINARY DATA • FAST ACCESS TIME: 90ns ■ LOW POWER CONSUMPTION - Active Current: 15mATyp. - Standby Current: 10pATyp. ■ 10,000 PROGRAM/ERASE CYCLES


    OCR Scan     		M28F201 15mATyp. 10pATyp. TSOP32 M28F201 PDF

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON IIIIMJì ILIì M W IIÈÌ M28F201 2 Megabit 256K x 8, Chip Erase FLASH MEMORY PRELIMINARY DATA FAST ACCESS TIME: 70ns LOW POWER CONSUMPTION - Active Current: 15mATyp. - Standby Current: 10|jA Typ. 10,000 PROGRAM/ERASE CYCLES 12V PROGRAMMING VOLTAGE


    OCR Scan     		M28F201 15mATyp. PLCC32 TSOP32 M28F201 TSOP32 PDF

    1N914

    Abstract: M28F201 PDIP32 PLCC32 VA00644
    Text: 5 7 , SGS-THOMSON M28F201 CMOS 2 Megabit 256K x 8 FLASH MEMORY ADVANCE DATA FAST ACC ESS TIM E: 100ns LOW POWER CONSUMPTION - Standby Current: 10O^A Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMM ING VOLTAGE TYPICAL BYTE PROGRAMM ING TIME 10(is (PRESTO F ALGORITHM)


    OCR Scan     		M28F201 100ns M28F201 PDIP32 PLCC32 PTS032 1N914 VA00644 PDF

    Untitled

    Abstract: No abstract text available
    Text: Æ 7 SCS-THOMSON ^ 7 # M28F201 [iD ê œ iL K g ^ O iQ ig i CMOS 2 Megabit 256K x 8 FLASH MEMORY ADVANCE DATA • FAST ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION - Standby Current: 100p.A Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE


    OCR Scan     		M28F201 100ns M28F201 PDIP32 PLCC32 PTS032 PDF

    ED07

    Abstract: M28F201
    Text: M28F201A M28V201A S C S -T H O M S O N KÆ0 g^(Ô iLi(g^(ô)10(gi CMOS 2 Megabit (256K x 8, Chip Erase) FLASH MEMORY PRODUCT CONCEPT • MEMORY CHIP ERASE ■ SUPPLY VOLTAGE in READ OPERATION - 5V ± 10% for M28F201A version - 3.3V ± 0.3V for M28V201A version


    OCR Scan     		M28F201A M28V201A M28V201A 150ns M28F201 ED07 PDF

    M28F201

    Abstract: PDIP32 TSOP32
    Text: M28F201 M28V201 SGS-THOMSON G l R fflQ [E Ì [ÌL I £ M © 5 ìfl3 © Ì> 2 Megabit (256K x 8, Chip Erase FLASH M EM ORY PRODUCT PREVIEW FAST ACCESS TIMES - 60ns for M28F201 version - 150ns for M28V201 version LOW POWER CONSUMPTION - Standby Current: 10OnA Max


    OCR Scan     		M28F201 M28V201 150ns M28V201 10OnA M28F201, PDIP32 TSOP32 PDF

    Untitled

    Abstract: No abstract text available
    Text: $ 7 . M28F201 M28V201 SGS-THOMSON B !ü lD lS [ilL li© ir® S lü O !l® l 2 Megabit 256K x 8, Chip Erase FLASH MEMORY PRODUCT PREVIEW • FAST ACCESS TIMES - 60ns for M28F201 version - 150ns for M28V201 version ■ LOW POWER CONSUMPTION - Standby Current: 100nA Max


    OCR Scan     		M28F201 M28V201 M28F201 150ns M28V201 100nA PDIP32 TSOP32 PDF

    Untitled

    Abstract: No abstract text available
    Text: S G S -T H O M S O N D iILi 'irM D EÌ M28F201 2 Mb (256K x 8, Bulk Erase FLASH MEMORY • > ■ ■ > ■ ■ ■ ■ ■ 5 V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10|is typical ELECTRICAL CHIP ERASE in 1s RANGE


    OCR Scan     		M28F201 15mAtypical PLCC32 TSOP32 M28F201 TSOP32 PDF

    ha14

    Abstract: M28F201
    Text: M28F201 M28V201 C 7 S G S -1H 0M S 0N ^ 7 t * nwiniSMUfiUEìTMBiinisg CMOS 2 Megabit 256K x 8, Chip Erase FLASH MEMORY ABBREVIATED DATA FAST ACCESS TIMES - 60ns for M28F201 version - 150ns for M28V201 version LOW POWER CONSUMPTION - Standby Current: 100|xAMax


    OCR Scan     		M28F201 M28V201 150ns M28V201 M20F201 M20V201 M28F201, ha14 PDF

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON D iILi 'irM D EÌ M28F201 2 Mb (256K x 8, Chip Erase FLASH MEMORY • ■ ■ > > > ■ ■ ■ ■ 5 V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10^s typical ELECTRICAL CHIP ERASE in 1s RANGE


    OCR Scan     		M28F201 15mAtypical 10jaA PLCC32 TSOP32 M28F201 TSOP32 PDF

    2A153

    Abstract: cj cl a17
    Text: ^ jw * SCS-THOMSON M 28F201A M 28V201A iMH g[si(ô [gfug(gir[si(cj)iin(Sg CMOS 2 Megabit (256K x 8, Chip Erase) FLASH MEMORY ABBREVIATED DATA • MEMORY CHIP ERASE ■ SUPPLY VOLTAGE in READ OPERATION - 5V ± 10% for M28F201A version - 3.3V ± 0.3V for M28V201A version


    OCR Scan     		28F201A 28V201A M28F201A M28V201A M28V201A 30jiA 150ns 2A153 cj cl a17 PDF

    A13E

    Abstract: 28F201 5 pin A13E M28F201
    Text: SGS-1H0MS0N M28F201 m 2 Mb 256K x 8, Bulk Erase FLASH MEMORY DATA BRIEFING • ■ ■ ■ 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10ns typical ■ ELECTRICAL CHIP ERASE in 1s RANGE ■ LOW POWER CONSUMPTION


    OCR Scan     		M28F201 PLCC32 TSOP32 M28F201 28F201 006MLi A13E 28F201 5 pin A13E PDF