Untitled
Abstract: No abstract text available
Text: 28F256A 256K 32K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 fis Typical Byte-Program — 0.5 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp
|
OCR Scan
|
PDF
|
28F256A
2bl75
|
Untitled
Abstract: No abstract text available
Text: ir v tJ . 28F256A 256K 32K x 8 CMOS FLASH MEMORY • Flash Electrical Chlp-Erase — 1 Second Typical Chip-Erase ■ Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface ■ Quick-Pulse Programming Algorithm — 10 /j.8 Typical Byte-Program
|
OCR Scan
|
PDF
|
28F256A
Cu56A-150
150f1*
F256A-120
F256A-150
ER-20,
ER-24,
RR-60,
AP-316,
AP-325,
|
2SF256
Abstract: M28F256A
Text: rz7 SCS-THOMSON M28F256A CMOS 256K 32K x 8 FLASH MEMORY * FAST ACCESS TIME: 100ns • LOW POWER CONSUMPTION - Standby Current: 200|iA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMING TIME 10jas (PRESTO F ALGORITHM)
|
OCR Scan
|
PDF
|
M28F256A
100ns
10jas
M28F256A
PDIP32
PLCC32
2SF256
|
Untitled
Abstract: No abstract text available
Text: irrte1 A28F256A 256K 32K x 8 CMOS FLASH MEMORY Automotive Extended Automotive Temperature Range -40°C to + 125°C Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 )x8 Typical Byte-Program — 0.5 Second Chip-Program
|
OCR Scan
|
PDF
|
A28F256A
AP28F256A-120
AP28F256A-150
AN28F256A-150
AP-316,
28F256A
ER-21,
28F256
RR-60,
|