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    POWER BOND Search Results

    POWER BOND Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    POWER BOND Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MIL-STD-1686

    Abstract: AlGaAs resistivity LP1500 MIL-HDBK-263 P100
    Text: LP1500 1W POWER PHEMT • • FEATURES ♦ 31.5 dBm Output Power at 1-dB Compression at 18 GHz ♦ 8 dB Power Gain at 18 GHz ♦ 28 dBm Output Power at 1-dB Compression at 3.3V ♦ 45dBm Output IP3 at 18GHz ♦ 50% Power-Added Efficiency DRAIN BOND PAD 2X


    Original     		PDF LP1500 45dBm 18GHz 420x410 50x60 LP1500 MIL-STD-1686 AlGaAs resistivity MIL-HDBK-263 P100

    LP3000

    Abstract: MIL-HDBK-263 P100
    Text: LP3000 2 W POWER PHEMT • • DRAIN BOND PAD 4X FEATURES ♦ 33.5 dBm Output Power at 1-dB Compression at 18 GHz ♦ 7 dB Power Gain at 18 GHz ♦ 30.5 dBm Output Power at 1-dB Compression at 3.3V ♦ 45% Power-Added Efficiency SOURCE BOND PAD (2x) GATE


    Original     		PDF LP3000 720x420 50x60 LP3000 MIL-HDBK-263 P100

    LP750

    Abstract: MIL-HDBK-263 P100 320x430
    Text: LP750 0.5 W POWER PHEMT • • FEATURES ♦ 28 dBm Output Power at 1-dB Compression at 18 GHz ♦ 10 dB Power Gain at 18 GHz ♦ 24 dBm Output Power at 1-dB Compression at 3.3V ♦ 55% Power-Added Efficiency DRAIN BOND PAD SOURCE BOND PAD 2x GATE BOND PAD


    Original     		PDF LP750 320x430 85x60 LP750 MIL-HDBK-263 P100 320x430

    LP750

    Abstract: MIL-HDBK-263 P100
    Text: LP750 0.5 W POWER PHEMT • • FEATURES ♦ 28 dBm Output Power at 1-dB Compression at 18 GHz ♦ 10 dB Power Gain at 18 GHz ♦ 24 dBm Output Power at 1-dB Compression at 3.3V ♦ 55% Power-Added Efficiency DRAIN BOND PAD SOURCE BOND PAD 2x GATE BOND PAD


    Original     		PDF LP750 420x410 85x60 LP750 MIL-HDBK-263 P100

    pHEMT transistor 360

    Abstract: FPA683
    Text: LPA6836V Preliminary Data Sheet MEDIUM POWER PHEMT WITH SOURCE VIAS • DRAIN BOND PAD FEATURES ♦ 25 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 55% Power-Added Efficiency ♦ Source Vias to Backside Metallization GATE


    Original     		PDF LPA6836V 390x360 75x75 FPA6836V resistance18 pHEMT transistor 360 FPA683

    pHEMT transistor 360

    Abstract: LP6836 MIL-HDBK-263
    Text: Filtronic LP6836 Medium Power PHEMT Solid State DRAIN BOND PAD FEATURES • • • • +25 dBm Typical Power at 18 GHz 9.5 dB Typical Power Gain at 18 GHz Low Intermodulation Distortion 55% Power-Added-Efficiency at 18 GHz SOURCE BOND PAD x2 GATE BOND PAD


    Original     		PDF LP6836 LP6836 DSS-029 pHEMT transistor 360 MIL-HDBK-263

    Untitled

    Abstract: No abstract text available
    Text: Model PWA and PWB Thin Film Wire-Bondable Power Resistors FEATURES • Small Size: 0.030 x 0.045 inches PWA 0.070 x 0.070 inches (PWB) • Excellent Power Capability: 0.5 watts (PWA) 1.0 watts (PWB) • Good Power Handling: 100% rated power to + 70 ºC derated to


    Original     		PDF ran50ppm 500mW MIL-STD-883. 23-Feb-04

    Untitled

    Abstract: No abstract text available
    Text: RESISTORS Models PWA and PWB Thin Film Wire Bondable Power Resistors FEATURES • Small Size: 0.030 x 0.045 inches PWA 0.070 x 0.070 inches (PWB) • Excellent Power Capability: 0.5 watts (PWA) 1.0 watts (PWB) • Good Power Handling: 100% rated power to + 70ºC derated to


    Original     		PDF

    LP6872

    Abstract: MIL-HDBK-263
    Text: LP6872 0.5W POWER PHEMT • DRAIN BOND PAD 2X FEATURES ♦ 27 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 55% Power-Added Efficiency SOURCE BOND PAD (2x) GATE BOND PAD (2X) • DIE SIZE: 14.6X19.7 mils (370x500 µm)


    Original     		PDF LP6872 370x500 50x60 LP6872 MIL-HDBK-263

    BY360

    Abstract: No abstract text available
    Text: LPA6836V MEDIUM POWER PHEMT WITH SOURCE VIAS • DRAIN BOND PAD FEATURES ♦ 25 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 55% Power-Added Efficiency ♦ Source Vias to Backside Metallization GATE BOND PAD • DIE SIZE: 15.4X14.2 mils 390x360 µm


    Original     		PDF LPA6836V 390x360 75x75 LPA6836V BY360

    noise parameter FPD750 0.5w power phemt

    Abstract: FPD750 MIL-HDBK-263 P100
    Text: FPD750 0.5W POWER PHEMT • • DRAIN BOND PAD 2X FEATURES ♦ 27 dBm Linear Output Power at 12 GHz ♦ 11.5 dB Power Gain at 12 GHz ♦ 14.5 dB Maximum Stable Gain at 12 GHz ♦ 38 dBm Output IP3 ♦ 50% Power-Added Efficiency SOURCE BOND PAD (2x) GATE


    Original     		PDF FPD750 FPD750 noise parameter FPD750 0.5w power phemt MIL-HDBK-263 P100

    Untitled

    Abstract: No abstract text available
    Text: FPD750 0.5W POWER PHEMT • • DRAIN BOND PAD 2X FEATURES ♦ 27 dBm Linear Output Power at 12 GHz ♦ 11.5 dB Power Gain at 12 GHz ♦ 14.5 dB Maximum Stable Gain at 12 GHz ♦ 38 dBm Output IP3 ♦ 50% Power-Added Efficiency SOURCE BOND PAD (2x) GATE


    Original     		PDF FPD750 FPD750

    FPD1500

    Abstract: MIL-HDBK-263 P100
    Text: FPD1500 1W POWER PHEMT • • DRAIN BOND PAD 2X FEATURES ♦ 29 dBm Linear Output Power at 12 GHz ♦ 9 dB Power Gain at 12 GHz ♦ 12.5 dB Maximum Stable Gain at 12 GHz ♦ 41 dBm Output IP3 ♦ 35% Power-Added Efficiency SOURCE BOND PAD (2x) GATE BOND


    Original     		PDF FPD1500 FPD1500 MIL-HDBK-263 P100

    FPD1050

    Abstract: FPD750 MIL-HDBK-263
    Text: FPD1050 0.75W POWER PHEMT • • FEATURES ♦ 28.5 dBm Linear Output Power at 12 GHz ♦ 11 dB Power Gain at 12 GHz ♦ 14 dB Maximum Stable Gain at 12 GHz ♦ 41 dBm Output IP3 ♦ 45% Power-Added Efficiency SOURCE BOND PAD 2x DRAIN BOND PAD (2X) GATE


    Original     		PDF FPD1050 FPD1050 reliablL-STD-1686 MIL-HDBK-263. FPD750 MIL-HDBK-263

    Curtice

    Abstract: LP3000 MIL-HDBK-263 P100
    Text: Filtronic LP3000/LPV3000 2W Power PHEMT Solid State DRAIN PAD x4 FEATURES • • • • • +33.5 dBm Typical Power at 18 GHz 7 dB Typical Power Gain at 18 GHz SOURCE BOND PAD (x2) +30.5 dBm at 3.3V Battery Voltage Low Intermodulation Distortion 45% Power-Added-Efficiency at 18 GHz


    Original     		PDF LP3000/LPV3000 LP3000 DSS-027 Curtice MIL-HDBK-263 P100

    FPD1500

    Abstract: stepper FPD1500 SOT89 MIL-HDBK-263 P100
    Text: FPD1500 1W POWER PHEMT • • DRAIN BOND PAD 2X FEATURES ♦ 29 dBm Linear Output Power at 12 GHz ♦ 9 dB Power Gain at 12 GHz ♦ 12.5 dB Maximum Stable Gain at 12 GHz ♦ 41 dBm Output IP3 ♦ 35% Power-Added Efficiency SOURCE BOND PAD (2x) GATE BOND


    Original     		PDF FPD1500 FPD1500 stepper FPD1500 SOT89 MIL-HDBK-263 P100

    FPD3000

    Abstract: MIL-HDBK-263 P100 Au Sn eutectic
    Text: FPD3000 2W POWER PHEMT • FEATURES ♦ 32.5 dBm Linear Output Power at 12 GHz ♦ 6.5 dB Power Gain at 12 GHz ♦ 8 dB Maximum Stable Gain at 12 GHz ♦ 42 dBm Output IP3 ♦ 30% Power-Added Efficiency DRAIN BOND PAD 4X SOURCE BOND PAD (2x) GATE BOND PAD (4X)


    Original     		PDF FPD3000 FPD3000 MIL-HDBK-263 P100 Au Sn eutectic

    MIL-STD-1686

    Abstract: LP6836 MIL-HDBK-263 pHEMT transistor LP6836 high power transistor s-parameters
    Text: LP6836 MEDIUM POWER PHEMT • DRAIN BOND PAD FEATURES ♦ 25 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 55% Power-Added Efficiency SOURCE BOND PAD 2x GATE BOND PAD • DIE SIZE: 14.2X13.0 mils (360x330 µm) DIE THICKNESS: 3.9 mils (100 µm)


    Original     		PDF LP6836 360x330 50x50 LP6836 MIL-STD-1686 MIL-HDBK-263 pHEMT transistor LP6836 high power transistor s-parameters

    Low Capacitance MOS FET

    Abstract: Pch MOS FET HAT2068R HAT2096H Low Input Capacitance MOS FET Hitachi DSA0015 f200k
    Text: New Products Hitachi Develops LFPAK Thin Power MOS FET Package Employing Bonding-Wire-Less Construction and Enabling 20% Reduction in On-Resistance < Typical Applications > • CPU power supplies in notebook PCs, etc. • Power supplies for communication devices


    Original     		PDF HAT2096H, HAT2096H HAT2096H Low Capacitance MOS FET Pch MOS FET HAT2068R Low Input Capacitance MOS FET Hitachi DSA0015 f200k

    FPD2250

    Abstract: MIL-HDBK-263 P100
    Text: FPD2250 1.5W POWER PHEMT • DRAIN BOND PAD 2X FEATURES ♦ 32 dBm Linear Output Power at 12 GHz ♦ 7.5 dB Power Gain at 12 GHz ♦ 42 dBm Output IP3 ♦ 45% Power-Added Efficiency SOURCE BOND PAD (2x) GATE BOND PAD (2X) • DIE SIZE (µm): 680 x 470 DIE THICKNESS: 75 µm


    Original     		PDF FPD2250 FPD2250 MIL-HDBK-263 P100

    vacuum cleaner motor

    Abstract: BTA412Y-800B BTA416Y-600B BTA41 electronic dimmer vacuum cleaner motor BC557 BTA312Y-600C BTA312Y-800C BTA412Y-600B BTA412Y-600C
    Text: NXP internally insulated power package SOT78D Rugged performer for high power applications For high power devices requiring electrical isolation with good thermal performance, ease of handling and assembly, NXP’s SOT78D package is the perfect choice. Our optimized die-bonding


    Original     		PDF OT78D OT78D O220AB OT186A BTA312Y-600C BTA312Y-800C BTA412Y-600B vacuum cleaner motor BTA412Y-800B BTA416Y-600B BTA41 electronic dimmer vacuum cleaner motor BC557 BTA312Y-600C BTA312Y-800C BTA412Y-600B BTA412Y-600C

    MP312

    Abstract: MP330 power resistor encapsulated DMO10 MIL-R-39009-1 MIL-R-39009/1 MIL-R-39009
    Text: MP312 and MP330 Power Film Resistors Chassis Mounted Precision Power Film Resistors with Center Screw Mounting Type MP Chassis Mounted Power Film Resistors are made with Micronox resistance films fired onto a ceramic substrate which is thermally bonded to an


    Original     		PDF MP312 MP330 MP312 IL-123 power resistor encapsulated DMO10 MIL-R-39009-1 MIL-R-39009/1 MIL-R-39009

    MP330

    Abstract: MP312
    Text: MP312 and MP330 Power Film Resistors Chassis Mounted Precision Power Film Resistors with Center Screw Mounting Type MP Chassis Mounted Power Film Resistors are made with Micronox resistance films fired onto a ceramic substrate which is thermally bonded to an


    Original     		PDF MP312 MP330 Mil-Std-202, IL123

    Untitled

    Abstract: No abstract text available
    Text: MP312 and MP330 Power Film Resistors Chassis Mounted Precision Power Film Resistors with Center Screw Mounting Type MP Chassis Mounted Power Film Resistors are made with Micronox resistance films fired onto a ceramic substrate which is thermally bonded to an


    OCR Scan     		PDF MP312 MP330 IL-123