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Catalog Datasheet	MFG & Type	PDF	Document Tags
pHEMT transistor 360 Abstract: FPA683 Text: LPA6836V Preliminary Data Sheet MEDIUM POWER PHEMT WITH SOURCE VIAS • DRAIN BOND PAD FEATURES ♦ 25 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 55% Power-Added Efficiency ♦ Source Vias to Backside Metallization GATE	Original	PDF	LPA6836V 390x360 75x75 FPA6836V resistance18 pHEMT transistor 360 FPA683

Catalog Datasheet

MFG & Type

PDF

Document Tags

pHEMT transistor 360

Abstract: FPA683
Text: LPA6836V Preliminary Data Sheet MEDIUM POWER PHEMT WITH SOURCE VIAS • DRAIN BOND PAD FEATURES ♦ 25 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 55% Power-Added Efficiency ♦ Source Vias to Backside Metallization GATE

Original

PDF

LPA6836V 390x360 75x75 FPA6836V resistance18 pHEMT transistor 360 FPA683