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    PNP NPN TRANSISTOR VCEO 80V 100V IC 2A Search Results

    PNP NPN TRANSISTOR VCEO 80V 100V IC 2A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    PNP NPN TRANSISTOR VCEO 80V 100V IC 2A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original     		PDF 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN

    TIP117

    Abstract: TIP116 TIP115 TIP-115 NPN Transistor TO220 VCEO 80V 100V PNP NPN Transistor VCEO 80V 100V Ic 2A tip117 TRANSISTOR equivalent NPN Transistor VCEO 80V 100V DARLINGTON 2A 80v complementary transistor tip115 transistor
    Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP115/116/117 HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, IC= -1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-220 Complementary to TIP110/111/112


    Original     		PDF TIP115/116/117 O-220 TIP110/111/112 TIP116 TIP117 TIP115 -100V, TIP117 TIP116 TIP115 TIP-115 NPN Transistor TO220 VCEO 80V 100V PNP NPN Transistor VCEO 80V 100V Ic 2A tip117 TRANSISTOR equivalent NPN Transistor VCEO 80V 100V DARLINGTON 2A 80v complementary transistor tip115 transistor

    ZTX 15

    Abstract: load dump pulse automotive relay driver circuit using darlington ZTX704-705 5V to 240V relay ic ZTX752 replacement ZTX600 zetex transistors equivalent ztx649 zvn4206 application
    Text: Application Note 5 Issue 2 February 1996 Super E-Line Applications in Automotive Electronics Replacement of Large Packaged Transistors with an Enhanced TO92 Product David Bradbury Car buyers are now demanding greater and greater sophistication in their purchases, which along with extra safety


    Original     		PDF ZTX649-653 ZTX749-753 ZTX602 ZTX603 ZTX604 ZTX704 ZTX605 ZTX705 ZTX602-605 ZTX704-705 ZTX 15 load dump pulse automotive relay driver circuit using darlington 5V to 240V relay ic ZTX752 replacement ZTX600 zetex transistors equivalent ztx649 zvn4206 application

    QM5HL-24

    Abstract: 2sk2850 transistor qm5hl 2SK2850 transistor pnp 600v. 1a. to 92 QM5HL24 MG20G6EL1 600V PNP pnp transistor 600V NPN Transistor 600V
    Text: Next W M.T O .C Semiconductors00-YDiscretes W 1 M.T . O W C W WW .100Y. M.T O W .C ZTX~Series Transistors .TW W product Detailed Ware available on: us. 100y. com. tw W 00Y specifications 1 M.T . M O W O C . .C WW .1Pol00YIc max Part No. Product No. Manufacturer


    Original     		PDF 10silicon ZTX653 3P/TO-92 NPN00Y ZTX689B ZTX690B NPN100Y AT-31033-TR1 QM5HL-24 2sk2850 transistor qm5hl 2SK2850 transistor pnp 600v. 1a. to 92 QM5HL24 MG20G6EL1 600V PNP pnp transistor 600V NPN Transistor 600V

    MK1210

    Abstract: 4810 mosfet MA4000 Series MJ2400 MA1000 MA1000 Series MA2410 MA1010 MA3000 MA3000 Series
    Text: POWER ICs Stepping Motor Drivers ICs Outline The MTD series are monolithic power ICs that can be directly controlled through a CPU or a Gate Array with few external parts. Applications 1. Stepping motor drive for office equipment products. 2. Stepping motor drive for industrial robots, and automatic equipment.


    Original     		PDF ZIP-27 HSOP-28 MTD1110 1120F 5MTD1361 MTD2001 2003F 2005F 2006F 2007F MK1210 4810 mosfet MA4000 Series MJ2400 MA1000 MA1000 Series MA2410 MA1010 MA3000 MA3000 Series

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components TIP110/111/112   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • Silicon NPN TO-220 package The complementary PNP types are the TIP115/116/117 respectively


    Original     		PDF TIP110/111/112 O-220 TIP115/116/117 TIP110 TIP111 TIP112 O-220AB

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components TIP110/111/112   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • Silicon NPN The complementary PNP types are the TIP115/116/117 respectively


    Original     		PDF TIP110/111/112 TIP115/116/117 TIP110 TIP111 TIP112 O-220AB

    tip117 TRANSISTOR equivalent

    Abstract: No abstract text available
    Text: PNP EPITAXIAL TIP115/116/117 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, IC= -1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-220 • Complementary to TIP110/111/112


    Original     		PDF TIP115/116/117 O-220 TIP110/111/112 TIP115 TIP116 TIP117 -50oduct tip117 TRANSISTOR equivalent

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components TIP110/111/112   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • Silicon NPN The complementary PNP types are the TIP115/116/117 respectively


    Original     		PDF TIP110/111/112 TIP115/116/117 TIP110 TIP111 TIP112 O-220AB

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components TIP110/111/112   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • Halogen free available upon request by adding suffix "-HF"


    Original     		PDF TIP110/111/112 TIP115/116/117 TIP110 TIP111 TIP112

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components TIP110/111/112   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • Silicon NPN The complementary PNP types are the TIP115/116/117 respectively


    Original     		PDF TIP110/111/112 TIP115/116/117 TIP110 TIP111 TIP112

    FMMT634Q

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT634Q 100V NPN DARLINGTON TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. •  Features 


    Original     		PDF FMMT634Q 900mA 625mW FMMT734Q AEC-Q101 DS37051 FMMT634Q

    FMMT634Q

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT634 100V NPN DARLINGTON TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > 100V IC = 900mA high Continuous Collector Current ICM = 5A Peak Pulse Current


    Original     		PDF FMMT634 900mA 625mW FMMT734 AEC-Q101 DS33115 FMMT634Q

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT634 100V NPN DARLINGTON TRANSISTOR IN SOT23 Features Mechanical Data •           BVCEO > 100V IC = 900mA high Continuous Collector Current ICM = 5A Peak Pulse Current 625mW Power dissipation


    Original     		PDF FMMT634 900mA 625mW FMMT734 AEC-Q101 J-STD-020 DS33115

    je180

    Abstract: MJE181 MJE170 MJE172 MJE180 MJE182 MJE200 MJE210
    Text: SAMSUNG SEMICONDUCTOR INC MJE172 D | 7^4145 0007^3 4 | PNP EPITAXIAL SILICON TRANSISTOR T -3 3-1 7 LOW FREQUENCY AMPLIFIER LOW CURRENT, HIGH SPEED SWITCHING APPLICATION ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage j CoHector-Emitter Voltage


    OCR Scan     		PDF MJE172 -65M50 O-126 MJE170 MJE200 je180 MJE181 MJE180 MJE182 MJE210

    c106 TRANSISTOR

    Abstract: 800PF SDT6436 C10601 160V 30A TRANSISTOR SDT6438 c106
    Text: -Jfclitron 1?1M [d 1ü) T ©ÄTTÄIL® Devices. Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER PNP EPITAXIAL PLANAR POWER TRANSISTOR* * CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver'' also available)


    OCR Scan     		PDF 305mm) c106 TRANSISTOR 800PF SDT6436 C10601 160V 30A TRANSISTOR SDT6438 c106

    T1P110

    Abstract: transistor tip 107 T1P111 T1P105 darlington npn tip 102 np112 VCS-60V T1P115 L08M darlington tip 102
    Text: ¡ S A M S UN G S E M I C ON D U CT OR INC 14E D 1 7^1,4142 000772a fl PNP EPriAXIAT. SILICON DARLINGTON TRANSISTOR TIP105/106/107 r HIGH DC CURRENT GAIN ‘ MIN hFE=1000 @ V c e = —4 V, lc = -3 A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER


    OCR Scan     		PDF TIP105/106/107 000772a TIP100/101/102 TIP105 TIP106 TIP107 T1P105 TIP115: T1P110 transistor tip 107 T1P111 T1P105 darlington npn tip 102 np112 VCS-60V T1P115 L08M darlington tip 102

    transistor 13003 AD

    Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
    Text: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)


    OCR Scan     		PDF OT-23 KST06 KST05 KSC1623 BCW71 BCX70G BCX70H BCX70J BCX70K BCX71G transistor 13003 AD ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v

    C106V

    Abstract: c106 TRANSISTOR c08c C08-C
    Text: -Jfolitron Devices. Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER PNP EPITAXIAL PLANAR POWER TRANSISTOR * * CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold Polished silicon or "Chrome Nickel Silver" also available Also available on:


    OCR Scan     		PDF 305mm) SDT6436 SDT6438 C-106 C106V c106 TRANSISTOR c08c C08-C

    bd676a

    Abstract: BD678A
    Text: BD676A/678A/680A/682 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER DARLINGTON TR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD675A, BD677A, BD679A and BD681 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Rating Symbol Collector Base Voltage


    OCR Scan     		PDF BD676A/678A/680A/682 BD675A, BD677A, BD679A BD681 O-126 BD676A BD680A BD682 BD678A

    D880 voltage regulator

    Abstract: B0244C TIP28C transistor d880 VOLTAGE REGULATOR D880 D880 TRANSISTOR TIP28 A992 transistor E13009 ksd-180
    Text: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition Vet: (V) Ic (A) hpe Condition Vce(sat), VeE(sat)(v) Condition (V) (mA) MAX KST56(2G) KST55(2H) 80 0.5


    OCR Scan     		PDF OT-23 KST06 KST05 BCW71 BCX70G BCX70H BCX70J BCX70K BCX71 BCX71H D880 voltage regulator B0244C TIP28C transistor d880 VOLTAGE REGULATOR D880 D880 TRANSISTOR TIP28 A992 transistor E13009 ksd-180

    15J102

    Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
    Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811


    OCR Scan     		PDF 2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP115/116/117 HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, lc= -1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE C om plem entary to T IP 1 10/111/112


    OCR Scan     		PDF TIP115/116/117 TIP115 TIP117 TIP116

    triacs bt 804 600v

    Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
    Text: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa­ tion for maintaining an unusually high level of quality, perfor­


    OCR Scan     		PDF Comp27-1296 triacs bt 804 600v UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier