AAT3687
Abstract: AAT3687-1 AAT3687-2 80A output transistor overtemperature protection kia 830
Text: AAT3687 Lithium-Ion/Polymer Battery Charger General Description Features The AAT3687 BatteryManager is a highly integrated single-cell lithium-ion/polymer battery charger IC designed to operate with AC adapter inputs. It requires a minimum number of external components. The AAT3687 precisely regulates battery
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AAT3687
AAT3687
AAT3687-1
AAT3687-2
80A output transistor overtemperature protection
kia 830
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Untitled
Abstract: No abstract text available
Text: DATA SHEET AAT3687 Li-Ion/Polymer Battery Charger General Description Features The AAT3687 BatteryManager is a highly integrated single-cell lithium-ion/polymer battery charger IC designed to operate with AC adapter inputs. It requires a minimum number of external components. The AAT3687 precisely
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AAT3687
AAT3687
201890B
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AAT3687
Abstract: AAT3687-1 AAT3687-2 GRM219R60J106KE19 C398C lithium-ion charging circuit
Text: PRODUCT DATASHEET AAT3687 BatteryManagerTM Lithium-Ion/Polymer Battery Charger General Description Features The AAT3687 BatteryManager is a highly integrated single-cell lithium-ion/polymer battery charger IC designed to operate with AC adapter inputs. It requires a minimum number of external components. The AAT3687
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AAT3687
AAT3687
AAT3687-1
AAT3687-2
GRM219R60J106KE19
C398C
lithium-ion charging circuit
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201890B
Abstract: 6821-0-00-01-00-00-08-0
Text: DATA SHEET AAT3687 Li-Ion/Polymer Battery Charger General Description Features The AAT3687 BatteryManager is a highly integrated single-cell lithium-ion/polymer battery charger IC designed to operate with AC adapter inputs. It requires a minimum number of external components. The AAT3687 precisely
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AAT3687
AAT3687
201890B
201890B
6821-0-00-01-00-00-08-0
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LMG6912
Abstract: LMG5320XUFC LMG5278XUFC-00T LMG5278XUFC-00T backlight INVc218 evb vga LCD YGV610B Hitachi LCD Part Numbering invc191 YGV610
Text: Hitachi Europe Ltd ISSUE: APPS/62/1.0 APPLICATION NOTE DATE: 9/5/97 Interfacing the LCMEVB-001 to the H8/300H microcontroller Introduction The LCMEVB-001 is a low cost demonstration and evaluation tool for Hitachi medium resolution monochrome and colour LCDs. The following LCDs are supported:
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APPS/62/1
LCMEVB-001
H8/300H
LMG7520RPFC
LMG691x
SP14Q00x
LMG5320XUFC
LMG5278XUFC-00T
LMG7550XUFC
LMG6912
LMG5320XUFC
LMG5278XUFC-00T
LMG5278XUFC-00T backlight
INVc218
evb vga LCD
YGV610B
Hitachi LCD Part Numbering
invc191
YGV610
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MDD2606
Abstract: CC2500
Text: • MbfibEEb ODGlbT? 11? * I X Y PIXYS MDD26 Diode Modules iTAV = 2 x 36 A VnnM = 400-1800 V i > > 500 700 eoo 1300 1S00 1700 1900 VfWM V Type Version 1 B 400 600 800 1200 1400 1600 1800* MDD26-04N1 MDD26-06N1 MDD26-08N1 MDD26-12N1 MOD26-14N1 MDD26-16N1 MDD26-18N1
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MDD26
MDD26-04N1
MDD26-06N1
MDD26-08N1
MDD26-12N1
MOD26-14N1
MDD26-16N1
MDD26-18N1
MDD2606
CC2500
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B1116
Abstract: b1104 16N60 N60A B1118 10N120 B1102 B1126 24n60 35N120U1
Text: PIXYS SCSOAIGBTS-Series Contents IGBT •J v CES •> max < Tc = 25 °C V TO-220 IXSP TO-263 (IXSA) TO-247(IXSH) TO-2680XST) miniBLOC (IXSN) Page j? > > IXSA 16N60 IXSP 16N60 1.8 1.8 48 50 75 * 2.2 2.5 2.5 IXSH 24N60 IXSH 30N60 IXSH 40N60 B1-12 B1-20 B1-40
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O-220
O-263
O-247
O-2680XST)
16N60
24N60
30N60
40N60
25N100
B1116
b1104
N60A
B1118
10N120
B1102
B1126
35N120U1
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Untitled
Abstract: No abstract text available
Text: PIXYS 1 HiPerFAST IGBT V CES IXGH 24N60A ^C25 V v CE sat tfi 600 V 48 A 2.7 V 275 ns « Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR Td = 25 °C to 150°C; RQE = 1 M£2 600 V v GES Continuous ±20 V V GEM Transient ±30 V ^ C25 Tc = 25 °C
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24N60A
24N60A
24N60AU1
4bflb22b
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10N120AU1
Abstract: 10n120
Text: PIXYS IGBT with Diode IXSH 10N120AU1 U = 2 0 A VCES = 1200 V VCE sa„ = 4.0 V Short Circuit SOA Capability Symbol Test C onditions VCES V *C G R ^ = 25°C to 150°C T,J = 25°C to 150°C; FL.= 1 Mi2 C3E v v GEH Continuous T ransient ^C90 'c Tc = 25°C Tc = 90°C
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10N120AU1
-100/ps;
00A/MS
10N120AU1
10n120
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IXGQ100N50Y4
Abstract: No abstract text available
Text: I X Y S CORP IDE PIXYS .TM 4t.at.52ti ~ DATA SHEET NO. 41009B IXGQ100N50Y4 IGBT MODULE MAXIMUM RATINGS Tc = 25 °C unless otherwise Indicated Conditions Rating Value VCES 500 V g es ±20 V 100 DC, Tc = 85 °C lc lc 60 A A 1 mSec ICM 200 A Gate-Emitter Voltage (Continuous)
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D0D03Ã
41009B
IXGQ100N50Y4
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Untitled
Abstract: No abstract text available
Text: I X Y S CORP IflE D 4bflb22b GOOOfc.34 b PIXYS I X T E 14 N 40 X 4 MAXIMUM RATINGS PER DEVICE IXTE14N40X4 Sym. Drain-Gate Voltage (Rqs = I.OMO)(1) Voss Vdc Vd g r 400 Vdc Vgs Vdc Vgsm ±3 0 V Gate-Source Voltage Continuous Gate-Source Voltage Transient Drain Current Continuous (To = 25,C)
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4bflb22b
IXTE14N40X4
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Untitled
Abstract: No abstract text available
Text: PIXYS AdvancedTechnioal Information HiPerFET Power MOSFETs IXFR 80N20Q ISOPLUS247™, Q-Class Electrically Isolated Back Surface VOSS ID25 N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt trr <200 ns Symbol Test Conditions Maximum Ratings
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80N20Q
ISOPLUS247TM,
Cto150
247TM
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ix6h
Abstract: No abstract text available
Text: PIXYS Hi Per FAST IGBT with Diode IXGH 22N50BU1 CES *C<25 VCE sat)typ ^fi(typ) 500 V 44 A 2.1 V 55 ns Preliminary data Symbol Test Conditions VCES v CGR ^ = 25° C to 150° C T, = 25° C to 150° C; RGE= 1 MQ 500 500 V V VGES v GEM Continuous T ransient
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22N50BU1
O-247
ix6h
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pixy
Abstract: No abstract text available
Text: PiXYS a«i»«iawawiWBt»i High Current Power MOSFET . - V DSS IXTN 58N50 IXTN 61N50 500 V 500 V lg! F js n g g ìg R ^D25 DS on 58 A 85 mQ 61 A 75 m il N-Channel Enhancement Mode Symbol Test Conditions Voss v D0B Tj = 25°C to 150°C 500 V Tj = 25°C to 150°C; Rss= 1.0 M£2
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58N50
61N50
61N50
OT-227
E153432
C2-53
pixy
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Untitled
Abstract: No abstract text available
Text: PIXYS Phase Control Thyristor CS 630 ITRM Ss =1400A I' = 630 A VRRM = 1200-1600 V tavm Type 3 4 1200 1400 1600 1200 1400 1600 Symbol CS 630-12io1 CS 630-14io1 CS 630-16io1 Maximum Ratings Test Conditions 1400 630 A A 10 ms 50 Hz , sine 8.3 ms (60 Hz), sine
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630-12io1
630-14io1
630-16io1
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15N100
Abstract: No abstract text available
Text: PIXYS : MegaMOS FET IXTN 15N100 V DSS ID25 1000 V 15 A D 0.6 Q DS on N-Channel Enhancement Mode Symbol Test Conditions v Tj =25°Cto150°C 1000 V v DGB T, =25°C to 150° C; RGS= 10k£2 1000 V VGS VGSM Continuous ¿20 V Transient d30 V Us Tc =25°C 15 A
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15N100
OT-227
Cto150
C2-90
C2-91
15N100
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intel 80287
Abstract: ibm at motherboard 80286 intel 80286 TECHNICAL intel 80287 arithmetic coprocessor 80C287-16 ic 80286 intel 80C287 coprocessor
Text: 80C287 Coprocessor/Software Accelerator Performance Benchmarks by Linda Bishop INTRODUCTION The math coprocessor/software accelerator performing floating-point arithmetic helps your 80286-based com puter do more work in less time. A computer with a high-speed math coprocessor installed can perform
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80C287
80286-based
BLP88,
TSA88
AST100
intel 80287
ibm at motherboard 80286
intel 80286 TECHNICAL
intel 80287 arithmetic coprocessor
80C287-16
ic 80286
intel 80C287
coprocessor
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401J
Abstract: DHO 165 instruction set architecture intel i7 80C51 80C550 83C550 87C550
Text: T-V?7?-<97 Sigiratics 80C51-Based 8-Bit Microcontroller* 80C51 FAMILY DERIVATIVES 8XC550 overview NAPC/ SIGNETICS 8XC550 OVERVIEW The Signetics 8XC550 is a single-chip control oriented microcontroller in the 80C51 family. The 8XC550 has the same basic architecture
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80C51-Based
8XC550
80C51
bbS3154
00b5702
8XC55Q
80C51,
401J
DHO 165
instruction set architecture intel i7
80C550
83C550
87C550
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6008B
Abstract: No abstract text available
Text: HiPerFAST IGBT with Diode IXGH 24N60AU1 Symbol Test Conditions Maximum Ratings V C ES T j = 2 5 °C to 1 5 0 °C 600 V V CGR T,J = 25° C to 150° C; RCat„ = 1 MQ 600 V V t ges Continuous +20 V V GEM Transient t30 V ^C 25 Tc -2 5 C 48 A ^C90 T c = 9 0 3C
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24N60AU1
6008B
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200N06
Abstract: 4835 b 110N06 n
Text: HiPerFET Power MOSFETs v ' * f k 110 no7 IXFN 200 N07 IXFK110N06 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr i y p k o n n Nfifi D DSS ^D25 DS on 70 V 110 A 70 V 200 A 60 V 110 A 60 V 200 A trr < 250 ns 6 6 6 6 m£2 mQ mQ mQ TO-264 AA (IXFK)
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IXFK110N06
O-264
OT-227
E153432
13Fig,
110NO6
200M06
110N07
200N06
4835 b
110N06 n
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Untitled
Abstract: No abstract text available
Text: DIXYS AdvancedTechnical Information P Electrically Isolated Back Surface = = — DS(on) ~ o o 00 HiPerFET Power MOSFETs IXFR 15N80Q V DSS ISOPLUS247™ Q Class ^D25 V 13 A 0.60 a trr <250 ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances
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15N80Q
ISOPLUS247TM
247TM
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Untitled
Abstract: No abstract text available
Text: □IXYS IGBT with Diode IXSK 50N60AU1 VC E S I Combi Pack = 600 V = 75 A = 2.7 V C 25 V C E sat Short Circuit S O A Capability ?C G OE Sym bol T est C onditions V CES T j = 25°C to 150°C 600 V VCGR T.J = 25°C to 150°C; Rrp = 1 M£2 Cat 600 V M axim um Ratings
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50N60AU1
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Untitled
Abstract: No abstract text available
Text: nixY S Phase Control Thyristors v RRM T RMS T(AV)M V RSM V RRM v DSM V DRM V V 900 1300 Symbol Type ^TSM ’*6T 2 3 800 1200 CS 8-08io2 CS8-12io2 Test Conditions Maximum Ratings 25 16 A 250 270 A A t = 8.3 ms (60 Hz), sine 200 220 t = 10 ms (50 Hz), sine
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8-08io2
CS8-12io2
00D3D7L4
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Untitled
Abstract: No abstract text available
Text: Thyristor Modules Thyristor/Diode Modules MCC 162 iTRMS = 2 x 300 A MCD162 lTAVM =2x190A VRRM =800-1800 I WWW V v RSM V t rrm VDSM v ORM V V Version 1 Version 1 900 1300 1500 1700 1900 800 1200 1400 1600 1800 MCC 162-08io1 MCC 162-12io1 MCC 162-14io1 MCC 162-16io1
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MCD162
2x190A
162-08io1
162-12io1
162-14io1
162-16io1
162-18io1
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