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    Abstract: No abstract text available
    Text: I X Y S CORP IflE D 4bflb22b GOOOfc.34 b PIXYS I X T E 14 N 40 X 4 MAXIMUM RATINGS PER DEVICE IXTE14N40X4 Sym. Drain-Gate Voltage (Rqs = I.OMO)(1) Voss Vdc Vd g r 400 Vdc Vgs Vdc Vgsm ±3 0 V Gate-Source Voltage Continuous Gate-Source Voltage Transient Drain Current Continuous (To = 25,C)


    OCR Scan     		4bflb22b IXTE14N40X4 PDF

    f g megamos

    Abstract: megamos megamos 48 TO220H ID 48 Megamos megamos 13 IXGE
    Text: I X Y S CORP 16E 5 IS 4b fit55t Q000563 H H§ I T t-m MODULESand PACKAGES IXYS has made a major commitment to serve the military and aerospace industry with advanced power tech­ nology. Besides developing a superior fourth generation rugged process called HDMOS, IXYS has also invested


    OCR Scan     		ofMIL-S-19500 MIL-M-38510. f g megamos megamos megamos 48 TO220H ID 48 Megamos megamos 13 IXGE PDF

    f g megamos

    Abstract: megamos 13 megamos IXGE75N100Z ID 48 Megamos
    Text: I X Y S CORP 16E 5 IS 4 b fit55t Q000563 H H§ ITt-m MODULES and PACKAGES IXYS has made a major commitment to serve the military and aerospace industry with advanced power tech­ nology. Besides developing a superior fourth generation rugged process called HDMOS, IXYS has also invested


    OCR Scan     		fit55t Q000563 f g megamos megamos 13 megamos IXGE75N100Z ID 48 Megamos PDF