80N20Q Search Results
80N20Q Datasheets Context Search
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80N20Q
Abstract: TO264 footprint
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80N20Q 80N20Q O-247 O-268AA TO264 footprint | |
ixfh 26 n 49
Abstract: IRM80
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80N20Q ixfh 26 n 49 IRM80 | |
DSA003712Contextual Info: HiPerFETTM Power MOSFETs Q-Class IXFK 80N20Q IXFX 80N20Q VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt = 200 V = 80 A = 28 mW trr £ 200 ns Preliminary data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C |
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O-247 O-268 80N20Q 80N20Q O-264 DSA003712 | |
Contextual Info: nixY S Advanced Technical Information HiPerFET Power MOSFETs Q-Class IXFH 80N20Q 80N20Q N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt t V ~ ^ uu n s 1° OS Maximum Ratings Symbol Test Conditions V *oss Tj =25°Cto150°C 200 V Tj = 25° C to 150° C; RGS= 1 MQ |
OCR Scan |
80N20Q IXFT80N20Q Cto150 O-268 | |
Contextual Info: □ IXYS HHifl JL æ* X HiPerFET Power MOSFETs IXFH 80N20Q IXFK 80N20Q IXFT 80N20Q Q-Class N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, LowQg V^ = 200 V U = R ds ,o„, = trr < 200 ns 80 A 28m Q Preliminary data sheet Maximum Ratings Symbol TestConditions |
OCR Scan |
80N20Q | |
Contextual Info: DIXYS Advanced Technical Information HiPerFET Power MOSFETs Q-Class IXFK 80N20Q IXFX 80N20Q Maximum Ratings Test C onditions VOSS v DQB T j =25°Cto150°C 200 V T j = 25° C to 150° C; RGS= 1 Mi2 200 V v GS v GSM Continuous i2 0 V Transient ±30 V ^D25 |
OCR Scan |
80N20Q 80N20Q Cto150 O-264 PLUS247TM di/dts100A | |
Contextual Info: PIXYS AdvancedTechnioal Information HiPerFET Power MOSFETs IXFR 80N20Q ISOPLUS247™, Q-Class Electrically Isolated Back Surface VOSS ID25 N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt trr <200 ns Symbol Test Conditions Maximum Ratings |
OCR Scan |
80N20Q ISOPLUS247TM, Cto150 247TM | |
Contextual Info: HiPerFETTM Power MOSFETs Q-Class IXFK 80N20Q IXFX 80N20Q VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt = 200 V = 80 A = 28 mW trr £ 200 ns Preliminary data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C |
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O-247 O-268 80N20Q 80N20Q O-264 | |
ISOPLUS247Contextual Info: HiPerFETTM Power MOSFETs IXFR 80N20Q TM ISOPLUS247 , Q-Class Electrically Isolated Back Surface VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt trr £ 200 ns RDS(on) = 200 V = 71 A = 28mW Preliminary data Symbol Test Conditions Maximum Ratings |
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80N20Q ISOPLUS247 247T5 ISOPLUS247 | |
Contextual Info: HiPerFETTM Power MOSFETs VDSS ID25 IXFH 80N20Q IXFK 80N20Q IXFT 80N20Q Q-Class = 200 V = 80 A = 28 mW £ 200 ns RDS on t rr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR |
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80N20Q 80N20Q O-247 TAB25 O-268 | |
Contextual Info: HiPerFETTM Power MOSFETs IXFR 80N20Q TM ISOPLUS247 , Q-Class Electrically Isolated Back Surface VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt trr £ 200 ns RDS(on) = 200 V = 71 A = 28mW Preliminary data Symbol Test Conditions Maximum Ratings |
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80N20Q ISOPLUS247 | |
80N20Contextual Info: Preliminary Technical Information Extended FBSOA Power MOSFET IXTH1910 IXTT1910 IXTK1910 VDSS ID25 = 200V = 80A Ω ≤ 28mΩ RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C |
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IXTH1910 IXTT1910 IXTK1910 O-247 00A/s, 100ms 80N20 | |
transistor 12n60c
Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
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ISOPLUS247TM ISOPLUS247TM PLUS247TM-package FBO16-08N FBE22-06N1 21-05QC 22-08N 75-01F 21-08i01 transistor 12n60c 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET | |
12N60c equivalent
Abstract: 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q
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OCR Scan |
ISOPLUS220TM US247TM 247TM ISOPLUS22rM ISOPLUS227TM IXFE180N10 IXFE73N30Q IXFE48N50Q IXFE48N50QD2 12N60c equivalent 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q | |
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sd 20n60
Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
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O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80 | |
7n60b
Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
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AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80 | |
7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
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MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 | |
C1146
Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
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O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1146 C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60 | |
C1218
Abstract: C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10
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OCR Scan |
67N10 75N10 75N10Q 80N10Q O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 C1218 C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10 |