P3F filtronic
Abstract: pHEMT FET marking A FPD10000AF MIL-HDBK-263 PHEMT marking code a PHEMT marking code B
Text: PRELIMINARY FPD10000AF 10W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 40 dBm Output Power (P1dB) ♦ 11 dB Power Gain (G1dB) ♦ -44 dBc WCDMA ACPR at 30 dBm output power ♦ 180 to 300 mA typical quiescent current (IDQ) ♦ 55% Power-Added Efficiency
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FPD10000AF
FPD10000AF
FPD10000AF)
P3F filtronic
pHEMT FET marking A
MIL-HDBK-263
PHEMT marking code a
PHEMT marking code B
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PHEMT marking code a
Abstract: FET P2F pHEMT FET marking l transistor code p2f pHEMT FET marking A
Text: PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website
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FPD4000AF
FPD4000AF
PHEMT marking code a
FET P2F
pHEMT FET marking l
transistor code p2f
pHEMT FET marking A
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transistor SMD P2F
Abstract: FPD4000AF PHEMT marking code a pHEMT transistor 360 transistor STD P2F smd p2f transistor MIL-HDBK-263 transistor P2F ATC600S1R0 FET MARKING CODE
Text: PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website
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FPD4000AF
FPD4000AF
ATC600S330JW250
T491B105M035AS7015
RCI-0603-10R1J
PC-SP-000022-002
AMP-103185-2
transistor SMD P2F
PHEMT marking code a
pHEMT transistor 360
transistor STD P2F
smd p2f transistor
MIL-HDBK-263
transistor P2F
ATC600S1R0
FET MARKING CODE
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Motorola transistor smd marking codes
Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
Text: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.
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01248
Abstract: No abstract text available
Text: CFH 400 Preliminary Datasheet Low-Noise, High-Linearity Packaged pHEMT FET Description: The CFH 400 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications to 4 GHz such as PCS CDMA and
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sot43
Abstract: No abstract text available
Text: CFH 400 Preliminary Datasheet Low-Noise, High-Linearity Packaged pHEMT FET Description: The CFH 400 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications to 4 GHz such as PCS CDMA and
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ZO 607 MA
Abstract: 4948 ta 6203 CFH400 Q62702-G0116
Text: CFH 400 Preliminary Datasheet Low-Noise, High-Linearity Packaged pHEMT FET Description: The CFH 400 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications to 4 GHz such as PCS CDMA and
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OT343
400um
OT343:
OT343
ZO 607 MA
4948
ta 6203
CFH400
Q62702-G0116
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AS211-334
Abstract: No abstract text available
Text: DATA SHEET AS211-334: PHEMT GaAs IC SPDT Switch LF–4 GHz Applications ● Pin Out Top View General-purpose switch for telecommunication applications J3 1 6 2 5 3 4 V2 CBL Features P1 dB 30 dBm typical @ 3 V IP3 43 dBm typical @ 3 V ● Low insertion loss (0.3 dB @ 0.9 GHz)
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AS211-334:
J-STD-020
AS211-334
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S277
Abstract: QFN-20 reflow QFN-20 skyworks QFN-20
Text: PRELIMINARY DATA SHEET SKY13277-355LF: GaAs SP3T Absorptive Switch 500 MHz–2.5 GHz Features Functional Diagram Positive voltage control 0/3 V typ. ● High isolation 62 dB at 1 GHz ● Integrated silicon CMOS driver ● Isolated ports are absorptive ● Available lead (Pb)-free and RoHS-compliant MSL-1 @ 260°C
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SKY13277-355LF:
J-STD-020
SKY13277-355LF
20-lead
S277
QFN-20 reflow
QFN-20 skyworks
QFN-20
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S277
Abstract: QFN-20 SKY13277-355LF Marking s277 GND214
Text: DATA SHEET SKY13277-355LF: GaAs SP3T Absorptive Switch 500 MHz–2.5 GHz Features Functional Diagram Positive voltage control 0/3 V typ. ● High isolation 62 dB at 1 GHz ● Integrated silicon CMOS driver ● Isolated ports are absorptive ● Available lead (Pb)-free and RoHS-compliant MSL-1 @ 260°C
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SKY13277-355LF:
J-STD-020
SKY13277-355LF
20-lead
S277
QFN-20
Marking s277
GND214
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srf 3417
Abstract: transistor srf 3417 SKY77329 transistor tt 2170 em digrf SKY77519 MARKING CODE EA1 SKY77408 sky72302-21 sky77506
Text: Product Selection Guide Spring 2007 Skyworks Solutions Skyworks Solutions, Inc. is an innovator of high performance analog and mixed signal semiconductors enabling mobile connectivity. The company’s power amplifiers, front-end modules and direct conversion radios are at the heart of many of today’s leading-edge
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BRO254-07B
srf 3417
transistor srf 3417
SKY77329
transistor tt 2170 em
digrf
SKY77519
MARKING CODE EA1
SKY77408
sky72302-21
sky77506
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47146
Abstract: 41146
Text: CFH800 Preliminary Datasheet Low-Noise, High-Linearity Packaged pHEMT FET Description: The CFH800 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications to 4 GHz such as PCS CDMA and
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CFH800
OT343
47146
41146
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transmitter microwave
Abstract: marking 1GL marking code IAM transistor MARKING IAM A004R IAM-92516 IAM-92516-BLK IAM-92516-TR1 IAM-92516-TR2 MO229
Text: Agilent IAM-92516 High Linearity GaAs FET Mixer Data Sheet Features DC = 5V @ 26 mA Typ. RF = 1.91 GHz, PinRF = -10 dBm; LO = 1.7 GHz, PinLO = -3 dBm; IF = 210 MHz unlesss otherwise specified • Lead-free Option Available Description Agilent Technologies’s IAM-92516
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IAM-92516
IAM-92516
5989-0975EN
transmitter microwave
marking 1GL
marking code IAM
transistor MARKING IAM
A004R
IAM-92516-BLK
IAM-92516-TR1
IAM-92516-TR2
MO229
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MRF high power transistor
Abstract: transmitter microwave electronic transformer halogen mmds down converter "Up/Down Converter" amplifier marking code a FET GAAS marking a PHEMT marking code a gaas fet marking a gaas Low Noise Amplifier
Text: IAM-92516 High Linearity GaAs FET Mixer Data Sheet Description Avago Technologies’s IAM-92516 is a high linearity GaAs FET Mixer using 0.5 µm enhancement mode pHEMT technology. This device houses in Pb-free and Halogen free 16 pins LPCC 3x3[2] plastic package. The IAM-92516 has
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IAM-92516
IAM-92516
5989-0975EN
MRF high power transistor
transmitter microwave
electronic transformer halogen
mmds down converter
"Up/Down Converter"
amplifier marking code a
FET GAAS marking a
PHEMT marking code a
gaas fet marking a
gaas Low Noise Amplifier
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47146
Abstract: SOT43 402 5921
Text: CFH800 Preliminary Datasheet Low-Noise, High-Linearity Packaged pHEMT FET Description: The CFH800 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications to 4 GHz such as PCS CDMA and
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CFH800
47146
SOT43
402 5921
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transmitter microwave
Abstract: transistor MARKING IAM IAM-92516 IAM-92516-BLK IAM-92516-TR1 IAM-92516-TR2 MO229 Receiver Circuit Schematic
Text: Agilent IAM-92516 High Linearity GaAs FET Mixer Data Sheet Features DC = 5V @ 26 mA Typ. RF = 1.91 GHz, PinRF = -10 dBm; LO = 1.7 GHz, PinLO = -3 dBm; IF = 210 MHz unlesss otherwise specified • High Linearity: 27 dBm IIP3 Description Agilent Technologies’s IAM-92516
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IAM-92516
IAM-92516
5989-0975EN
transmitter microwave
transistor MARKING IAM
IAM-92516-BLK
IAM-92516-TR1
IAM-92516-TR2
MO229
Receiver Circuit Schematic
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FPD200P70
Abstract: TL11 TL22 l420 FPD200P70SR
Text: FPD200P70 FPD200P70 High Frequency Packaged pHEMT HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25mmx200mm Schottky barrier gate, defined by high-resolution stepper-based photolithography.
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FPD200P70
FPD200P70
25mmx200mm
20dBm
26GHz
15GHz
FPD200P70-AJ
TL11
TL22
l420
FPD200P70SR
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amplifier marking code D
Abstract: FET GAAS marking a gaas fet marking a gaas Low Noise Amplifier marking code IAM PHEMT marking code a am ssb receiver balun diode mixer marking 1GL SSB Receiver
Text: IAM - 93516 High Linearity Integrated GaAs Mixer Data Sheet Description Applications Avago Technologies’ IAM-93516 is a high linearity GaAs FET Mixer using 0.5um enhancement mode pHEMT technology. This device houses in a 3x3 LPCC package. The IAM-93516 has a built-in LO buffer amplifier and an IF amplification
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IAM-93516
IAM-93516
IAM-93516-TR1
IAM-93516-TR2
IAM-93516-BLK
5989-2800EN
amplifier marking code D
FET GAAS marking a
gaas fet marking a
gaas Low Noise Amplifier
marking code IAM
PHEMT marking code a
am ssb receiver
balun diode mixer
marking 1GL
SSB Receiver
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FPD200P70
Abstract: transistor marking code 1325 RO29 "IPC 1752" gold L130
Text: FPD200P70 Data sheet v4.0 HIGH FREQUENCY PACKAGED PHEMT FEATURES: • • • • • • PACKAGE 20 dBm Output Power P1dB 17 dB Gain at 5.8 GHz 0.7 dB Noise Figure at 5.8 GHz 30 dBm Output IP3 45% Power-Added Efficiency Useable Gain to 26 GHz RoHS 9 GENERAL DESCRIPTION:
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FPD200P70
26GHz
FPD200P70
J-STD-020C,
transistor marking code 1325
RO29
"IPC 1752" gold
L130
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Untitled
Abstract: No abstract text available
Text: FPD200P70 HIGH FREQUENCY PACKAGED PHEMT FEATURES: • • • • • • Data sheet v2.2 PACKAGE 20 dBm Output Power P1dB 17 dB Gain at 5.8 GHz 0.7 dB Noise Figure at 5.8 GHz 30 dBm Output IP3 45% Power-Added Efficiency Useable Gain to 26 GHz RoHS 9 GENERAL DESCRIPTION:
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FPD200P70
FPD200P70
26GHz
85GHZ
18GHZ
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IAM93516
Abstract: IAM-93516 IAM-93516-BLK IAM-93516-TR1 IAM-93516-TR2
Text: Agilent IAM-93516 High Linearity Integrated GaAs Mixer Data Sheet Description Agilent Technologies’s IAM93516 is a high linearity GaAs FET Mixer using 0.5um enhancement mode pHEMT technology. This device houses in a 3x3 LPCC package. The IAM-93516 has a built-in LO
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IAM-93516
IAM93516
IAM-93516-TR2
IAM-93516-BLK
5989-2800EN
IAM-93516-BLK
IAM-93516-TR1
IAM-93516-TR2
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CFH120-08
Abstract: No abstract text available
Text: CFH 120-08 Datasheet Low Noise pHEMT Packaged FET Description: The CFH 120-08 is a high linearity, very low noise pHEMT FET for general purpose, low noise front-end applications. Noise figures as low as 0.65 dB with associated gain of 12 dB are achievable at 12 GHz
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Untitled
Abstract: No abstract text available
Text: CFH 120-08 Datasheet Low Noise pHEMT Packaged FET Description: The CFH 120-08 is a high linearity, very low noise pHEMT FET for general purpose, low noise front-end applications. Noise figures as low as 0.65 dB with associated gain of 12 dB are achievable at 12 GHz
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sot marking a1 353
Abstract: ATF-34143-BLKG ATF-34143 A004R ATF-33143 ATF-34143-BLK ATF-34143-TR1 ATF-34143-TR2 LA 7873
Text: ATF-34143 Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Based on its featured performance, ATF-34143 is ideal for the first stage of base station LNA due to the excellent combination of low noise figure and high linearity[1]. The device is also suitable for
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ATF-34143
OT-343
SC-70)
5989-1916EN
5989-3746EN
sot marking a1 353
ATF-34143-BLKG
A004R
ATF-33143
ATF-34143-BLK
ATF-34143-TR1
ATF-34143-TR2
LA 7873
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