Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B300Y NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor RX1214B300Y FEATURES PINNING - SOT439A
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RX1214B300Y
OT439
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uhf transistor amplifier
Abstract: BGY172 SC09 uhf amplifier
Text: DISCRETE SEMICONDUCTORS DATA SHEET BGY172 UHF amplifier module Objective specification File under Discrete Semiconductors, SC09 1996 May 22 Philips Semiconductors Objective specification UHF amplifier module BGY172 FEATURES PINNING - SOT434A • 7.2 V nominal supply voltage
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BGY172
OT434A
BGY172
OT434A
uhf transistor amplifier
SC09
uhf amplifier
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C 245 B
Abstract: diode u2 40 sot437a philips 648
Text: PDF: 1999 Apr 16 Philips Semiconductors Package outline Flanged ceramic package; 2 mounting holes; 2 leads SOT437A D A F 3 D1 U1 B q C c 1 H U2 E E1 A w1 M A M B M p 2 w2 M C M b Q 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions
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OT437A
C 245 B
diode u2 40
sot437a
philips 648
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Untitled
Abstract: No abstract text available
Text: Package outline Flanged ceramic package; 2 mounting holes; 2 leads SOT437A D A F 3 D1 U1 B q C c 1 H U2 E E1 A w1 M A M B M p 2 w2 M C M b Q 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions UNIT A b c D D1 E E1
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OT437A
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Untitled
Abstract: No abstract text available
Text: PDF: 2003 Mar 24 Philips Semiconductors Package outline HSQFP208: plastic thermal enhanced shrink quad flat package; 208 leads lead length 1.3 mm ; body 28 x 28 x 3.4 mm; high stand-off height; heatsink SOT431-1 c y X A Dh 156 157 105 104 ZE e E HE Eh A A2
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HSQFP208:
OT431-1
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MGS956
Abstract: TRansistor CQ 648
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18040XL UHF power transistor Product specification 1999 Dec 06 Philips Semiconductors Product specification UHF power transistor LLE18040XL FEATURES PINNING - SOT437A • Emitter ballasting resistors for optimum temperature
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M3D159
LLE18040XL
OT437A
LLE18040XL
125002/01/pp12
MGS956
TRansistor CQ 648
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sot433
Abstract: No abstract text available
Text: PDF: 1999 Apr 16 Philips Semiconductors Package outline PLCC52: plastic leaded chip carrier; 52 leads; thin version SOT433-1 eD eE y X 46 A 34 33 47 ZE bp b1 w M 52 E 1 pin 1 index HE A A4 e A1 A 3 7 β 21 Lp detail X 8 k 20 e v M A ZD D B HD v M B 5 10 mm
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PLCC52:
OT433-1
OT433-1
sot433
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LQFP160
Abstract: sot435
Text: PDF: 1999 Apr 16 Philips Semiconductors Package outline LQFP160: plastic low profile quad flat package; 160 leads; body 24 x 24 x 1.4 mm SOT435-1 c y X A 120 81 121 ZE 80 e E HE A A2 A1 A 3 θ wM Lp bp L detail X pin 1 index 41 160 1 40 bp e ZD wM v M A
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LQFP160:
OT435-1
LQFP160
sot435
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Untitled
Abstract: No abstract text available
Text: PDF: 1999 Apr 16 Philips Semiconductors Package outline Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT439A D A F 3 D1 U1 B q C c 1 H p U2 A E1 E w1 M A M B M 2 w2 M C M b Q 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions
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OT439A
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B0813
Abstract: PT9787 8C440 MJ3237 trw PT9787 MM4048 MJE42C MJ2841 MOTOROLA MM1758 mmt2857
Text: POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 NA31KY NA31MH NA31 MY SK3248 NA31KI NA31MI NA31KJ NA31MJ ~~~~g: 25 30 2NS204 S15-28 SMl5501 SMl550S SMl5511 SMl5901 SMl590S SMl5911 ~~~j~~ 35 40 80Y10 80Y10 PT9787 PT9787A 2N4431 2S022S 2S0226 SOT4301
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2SC109S
2NS714
92PU01
2S0180S
MPSU01
NSOU01
92GU01
NA31KY
B0813
PT9787
8C440
MJ3237
trw PT9787
MM4048
MJE42C
MJ2841 MOTOROLA
MM1758
mmt2857
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MX0912B351Y
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B351Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor MX0912B351Y FEATURES PINNING - SOT439A
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MX0912B351Y
OT439A
SCA53
127147/00/02/pp12
MX0912B351Y
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MX0912B251Y
Abstract: capacitor 470 uF
Text: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B251Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor MX0912B251Y FEATURES PINNING - SOT439A
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MX0912B251Y
OT439A
SCA53
127147/00/02/pp12
MX0912B251Y
capacitor 470 uF
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RX1214B300Y
Abstract: RX1214B300 L-Band
Text: DISCRETE SEMICONDUCTORS DATA SHEET RX1214B300Y NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor RX1214B300Y FEATURES PINNING - SOT439A
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RX1214B300Y
OT439A
SCA53
127147/00/02/pp12
RX1214B300Y
RX1214B300
L-Band
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT MX0912B251Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor MX0912B251Y FEATURES PINNING - SOT439A • Interdigitated structure; high emitter efficiency
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MX0912B251Y
OT439A
SCA53
127147/00/02/pp12
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SOT430
Abstract: jumbo led datasheet TO-247
Text: PDF: 1999 Sep 14 Philips Semiconductors Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-247 Jumbo E SOT430 A P A1 q R S D Y R1 R2 R2 L1 1 Q b2 L 1 2 3 c w M b b1 e e 10 20 mm scale DIMENSIONS (mm are the original dimensions)
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O-247
OT430
SOT430
jumbo led datasheet
TO-247
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RX1214B300Y
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES RX1214B300Y PINNING - SOT439A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
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OT439A
MBH904
MBH903
RX1214B300Y
RX1214B300Y
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gk06
Abstract: microwave transistor S- parameter GK066
Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES MX0912B251Y PINNING - SOT439A • Interdigitated structure; high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
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OT439A
100A101KP50X
MX0912B251Y
GK066
gk06
microwave transistor S- parameter
GK066
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BGY172
Abstract: No abstract text available
Text: Objective specification Philips Semiconductors UHF amplifier module BGY172 PINNING - SOT434A FEATURES • 7.2 V nominal supply voltage PIN • 5 W output power 1 • Easy output power control by DC voltage. 2 DESCRIPTION RF input + V c APPLICATIONS 4 Vsi Vs2
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BGY172
BGY172
OT434A
OT434A
MSA491
711002b
0103S15
OT434A.
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RF MOSFET MODULE
Abstract: BGY152A BGY152B
Text: Preliminary specification Philips Semiconductors UHF amplifier modules BGY152A; BGY152B FEATURES PINNING - SOT434A • 7.2 V nominal supply voltage DESCRIPTION PIN • 7 W output power 1 RF input + Vc • Easy output power control by DC voltage. 2 Vsi 3 Vs2
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BGY152A;
BGY152B
BGY152A
BGY152B
OT434A
711002b
I//10
MSA490
RF MOSFET MODULE
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BUT11A1
Abstract: Power Bipolar Transistors bu2708dx BU2725DX BU1508AX BU4506AX BU2532 BU4506AF BU2720DX BU2527
Text: LEADED PACKAGES VcESM V 1500 tf lc lc (DC) sat. max. (A) 2.5 (A) 2 fas) 0.9 S0T82 S0T78 (T0220AB) S0T186A S0T186 (isolated S0T199 T0220AB) BU505 BU505D BU505F BU505DF BU506 BU506D BU506F BU506DF S0T399 (TOP3D) SOT429 (T0247) SOT430 (TOP3L) TYPICAL APPLICATIONS
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S0T82
S0T78
T0220AB)
BU505
BU505D
BU506
BU506D
S0T186A
S0T186
BU505F
BUT11A1
Power Bipolar Transistors
bu2708dx
BU2725DX
BU1508AX
BU4506AX
BU2532
BU4506AF
BU2720DX
BU2527
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SMD Transistor G6
Abstract: BLV2044 SMD ic catalogue
Text: Philips Semiconductors Product specification UHF power transistor BLV2044 FEATURES PINNING - SOT437A • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and output matching to achieve high
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BLV2044
OT437A
SMD Transistor G6
BLV2044
SMD ic catalogue
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JH transistor
Abstract: MX0912B251Y SC15 Philips electrolytic screw
Text: Philips Semiconductors Product specification NPN microwave power transistor MX0912B251Y FEATURES PINNING - SOT439A • Interdigitated structure; high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
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MX0912B251Y
OT439A
MBC881
OT439A.
JH transistor
MX0912B251Y
SC15
Philips electrolytic screw
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Power Bipolar Transistors
Abstract: No abstract text available
Text: PACKAGE OUTLINES Page SOT78 T0-220AB SOT82 SOT186(10-220) S O U 86A (Isolated TO-220AB) SOT199 SOT399 (TOP3D) 754 755 756 757 758 759 SOT429 (TO-247) SOT43Q (TOP3L) 760 761 Philips Semiconductors Power Bipolar Transistors Package outlines Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-22QAB
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T0-220AB)
OT186
O-220AB)
OT199
OT399
OT429
O-247)
OT43Q
O-22QAB
O-247
Power Bipolar Transistors
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GL-056
Abstract: sot439
Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES MX0912B351Y PINNING - SOT439A • Interdigitated structure; high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
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OT439A
100A101KP50X
MX0912B351Y
GL-056
sot439
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