Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    PH-15 TRANSISTOR Search Results

    PH-15 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    PH-15 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: subject to change without notice September 15, 2003 3260 Data Sheet 27631.50 ADVANCE INFORMATION 2-WIRE, CHOPPER-STABILIZED, PRECISION HALL-EFFECT BIPOLAR SWITCH Suffix Code 'LH' Pinning (SOT23W) 3 X NC NO (INTERNAL) CONNECTION Dwg. PH-003-5 2 GROUND SUPPLY


    Original     		PDF OT23W) A3260--

    GH-007-4

    Abstract: 3362 resistor
    Text: subject to change without notice September 15, 2003 3361 AND 3362 Data Sheet 27621.50* PRELIMINARY INFORMATION 2-WIRE, CHOPPER-STABILIZED, HALL-EFFECT SWITCHES Suffix Code 'LH' Pinning (SOT23W) 3 X NC NO (INTERNAL) CONNECTION Dwg. PH-003-5 2 GROUND SUPPLY


    Original     		PDF OT23W) A3361x A3362x MH-026 GH-007-4 3362 resistor

    philips diode PH 33D

    Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


    Original     		PDF 1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE

    philips diode PH 33D

    Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817


    Original     		PDF 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A philips diode PH 33D PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m

    BFQ67F

    Abstract: BFR181TF BFR182TF BFR183TF BFR193TF BFR92AF BFR93AF S852TF SC89 SC-89
    Text: RF Transistors in SOT490 SC89 Package w w w. v i s h a y. c o m PRODUCT OVERVIEW THE SMALLER THE BETTER THE SMALLER THE BETTER RF Transistors in SOT490 (SC89) Package With the new SOT490 (SC-89), Vishay Semiconductors offers a space-saving 3-pin surface-mount package that takes electrical performance and reliability


    Original     		PDF OT490 SC-89) OT490 OT323, OT323 VHN-PO1311-0405 BFQ67F BFR181TF BFR182TF BFR183TF BFR193TF BFR92AF BFR93AF S852TF SC89 SC-89

    marking A4t sot23

    Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE


    Original     		PDF 1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p

    single phase half bridge inverter

    Abstract: IGBT gate drive board fire sensor LM35 single phase IGBT based PWM inverters LEM sensor CURRENT single phase igbt based inverter 200 amps circuit board 5045-04A single phase igbt based inverter 200 amps circuit lem HA Lm35 with application note
    Text: APPLIED POWER SYSTEMS, INC. BAP1551 Gate Drive Board BAP1551 Gate Drive Board Application Note and Datasheet for Half Bridge Inverters Patent Pending Introduction The BAP1551 Insulated Gate Bipolar Transistor IGBT Gate Drive Board (GDB) discussed in this Datasheet/Applications Note provides a safe, reliable, isolated interface between control


    Original     		PDF BAP1551 LM-35 single phase half bridge inverter IGBT gate drive board fire sensor LM35 single phase IGBT based PWM inverters LEM sensor CURRENT single phase igbt based inverter 200 amps circuit board 5045-04A single phase igbt based inverter 200 amps circuit lem HA Lm35 with application note

    80mAF

    Abstract: 6069 marking
    Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability


    Original     		PDF BFP650 VPS05605 OT343 Aug-16-2004 80mAF 6069 marking

    BFP620

    Abstract: BFP620 acs BFP620 applications note GFT45
    Text: BFP620 NPN Silicon Germanium RF Transistor 3 4  High gain low noise RF transistor  Provides outstanding performance for a wide range of wireless applications 2  Ideal for CDMA and WLAN applications  Outstanding noise figure F = 0.7 dB at 1.8 GHz 1 VPS05605


    Original     		PDF BFP620 VPS05605 OT343 Apr-07-2003 BFP620 BFP620 acs BFP620 applications note GFT45

    Untitled

    Abstract: No abstract text available
    Text: BFP620 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz


    Original     		PDF BFP620 VPS05605 OT343 Aug-11-2004

    712 transistor smd sot23

    Abstract: 33m ph diode smd transistor 718 diode PH 33m
    Text: Value Code Inductor ph Code .01 .012 .015 .018 000 Oil 001 009 ph Code pFID. .10 .12 .15 .18 010 012 015 018 _ _ . _ .022 002 .22 022 _ _ - _ .027 007 .27 027 - _ .033 003 .33 033 _ - - - .039 009 .39 039 . _ _ - _ .047 004 .47 047 _ _ - _ .056 005 .56 056


    OCR Scan     		PDF SX3512 SX5020 712 transistor smd sot23 33m ph diode smd transistor 718 diode PH 33m

    Untitled

    Abstract: No abstract text available
    Text: Aß Avionics Pulsed Power Transistor PH 1090-15S Preliminary 15 Watts, 1030-1090 MHz, 10 jis Pulse, 1% Duty Features • • • • • • • • • Outline Drawing Designed for Short Pulse IFF Applications NPN Silicon Microwave Power Transistor Common Base Configuration


    OCR Scan     		PDF 1090-15S 5b422D5

    K 3115

    Abstract: transistor marking code 325 bf550R transistor jt BF550 PHILIPS 1980 MARKING SA transistor transistor marking SA
    Text: I N AMER PH IL bbS3T31 001S7QÔ =1 IP S/»IS CRETE_ O b E ^ BF550 3 ¡ - 15- r - SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor, in a microminiature plastic envelope, intended for applications in thick and thin-film circuits. This transistor Is primarily intended for use in i.f. detection applications.


    OCR Scan     		PDF 001S7QÃ BF550 bbS3T31 0Q15710 BF550 T-31-15 K 3115 transistor marking code 325 bf550R transistor jt PHILIPS 1980 MARKING SA transistor transistor marking SA

    C2631 transistor

    Abstract: IC vco 900 1800 mhz 12pf varactor c2631 SA900 transistor c2631 IS-54 KV1470 SA7025 SA900BE
    Text: RF COMMUNICATIONS PRODUCTS U M P k S l n l E E SA900 l/Q transmit modulator Product specification December 15, 1994 IC17 Data Handbook Philips Semiconductors PHILIPS PH ILIPS 9 711002b Q0AM5Ô0 551 This Material Copyrighted By Its Respective Manufacturer Philips Semiconductors RF Communications Products


    OCR Scan     		PDF SA900 711002b SA900 C2631 transistor IC vco 900 1800 mhz 12pf varactor c2631 transistor c2631 IS-54 KV1470 SA7025 SA900BE

    BUK455-600B

    Abstract: BUK455-600A BUK455 T0220AB
    Text: N AMER PH I L I P S / D I S C R E T E 2 5 E ^53=131 D 0 0 S D 5 15 1 PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		PDF 00SD515 BUK455-600A BUK455-600B T-21-13 BUK455 -600A -600B BUK455-600B BUK455-600A T0220AB

    55 volt switching power supply circuit

    Abstract: Fairchild 2N709 2N709 max 550 transistor All similar transistor fairchild micrologic transistor CC 11 A transistor 60 volt fairchild transistor FD200
    Text: • n>L N O V EM BER 1964 103, n>L 104 — FAIRCHILD PH YSICAL DIMENSIONS wide tem perature range. Typical propagation delay at 600 pf load capacitance and a fan-out of 15 is less than 50 nsecfrom -55°C to +125°C, and is le ss than 20 nsec at a load capacitance of 50 pf and a fan-out of 7 at any tem perature.


    OCR Scan     		PDF W10TH 180ft FD-200 2N709 55 volt switching power supply circuit Fairchild 2N709 max 550 transistor All similar transistor fairchild micrologic transistor CC 11 A transistor 60 volt fairchild transistor FD200

    KRC107S

    Abstract: KRC108S KRC109S
    Text: KRC107SKRC109S SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.


    OCR Scan     		PDF KRC107S-SEMICONDUCTOR KRC109S KRC107S KRC108S KRC109S OT-23 KRC107S

    KRA107S

    Abstract: KRA108S KRA109S
    Text: KRA107SSEMICONDUCTOR KRA109S EPITAXIAL PLANAR PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • With Built-in Bias Resistors • Simplify Circuit Design • Reduce a Quantity of Parts and Manufacturing Process


    OCR Scan     		PDF KRA107S-KRA109S KRA107S KRA108S KRA109S OT-23 KRA107S KRA109S KRA108S

    kra102s equivalent

    Abstract: KRA104S kra102s KRA101S-KRA106S 106S KRA101S KRA103S KRA105S KRA106S transistor mark PH
    Text: K R A IO ISKRA106S SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.


    OCR Scan     		PDF KRA101S- KRA106S KRA101S KRA102S KRA103S KRA104S KRA105S KRA106S KRA105S kra102s equivalent KRA101S-KRA106S 106S transistor mark PH

    ph-13 transistor

    Abstract: KTA1664 KTC4376
    Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTA1664 EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURES • 1W Mounted on Ceramic Substrate . • Small Flat Package. • Complementary to KTC4376. MAXIMUM RATINGS (Ta=25 °C) MILLIMETERS


    OCR Scan     		PDF KTA1664 KTC4376. 250mm2 ph-13 transistor KTA1664 KTC4376

    KTC4520

    Abstract: TT-B-2
    Text: KEC SEMICONDUCTOR KTC4520 TECHNICAL D A TA KOREA ELECTRONICS CO.,LTD. TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. FEATURES • Excellent Switching Times. : ton=0.5juS Max. , tf=0.3j/S(M ax.), a t Ic=2A.


    OCR Scan     		PDF KTC4520 220AB ELECTR05 KTC4520 TT-B-2

    CI L200

    Abstract: KTC4521
    Text: SEMICONDUCTOR KTC4521 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. FEATURES • Excellent Switching Times. : ton=0.5iiS Max. , tf=0.3/iS(Max.), at IC=4A. • High Collector Voltage : V c e o = 5 0 0 V .


    OCR Scan     		PDF KTC4521 200/iH CI L200 KTC4521

    marking ph SOT-89

    Abstract: C4372 KTA1660 KTC4372 kec marking SOT
    Text: SEMICONDUCTOR TECHNICAL D A TA KTC4372 TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE SWITCHING APPLICATION. FEATURES • • • • • High Voltage : V ceo = 1 5 0 V . High Transition Frequency : fT=120MHz. 1W Mounted on Ceramic Substrate . Small Flat Package.


    OCR Scan     		PDF KTC4372 120MHz. KTA1660. 250mm2x Ta-25 marking ph SOT-89 C4372 KTA1660 KTC4372 kec marking SOT

    F40 marking

    Abstract: KTC3882
    Text: KTC3882 SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. TV TUNER, VHF OSCILLATOR APPLICATION. A MILLIMETERS 2.93+0.20 B 1.30+0.20/—0.15 C D 1.30 MAX 0.45+0.15/—0.05 E 2.40+0.3 0 /- 0 .20 DIM MAXIMUM RATINGS Ta=25°C


    OCR Scan     		PDF KTC3882 OT-23 50MHzV F40 marking KTC3882