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    6010.5

    Abstract: TT50M50A a2024a
    Text: L3E D 5b422D5 0000031 OMT HAP MICROW AVE PULSED POWER TRANSISTOR PH1214-2.0M PRELIMINARY REV. NC 05/05/92 n/A-con p h M/A-COM PHI, INC. o DESIGN CHARACTERISTICS 100 uS Pulse Operation Broadband 1.2 - 1 . 4 GHz Operation Common Base Configuration Gold Metallization System


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    PDF 5b422D5 PH1214-2 A2024A 6010Metallization ATC100A TT50M50A. 6010.5 TT50M50A

    Untitled

    Abstract: No abstract text available
    Text: AjtÁ CW Power Transistor PH2323-6 Preliminary 6.0 Watts, 2.30 GHz Features Outline Drawing • NPN Silicon Microwave Power Transistor • Common Base Configuration • Class C Operation • Interdigitated Geometry • Diffused Emitter Ballasting Resistors


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    PDF PH2323-6 513MM) 5b422D5 00013D3

    MA47221

    Abstract: No abstract text available
    Text: Afocm M an A M P com pany Stripline PIN Diode Switch Modules MA47200 Series Features • • • • • • Broadband 50 Ohm Designs Through X Band Circuit Characterized High Power Capacity Voltage Ratings to 1000 Volts Fast Switching Speed to 10 Nanoseconds


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    PDF MA47200 5b422D5 MA47221

    transistor 936

    Abstract: 100 watt hf mosfet 12 volt 150 watt hf transistor 12 volt transistor qz transistor rf m 2528 DU2840V 100 watt hf transistor 12 volt 1000 watt hf transistor 12 volt atc ldo LDS100
    Text: A tÓ K m m an A M P com pany RF MOSFET Power Transistor, 40W, 28V 2 -1 7 5 MHz DU2840V Features • • • • • • N-Channel Enhancement Mode Device HF to VHF Applications 40 Watts CW Common Source Push-Pull Configuration DMOS Structure Aluminum Metallization


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    PDF DU2840V 5b422D5 C7C9C12C14 C10C13C15 5b4BE05 transistor 936 100 watt hf mosfet 12 volt 150 watt hf transistor 12 volt transistor qz transistor rf m 2528 DU2840V 100 watt hf transistor 12 volt 1000 watt hf transistor 12 volt atc ldo LDS100

    F300

    Abstract: No abstract text available
    Text: CW Power Transistor A fa PH0303-8 8.0 Watts, 300-325 MHz Features • • • • • • • Outline Drawing NPN Silicon Power Transistor Common Emitter Configuration Class AB Broadband Operation Diffused Emitter Ballasting Resistors Gold Metallization System


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    PDF PH0303-8 5b422D5 0DD1172 F300

    Untitled

    Abstract: No abstract text available
    Text: Aß Avionics Pulsed Power Transistor PH 1090-15S Preliminary 15 Watts, 1030-1090 MHz, 10 jis Pulse, 1% Duty Features • • • • • • • • • Outline Drawing Designed for Short Pulse IFF Applications NPN Silicon Microwave Power Transistor Common Base Configuration


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    PDF 1090-15S 5b422D5

    2N6665

    Abstract: MA42001-509 2N6665-509 MA42181-510 2n5054 RF NPN POWER TRANSISTOR C 10-50 GHZ 2N2857 Model MA42001 ma42 transistor 2N3953
    Text: an A M P com pany General Purpose Low Noise Bipolar Transistors Features Case Styles • Low Noise Through 1.5 GHz • Hermetic Package • Can Be Screened to JAN, JANTX, JANTXV Levels Description The series of Silicon NPN bipolar transistors are designed


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    PDF SL42E05 M220S 0001fl11 2N6665 MA42001-509 2N6665-509 MA42181-510 2n5054 RF NPN POWER TRANSISTOR C 10-50 GHZ 2N2857 Model MA42001 ma42 transistor 2N3953