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    onsemi SB80W10T-H

    DIODE ARRAY SCHOTTKY 100V 8A TP
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    W10TH Datasheets Context Search

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    IC 74C14

    Abstract: catalyst 2736 CI 74C00 capacitor 100vf AN23-2 24 volt 200 w to mosfet inverter circuit diagram ic cd4066 PTC104 Voltage to Current Converter dual 4-20mA scheme LT1006
    Text: r j untAß Application Note 23 April 1987 TECHNOLOGY Micropower Circuits for Signal Conditioning Jim Williams Low power operation of electronic apparatus has become increasingly desirable. Medical, remote data acquisition, power monitoring and other applications are good candi­


    OCR Scan     		PDF LT1G22 LT101Q LT1010 50uftc IC 74C14 catalyst 2736 CI 74C00 capacitor 100vf AN23-2 24 volt 200 w to mosfet inverter circuit diagram ic cd4066 PTC104 Voltage to Current Converter dual 4-20mA scheme LT1006

    ap415

    Abstract: 1a 19br
    Text: in t e T APPLICATION NOTE AP-415 J July 1966 r i 83C51FA/FB PCA Cookbook B E T SY J O N E S ECO APPLICATIONS ENG IN EER Intel Corporation. 19BB 2-244 Order Number 270609-001 AP-415 This ap p licatio n n o te illu stra te s th e differen t functions ,. f the P ro g ra m m a b le C o u n te r A rra y P C A ) w hich are


    OCR Scan     		PDF AP-415 83C51FA/FB AP-415 1111UM AP-425 ap415 1a 19br

    SKE440A

    Abstract: 1N820 SKE33 I-5KE16 SKE43 SKE62A 1N6204A SKE51A 1N620 1N8288A
    Text: 1.5KE6.8 THRU 1.5KE440CA GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR Breakdown Voltage - 6.8 to 440 Volts Peak Pulse Power - 1500 Watts FEATURES C í e Style 1JKH • Plastic package has Underwriters Laboratory Flammability Classification 94V-0


    OCR Scan     		PDF 5KE440CA FXL10 W10TH SKE440A 1N820 SKE33 I-5KE16 SKE43 SKE62A 1N6204A SKE51A 1N620 1N8288A

    diode by 26E

    Abstract: diagram pulsa 2N6796 DIODE ON u1E
    Text: 3875081 G E SOLID STATE Dll dÎF| 3fl7SDfil DD1Û41A □ I T ’ S ?-£>? sian a a ra row er M O SFET s 2N6796 File Num ber 1594 Power MOS Field-Effect Transistors p N-Channel Enhancement-Mode Power Field-Effect Transistors


    OCR Scan     		PDF GDlfl41fl 2N6796 2N6796 diode by 26E diagram pulsa DIODE ON u1E

    K1461

    Abstract: BD180 transistor with gain 10 BD176 BD179 BD176 motorola
    Text: MOTO RO LA SC XSTRS/R 1EE D § F MOTOROLA 0004715 b | BD176,-6,-10,-16 BD180,-6,-10 SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR 3.0 AMPERES POWER TRANSISTOR PNP SILICON . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers


    OCR Scan     		PDF BD180 BD179 BD176 K1461 transistor with gain 10 BD179 BD176 motorola