NTK3134NT1G
Abstract: NTK3134N NTK3134NT5G SC89 mosfet marking kf
Text: NTK3134N Power MOSFET 20 V, 890 mA, Single N−Channel with ESD Protection, SOT−723 Features • • • • • http://onsemi.com N channel Switch with Low RDS on 44% Smaller Footprint and 38% Thinner than SC89 Low Threshold Levels Allowing 1.5 V RDS(on) Rating
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NTK3134N
OT-723
NTK3134N/D
NTK3134NT1G
NTK3134N
NTK3134NT5G
SC89
mosfet marking kf
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Untitled
Abstract: No abstract text available
Text: UM5304EEXF Quad Channel Low Capacitance ESD Protection Array UM5304EEAF UM5304EEBF UM5304EECF SC70-6/SC88/SOT363 SC89-6/SOT563/SOT666 TSOP-6/SOT23-6 General Description UM5304EEXF are surge rated diode arrays designed to protect high speed data interfaces. This series has been
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UM5304EEXF
UM5304EEAF
UM5304EEBF
UM5304EECF
SC70-6/SC88/SOT363
SC89-6/SOT563/SOT666
TSOP-6/SOT23-6
UM5304EEXF
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AO5800E
Abstract: Qg (nC) 70°C SC-89-6 SC89-6L alpha omega
Text: AO5800E Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO5800E uses advanced trench technology to provide excellent RDS ON , low gate charge, and operation with gate voltages as low as 4.5V, in the small SC89-6L footprint. It can be used for a wide
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AO5800E
AO5800E
SC89-6L
AO5800EL
-AO5800EL
SC-89-6
Param0001
Qg (nC)
70°C
SC-89-6
alpha omega
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SC89
Abstract: No abstract text available
Text: Tape Information Vishay Siliconix Ĭ1.50"0.10 4.00"0.10 2.00"0.05 0.229"0.013 4.00"0.10 1.73"0.10 1.85 " 0.10 3.50 " 0.05 1.37 8.00 +0.20/- 0.10 1.75 " 0.10 SC89_3L 1.02"0.10 Ĭ0.40"0.10 0.229 "0.013 0.51 NOTES: 1. Mat’l: P.C Conductive 2. Surface Resistivity: Max 105 Ω/Sq
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S-04789-
Oct-01
11-Oct-01
SC89
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AO5800E
Abstract: SC-89-6 SC89-6L
Text: AO5800E Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO5800E uses advanced trench technology to provide excellent RDS ON , low gate charge, and operation with gate voltages as low as 4.5V, in the small SC89-6L footprint. It can be used for a wide
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AO5800E
AO5800E
SC89-6L
SC-89-6
SC-89-6
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Untitled
Abstract: No abstract text available
Text: AO5800E Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO5800E uses advanced trench technology to provide excellent RDS ON , low gate charge, and operation with gate voltages as low as 4.5V, in the small SC89-6L footprint. It can be used for a wide
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AO5800E
AO5800E
SC89-6L
AO5800EL
-AO5800EL
SC-89-6
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Untitled
Abstract: No abstract text available
Text: AO5800E Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO5800E uses advanced trench technology to provide excellent RDS ON , low gate charge, and operation with gate voltages as low as 4.5V, in the small SC89-6L footprint. It can be used for a wide
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AO5800E
AO5800E
SC89-6L
SC-89-6
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Untitled
Abstract: No abstract text available
Text: NTK3134N Power MOSFET 20 V, 890 mA, Single N−Channel with ESD Protection, SOT−723 Features • • • • • http://onsemi.com N−Channel Switch with Low RDS on 44% Smaller Footprint and 38% Thinner than SC89 Low Threshold Levels Allowing 1.5 V RDS(on) Rating
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NTK3134N
OT-723
NTK3134N/D
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Si1034CX-T1-GE3
Abstract: SC-89-6
Text: Specification Comparison Vishay Siliconix Si1034CX vs. Si1034X Description: Package: Pin Out: Dual N-Channel, 20 V D-S MOSFET SC89-6 Identical Part Number Replacements: Si1034CX-T1-GE3 replaces Si1034X-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
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Si1034CX
Si1034X
SC89-6
Si1034CX-T1-GE3
Si1034X-T1-GE3
23-Mar-11
SC-89-6
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NTK3134NT1H
Abstract: mosfet marking kf
Text: NTK3134N Power MOSFET 20 V, 890 mA, Single N−Channel with ESD Protection, SOT−723 Features • • • • • http://onsemi.com N−Channel Switch with Low RDS on 44% Smaller Footprint and 38% Thinner than SC89 Low Threshold Levels Allowing 1.5 V RDS(on) Rating
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NTK3134N
OT-723
NTK3134N/D
NTK3134NT1H
mosfet marking kf
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Untitled
Abstract: No abstract text available
Text: AO5803E Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO5803E uses advanced trench technology to provide excellent RDS ON , low gate charge, and operation with gate voltages as low as 1.8V, in the small SC89-6L footprint. It can be used as load
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AO5803E
AO5803E
SC89-6L
SC-89-6
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Untitled
Abstract: No abstract text available
Text: UM5204EEXF Quad Channel Low Capacitance ESD Protection Array UM5204EEAF UM5204EEBF UM5204EECF SC70-6/SC88/SOT363 SC89-6/SOT563/SOT666 TSOP-6/SOT23-6 General Description UM5204EEXF are surge rated diode arrays designed to protect high speed data interfaces. This series has been
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UM5204EEXF
UM5204EEAF
UM5204EEBF
UM5204EECF
SC70-6/SC88/SOT363
SC89-6/SOT563/SOT666
TSOP-6/SOT23-6
UM5204EEXF
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Untitled
Abstract: No abstract text available
Text: UESD55B Quad Line ESD Protection Diode Array UESD55B SC89-6 / SOT563 / SOT666 General Description The UESD55B of TVS diode array is designed to protect sensitive electronics from damage or latch-up due to ESD, for use in applications where board space is at a premium. It is unidirectional
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UESD55B
UESD55B
SC89-6
OT563
OT666
UESD55
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Untitled
Abstract: No abstract text available
Text: UESD6V8L4A/B Low Capacitance Quad Line ESD Protection Diode Array UESD6V8L4A SC70-5/SC88A/SOT353 UESD6V8L4B SC89-5/SOT553/SOT665 General Description The UESD6V8L4A/B of TVS diode array is designed to protect sensitive electronics from damage or latch-up due to ESD, for use in applications where board space is at a premium. It is unidirectional device and may be
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SC70-5/SC88A/SOT353
SC89-5/SOT553/SOT665
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SC89-6L
Abstract: marking 6l marking BO sc89 SOT-666 transistor marking ac AC marking
Text: Device Orientation Vishay Siliconix Device Orientation SC89-6L SOT-666 DEVICE ORIENTATION AC * Package Method SC89-6L (SOT-666) T1 AC AC AC AC AC AC A User Direction of Feed * There is no Pin 1 mark on the units. Pin 1 is located in the lower left corner with respect to the marking orientation as shown.
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SC89-6L
OT-666)
Specification--PACK-0007-10
T-05206,
SC89-6L
marking 6l
marking BO
sc89
SOT-666
transistor marking ac
AC marking
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40728
Abstract: Siliconix SC89 SC89-3L
Text: Tape Information Vishay Siliconix Ĭ1.50"0.10 4.00"0.10 2.00"0.05 3.50 " 0.05 8.00 +0.20/−0.10 1.75 " 0.10 SC89_3L 4.00"0.10 Ĭ0.40"0.10 NOTES: 1. Mat’l: P.C Conductive 2. Surface Resistivity: Max 105 Ω/Sq 3. Color: Black QUANTITY PER REEL 3,000 ECN: S-40728−Rev. F, 17-May-04
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S-40728-Rev.
17-May-04
13-May-04
40728
Siliconix
SC89
SC89-3L
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Untitled
Abstract: No abstract text available
Text: Specification Comparison www.vishay.com Vishay Siliconix Si1013CX vs. Si1013X Description: Package: Pin Out: P-Channel, 20 V D-S MOSFET SC89-3 Identical Part Number Replacements: Si1013CX-T1-GE3 replaces Si1013X-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
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Si1013CX
Si1013X
SC89-3
Si1013CX-T1-GE3
Si1013X-T1-GE3
11-Jun-13
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SC89-6/SOT563/SOT666
Abstract: No abstract text available
Text: UESD6V8L5B Low Capacitance 5 Line ESD Protection Diode Array UESD6V8L5B SC89-6 / SOT563 / SOT666 General Description The UESD6V8L5B of TVS array is designed to protect sensitive electronics from damage or latch-up due to ESD, for use in applications where board space is at a premium, It is unidirectional device and
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SC89-6
OT563
OT666
SC89-6/SOT563/SOT666
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Untitled
Abstract: No abstract text available
Text: UESD56B 5 Line ESD Protection Diode Array UESD56B SC89-6 / SOT563 / SOT666 General Description The UESD56B of TVS diode array is designed to protect sensitive electronics from damage or latch-up due to ESD, for use in applications where board space is at a premium. It is unidirectional
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UESD56B
UESD56B
SC89-6
OT563
OT666
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode Common Anode L1SS360TT1G Features • We declare that the material of product compliance with RoHS requirements. 3 ORDERING INFORMATION Device PACKAGE Shipping 2 L1SS360TT1G SC89 3000 Tape & Reel L1SS360TT1G SC89
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L1SS360TT1G
L1SS360TT1G
SC-89
463C-01
463C-02.
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Untitled
Abstract: No abstract text available
Text: Tape Information www.vishay.com Vishay Siliconix Carrier Tape SC89-3L Version A0 B0 K0 A1 B1 - 2 SIM only 1.85 ± 0.05 1.85 ± 0.05 0.88 ± 0.05 0.54 ± 0.05 1.4 + 0.1 Notes (1) 10 sprocket hole pitch cumulative tolerance ± 0.2 mm. (2) Camber not to exceed 1 mm in 100 mm, also cannot to exceed to 1 cm in 1 m actually.
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SC89-3L
C15-0527-Rev.
25-May-15
93-5217-X
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Untitled
Abstract: No abstract text available
Text: AO5803 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO5803 uses advanced trench technology to provide excellent RDS ON , low gate charge, and operation with gate voltages as low as 1.8V, in the small SC89-6L footprint. It can be used as load
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AO5803
SC89-6L
SC-89-6
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Untitled
Abstract: No abstract text available
Text: AO5800 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO5800 uses advanced trench technology to provide excellent RDS ON , low gate charge, and operation with gate voltages as low as 4.5V, in the small SC89-6L footprint. It can be used for a wide
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AO5800
AO5800
SC89-6L
SC-89-6
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SC-89
Abstract: SC89
Text: ALPHA & OMEGA SEMICONDUCTOR SC89 6L Tape and Reel Data SC89 6L Carrier Tape ir 'I KO — UNIT. MM PACKAGE AO BO KO DO D1 E El ES PO PI P2 T S C 8 9 .6 L <8 nn> 1.78 ±0.05 1.78 ±0.05 0.89 ±0.05 0.50 ±0.05 1.50 ±0.10 8.00 1.75 ±0.10 3.50 ±0.05 4.00 ±0.10
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3000pcs
TAPE-------75
A058xx)
SC-89
SC89
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