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    TOFC

    Abstract: 4216165L
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD42S16165L, 4216165L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The µ PD42S16165L, 4216165L are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional hyper


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    PDF PD42S16165L, 4216165L 16-BIT, 4216165L PD42S16165L 50-pin 42-pin TOFC

    UPD4216165LG5-A60-7JF

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD42S16165L, 4216165L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE, Description The µPD42S16165L, 4216165L are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.


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    PDF PD42S16165L, 4216165L 16-BIT, 4216165L PD42S16165L 50-pin 42-pin UPD4216165LG5-A60-7JF

    Untitled

    Abstract: No abstract text available
    Text: HOW TO USE DRAM 1994, 1992 1995, 1996 Document No. M10339EJ3V0UM00 3rd edition Date Published July 1996 P Printed in Japan NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and


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    PDF M10339EJ3V0UM00

    VR4100

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD30101 VR4101 64-BIT MICROPROCESSOR DESCRIPTION The µPD30101 VR4101 is one of NEC’s VR series RISC (Reduced Instruction Set Computer) microprocessors and is a high-performance 64-bit microprocessor employing the MIPS RISC architecture.


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    PDF PD30101 VR4101TM 64-BIT VR4101) VR4101 VR4100TM VR4100

    VR4100

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD30101 VR4101 64-BIT MICR OPROCESSOR DESCRIPTION The µPD30101 VR4101 is one of NEC’s VR series RISC (Reduced Instruction Set Computer) microprocessors and is a high-performance 64-bit microprocessor employing the MIPS RISC architecture.


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    PDF PD30101 VR4101TM 64-BIT VR4101) VR4101 VR4100TM VR4100

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD42S16165, 4216165 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description The µPD42S16165, 4216165 are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.


    Original
    PDF PD42S16165, 16-BIT, PD42S16165 50-pin 42-pin 10bots

    Untitled

    Abstract: No abstract text available
    Text: MOS INTEGRATED CIRCUIT ¿¿PD4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE D escription The ì ì PD42S16165L, 4216165Lare 1 048 576 w ords by 16 bits dynamic CMOS RAMs w ith optional hyper page


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    PDF 16-BIT, PD42S16165L, 4216165Lare uPD42S16165L 4216165L 50-pin 42-pin 6165L-A L427525

    K777

    Abstract: No abstract text available
    Text: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT ¿ P D 4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The //PD42S16165L, 4216165L are 1 048 576 w o rd s by 16 b its d y n a m ic CMOS R A M s w ith o p tio n a l h yp e r page


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    PDF 16-BIT, uPD42S16165L uPD4216165L /JPD42S16165L, 4216165L 42-pin //PD42S16165L-A60, 4216165L-A60 PD42S16165L-A70, 4216165L-A70 K777

    GPI048

    Abstract: upd3 PD30111
    Text: ¿¿PD30111 NEC 23. ELECTRICAL SPECIFICATIONS This section shows the electrical specifications of versions 1.1 and 2.0 of the V r41 11. The revision is identified by the marking in the top of the package. 23.1 Version 1.1 Absolute Maximum Ratings T a = 25°C


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    PDF uPD30111 ns/20 GPI048 upd3 PD30111

    nec A2C

    Abstract: No abstract text available
    Text: MOS INTEGRATED CIRCUIT ju P D 4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The|PD42S16165L, 4216165Lare 1 048 576 w ords by 16 bits dynamic CMOS RAMs w ith optional hyper page


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    PDF 16-BIT, uPD42S16165L uPD4216165L /JPD42S16165L, 4216165L 50-pin 42-pin pPD42S16165L-A60, 4216165L-A60 /iPD42Sl6165L-A70, nec A2C

    PJ 1169

    Abstract: No abstract text available
    Text: USER’S MANUAL O f C Corporation 1 9 9 4 ,1 9 9 5 .1 9 9 6 NEC Document No. M10339EJ3V0UM00 3rd edition Date Published July 1996 P Printed in Japan Rambus Is a trademark of Rambus Inc. The Information In this document is subject to change without notice.


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    PDF M10339EJ3V0UM00 PJ 1169

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT jU P D 4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16M -B IT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE, Description The /PD42S16165L, 4216165L are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional EDO.


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    PDF 16-BIT, uPD42S16165L uPD4216165L PD42S16165L iPD42S16165L, 4216165L 50-pin 42-pin IR35-207-3 VP15-207-3

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT U P D 3 0 1 0 1 V r4101 64-BIT MICR OPROCESSOR DESCRIPTION The ¿¡PD30101 Vr4101 is one of NEC’s V r series RISC (Reduced Instruction Set Computer) microprocessors and is a high-performance 64-bit microprocessor employing the MIPS RISC architecture.


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    PDF r4101â 64-BIT PD30101 Vr4101) r4101 r4100â

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT / iP D 4 2 S 1 6 16 5 , 4 2 16 16 5 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description The ¿¡PD42S16165, 4216165 are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.


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    PDF 16-BIT, uPD42S16165 uPD4216165 PD42S16165 PD42S16165, 50-pin 42-pin uPD42S16165-50 uPD42S16165-60 uPD42S16165-70

    D42S16165

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT PD42S16165L, 4216165L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE, Description The /PD42S16165L, 4216165L are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.


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    PDF uPD42S16165L uPD4216165L 16-BIT, /xPD42S16165L, 4216165L /xPD42S16165L PD42S16165L, 50-pin 42-pin D42S16165

    65G5

    Abstract: NEC 4216165-60
    Text: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD42S 16165, 4216165 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description The /¿PD42S16165, 4216165 are 1,048,576 w ords by 16 bits CM OS dynam ic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.


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    PDF uPD42S16165 uPD4216165 16-BIT, PD42S16165, PD42S16165 50-pin 42-pin uPD42Sl6l65-50 iuPD42S16165-60 65G5 NEC 4216165-60

    42S16165

    Abstract: ahW MARKING
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿ P D 4 2 S 1 6 1 6 5 , 4 2 1 6 1 6 5 1 6 M -B IT DYNAMIC RAM 1 M-WORO BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE Description The /iPD42S16165,4216165 are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional hyper page mode


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    PDF 16-BIT, uPD42S16165 uPD4216165 jjPD42S16165 iPD42S16165, 50-pin 42-pin iPD42S16165-50 MPD42S16166-60, PD42S16t65-70 42S16165 ahW MARKING

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ju P D 4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE Description T h e /iP D 4 2 S 1 6 1 65L, 4 2 1 6165L a re 1 ,0 4 8 ,5 7 6 w o rd s b y 16 b its C M O S d y n a m ic R A M s w ith o p tio n a l h y p e r page


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    PDF 16-BIT, 6165L 42S16165L 42S16165L, VP15-107-2 IR35-107-2 /iPD42S16165LLE, 4216165LLE: 42-pin

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ¿¿PD42S 16165L , 4 2 16 16 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE D e s c rip tio n The /iP D 42S 16165L, 4216165L are 1,048,576 words by 16 bits CMOS dynam ic RAMs with optional hyper page


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    PDF uPD42S16165L uPD4216165L 16-BIT, 16165L, 4216165L 42S16165L PD42S16165L, 50-pin 42-pin

    TELCON 25A

    Abstract: PMU 02B
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT ¿¿P D 30102 V r4102 64-/32-BIT MICROPROCESSOR DESCRIPTION The ¿¡PD30102 Vr4102 is one of NEC’s V r series RISC (Reduced Instruction Set Computer) microprocessors and is a high-performance 64-/32-bit microprocessor employing the MIPS RISC architecture.


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    PDF r4102â 64-/32-BIT PD30102 Vr4102) r4102 r4100â TELCON 25A PMU 02B

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ju PD 4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORO BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE D escription The /PD42S16165L, 4216165L are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional hyper page


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    PDF 16-BIT, uPD42S16165L uPD4216165L jjPD42S16165L iPD42S16165L, 4216165L 50-pin 42-pin JPD42S16165L-A60, 4216165L-A60

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT /¿PD42S16165L, 4216165L 3.3 V OPERATION 16M -B IT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE, Description The ¿¡PD42S16165L, 4216165L are 1,048,576 w ords by 16 bits CMOS dynam ic RAMs with optional EDO.


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    PDF PD42S16165L, 4216165L 16-BIT, 4216165L PD42S16165L 50-pin 42-pin

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD42S16165L, 4216165L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WOFD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The PD42S16165L, 42 16165Lare 1 048 576 w o rd s by 16 b its d yn a m ic C MOS R A M s w ith o p tio n a l h yp e r page


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    PDF PD42S16165L, 4216165L 16-BIT, nPD42S16165L, 16165Lare juPD42S16165L 4216165L k42752S aDS74% 16165L,

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT ju P D 4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE, D escription The ¿¿PD42S16165L, 4216165L are 1,048,576 words by 16 bits C M O S dynam ic RA M s with optional EDO.


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    PDF 16M-BIT 16-BIT, uPD42S16165L uPD4216165L iPD42S16165L iPD42S16165L, 50-pin 42-pin IR35-207-3 P15-207-3