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    UPD42S16165 Search Results

    UPD42S16165 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Type PDF
    uPD42S16165LG5-A50-7JF NEC 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-Word BY 16-BIT, EDO, BYTE READ/WRITE MODE Original PDF
    UPD42S16165LG5-A60 NEC DRAM Original PDF
    uPD42S16165LG5-A60-7JF NEC 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-Word BY 16-BIT, EDO, BYTE READ/WRITE MODE Original PDF
    UPD42S16165LG5-A70 NEC DRAM Original PDF
    uPD42S16165LG5-A70-7JF NEC 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-Word BY 16-BIT, EDO, BYTE READ/WRITE MODE Original PDF
    uPD42S16165LLE-A50 NEC 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-Word BY 16-BIT, EDO, BYTE READ/WRITE MODE Original PDF
    uPD42S16165LLE-A60 NEC 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-Word BY 16-BIT, EDO, BYTE READ/WRITE MODE Original PDF
    uPD42S16165LLE-A70 NEC 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-Word BY 16-BIT, EDO, BYTE READ/WRITE MODE Original PDF

    UPD42S16165 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IBM025161LG5D60

    Abstract: gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT
    Text: Fujitsu Microelectronics Inc. Hitachi America Ltd. Hyundai Electronics America Inc. IBM Microelectronics LG Semicon America Inc. formerly Goldstar Mitsubishi Electronics America Inc. NEC Electronics Inc. Micron Technology Inc. Mosel Vitelic Inc. MoSys Inc.


    Original
    PDF MB81141621 MB81141622 MB81G8322 MB81116421 TC59R1608 2ns500MHz TC59R0808 IBM025161LG5D60 gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT

    D42S16165

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT UPD42S16165L, 4216165L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE, Description The /xPD42S16165L, 4216165L are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.


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    PDF uPD42S16165L uPD4216165L 16-BIT, /xPD42S16165L, 4216165L /xPD42S16165L PD42S16165L, 50-pin 42-pin D42S16165

    Untitled

    Abstract: No abstract text available
    Text: MOS INTEGRATED CIRCUIT ¿¿PD4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE D escription The ì ì PD42S16165L, 4216165Lare 1 048 576 w ords by 16 bits dynamic CMOS RAMs w ith optional hyper page


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    PDF 16-BIT, PD42S16165L, 4216165Lare uPD42S16165L 4216165L 50-pin 42-pin 6165L-A L427525

    nec A2C

    Abstract: No abstract text available
    Text: MOS INTEGRATED CIRCUIT ju P D 4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The|iPD42S16165L, 4216165Lare 1 048 576 w ords by 16 bits dynamic CMOS RAMs w ith optional hyper page


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    PDF 16-BIT, uPD42S16165L uPD4216165L /JPD42S16165L, 4216165L 50-pin 42-pin pPD42S16165L-A60, 4216165L-A60 /iPD42Sl6165L-A70, nec A2C

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT jU P D 4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16M -B IT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE, Description The /JPD42S16165L, 4216165L are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional EDO.


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    PDF 16-BIT, uPD42S16165L uPD4216165L PD42S16165L iPD42S16165L, 4216165L 50-pin 42-pin IR35-207-3 VP15-207-3

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT / iP D 4 2 S 1 6 16 5 , 4 2 16 16 5 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description The ¿¡PD42S16165, 4216165 are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.


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    PDF 16-BIT, uPD42S16165 uPD4216165 PD42S16165 PD42S16165, 50-pin 42-pin uPD42S16165-50 uPD42S16165-60 uPD42S16165-70

    707j

    Abstract: XC002 D42S161
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ju P D 42S 16 16 5 , 4 2 16 16 5 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description T h e /¿PD 42S16165, 421 6 1 6 5 a re 1,048,576 w o rd s b y 16 b its C M O S dy n a m ic R A M s w ith o p tio nal ED O .


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    PDF 16-BIT, 42S16165, 50-pin 42-pin IR35-207-3 VP15-207-3 707j XC002 D42S161

    65G5

    Abstract: NEC 4216165-60
    Text: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD42S 16165, 4216165 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description The /¿PD42S16165, 4216165 are 1,048,576 w ords by 16 bits CM OS dynam ic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.


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    PDF uPD42S16165 uPD4216165 16-BIT, PD42S16165, PD42S16165 50-pin 42-pin uPD42Sl6l65-50 iuPD42S16165-60 65G5 NEC 4216165-60

    42S16165

    Abstract: ahW MARKING
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿ P D 4 2 S 1 6 1 6 5 , 4 2 1 6 1 6 5 1 6 M -B IT DYNAMIC RAM 1 M-WORO BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE Description The /iPD42S16165,4216165 are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional hyper page mode


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    PDF 16-BIT, uPD42S16165 uPD4216165 jjPD42S16165 iPD42S16165, 50-pin 42-pin iPD42S16165-50 MPD42S16166-60, PD42S16t65-70 42S16165 ahW MARKING

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ju P D 4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE Description T h e /iP D 4 2 S 1 6 1 65L, 4 2 1 6165L a re 1 ,0 4 8 ,5 7 6 w o rd s b y 16 b its C M O S d y n a m ic R A M s w ith o p tio n a l h y p e r page


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    PDF 16-BIT, 6165L 42S16165L 42S16165L, VP15-107-2 IR35-107-2 /iPD42S16165LLE, 4216165LLE: 42-pin

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ¿¿PD42S 16165L , 4 2 16 16 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE D e s c rip tio n The /iP D 42S 16165L, 4216165L are 1,048,576 words by 16 bits CMOS dynam ic RAMs with optional hyper page


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    PDF uPD42S16165L uPD4216165L 16-BIT, 16165L, 4216165L 42S16165L PD42S16165L, 50-pin 42-pin

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT /¿PD42S16165L, 4216165L 3.3 V OPERATION 16M -B IT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE, Description The ¿¡PD42S16165L, 4216165L are 1,048,576 w ords by 16 bits CMOS dynam ic RAMs with optional EDO.


    OCR Scan
    PDF PD42S16165L, 4216165L 16-BIT, 4216165L PD42S16165L 50-pin 42-pin

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD42S16165L, 4216165L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WOFD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The nPD42S16165L, 42 16165Lare 1 048 576 w o rd s by 16 b its d yn a m ic C MOS R A M s w ith o p tio n a l h yp e r page


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    PDF PD42S16165L, 4216165L 16-BIT, nPD42S16165L, 16165Lare juPD42S16165L 4216165L k42752S aDS74% 16165L,

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT ju P D 4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE, D escription The ¿¿PD42S16165L, 4216165L are 1,048,576 words by 16 bits C M O S dynam ic RA M s with optional EDO.


    OCR Scan
    PDF 16M-BIT 16-BIT, uPD42S16165L uPD4216165L iPD42S16165L iPD42S16165L, 50-pin 42-pin IR35-207-3 P15-207-3