UPD4216165LG5-A60-7JF
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD42S16165L, 4216165L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE, Description The µPD42S16165L, 4216165L are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.
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Original
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PDF
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PD42S16165L,
4216165L
16-BIT,
4216165L
PD42S16165L
50-pin
42-pin
UPD4216165LG5-A60-7JF
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TOFC
Abstract: 4216165L
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD42S16165L, 4216165L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The µ PD42S16165L, 4216165L are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional hyper
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Original
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PDF
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PD42S16165L,
4216165L
16-BIT,
4216165L
PD42S16165L
50-pin
42-pin
TOFC
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Untitled
Abstract: No abstract text available
Text: HOW TO USE DRAM 1994, 1992 1995, 1996 Document No. M10339EJ3V0UM00 3rd edition Date Published July 1996 P Printed in Japan NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and
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Original
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PDF
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M10339EJ3V0UM00
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GE4F
Abstract: UPD65013 74022a SMD BGA 672 DRAWING ULF-210R TRANSISTOR SMD MARKING CODE 352 UPD7514 UPC451G2 smd TRANSISTOR code YW UPD74HC00
Text: Information SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL Document No. C10535EJ9V0IF00 9th edition Date Published December 1997 N Printed in Japan 1989 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written
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Original
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PDF
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C10535EJ9V0IF00
GE4F
UPD65013
74022a
SMD BGA 672 DRAWING
ULF-210R
TRANSISTOR SMD MARKING CODE 352
UPD7514
UPC451G2
smd TRANSISTOR code YW
UPD74HC00
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Untitled
Abstract: No abstract text available
Text: Information 16M DRAM DATA COLLECTION 1M-word by 16-bit, Revision P Document No. M12824XJ1V0IF00 1st edition Date Published September 1997 N 1997 Printed in Japan [MEMO] 2 SUMMARY OF CONTENTS CHAPTER 1 DRAM PROCESS .
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Original
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PDF
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16-bit,
M12824XJ1V0IF00
PPD42S16165L,
4216165L.
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M9627
Abstract: uPC451g SMD 6PIN IC MARKING CODE PR-53365 NIHON SMD MARKING codes sealed relay ge mil 7451 UPD65013 smd code marking NEC g GE4F tanaka AL wire
Text: SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL 1989 Document No. C10535EJ8V0IF00 8th edition Date Published February 1997 N Printed in Japan No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
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Original
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PDF
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C10535EJ8V0IF00
M9627
uPC451g
SMD 6PIN IC MARKING CODE
PR-53365
NIHON SMD MARKING codes
sealed relay ge mil 7451
UPD65013
smd code marking NEC g
GE4F
tanaka AL wire
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Untitled
Abstract: No abstract text available
Text: MOS INTEGRATED CIRCUIT ¿¿PD4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE D escription The ì ì PD42S16165L, 4216165Lare 1 048 576 w ords by 16 bits dynamic CMOS RAMs w ith optional hyper page
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OCR Scan
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PDF
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16-BIT,
PD42S16165L,
4216165Lare
uPD42S16165L
4216165L
50-pin
42-pin
6165L-A
L427525
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nec A2C
Abstract: No abstract text available
Text: MOS INTEGRATED CIRCUIT ju P D 4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The|iPD42S16165L, 4216165Lare 1 048 576 w ords by 16 bits dynamic CMOS RAMs w ith optional hyper page
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OCR Scan
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PDF
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16-BIT,
uPD42S16165L
uPD4216165L
/JPD42S16165L,
4216165L
50-pin
42-pin
pPD42S16165L-A60,
4216165L-A60
/iPD42Sl6165L-A70,
nec A2C
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT jU P D 4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16M -B IT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE, Description The /JPD42S16165L, 4216165L are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional EDO.
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OCR Scan
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PDF
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16-BIT,
uPD42S16165L
uPD4216165L
PD42S16165L
iPD42S16165L,
4216165L
50-pin
42-pin
IR35-207-3
VP15-207-3
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D42S16165
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT UPD42S16165L, 4216165L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE, Description The /xPD42S16165L, 4216165L are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.
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OCR Scan
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PDF
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uPD42S16165L
uPD4216165L
16-BIT,
/xPD42S16165L,
4216165L
/xPD42S16165L
PD42S16165L,
50-pin
42-pin
D42S16165
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ¿¿PD42S 16165L , 4 2 16 16 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE D e s c rip tio n The /iP D 42S 16165L, 4216165L are 1,048,576 words by 16 bits CMOS dynam ic RAMs with optional hyper page
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OCR Scan
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PDF
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uPD42S16165L
uPD4216165L
16-BIT,
16165L,
4216165L
42S16165L
PD42S16165L,
50-pin
42-pin
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ju PD 4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORO BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE D escription The /iPD42S16165L, 4216165L are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional hyper page
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OCR Scan
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PDF
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16-BIT,
uPD42S16165L
uPD4216165L
jjPD42S16165L
iPD42S16165L,
4216165L
50-pin
42-pin
JPD42S16165L-A60,
4216165L-A60
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K777
Abstract: No abstract text available
Text: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT ¿ P D 4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The //PD42S16165L, 4216165L are 1 048 576 w o rd s by 16 b its d y n a m ic CMOS R A M s w ith o p tio n a l h yp e r page
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OCR Scan
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PDF
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16-BIT,
uPD42S16165L
uPD4216165L
/JPD42S16165L,
4216165L
42-pin
//PD42S16165L-A60,
4216165L-A60
PD42S16165L-A70,
4216165L-A70
K777
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT /¿PD42S16165L, 4216165L 3.3 V OPERATION 16M -B IT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE, Description The ¿¡PD42S16165L, 4216165L are 1,048,576 w ords by 16 bits CMOS dynam ic RAMs with optional EDO.
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OCR Scan
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PDF
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PD42S16165L,
4216165L
16-BIT,
4216165L
PD42S16165L
50-pin
42-pin
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT ju P D 4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE, D escription The ¿¿PD42S16165L, 4216165L are 1,048,576 words by 16 bits C M O S dynam ic RA M s with optional EDO.
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OCR Scan
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PDF
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16M-BIT
16-BIT,
uPD42S16165L
uPD4216165L
iPD42S16165L
iPD42S16165L,
50-pin
42-pin
IR35-207-3
P15-207-3
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PJ 1169
Abstract: No abstract text available
Text: USER’S MANUAL O f C Corporation 1 9 9 4 ,1 9 9 5 .1 9 9 6 NEC Document No. M10339EJ3V0UM00 3rd edition Date Published July 1996 P Printed in Japan Rambus Is a trademark of Rambus Inc. The Information In this document is subject to change without notice.
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OCR Scan
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PDF
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M10339EJ3V0UM00
PJ 1169
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT NEC mP D 4264165, 4265165 64 M BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The pPD4264165,4265165 are 4,194,304 words by 16 bits CMOS dynamic RAMs with optional hyper page mode.
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OCR Scan
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PDF
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16-BIT,
uPD4264165
uPD4265165
iPD4264165,
50-pin
HPD4264165-A60,
4266165-A50
426E16S-A60
HPD426416S-A70,
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT / iP D 4 2 S 1 6 16 5 , 4 2 16 16 5 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description The ¿¡PD42S16165, 4216165 are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.
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OCR Scan
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PDF
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16-BIT,
uPD42S16165
uPD4216165
PD42S16165
PD42S16165,
50-pin
42-pin
uPD42S16165-50
uPD42S16165-60
uPD42S16165-70
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707j
Abstract: XC002 D42S161
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ju P D 42S 16 16 5 , 4 2 16 16 5 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description T h e /¿PD 42S16165, 421 6 1 6 5 a re 1,048,576 w o rd s b y 16 b its C M O S dy n a m ic R A M s w ith o p tio nal ED O .
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OCR Scan
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PDF
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16-BIT,
42S16165,
50-pin
42-pin
IR35-207-3
VP15-207-3
707j
XC002
D42S161
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4265165G5
Abstract: Oil 00037
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT IMEC juPD4264165,4265165 64 M BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The pPD4264165,4265165 are 4,194,304 words by 16 bits CMOS dynamic RAMs with optional hyper page mode.
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OCR Scan
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PDF
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16-BIT,
uPD4264165
uPD4265165
iPD4264165,
50-pin
IPD4264165-A50,
4265165-AS0
HPD4264165-A60,
426S165-A60
HPD4264165-A70,
4265165G5
Oil 00037
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65G5
Abstract: NEC 4216165-60
Text: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD42S 16165, 4216165 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description The /¿PD42S16165, 4216165 are 1,048,576 w ords by 16 bits CM OS dynam ic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.
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OCR Scan
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PDF
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uPD42S16165
uPD4216165
16-BIT,
PD42S16165,
PD42S16165
50-pin
42-pin
uPD42Sl6l65-50
iuPD42S16165-60
65G5
NEC 4216165-60
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Untitled
Abstract: No abstract text available
Text: NEC USER'S MANUAL HOW TO USE DRAM Document No. M10339EJ3V0UMQ0 {3rd édition Date Published July 1996 P NEC Corporation 1994, 1995, 1996 Printed in Japan 1103 R a m b u s is a trad em ark o f R a m b us Inc. T h e in fo rm a tio n in th is d o c u m e n t is s u b je c t to c h a n g e w ith o u t n otice.
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OCR Scan
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PDF
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M10339EJ3V0UMQ0
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42S16165
Abstract: ahW MARKING
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿ P D 4 2 S 1 6 1 6 5 , 4 2 1 6 1 6 5 1 6 M -B IT DYNAMIC RAM 1 M-WORO BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE Description The /iPD42S16165,4216165 are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional hyper page mode
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OCR Scan
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PDF
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16-BIT,
uPD42S16165
uPD4216165
jjPD42S16165
iPD42S16165,
50-pin
42-pin
iPD42S16165-50
MPD42S16166-60,
PD42S16t65-70
42S16165
ahW MARKING
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ju P D 4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE Description T h e /iP D 4 2 S 1 6 1 65L, 4 2 1 6165L a re 1 ,0 4 8 ,5 7 6 w o rd s b y 16 b its C M O S d y n a m ic R A M s w ith o p tio n a l h y p e r page
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OCR Scan
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PDF
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16-BIT,
6165L
42S16165L
42S16165L,
VP15-107-2
IR35-107-2
/iPD42S16165LLE,
4216165LLE:
42-pin
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