TOFC
Abstract: 4216165L
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD42S16165L, 4216165L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The µ PD42S16165L, 4216165L are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional hyper
|
Original
|
PDF
|
PD42S16165L,
4216165L
16-BIT,
4216165L
PD42S16165L
50-pin
42-pin
TOFC
|
UPD4216165LG5-A60-7JF
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD42S16165L, 4216165L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE, Description The µPD42S16165L, 4216165L are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.
|
Original
|
PDF
|
PD42S16165L,
4216165L
16-BIT,
4216165L
PD42S16165L
50-pin
42-pin
UPD4216165LG5-A60-7JF
|
Untitled
Abstract: No abstract text available
Text: HOW TO USE DRAM 1994, 1992 1995, 1996 Document No. M10339EJ3V0UM00 3rd edition Date Published July 1996 P Printed in Japan NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and
|
Original
|
PDF
|
M10339EJ3V0UM00
|
VR4100
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD30101 VR4101 64-BIT MICROPROCESSOR DESCRIPTION The µPD30101 VR4101 is one of NEC’s VR series RISC (Reduced Instruction Set Computer) microprocessors and is a high-performance 64-bit microprocessor employing the MIPS RISC architecture.
|
Original
|
PDF
|
PD30101
VR4101TM
64-BIT
VR4101)
VR4101
VR4100TM
VR4100
|
VR4100
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD30101 VR4101 64-BIT MICR OPROCESSOR DESCRIPTION The µPD30101 VR4101 is one of NEC’s VR series RISC (Reduced Instruction Set Computer) microprocessors and is a high-performance 64-bit microprocessor employing the MIPS RISC architecture.
|
Original
|
PDF
|
PD30101
VR4101TM
64-BIT
VR4101)
VR4101
VR4100TM
VR4100
|
Untitled
Abstract: No abstract text available
Text: MOS INTEGRATED CIRCUIT ¿¿PD4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE D escription The ì ì PD42S16165L, 4216165Lare 1 048 576 w ords by 16 bits dynamic CMOS RAMs w ith optional hyper page
|
OCR Scan
|
PDF
|
16-BIT,
PD42S16165L,
4216165Lare
uPD42S16165L
4216165L
50-pin
42-pin
6165L-A
L427525
|
K777
Abstract: No abstract text available
Text: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT ¿ P D 4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The //PD42S16165L, 4216165L are 1 048 576 w o rd s by 16 b its d y n a m ic CMOS R A M s w ith o p tio n a l h yp e r page
|
OCR Scan
|
PDF
|
16-BIT,
uPD42S16165L
uPD4216165L
/JPD42S16165L,
4216165L
42-pin
//PD42S16165L-A60,
4216165L-A60
PD42S16165L-A70,
4216165L-A70
K777
|
GPI048
Abstract: upd3 PD30111
Text: ¿¿PD30111 NEC 23. ELECTRICAL SPECIFICATIONS This section shows the electrical specifications of versions 1.1 and 2.0 of the V r41 11. The revision is identified by the marking in the top of the package. 23.1 Version 1.1 Absolute Maximum Ratings T a = 25°C
|
OCR Scan
|
PDF
|
uPD30111
ns/20
GPI048
upd3
PD30111
|
nec A2C
Abstract: No abstract text available
Text: MOS INTEGRATED CIRCUIT ju P D 4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The|PD42S16165L, 4216165Lare 1 048 576 w ords by 16 bits dynamic CMOS RAMs w ith optional hyper page
|
OCR Scan
|
PDF
|
16-BIT,
uPD42S16165L
uPD4216165L
/JPD42S16165L,
4216165L
50-pin
42-pin
pPD42S16165L-A60,
4216165L-A60
/iPD42Sl6165L-A70,
nec A2C
|
PJ 1169
Abstract: No abstract text available
Text: USER’S MANUAL O f C Corporation 1 9 9 4 ,1 9 9 5 .1 9 9 6 NEC Document No. M10339EJ3V0UM00 3rd edition Date Published July 1996 P Printed in Japan Rambus Is a trademark of Rambus Inc. The Information In this document is subject to change without notice.
|
OCR Scan
|
PDF
|
M10339EJ3V0UM00
PJ 1169
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT jU P D 4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16M -B IT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE, Description The /PD42S16165L, 4216165L are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional EDO.
|
OCR Scan
|
PDF
|
16-BIT,
uPD42S16165L
uPD4216165L
PD42S16165L
iPD42S16165L,
4216165L
50-pin
42-pin
IR35-207-3
VP15-207-3
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT U P D 3 0 1 0 1 V r4101 64-BIT MICR OPROCESSOR DESCRIPTION The ¿¡PD30101 Vr4101 is one of NEC’s V r series RISC (Reduced Instruction Set Computer) microprocessors and is a high-performance 64-bit microprocessor employing the MIPS RISC architecture.
|
OCR Scan
|
PDF
|
r4101â
64-BIT
PD30101
Vr4101)
r4101
r4100â
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT / iP D 4 2 S 1 6 16 5 , 4 2 16 16 5 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description The ¿¡PD42S16165, 4216165 are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.
|
OCR Scan
|
PDF
|
16-BIT,
uPD42S16165
uPD4216165
PD42S16165
PD42S16165,
50-pin
42-pin
uPD42S16165-50
uPD42S16165-60
uPD42S16165-70
|
707j
Abstract: XC002 D42S161
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ju P D 42S 16 16 5 , 4 2 16 16 5 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description T h e /¿PD 42S16165, 421 6 1 6 5 a re 1,048,576 w o rd s b y 16 b its C M O S dy n a m ic R A M s w ith o p tio nal ED O .
|
OCR Scan
|
PDF
|
16-BIT,
42S16165,
50-pin
42-pin
IR35-207-3
VP15-207-3
707j
XC002
D42S161
|
|
|
4265165G5
Abstract: Oil 00037
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT IMEC juPD4264165,4265165 64 M BIT DYNAMIC RAM 4 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The pPD4264165,4265165 are 4,194,304 words by 16 bits CMOS dynamic RAMs with optional hyper page mode.
|
OCR Scan
|
PDF
|
16-BIT,
uPD4264165
uPD4265165
iPD4264165,
50-pin
IPD4264165-A50,
4265165-AS0
HPD4264165-A60,
426S165-A60
HPD4264165-A70,
4265165G5
Oil 00037
|
D42S16165
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT PD42S16165L, 4216165L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE, Description The /PD42S16165L, 4216165L are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.
|
OCR Scan
|
PDF
|
uPD42S16165L
uPD4216165L
16-BIT,
/xPD42S16165L,
4216165L
/xPD42S16165L
PD42S16165L,
50-pin
42-pin
D42S16165
|
65G5
Abstract: NEC 4216165-60
Text: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD42S 16165, 4216165 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description The /¿PD42S16165, 4216165 are 1,048,576 w ords by 16 bits CM OS dynam ic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.
|
OCR Scan
|
PDF
|
uPD42S16165
uPD4216165
16-BIT,
PD42S16165,
PD42S16165
50-pin
42-pin
uPD42Sl6l65-50
iuPD42S16165-60
65G5
NEC 4216165-60
|
Untitled
Abstract: No abstract text available
Text: NEC USER'S MANUAL HOW TO USE DRAM Document No. M10339EJ3V0UMQ0 {3rd édition Date Published July 1996 P NEC Corporation 1994, 1995, 1996 Printed in Japan 1103 R a m b u s is a trad em ark o f R a m b us Inc. T h e in fo rm a tio n in th is d o c u m e n t is s u b je c t to c h a n g e w ith o u t n otice.
|
OCR Scan
|
PDF
|
M10339EJ3V0UMQ0
|
42S16165
Abstract: ahW MARKING
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿ P D 4 2 S 1 6 1 6 5 , 4 2 1 6 1 6 5 1 6 M -B IT DYNAMIC RAM 1 M-WORO BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE Description The /PD42S16165,4216165 are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional hyper page mode
|
OCR Scan
|
PDF
|
16-BIT,
uPD42S16165
uPD4216165
jjPD42S16165
iPD42S16165,
50-pin
42-pin
iPD42S16165-50
MPD42S16166-60,
PD42S16t65-70
42S16165
ahW MARKING
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ju P D 4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE Description T h e /iP D 4 2 S 1 6 1 65L, 4 2 1 6165L a re 1 ,0 4 8 ,5 7 6 w o rd s b y 16 b its C M O S d y n a m ic R A M s w ith o p tio n a l h y p e r page
|
OCR Scan
|
PDF
|
16-BIT,
6165L
42S16165L
42S16165L,
VP15-107-2
IR35-107-2
/iPD42S16165LLE,
4216165LLE:
42-pin
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ¿¿PD42S 16165L , 4 2 16 16 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE D e s c rip tio n The /iP D 42S 16165L, 4216165L are 1,048,576 words by 16 bits CMOS dynam ic RAMs with optional hyper page
|
OCR Scan
|
PDF
|
uPD42S16165L
uPD4216165L
16-BIT,
16165L,
4216165L
42S16165L
PD42S16165L,
50-pin
42-pin
|
TELCON 25A
Abstract: PMU 02B
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT ¿¿P D 30102 V r4102 64-/32-BIT MICROPROCESSOR DESCRIPTION The ¿¡PD30102 Vr4102 is one of NEC’s V r series RISC (Reduced Instruction Set Computer) microprocessors and is a high-performance 64-/32-bit microprocessor employing the MIPS RISC architecture.
|
OCR Scan
|
PDF
|
r4102â
64-/32-BIT
PD30102
Vr4102)
r4102
r4100â
TELCON 25A
PMU 02B
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ju PD 4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORO BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE D escription The /PD42S16165L, 4216165L are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional hyper page
|
OCR Scan
|
PDF
|
16-BIT,
uPD42S16165L
uPD4216165L
jjPD42S16165L
iPD42S16165L,
4216165L
50-pin
42-pin
JPD42S16165L-A60,
4216165L-A60
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT /¿PD42S16165L, 4216165L 3.3 V OPERATION 16M -B IT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE, Description The ¿¡PD42S16165L, 4216165L are 1,048,576 w ords by 16 bits CMOS dynam ic RAMs with optional EDO.
|
OCR Scan
|
PDF
|
PD42S16165L,
4216165L
16-BIT,
4216165L
PD42S16165L
50-pin
42-pin
|